Abstract: A method of microwave heating of a substrate in a plasma processing chamber wherein a heatup gas is supplied into the processing chamber, the heatup process gas is energized with microwave power to heat an exposed surface of the substrate, a reactant gas is supplied into the processing chamber and the reactant gas is energized into a plasma gas state to process the substrate.

Abstract: A PCVD process for producing coating layers of uniform thickness of domed substrates. The substrate surface to be coated is arranged in relation to the gas passage surface of a gas showerhead. In order to determine the appropriate processing parameters, in a first series of tests for one type of substrate to be coated, the size of the gas passage surfaces and the gas mass flows through the gas passage surfaces are kept constant, while the intervals between plasma impulses are gradually modified, from an initial value t.sub.A until an optimum value t.sub.eff is determined, and until the uniformity of the thickness profile of the layers generated on the substrate may no longer be improved. If required, during a second series of tests, the value t.sub.eff may be kept constant, while the thickness profile of the layers is further modified by further optimizing the local parameters and/or the gas mass flows until layer uniformity may no longer be improved.

Abstract: An apparatus for forming thin films such as protective layers on both surfaces of a substrate of a magnetic memory device has an evacuable reaction chamber sandwiched between two electron cyclotron resonance plasma generators disposed on mutually opposite sides. Each plasma generator includes a wave guide for introducing microwave energy and a magnetic coil for providing a magnetic field for generating a plasma and causing the generated plasma to move to the substrate set inside the reaction chamber with a negative bias voltage applied thereto.

Abstract: A process for producing an optical recording medium is disclosed which has a substrate and a recording film and an inorganic dielectric film, which are superposed on said substrate. The inorganic dielectric film is formed using a plasma processing device including a microwave guide means provided with an endless ring waveguide.

Abstract: An apparatus and method for facilitating plasma processing and in particular chemical plasma enhanced vapor deposition, plasma polymerization or plasma treatment of barrier materials onto the interior surface of containers barrier materials are useful for providing an effective barrier against gas and/or water permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: A microwave plasma processing apparatus comprises a plasma generation chamber, a processing chamber communicating with the plasma generation chamber, supporting of a substrate to be processed arranged in the processing chamber, a circular waveguide with slots arranged around the plasma generation chamber, and a magnetic field generation unit for generating a cusp magnetic field in the plasma generation chamber. A microwave plasma processing method using this apparatus is provided, to maintain a high-density and large-area uniform plasma, even at a low temperature, and even in a low-pressure region having a pressure of 1 mTorr.

Abstract: The remote-plasma-CVD process for coating or treating large-surface substrates includes exciting an excitation gas located remotely from a substrate surface to be coated or treated in modular plasma source devices arranged either in a linear arrangement or in a planar, grid-like arrangement over the substrate surface and feeding a reactant gas with the excitation gas from the plasma source devices to the substrate surface to excite the reactant gas with the excitation gas and thus form a coating on the substrate surface or treat the substrate surface.

Abstract: A first reactive gas is introduced into a vacuum chamber and a plasma of the thus introduced reactive gas is produced. A second reactive gas is introduced into a radical generating chamber and is dissociated to generate radicals whose density and composition are well controlled. Then, the thus generated radicals are injected into the plasma generated within the vacuum chamber such that an amount of a desired kind of radicals within the plasma is selectively increased or decreased. In this manner, a thin film having an excellent property can be deposited on a substrate placed in the vacuum chamber. Alternatively, a surface of a substrate placed in the vacuum chamber can be processed precisely and selectively.

Abstract: A method and apparatus for forming a large area functional deposited film on the surface of a continuously moving web member by means of a microwave plasma CVD process, characterized in that at the exterior face of the circumferential wall comprising a curved continuously moving web member of the microwave plasma CVD film-forming chamber, a member having a function of transporting the web member while pressing it and being provided with a mechanism capable of controlling the temperature of the web member is disposed.

Abstract: A process for CVD coating of a hollow body with a barrier layer, comprising measuring the temperature inside of the body by igniting plasma within said body with at least one ignition pulse and correlating the time between the ignition pulse and a pulse of light given off by plasma ignition, and a device for carrying out such a process.

Abstract: A plasma processing apparatus and method controls the temperature of those portions in the processing chamber to which reaction products or gaseous reaction products generated during plasma processing adhere, thereby minimizing the generation of foreign matter and ensuring high yields. A plasma processing gas is supplied to the plasma generation chamber 10 whose pressure is maintained at a predetermined value. Provided in the plasma generation chamber are a specimen mount 11 on which to mount an object to be processed and an evacuation mechanism 16 that evacuates the plasma generation chamber.

Abstract: Method and apparatus are disclosed for growing diamond films on a non-diamond substrate, such as a silicon wafer. The substrate surface is subjected to nucleation by means of a microwave-generated plasma while applying an electrical bias to the substrate and while an electrode is positioned adjacent to but spaced from the substrate surface. After the nucleation step, crystalline diamond is deposited on the nucleated surface from a carbon-containing plasma.

Abstract: A CVD method of forming a diamond coated article is disclosed, which consists essentially of a substrate and a plurality of polycrystalline diamond film layers accumulatively coated thereon in a total thickness of at least 20 .mu.m, wherein each of the polycrystalline diamond film layers (i) has a thickness of 6 to 13 .mu.m, (ii) has an average crystallite size in the surface direction thereof of 3 to 7 .mu.m, (iii) has (111) oriented diamond crystallites exposed on the surface thereof, and (iv) satisfies the relationship: I(N)/I(D)<0.2, wherein I(D) represents an intensity of diamond Raman peak in counts/sec appearing around 1333 cm.sup.-1 and I(N) represents a maximum intensity among non-diamond Raman peaks appearing between 1200 cm.sup.-1 and 1600 cm.sup.-1.

Abstract: A plasma generating gas and a reactive gas are fed into a vacuum container. A magnetic field and microwaves for plasma generation are applied to the vacuum container, whereupon plasma is generated by ECR, and whereupon, for example, an SiO.sub.2 or SiOF film is formed on aluminum wiring. In the initial phase of film deposition, the level of the radio-frequency power for plasma lead-in applied to the stage is adjusted, for example, to zero (first value includes zero) in advance. Then, after the SiO.sub.2 or SiOF film has been deposited to a thickness of tens of nanometers, for example, the radio-frequency power for plasma lead-in is adjusted to a normal power level (second value) and applied to the stage. Thereupon, an intensive anisotropic plasma is generated, and a potential distribution corresponding to the self-bias is formed in the plane direction of the wafer. Since the thin SiO.sub.

Abstract: A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extends through the opening and removably supports the substrate support in the interior of the chamber at a position located inwardly of an inner sidewall of the chamber. The mounting arrangement includes a mounting flange and a support arm. The mounting flange is attached to an exterior surface of the chamber and the support arm extends between the substrate support and the mounting flange. The chamber includes a single vacuum port in a central portion of an endwall of the chamber spaced from the substrate support. The vacuum port is connected to a vacuum pump which removes gases from the interior of the chamber and maintains the chamber at a pressure below atmospheric pressure.

Abstract: A process for coating an exterior of a lamp is disclosed, which comprises performing the coating in a microwave reactor by a microwave plasma CVD process and coupling microwave radiation into the microwave reactor with a microwave power greater than or equal to a power threshold value at which a plasma with reduced microwave permeability is ignited in the microwave reactor.

Abstract: An article comprising a soft, polysiloxane elastomer having a hardness of 5-55 durometer units (Shore 00), the elastomer having a pressure sensitive adhesive on at least one of its surfaces is described. A process for bonding a pressure sensitive adhesive to the soft polysiloxane elastomeric is also described.

Abstract: A plastic vessel has a barrier coating comprising sequentially arranged barrier layers of organic polymer and of inorganic oxides, nitrides or oxynitrides. The barrier coating preferably has at least two inorganic barrier layers. The thickness of the inorganic barrier layers lies between 2 and 300 nm and the thickness of the organic barrier layer lies between 2 and 1000 nm. The total thickness of the layer packet should not exceed 0.1 mm.

Abstract: A process for depositing an adherent polycrystalline diamond thin film on a glass substrate, by chemical vapor deposition (CVD) at 1 to 15 torr and low temperatures of the substrate of between about 350 to 600.degree. C. using hydrogen and methane and optionally carbon dioxide. The substrate has diamond particles deposited on it or is polished with diamond particles prior to CVD. The process produces films which are clear and adherent.

Abstract: A process for producing a thin film of a fluoride comprising reacting a gaseous fluorinating agent and gas of a volatile organometallic compound in a gas phase in a reactor, wherein a plasma of the gaseous fluorinating agent obtained by activating the gaseous fluorinating agent by microwave under a condition of electron cyclotron resonance is used as a fluorine source, and the fluoride is deposited on a substrate by reacting the plasma of the gaseous fluorinating agent with the gas of a volatile organometallic compound at outside of an area of generation of the plasma. A thin film of a fluoride which contains very little impurities such as carbon, oxygen, and organic substances, and is highly pure, transparent, and consolidated is produced.

Abstract: A plasma enhanced chemical vapor deposition process for depositing a titanium nitride film on a polymeric substrate is provided, the process including placing the polymeric substrate within a chemical vapor deposition chamber evacuated to a pressure within a range of from about 0.1 Torr to about 10 Torr, heating the polymeric substrate to a temperature within a range of from about 150.degree. C. to about 250.degree. C., introducing a vaporized organometallic compound and ammonia gas into the chamber, generating a plasma within the chamber, and, maintaining the polymeric substrate within the chamber for a time sufficient for a layer of titanium nitride to deposit upon the polymeric substrate.

Abstract: A process of preparing a moisture-resistant fluorine containing SiO.sub.x film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substrate on a substrate support in the process chamber, depositing a fluorine-containing SiO.sub.x film on the substrate by contacting the substrate with the plasma while maintaining temperature of the film above 300.degree. C., and nitriding an exposed surface of the film with a high density plasma. The silicon and fluorine reactants can be supplied by separate gases such as SiH.sub.4 and SiF.sub.4 or as a single SiF.sub.4 gas and the oxygen reactant can be supplied by a pure oxygen gas. The SiH.sub.4 and SiF.sub.4 can be supplied in a ratio of SiH.sub.4 /(SiH.sub.4 +SiF.sub.4) of no greater than 0.5. The process can provide a film with a fluorine content of 2 to 12 atomic percent and argon can be included in the plasma to assist in gap filling.

Abstract: A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.

Abstract: A method for depositing a hard protective coating on at least one part, wherein 10-70% of nitrogen combined with 10-70% of a mixture of helium and argon or 10-70% of neon for strongly exciting and dissociating the nitrogen and hydrogen, is added to a precursor gas, and the energy delivered to each atom of the precursor gas is selected so as to achieve so-called "Lifschitz" conditions which define the energy range in which a maximum number of diamond-like tetrahedral structures are produced instead of graphite structures.

Abstract: A method for the deposition of a diamond film, which includes the steps of immersing metallic or nonmetallic substrate in and electroless nickel plating bath containing a reducing agent to form a nickel layer; and depositing the diamond film on the electroless nickel plated substrate. As a result, employing electroless plating to form an inter layer is improved. In addition, the diamond film can be formed regardless of the type of materials used.

Abstract: In a vapor phase apparatus such as a plasma chemical vapor deposition (CVD) having a pair of electrodes, a surface of one of the electrodes has an uneven shape (concave portion and convex portion). An interval between the electrodes is 10 mm or less. A density of a convex portion is increased in a center portion of the electrode. An aspect ratio of the uneven shape is increased from a peripheral portion of the electrode to a center portion of the electrode. The aspect ratio represents a ratio (b/a) of a pitch (a) and a height (b) of the convex portion.

Abstract: For generating uniform high-density plasma over a large area with a low power thereby achieving high-quality plasma process at a high speed even at a low temperature, there is provided a microwave plasma processing apparatus comprising a plasma generation chamber having a periphery separated from the ambient air by a dielectric member, microwave introduction means utilizing an endless annular wave guide tube provided around the plasma generation chamber and provided with plural slots, a processing chamber connected to the plasma generation chamber, support means for a substrate to be processed provided in the processing chamber, gas introduction means for the plasma generation chamber and the processing chamber, and evacuation means for the plasma generation chamber and the processing chamber, wherein the circumferential length L.sub.g of the endless annular wave guide tube, the wavelength .lambda..sub.g of the microwave in the endless annular wave guide tube, the circumferential length L.sub.

Abstract: An adhering, continuous diamond film of optical or semiconductor quality is deposited on a substrate by forming on the substrate a layer of a nitride and then depositing diamond on the nitride without mechanical treatment or seeding of the substrate or the nitride. A substrate of silicon or silicon carbide has been used by depositing a layer of silicon dioxide directly on the substrate and then directly depositing the nitride layer on the silicon dioxide. A polycrystalline diamond film has been deposited by heating the substrate and nitride layer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon with the nitride being a refractory nitride to withstand the temperature at which the diamond is deposited. Deposition of the diamond is facilitated by adding oxygen to the mixture after a sufficient thickness of diamond is deposited to protect the nitride layer from oxidation.

Abstract: A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

Abstract: The present invention is directed to methods and apparatus for depositing optical thin film coatings simultaneously onto both sides of at least one substrate in a dual-frequency plasma-enhanced chemical vapor deposition vacuum reaction chamber utilizing microwave and radio frequency energies. The substrate can be a continuous substrate, such as a flexible polymer web, or it can be one or more discrete substrates, such as rigid plastic, glass, or glass/polymer composite substrates. The substrate can be processed in a stationary or an in-line processing mode. In addition, the coatings deposited simultaneously onto both sides of the substrate can be identical, i.e. symmetrical, or different, i.e., non-symmetrical. The plasma attributes and reaction conditions on either side of the substrate can be independently controlled to provide either identical or different coating compositions and properties on the two sides of the substrate.

Abstract: A method of manufacturing a semiconductor device including the steps of: (a) transporting a semiconductor wafer into a plasma process system, the semiconductor wafer having a semiconductor layer, a field insulating film and a gate insulating film formed on the semiconductor layer, said gate insulating film having a breakdown voltage of B (V) and a thickness of 10 nm or thinner, a conductive layer of a structured antenna formed on the gate insulating film and the field insulating film, the conductive layer having an antenna ratio of 500 or higher, and an insulating material pattern formed on the conductive layer, the insulating material pattern having an opening with an aspect ratio larger than 1; and (b) processing the semiconductor wafer in plasma having an electron temperature of Te (eV) equal to or less than B. With this method, it is possible to prevent damages to a gate insulating film even during a fine pattern process.

Abstract: A method for performing plasma downstream processing by generating plasma of an oxygen-containing gas with a microwave in a space having a thickness of 1/10, or less, of a wavelength .lambda. of the microwave, deriving the generated plasma of the oxygen containing gas from such space through an opening formed around the central portion of such plasma generating space through a gap having a loop-shaped cross section in a plane parallel to the space and folded cross section in a plane including a central portion normal to such space; and irradiating the generated plasma of the oxygen containing gas derived from the plasma generating space to an object to be processed.

Abstract: A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by ECR chemical vapor deposition, wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

Abstract: In a method of manufacturing a semiconductor device having a multilayer interconnection structure, when a silicon oxide film is formed onto an electric wiring on a semiconductor substrate by the use of plasma deposition, a first high frequency wave of a constant value is provided for producing plasma while a second high frequency wave of a pulsed amplitude having a predetermined pulse interval and a predetermined rest interval is supplied onto said semiconductor substrate. Silane gas, oxygen gas and argon gas are employed as deposition gases, wherein the argon gas is periodically supplied during a pulsed interval.

Abstract: Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.

Abstract: A method and apparatus are disclosed employing a microwave applicator for use with an electron cyclotron resonance (ECR) plasma source for applications including, but not limited to, etching and chemical vapor deposition. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises one or more pairs of slotted antenna arrays, injects and distributes microwave power about the entire periphery of a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals for efficiently distributing microwave power uniformly about the periphery of the plasma forming portion. The position and orientation of the radiating stubs cause microwave power to be launched into the plasma in the form of propagating waves with a polarization suitable of electron cyclotron heating.

Abstract: A method for forming the coated substrate includes a first step of forming the intermediate layer on the substrate in a vacuum chamber, and a second step of forming the hard carbon film on the intermediate layer within the same vacuum chamber. The first step may involve evaporation or sputtering of material atoms for the intermediate layer, either with or without plasma generation, or directly forming a plasma from a gas containing the material atoms. The second step may involve forming a plasma from a gas that contains carbon. Another method involves generating a plasma, applying a high frequency voltage to the substrate so as to generate a self-bias of not more than -20 V, and supplying a reaction gas that contains carbon.

Abstract: A process is disclosed for making improved diamond coatings bonded to substrates by using intermediate bonding layers engineered to reduce the residual stress in the diamond coatings.

Abstract: A method for producing at least a polymer surface layer on at least part of the inner surface of a hollow article that is at least partially of plastic, comprising coating said at least part of the inner surface of the hollow article by establishing a low pressure gas atmosphere within the hollow article, formin a polymerizable plasma within the article by excitation of the gas atmospher within the article by high-frequency electromagnetic energy, and allowing polymerization of the gas atmosphere to take place, whereby a polymerized coating is applied to said part of the inner surface, the gas atmospherre that forms the plasma containing a component that predominantly forms chains at sufficient speed and can be polymerized under the particular plasma conditions, and a component that forms predominantly branching or cross-linking points and can be polymerized under the particular plasma conditions.

Abstract: A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si--H bonds.

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction.

Abstract: Crystalline carbon-based thin film structures are formed in which a compositionally-graded intermediate layer is first deposited on a substrate, and a crystalline carbon-based thin film such as silicon carbide or diamond is deposited thereafter on the intermediate layer. The compositionally-graded intermediate layer has a carbon content which increases in a direction away from the substrate. The compositionally-graded intermediate layer is effective in reducing problems associated with the lattice mismatch between the thin film and the substrate which hamper conventional hetero-epitaxial growth of high quality crystalline carbon-based thin films.

Abstract: High-quality SiO.sub.2 films may be deposited at low temperatures by plasma-enhanced chemical vapor deposition using disilane (Si.sub.2 H.sub.6) and nitrous oxide (N.sub.2 O) as silicon and oxygen precursors in an otherwise conventional reactor such as a parallel plate plasma reactor. The properties of the SiO.sub.2 films deposited at 120.degree. C. using Si.sub.2 H.sub.6 and N.sub.2 O were not significantly different from those of conventional SiH.sub.4 -based SiO.sub.2 films deposited at the significantly higher temperature range 250.degree.-350.degree. C. PECVD deposition of SiO.sub.2 films using Si.sub.2 H.sub.6 and N.sub.2 O provides a practical low temperature process for fabricating microdevices and circuits. This low temperature process can be used for deposition in the presence of polymers, semiconductors, and other components that would melt, decompose, or otherwise be sensitive to higher temperatures. Fluorinated silicon oxide may also be deposited at the relatively low temperature of 120.degree.

Abstract: The present invention provides a process for depositing diamond by chemical vapor deposition without using conventionally-used hydrogen, which is an explosive gas, as a reaction gases. The process includes contacting a substrate with a two-component gas mixture, under the conditions of a substrate temperature of 150.degree. C.-900.degree. C., a pressure of 1-50 torr, an input microwave power of 250-450 W. The two-component gas mixture is a hydrocarbon (C.sub.x H.sub.y) plus CO.sub.2 with a flow rate ratio of the C.sub.x H.sub.y to CO.sub.2 of 0.2-0.8, or a gasified liquid state oxygen-containing hydrocarbon (C.sub.x H.sub.y O.sub.z) plus CO.sub.2 with a flow rate ratio of the C.sub.x H.sub.y O.sub.z to CO.sub.2 of 12-17. High quality diamond can be obtained even at low temperature of 180.degree. C.

Abstract: High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Abstract: The invention concerns a process and a device for surface-modification by physico-chemical reactions with the following steps: a) contacting a solid surface having a crystalline or amorphous structure with a reactive, gaseous fluid (gas, gas mixture, vapour or vapour mixture) which is to interact with the surface; (b) supplying activating energy to the contact area between fluid and surface by means of ions or plasmas, in order to trigger reactions between said partners. In order to improve such a process and device, the activating energy is supplied as ions having at least a double charge and low kinetic energy or plasma streams with a sufficient proportion of ions having at least a double charge and low kinetic energy. The kinetic energy imparted to the ions is selected so that it allows the ions to closely approach the surface atoms but no to enter the surface.

Abstract: A method and apparatus for efficiently depositing a dielectric film with a preselected thickness pattern, in particular, a homogeneous, uniform diamond or diamond-like film, on large area substrates through the use of opposing plasma torches and linearly superimposing of microwave modes within the reaction chamber creating and maintaining an extended linear plasma in close proximity to the substrate surfaces and utilizing laminar flow of the reactant gases in the plasma and over the surfaces. Substrate surfaces can be moved past the opposing torches permitting the coating of large area, rectangularly-shaped substrate surfaces in a simple manner. Alternatively, the plasma horn or horns can be moved across the substrate permitting coating of large area, rectangularly-shaped substrate surfaces.

Abstract: The invention relates to a plasma CVD method for producing a gradient layer wherein the layer gradient is produced in the direction of layer growth by changing at least one plasma power parameter during the coating process. According to the invention, thin gradient layers are generated with high precision by supplying the plasma power in a pulsed manner and adjusting the layer gradient by changing the plasma power parameters of pulse amplitude, pulse duration and/or pulse interval.

Abstract: Passivating coatings are formed on populated electronic boards, such as a sealed chip on board electronic module, or the like, using a high density plasma deposition method that employs an electron cyclotron resonance (ECR) reactor. A populated electronic board is disposed in the electron cyclotron resonance reactor. A high density nitride plasma is generated by means of electron resonance in the reactor. The plasma is formed adjacent to a magnetic field coil where an ECR condition is established. The high density plasma forms a passivating coating that covers the populated electronic board with a silicon nitride passivating layer. To form the plasma, a mixture of silane and ammonia may be injected into the reactor to produce excited atoms that form a substantially oxygen-free nitride passivating coating.

Abstract: A microwave plasma processing process and apparatus useful in the fabrication of integrated circuit (IC) or similar semiconductor devices, wherein the object or material to be processed, such as a semiconductor wafer, is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.