Silicon Present In Substrate, Plating, Or Implanted Layer Patents (Class 427/527)
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Publication number: 20090000517Abstract: A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5 ?m or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture.Type: ApplicationFiled: June 18, 2008Publication date: January 1, 2009Applicant: Dai Nippon Printing Co., Ltd.Inventor: Yoshihiro Kishimoto
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Patent number: 7465478Abstract: A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.Type: GrantFiled: January 28, 2005Date of Patent: December 16, 2008Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Amir Al-Bayati, Biagio Gallo
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Publication number: 20080305360Abstract: An organic light emitting device includes an organic light emitting diode on a substrate and an encapsulation layer covering the organic light emitting diode. The encapsulation layer includes an organic layer, an inorganic layer on the organic layer, and an intermixing region between the organic layer and the inorganic layer, the organic layer includes an organic material, the inorganic layer includes an inorganic material, and the intermixing region includes the organic material and the inorganic material.Type: ApplicationFiled: June 5, 2008Publication date: December 11, 2008Inventors: Dong-Won Han, Yeon-Gon Mo, Jin-Ho Kwack
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Publication number: 20080299325Abstract: Discloses are processes for preparing conductive glass-ceramics employ segregation or ion exchange.Type: ApplicationFiled: June 1, 2007Publication date: December 4, 2008Inventors: Mark Davis, Paula Vullo
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Publication number: 20080298910Abstract: A droplet-free wear-resistant coating is manufactured by depositing a wear resistant nitride coating containing a nitride layer which contains at least one metal or metal compound of a metal selected from the group consisting of Ti, Cr, Al, Si and combinations thereof, on a surface of a substrate by cathodic-arc evaporation using a Venetian blind filter system in front of an arc cathode; to reduce metal microdroplets and/or metal microparticles in the wear resistant coating compared to an wear resistant coating obtained without a Venetian blind filter system.Type: ApplicationFiled: March 31, 2008Publication date: December 4, 2008Applicant: GUEHRING OHGInventors: Frank Weber, Samuel Harris
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Patent number: 7455890Abstract: A turbine engine rotor component, such as a compressor or turbine disk or seal element, is protected from corrosion by implanting aluminum or chromium ions, or mixtures thereof, on the surface of the component. Additional metal ions, such as rare earth and reactive elements, may also be implanted on the surface of the component. The component may be heated in a nonoxidizing atmosphere at a specified temperature and time to diffuse the ions into the surface. The component is typically then heated or maintained at an elevated temperature in the presence of oxygen to form an oxide coating on the surface of the component.Type: GrantFiled: August 5, 2003Date of Patent: November 25, 2008Assignee: General Electric CompanyInventors: Ramgopal Darolia, Michael James Weimer
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Patent number: 7434475Abstract: A method of forming a strain sensor from a polymeric film includes the steps of selectively irradiating a surface of the polymer with high energy radiation to change the composition of the polymer and increase the electrical conductivity in selected portions of the surface. The radiation can create carbonized particles or metallic particles within the polymer and the changes in interparticle gaps between conducting particles in the polymer will result in strain dependent electrical properties in the treated polymer.Type: GrantFiled: April 12, 2005Date of Patent: October 14, 2008Assignee: Royal Melbourne Institute of TechnologyInventors: David Mainwaring, Pandiyan Murugaraj
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Publication number: 20080204862Abstract: The invention is directed to elements having fluoride coated surfaces having multiple layers of fluoride material coatings for use in laser systems, and in particular in laser systems operating at wavelength <200 nm. In a particular embodiment the invention is directed to highly reflective mirrors for use in wavelengths <200 nm laser systems. The invention describes the mirrors and a method of making them that utilizes a plurality of periods of fluoride coatings, each period comprising one layer a high refractive index fluoride material and one layer low refractive index fluoride material, and additionally at least one layer of an amorphous silica material. The silica material can be inserted between each period, inserted between a stack consisting of a plurality of periods, and, optionally, can also be applied as the final layer of the finished element to protect the element.Type: ApplicationFiled: February 26, 2008Publication date: August 28, 2008Inventors: Jue Wang, Horst Schreiber
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Publication number: 20080187781Abstract: A method for forming a protective bilayer on a substrate that is a magnetic read/write head or a magnetic recording medium. The bilayer is formed as an adhesion enhancing and corrosion resistant underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of silicon oxynitride, having the general formula SiOxNy, where x can be within the range between 0.02 and 2.0 and y is in the range between approximately 0.01 and 1.5. By adjusting the values of x and y the underlayer contributes to such qualities as strong chemical bonding between the substrate and the DLC, wear and corrosion resistance, chemical and mechanical stability and low electrical conductivity. The underlayer may be formed by various methods such as reactive ion sputtering, plasma assisted chemical vapor deposition, reactive pulsed laser deposition, plasma surface treatment and plasma immersion ion implantation.Type: ApplicationFiled: February 5, 2007Publication date: August 7, 2008Inventors: Shide Cheng, Zhu Feng, Ellis T. Cha
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Publication number: 20080176108Abstract: A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitride, having the general formula AlOxNy or MezAlOxNy where Mez symbolizes Tiz, Siz or Crz and where x, y and z can be varied within the formation process. By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the underlayer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.Type: ApplicationFiled: January 18, 2007Publication date: July 24, 2008Inventors: Shide Cheng, Zhu Feng, Ellis T. Cha
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Publication number: 20080169523Abstract: An imaging optical module is designed to be placed in front of an optical image sensor of a semiconductor component. The module includes at least one element which has a refractive index that varies between its optical axis and its periphery, over at least an annular part and/or over its central part. The element may be a tablet in front of the semiconductor sensor or a lens in front of the semiconductor sensor. The direction of variation in refractive index may be oppositely oriented with respect to the table and lens.Type: ApplicationFiled: December 27, 2007Publication date: July 17, 2008Applicant: STMicroelectronics S.A.Inventors: Emmanuelle Vigier-Blanc, Guillaume Cassar
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Patent number: 7374642Abstract: A continuous, uninterrupted two-step treatment process capable of forming nanometer scale physical structures on the surface of articles fabricated from metallic, ceramic, glass, or plastic materials, and then depositing a thin conformal coating on the nanostructured surface such that the physical structures previously produced are neither masked nor are the dimensions of the physical structures substantially altered. In an additional embodiment, a thicker coating can be grown from the thin conformal coating which itself can be nanostructured as it is deposited. In this case adhesion of the thicker coating is not dependent upon the use of conventional surface pretreatments such as machining, chemical etching, or abrasive blasting. Surface texturing may be performed by ion beam sputtering, and ion assisted coating forms the thin conformal coating, and thicker coating if desired. The treatment process is useful for improving the mechanical, catalytic, chemical, or biological activity of the surfaces so treated.Type: GrantFiled: January 26, 2005Date of Patent: May 20, 2008Inventors: Arnold H. Deutchman, Robert J. Partyka, Robert J. Borel
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Publication number: 20080014448Abstract: Certain embodiments of this invention relates to a coated article including a substrate (e.g., glass substrate) which supports a coating thereon, wherein the coating includes at least one layer of or including SbOxNy. This layer is desirable for blocking (reflection and/or absorption) of at least some ultraviolet (UV) radiation. In certain example embodiments of this invention, the layer of SbOxNy may be used as a dielectric layer in a low-E (low-emissivity) coating, and may improve UV-blocking capability of such a low-E coating. Coated articles in certain example embodiments of this invention may be used in the context of windows.Type: ApplicationFiled: July 14, 2006Publication date: January 17, 2008Applicant: Guardian Industries Corp.Inventors: Yiwei Lu, Desaraju V. Varaprasad, John A. Vanderploeg
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Patent number: 7311881Abstract: A chip having a deaerating function and requiring no bonding or welding for forming a channel, and an apparatus and method for the reaction analysis are provided. The chip contains a first substrate, a second substrate having a liquid inlet and a liquid outlet, and an intermediate member having hydro-phobicity and air permeability and forming a channel between the first and second substrates. It is thereby possible to prevent mixing of air bubbles into the channel.Type: GrantFiled: September 1, 2004Date of Patent: December 25, 2007Assignee: Hitachi, Ltd.Inventors: Kei Takenaka, Toru Fujimura, Yasushi Goto
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Patent number: 7229675Abstract: The invention relates to metallurgy and mechanical engineering, in particular to the development of methods for providing metallic pieces with protective coatings with a view to improving the performance characteristics thereof. In accordance with the inventive method, a multilayer coating is formed by combining and simultaneously or consecutively using of various technologies including ion-plasma evaporation diffusive metallization and controlled atmosphere thermal treatment. The obtained coatings possess superior characteristics with respect to overall properties and are used for gas turbine construction, in particular, for manufacturing gas turbine vanes of aircraft engines.Type: GrantFiled: April 10, 2000Date of Patent: June 12, 2007Inventors: Anatoly Nikolaevich Paderov, Jury Genrikhovich Vexler
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Patent number: 7179508Abstract: Conducting polymers having improved optical properties, and a method of manufacturing the conducting polymers, are disclosed. The conducting polymers are prepared by a process wherein organic ions and neutral oligomers are deposited simultaneously on a substrate surface to provide a conducting polymer film.Type: GrantFiled: May 17, 2004Date of Patent: February 20, 2007Assignee: The Board of Trustees of the University of IllinoisInventors: Luke Hanley, Sanja Tepavcevic, Yongsoo Choi
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Patent number: 7141096Abstract: A gas-selective permeable membrane (1) utilisable in a leak detector for a gas, more particularly helium, comprising a sheet-like body (11) on which at least one reduced thickness area (15) is defined by removing a material from the sheet-like body. This at least one reduced thickness area (15) being permeable to at least one gas and formed so as that it is partly surrounded by a thicker and substantially gas-impermeable area (16) ensuring the structural strength of the membrane.Type: GrantFiled: January 20, 2004Date of Patent: November 28, 2006Assignee: Varian S.p.A.Inventors: Roberto Carboneri, Sandro Vittozzi
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Patent number: 7112453Abstract: This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by desorption spectrometry. The methods are useful in biology and medicine, including clinical diagnostics and drug discovery.Type: GrantFiled: August 5, 2002Date of Patent: September 26, 2006Assignee: Ciphergen Biosystems, Inc.Inventors: T. William Hutchens, Tai-Tung Yip
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Patent number: 7097884Abstract: A method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Another method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.Type: GrantFiled: June 26, 2003Date of Patent: August 29, 2006Assignee: International Business Machines CorporationInventors: Alessandro C. Callegari, Praveen Chaudhari, Fuad E. Doany, James P. Doyle, Eileen A. Galligan, James H. Glownia, Gareth G. Hougham, James A. Lacey, Shui-Chih Lien, Minhua Lu, Alan E. Rosenbluth, Kei-Hsiung Yang
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Patent number: 6916541Abstract: The present invention relates to a substrate for attachment of biomolecules. The substrate is coated with a multiamino organosilane. If desired, the substrate can be further modified prior to coating with a multiamino organosilane. Optional surface modifications include coating the substrate with SiO2 or leaching with acid to form a SiO2 rich layer. DNA, nucleic acids, or any bimolecules can be attached to the coated substrates of the invention. Although a variety of substrates are contemplated, the preferred substrate is a low self-fluorescent glass.Type: GrantFiled: September 7, 2001Date of Patent: July 12, 2005Assignee: Penn State Research FoundationInventors: Carlo G. Pantano, Ezz Metwalli, Samuel Conzone, Dan Haines
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Patent number: 6893543Abstract: A method and apparatus for producing an information carrier which has at least two solid material interfaces at which information is, or may be applied and where the information is stored by local modulation of at least one characteristic of the solid material. Reflection of electromagnetic radiation at the interface depends on this characteristic. The method and apparatus applies at least one intermediate layer between the two solid material interfaces. The intermediate layer transmits the radiation and is at least predominantly made of either SixCy or SivNw, or both.Type: GrantFiled: July 28, 1999Date of Patent: May 17, 2005Assignee: Unaxis Balzers AGInventor: Eduard Kügler
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Patent number: 6878415Abstract: A method is provided for forming a thin film layer of a substrate. The method includes the steps of forming a thin surface layer containing a dopant material on the substrate, and short-time thermal processing of the doped surface layer with processing parameters selected to produce a reaction between the surface layer and the dopant material to form a dielectric film, a metal film or a silicide film. In one embodiment, short-time thermal processing is implemented by flash rapid thermal processing of the doped surface layer. In another embodiment, short-time thermal processing is implemented by sub-melt laser processing of the doped surface layer. The process may be used for forming dielectric layers having a thickness of 50 angstroms or less.Type: GrantFiled: April 15, 2002Date of Patent: April 12, 2005Assignee: Varian Semiconductor Equipment Associates, Inc.Inventor: Daniel F. Downey
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Publication number: 20040247796Abstract: Conducting polymers having improved optical properties, and a method of manufacturing the conducting polymers, are disclosed. The conducting polymers are prepared by a process wherein organic ions and neutral oligomers are deposited simultaneously on a substrate surface to provide a conducting polymer film.Type: ApplicationFiled: May 17, 2004Publication date: December 9, 2004Inventors: Luke Hanley, Sanja Tepavcevic, Yongsoo Choi
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Patent number: 6808606Abstract: This invention relates to a method of making a window (e.g., vehicle windshield, architectural window, etc.), and the resulting window product. At least one glass substrate of the window is ion beam treated and/or milled prior to application of a coating (e.g., sputter coated coating) over the treated/milled substrate surface and/or prior to heat treatment. As a result, defects in the resulting window and/or haze may be reduced. The ion beam used in certain embodiments may be diffused. In certain embodiments, the ion beam treating and/or milling is carried out using a fluorine (F) inclusive gas(es) and/or argon/oxygen gas(es) at the ion source(s). In certain optional embodiments, F may be subimplanted into to treated/milled glass surface for the purpose of reducing Na migration to the glass surface during heat treatment or thereafter, thereby enabling corrosion and/or stains to be reduced for long periods of time.Type: GrantFiled: September 10, 2002Date of Patent: October 26, 2004Assignee: Guardian Industries Corp.Inventors: Scott V. Thomsen, Rudolph Hugo Petrmichl, Vijayen S. Veerasamy, Anthony V. Longobardo, Henry A. Luten, David R. Hall, Jr.
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Patent number: 6797339Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.Type: GrantFiled: January 27, 2003Date of Patent: September 28, 2004Assignees: Research Development Corporation of Japan, Sanyo Electric Co., Ltd.Inventors: Makoto Akizuki, Mitsuaki Harada, Atsumasa Doi, Isao Yamada
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Patent number: 6743369Abstract: A method of manufacturing an electrode for a secondary battery by depositing a thin film composed of active material on a current collector in which a surface-treated layer such as an antirust-treated layer is formed, including the steps of: removing at least part of the surface-treated layer by etching the surface of the current collector with an ion beam or plasma in order to improve the diffusion of the current collector material into the active material thin film; and depositing the thin film on the surface of the current collector subjected to the etching step.Type: GrantFiled: December 17, 2001Date of Patent: June 1, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Daizo Jito, Hisaki Tarui
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Patent number: 6736982Abstract: A micromachined vertical vibrating gyroscope consists of three single crystal silicon assemblies: an outer single crystal silicon assembly, an intermediate single crystal silicon assembly, and an inner single crystal silicon assembly. The outer assembly includes a plurality of arc-shaped anchors arranged in a circle and extending from a single crystal silicon substrate coated with an insulating annulus thereon. The intermediate assembly is a suspended wheel concentric with the arc-shaped anchors. The inner assembly is a suspended hub concentric with the circle formed by the anchors and having no axle at its center. The three assemblies are connected to each other through several flexures. The intermediate suspended wheel is driven into rotational vibration by lateral comb capacitors. Input angular rates are measured by two vertical capacitors.Type: GrantFiled: June 15, 2001Date of Patent: May 18, 2004Inventor: Xiang Zheng Tu
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Publication number: 20040079632Abstract: A method of depositing a film on a substrate disposed in a substrate processing chamber. In one embodiment the method includes depositing a first portion of the film to at partially fill a gap formed between to adjacent features formed on the substrate. The first portion of film is deposited using a high density plasma formed from a first gaseous mixture flown into the process chamber. The film deposition process is then stopped before or shortly after the entry of the gap pinches off and the film is etched to widen entry to the gap using a two step etching process that includes a first physical etch step and a subsequent chemical etch step. The physical etch step sputter etches the first portion of film by forming a plasma from a sputtering agent introduced into the processing chamber and biasing the plasma towards the substrate. After the physical etching step, the film is chemically etched by forming a plasma from a reactive etchant gas introduced into the processing chamber.Type: ApplicationFiled: October 23, 2002Publication date: April 29, 2004Applicant: Applied Materials, Inc.Inventors: Farhan Ahmad, Michael Awdshiew, Alok Jain, Bikram Kapoor
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Patent number: 6683012Abstract: Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.Type: GrantFiled: July 9, 2002Date of Patent: January 27, 2004Assignee: Rohm Co., Ltd.Inventors: Tomonobu Hata, Kimihiro Sasaki, Akira Kamisawa
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Patent number: 6632482Abstract: Implantation process for cold cathode plasma immersion ion implantation (C2PI3) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.Type: GrantFiled: August 19, 1996Date of Patent: October 14, 2003Assignee: Varian Semiconductor Equipment Associates, Inc.Inventor: Terry Tienyu Sheng
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Patent number: 6627320Abstract: A method for producing a composition for vapor deposition comprising sintering a vapor source mixture prepared by mixing vapor sources that contain titanium dioxide and niobium pentoxide. The method is capable of forming a high-refraction layer even in low-temperature vapor deposition on a substrate. An antireflection film is formed having good scratch resistance, good chemical resistance and good heat resistance, of which the heat resistance decreases little with time, that is useful in a variety of optical elements.Type: GrantFiled: November 29, 2001Date of Patent: September 30, 2003Assignee: Hoya CorporationInventors: Takeshi Mitsuishi, Hitoshi Kamura, Kenichi Shinde, Hiroki Takei, Akinori Kobayashi, Yukihiro Takahashi, Yuko Watanabe
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Patent number: 6602558Abstract: A non-linear optical silica thin film (22) whose main material is SiO2—GeO2 is formed by irradiating positive or negative polar particles and polarization orientation is carried out in the silica thin film. For example, by repeating, while forming the silica thin film (22), forming the thin film in a state of irradiating positive particles, forming the thin film in a neutral state, such as irradiation of neutral particles or non-irradiation of particles, forming the thin film in a state of irradiating negative particles, and forming the thin film in a neutral state, a plurality of regions (22-1, 22-2, and 22-3) in different states of polarization orientation are formed in a direction of film thickness of the silica thin film (22). Distribution of charges arises in the silica thin film (22) being formed by irradiation of polar particles and polarization orientation is automatically carried out in the silica thin film (22).Type: GrantFiled: August 6, 1999Date of Patent: August 5, 2003Assignee: Toyota Jidosha Kabushiki KaishaInventors: Osamu Komeda, Hiroshi Hasegawa
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Patent number: 6569534Abstract: An optical material including a crystalline silicon and FexSi2 in the form of dots, islands, or a film is provided. The FexSi2 has a symmetrical monoclinic crystalline structure belonging to the P21/c space group and is synthesized at the surface or in the interior of the crystalline silicon. The monoclinic structure corresponds to a deformed structure of &bgr;-FeSi2 generated by heteroepitaxial stress between the {110} plane of the FexSi2 and the {111} plane of the crystalline silicon. The value of x is 0.85≦x≦1.1. An optical element using the optical material is also provided.Type: GrantFiled: March 5, 2001Date of Patent: May 27, 2003Assignee: Mitsubishi Materials CorporationInventors: Kenji Yamaguchi, Kazuki Mizushima
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Patent number: 6551718Abstract: Disclosed is a metal sulphide coating composition of the formula MXSiVRYSZFW where M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr, and Hf; Si is silicon; R is one or more elements selected from: C, B, Al, V, Cr, Fe, Co, Ni, Sm, Au, Cu, Zn, Sn, Pb, N, H, and O; S is sulphur; F is fluorine; X is 0.2 to 1.5; V is 0.02 to 3; Y is 0 to 4; Z is 0.2 to 6; and W is 0.01 to 6, and in which X, Y, Z, V, and W are given in amounts by atomic ratio. The compositions show good non-stick properties, low hydrophilia, and high stability.Type: GrantFiled: June 11, 1999Date of Patent: April 22, 2003Assignee: Gencoa Ltd.Inventor: Victor Bellido-Gonzalez
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Patent number: 6541079Abstract: A method of forming a layer of oxide or oxynitride upon a substrate including first placing a substrate having an upper surface and a lower surface in a high vacuum chamber and then exposing the upper surface to a beam of atoms or molecules, or both, of oxygen or nitrogen or a combination of same at a temperature sufficient to form a reacted layer on the upper surface of said substrate wherein said layer has a chemical composition different from the chemical composition of said substrate. The reacted upper layer is then exposed simultaneously in the chamber to atomic or molecular beams of oxygen, nitrogen or both and to a beam of metal atoms or metal molecules selected from the group consisting of Al, Si, Zr, La, Y, Sc, Sr, Ba, Ti, Ta, W, Cr, Zr, Ca, Mg, Be, Pr, Nd and Hf to form a metal oxide, a metal nitride or a metal oxynitride layer in said layer.Type: GrantFiled: October 25, 1999Date of Patent: April 1, 2003Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Jr., Eduard A. Cartier, Supratik Guha
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Patent number: 6503578Abstract: Zincselenide (ZnSe) thin films were grown on quartz glass and GaAs(100) substrates by continuous wave (CW) CO2 laser with ion beam assisted deposition. The ZnSe thin films are applied for multilayer anti-reflection coatings and blue light emitting devices. There are advantages to this technique over the Ion-Beam coating, MBE, MOCVD and PLD methods for fabricating layered semiconductors. It is cheaper and safer than Ion-Beam coating, MBE, MOCVD and others. It is cheaper and safer to heat the target locally by using a continuous wave laser so that contaminations and heat radiation are reduced. It is also cheaper and safer to avoid the splash of PLD.Type: GrantFiled: May 5, 2000Date of Patent: January 7, 2003Assignee: National Science CouncilInventors: Pey-Shiun Yeh, Jyh-Shin Chen, Cheng-Chung Jaing, Hsiang-Ming Tseng, Long-Sheng Liao, Ming-Chih Lee
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Publication number: 20020182447Abstract: Disclosed is a metal sulphide coating composition of the formula M X Si V R Y S Z F W where: M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr and Hf, Si is silicon, R is one or more elements selected from C, B, Al, V, Cr, Fe, Co, Ni, Sm, Au, Cu, Zn, Sn, Pb, N, H and O; S is sulphur; F is fluorine; X is 0.2 to 1.5; V is 0.02 to 3; Y is 0 to 4; Z is 0.2 to 6; and W is 0.01 to 6, and in which X, Y, Z, V and W are given in amounts by atomic ratio.Type: ApplicationFiled: June 11, 1999Publication date: December 5, 2002Inventor: VICTOR BELLIDO-GONZALES
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Patent number: 6475573Abstract: A substrate is coated with a coating system including at least one diamond-like carbon (DLC) inclusive layer(s) using an ion beam deposition technique. Prior and/or during the ion beam deposition of the DLC inclusive layer, the substrate (e.g., glass substrate) is heated to a temperature of from about 100-400 degrees C. so that at least a surface of the substrate is heated when the DLC inclusive layer(s) is deposited thereon via the ion beam deposition technique. This heating may result in improved adherence of a coating system to the underlying substrate.Type: GrantFiled: November 1, 2000Date of Patent: November 5, 2002Assignee: Guardian Industries Corp.Inventors: Vijayen S. Veerasamy, Rudolph Hugo Petrmichl
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Patent number: 6447652Abstract: A Raman spectrum of a thin film which must be formed is measured in a thin-film forming step for forming the thin film on a member to be processed in an atmosphere, the pressure of which has been reduced. Moreover, the conditions under which the thin film is formed are controlled in accordance with a result of measurement of the Raman spectrum. At this time, the measurement of the Raman spectrum is continuously performed in an in-line manner while the thin film is being continuously formed on the elongated-sheet-like member to be processed. The measurement of the Raman spectrum is performed while the focal point of a probe of a Raman spectrometer is being controlled with respect to the member to be processed or while the output of a laser beam from the Raman spectrometer is being controlled. The thin film which must be. formed is, for example, a protective film of a magnetic recording medium. The protective film is, for example, a hard carbon film (a DLC film).Type: GrantFiled: April 5, 2000Date of Patent: September 10, 2002Assignee: Sony CorporationInventors: Shunji Amano, Hiroshi Hayashi, Ryoichi Hiratsuka
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Patent number: 6379873Abstract: There is disclosed a method of constructing photosensitive waveguides on silicon wafers through the utilization of a Plasma Enhanced Vapor Deposition (PECVD) system. The deposition is utilized to vary the refractive index of resulting structures when they have been subject to Ultra Violet (UV) post processing.Type: GrantFiled: December 22, 1998Date of Patent: April 30, 2002Assignee: Unisearch LimitedInventors: Michael V. Bazylenko, David Moss, Mark Gross, Pak Lim Chu
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Patent number: 6358572Abstract: A method for manufacturing a nonlinear optical thin film of a silica glass system with sufficient nonlinear optical characteristics, in which a glass substrate 12 is disposed within a vacuum deposition chamber 10 and an electron beam is applied to a SiO2—GeO2-system glass placed on a hearth liner 14 to form a SiO2—GeO2-system thin film on the surface of the substrate 12. In an application of this method, ions of argon, for example, are emitted from an ion source to produce dipoles in the deposited SiO2—GeO2-system thin film. By applying an electric field to the SiO2—GeO2-system thin film thus formed, the dipoles are oriented to let the thin film exhibit nonlinear optical characteristics.Type: GrantFiled: September 20, 1999Date of Patent: March 19, 2002Assignee: Toyota Jidosha Kabushiki KaishaInventors: Naoki Nakamura, Hiroshi Hasegawa, Kiyohito Murata, Hideki Nakayama
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Patent number: 6335062Abstract: A method of ion implantation using oxygen backfill and a modified surface layer formed therefrom are provided. The method of ion implantation includes the steps of placing a substrate metal in an ion implantation vacuum chamber, introducing oxygen into the ion implantation vacuum chamber and directing a beam of ions at the substrate metal. The modified surface includes a substrate metal and implanted atoms at a surface of the substrate metal. The implanted atoms are integrated with the substrate metal. The substrate metal has an implanted atom concentration of at least 5 atomic % to a depth of over 250 Å.Type: GrantFiled: September 13, 1994Date of Patent: January 1, 2002Assignee: The United States of America as represented by the Secretary of the NavyInventors: Bruce D. Sartwell, Paul M. Natishan
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Patent number: 6329023Abstract: A magnetic hard disk drive comprising a magnetic disk and a magnetic head slider, characterized in that said magnetic head slider is coated with a layer having a contact angle of 50° or more when measured by using a lubricant coated on the magnetic disk, is free from start failure due to stiction caused by adhesion of the lubricant to the slider surface.Type: GrantFiled: February 16, 2001Date of Patent: December 11, 2001Assignee: Hitachi, Ltd.Inventors: Hiromitsu Tokisue, Sunao Yonekawa, Nobuyuki Ishii, Yasuyuki Horiguchi, Yoshishige Endo, Yasuhiro Yoshimura, Yutaka Ito, Osamu Narisawa, Hiroshi Yuyama, Youichi Inoue, Yukiko Ikeda
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Publication number: 20010043938Abstract: An inorganic antimicrobial composition has the formula AB2 O4, wherein A and B are low temperature far infrared irradiating metals, A is Mg, Zn, Mn, Ni, Co, or Fe(II), B is Al, Cr(III), Mn(III) or Fe(III), and O is oxygen. An antimicrobial article is made by coating said composition on a porous honeycomb-shaped substrate. An organic antimicrobial article is made from a quaternary ammonium salt coated on a porous honeycomb-shaped substrate. Processes of making the antimicrobial articles are provided.Type: ApplicationFiled: February 7, 2001Publication date: November 22, 2001Inventors: Yen-Kuen Shiau, Chung-Hsun Wu
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Patent number: 6303192Abstract: A method for making a multi-layered integrated circuit structure, includes depositing a methyl compound spin on glass layer over a substrate. The spin on glass layer is treated by plasma-deposition to form a SiO2 skin on the methyl compound spin on glass layer and then treated again by plasma-deposition to form a cap layer which adheres to the SiO2 skin.Type: GrantFiled: July 22, 1998Date of Patent: October 16, 2001Assignee: Philips Semiconductor Inc.Inventors: Rao V. Annapragada, Tekle M. Tafari, Subhas Bothra
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Publication number: 20010028982Abstract: In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.Type: ApplicationFiled: February 23, 2001Publication date: October 11, 2001Inventors: Satoshi Okazaki, Tamotsu Maruyama, Yukio Inazuki, Hideo Kaneko, Shinichi Kohno
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Patent number: 6300641Abstract: A process for modifying the surfaces of a polymer, ceramic, ITO or glass by irradiating energized ion particles onto the surfaces of the polymer, ceramic, ITO or glass, while blowing a reactive gas directly over the surface of the polymer, ceramic, ITO or glass under a vacuum condition, to decrease the wetting angle of the surface. The process can be widely used in the fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the material surface.Type: GrantFiled: September 9, 1998Date of Patent: October 9, 2001Assignee: Korea Institute of Science and TechnologyInventors: Seok Keun Koh, Hyung Jin Jung, Won Kook Choi, Kyong Sop Han, Sik Sang Gam
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Patent number: 6294223Abstract: A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.Type: GrantFiled: December 23, 1997Date of Patent: September 25, 2001Assignee: Georgia Tech Research Corp.Inventors: Janet M Hampikian, Eden M Hunt
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Patent number: 6270857Abstract: When an insulator is irradiated with an electron beam, a pulse-shape voltage is applied to the insulator from a pulse power source. As a result, a charge-up state of the insulator can be prevented. If an object which must be subjected to surface modification is an insulator, the object can effectively be irradiated with the electron beam to perform the surface modification.Type: GrantFiled: August 10, 1999Date of Patent: August 7, 2001Assignee: Sony CorporationInventors: Minehiro Tonosaki, Mitsunori Ueda, Masato Kobayashi, Hiroyuki Okita
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Patent number: RE37718Abstract: The present invention provides for faster and stronger tissue-implant bonding by treating a ceramic implant with an ion beam to modify the surface of the ceramic. The surface modification can give the ceramic improved ion-exchange properties depending upon the particular ceramic and the type of ions used. In a preferred embodiment, a bioactive ceramic orthopaedic, dental, or soft tissue implant is bombarded with a beam of cations. When implanted in the body, the surface modification causes an increase in the release of critical ions, such as calcium or phosphorus, from the surface of the ceramic implant, and thereby accelerates implant-tissue bond formation.Type: GrantFiled: April 2, 1997Date of Patent: May 28, 2002Assignee: Southwest Research InstituteInventors: Cheryl Blanchard, Geoffrey Dearnaley, James Lankford, Jr.