Abstract: The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

Abstract: Photoresist compositions are provided comprising a radiation sensitive component and at least two distinct novolak resins. In one aspect, photoresists of the invention exhibit notably high dissolution rates, such as in excess of 800 angstroms per second in aqueous developer solution. In another aspect, photoresists of the invention can exhibit good photospeeds, such as 100 mJ/cm2 or less.

Abstract: The invention provides a cured film and a positive type photosensitive resin composition unlikely to cause a decrease in light emission luminance or shrinkage of pixels and high in long term reliability. [Solution] The invention provides a cured film comprising a cured product of a photosensitive resin composition including an alkali-soluble resin (a), a photoacid generating agent (b), at least one compound (c) selected from the group consisting of cyclic amides, cyclic ureas, and derivatives thereof, and a thermal crosslinking agent (d), the thermal crosslinking agent (d) containing an epoxy compound, oxetanyl compound, isocyanate compound, acidic group-containing alkoxymethyl compound, and/or acidic group-containing methylol compound, and the total content of the compound (c) in the cured film being 0.005 mass % or more and 5 mass % or less.

Abstract: Methods and apparatus to control grayscale lithography are disclosed. A disclosed example apparatus for adjusting a grayscale lithography process includes an optical measurement device to optically measure portions of a patterned wafer, and a processor to calculate a profile based on the measured portions, and to determine an adjustment of the grayscale lithography process based on the calculated profile. The disclosed apparatus also includes an adjuster to control the grayscale lithography process based on the adjustment.

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

Abstract: A method for curing photosensitive polyimide (PSPI) films includes the steps of: depositing a PSPI film on a selected substrate, and curing the film by microwave heating at a selected temperature from about 200 to 340° C. in a selected atmosphere containing an oxygen concentration from about 20 to 200,000 ppm. The process atmosphere may be static or flowing. The addition of oxygen improves the removal of acrylate residue and improves the Tg of the cured film, while the low processing temperature characteristic of the microwave process prevents the oxygen from damaging the polyimide backbone. The method may further include the steps of photopatterning and developing the PSPI film prior to curing. The process is particularly suitable for dielectric films on silicon for electronic applications.

Abstract: A photosensitive resin composition can achieve both resolution of a fine pattern and conductivity after a heat treatment. The photosensitive resin composition includes: (A) conductive fine particles whose surfaces are coated with an elemental carbon and/or a carbon compound, and (B) an alkali-soluble resin having an acid dissociating group.

Abstract: New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

Abstract: A method for curing photosensitive polyimide (PSPI) films includes the steps of: depositing a PSPI film on a selected substrate, and curing the film by microwave heating at a selected temperature from about 200 to 340° C. in a selected atmosphere containing an oxygen concentration from about 20 to 200,000 ppm. The process atmosphere may be static or flowing. The addition of oxygen improves the removal of acrylate residue and improves the Tg of the cured film, while the low processing temperature characteristic of the microwave process prevents the oxygen from damaging the polyimide backbone. The method may further include the steps of photopatterning and developing the PSPI film prior to curing. The process is particularly suitable for dielectric films on silicon for electronic applications.

Abstract: The present invention relates to a positive-type photosensitive resin composition comprising (A) a modified novolac-type phenol resin having an unsaturated hydrocarbon group, (B) a novolac-type phenol resin obtained from metacresol and paracresol, (C) a novolac-type phenol resin obtained from orthocresol, (D) a compound generating an acid by light, and (E) a polybasic acid or a polybasic acid anhydride, wherein the content of the (E) component is lower than 40 parts by mass per 100 parts by mass of the total amount of the (A) component, the (B) component, the (C) component and the (D) component.

Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. R3 represents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of R3s are identical or different.

Abstract: A photosensitive resin composition includes: an acrylic copolymer comprising a polymerization product of a first monomer comprising at least one selected from an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride, and a second monomer comprising an olefin-based unsaturated compound; a photosensitive component comprising at least one 1,2-quinonediazide-5-sulfonic acid ester compound selected from compounds represented by Chemical Formulae 1 to 4; a coupling agent; and a solvent, wherein a total amount of asymmetric compounds in the photosensitive component is greater than or equal to 45 area percent as determined by high performance liquid chromatography: wherein R1 is a hydroxyl group or a methyl group, and NQD is a 1,2-quinonediazide 5-sulfonyl group.

Abstract: The invention relates to a positive photosensitive resin composition without color off after etching. The invention also provides a method for manufacturing a thin-film transistor array substrate, a thin-film transistor array substrate and a liquid crystal display device.

Abstract: A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching.

Abstract: A compound represented by general formula (b1) shown below (in the formula, Y1 represents a divalent linking group; W represents S, Se or I; R1 represents a hydrocarbon group; represents an alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; when W represents I, m+n=2, and when W represents S or Se, m+n=3, provided that m?1 and n?0; p represents an integer of 0 to 5; and X? represents a counteranion.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) an alkali soluble resin prepared by a phosphorous-containing diamine represented by the following Chemical Formula 1, (B) a photosensitive diazoquinone compound, and (C) a solvent. A photosensitive resin film prepared using the same and a semiconductor device including the photosensitive resin film are also disclosed. In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) an alkali soluble resin; (B) a novolac resin including a repeating unit represented by Chemical Formula 6; (C) a photosensitive diazoquinone compound; (D) a silane compound; and (E) a solvent, a photosensitive resin film prepared by using the positive photosensitive resin composition, and a semiconductor device including the photosensitive resin film.

Abstract: The invention relates to a novel positive working photosensitive composition having: at least one photoacid generator; at least one novolak polymer; at least one polymer, having a polymer backbone, said polymer comprising a structure of the following formula: wherein R1-R5 are, independently, —H or —CH3, A is a linear or branched C1-C10 alkylene group, B is a C1-C12 alkyl or alicyclic group, D is a linking group that may be a chemical bond, a carboxylate group, wherein the carbonyl carbon is bonded to the polymer backbone, or a —COOCH2— group, wherein the carbonyl carbon is bonded to the polymer backbone, Ar is a substituted or unsubstituted aromatic group or heteroaromatic group, E is a linear or branched C2-C10 alkylene group, G is an acid cleavable group. The invention further relates to a process for using the novel composition for forming an image.

Abstract: The present invention provides polyimide applied to the buffer coating of semiconductors and a photosensitive resin composition including the same. The polyimide is a polyimide polymer represented by Chemical Formula 1 below. Further, the present invention provides a photosensitive resin composition, including 1) BDA-series soluble polyimide having an i-ray permeability of 70% or more; 2) a polyamic acid having elongation of 40% or more; 3) a novolak resin, and 4) diazonaphthoquinone-series photosensitive substance and having a high resolution, high sensitivity, an excellent film characteristic, and mechanical physical properties which are the requirements of semiconductor buffer coating.

Abstract: A modified novolak phenolic resin is obtained by reacting a novolak phenolic resin containing at least 50 wt % of p-cresol with a crosslinker. This method increases the molecular weight of the existing novolak phenolic resin containing at least 50 wt % of p-cresol to such a level that the resulting modified novolak phenolic resin has heat resistance enough for the photoresist application.

Abstract: The present invention relates to a positive type photosensitive resin composition and an organic light emitting device black bank comprising the same, and more particularly, an organic light emitting device black bank comprising the photosensitive resin composition according to the exemplary embodiment of the present invention may further have a function of a black matrix without an additional process, such that it is possible to simplify a manufacturing process of the organic light emitting device and largely improve visibility.

Abstract: The present invention relates to a photosensitive resin composition, which comprises an alkali-soluble resin (A), a compound (B) containing vinyl unsaturated group(s), a photoinitiator (C), ortho-naphthoquinone diazide sulfonic acid ester (D), a thermal initiator (E) and a solvent (F). The photosensitive resin composition added with the ortho-naphthoquinone diazide sulfonic acid ester (D) and the thermal initiator (E) can have excellent resolution and development adherence. Moreover, the present invention further provides a spacer or a protective film formed by the aforementioned photosensitive resin composition, as well as a liquid crystal display device (LCD) including the aforementioned spacer or protective film.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) at least one dissolution controlling agent selected from a compound including a repeating unit represented by the following Chemical Formula 1, a compound including a repeating unit represented by the following Chemical Formula 2, or a combination thereof, (B) a polybenzoxazole precursor, (C) a photosensitive diazoquinone compound, and (D) a solvent. An organic insulator film for a display device manufactured using the same and a display device are also disclosed. In Chemical Formulae 1 and 2, each substituent is the same as defined in the detailed description.

Abstract: A material for a microlens having heat resistance, high resolution and high light-extraction efficiency is provided. A positive resist composition comprises an alkali-soluble polymer containing a unit structure having an aromatic fused ring or a derivative thereof, and a compound having an organic group which undergoes photodecomposition to yield an alkali-soluble group. The positive resist composition has coating film properties of a refractive index at a wavelength of 633 nm of 1.6 or more and a transmittance at wavelengths of 400 to 730 nm of 80% or more. A pattern forming method comprises applying the positive resist composition, drying the composition, exposing the composition to light, and developing the composition.

Abstract: The invention relates to a photosensitive polysiloxane composition that has good thermal transmittance, good chemical resistance and good sensitivity and good refractivity. The invention also provides a method for forming a thin film on a substrate, a thin film on a substrate and an apparatus.

Abstract: A photoresist composition including a binder resin including a novolac resin represented by Chemical Formula 1, a diazide photosensitive initiator, and a solvent including a base solvent and an auxiliary solvent, wherein the base solvent includes propylene glycol monomethyl ether acetate, and the auxiliary solvent includes dimethyl-2-methylglutarate and ethyl beta-ethoxypropionate, wherein in Chemical Formula 1, R1 to R9 are each independently a hydrogen atom or an alkyl group, “a” is an integer number from 0 through 10, “b” is an integer number from 0 through 100, and “c” is an integer number from 1 through 10.

Abstract: Disclosed are a positive photosensitive resin composition that includes (A) an alkali soluble resin including a polybenzoxazole precursor, a polyimide precursor, or a combination thereof, (B) a photosensitive diazoquinone compound, (C) a phenol compound, (D) at least one organic dye having an absorption wavelength of about 400 nm to about 700 nm, and (E) a solvent, wherein the organic dye (D) is included in an amount of about 1 to about 40 parts by weight based on about 100 parts by weight of the alkali soluble resin (A), and a photosensitive resin layer and a display device using the same.

Abstract: A photosensitive polysiloxane composition for forming a protective film having superior sensitivity is disclosed. A protective film formed from the photosensitive polysiloxane composition and an element including the protective film are also disclosed. The photosensitive polysiloxane composition includes a polysiloxane, an o-naphthoquinonediazidesulfonic acid ester, a urethane(meth)acrylate compound having at least six (meth)acryloyl groups in a molecule, and a solvent.

Abstract: Disclosed is a positive-type photosensitive resin composition which has excellent storage stability, particularly excellent sensitivity stability, and can be formed into a cured film having excellent adhesion onto a substrate when heated at 350° C. or higher or heated in the air. The positive-type photosensitive resin composition comprises (a) a polymer having, as the main component, at least one structure selected from the group consisting of a polyimide precursor structure, a polybenzoxazole precursor structure, and a polyimide structure, (b) a quinonediazide compound, (c) a silane coupling agent having a styryl group, (d) a silane coupling agent having an epoxy group, an oxetanyl group, a methacryloxy group, an acryloxy group, an amino group, an amide group or mercapto group and an alkoxysilyl group, and (e) a solvent.

Abstract: Disclosed are: a photosensitive modified polyimide resin composition having photo-fabrication property, which is excellent in the electric properties and adhesion as well as in the heat resistance, flexibility, bending property, low warping, chemical resistance and storage stability; a resin film formed from the composition; and a printed circuit board, flexible printed circuit board (FPC) and the like which comprises the film as an insulating protective film and/or interlayer insulation film. The photosensitive modified polyimide resin composition comprises a modified polyimide of a specific structure having a flexible structure such as polycarbonate; a photosensitizer; a curing agent; and a solvent.

Abstract: A positive photoresist composition includes 3 to 80 parts by mass of a novolac phenol resin (B) relative to 100 parts by mass of a cresol novolac resin (A).

Abstract: A photosensitive resin composition includes: an alkali-soluble resin; an o-naphthoquinonediazidesulfonic acid ester; a silsesquioxane having at least two thiol groups in a molecule; and a solvent. The silsesquioxane is obtained by subjecting to condensation a silane material which includes a thiol-group-containing silane represented by RaSi(ORb)3. Ra represents a C1-C8 organic group that contains a thiol group and that is free from an aromatic group, or an organic group that contains a thiol group and an aromatic group. Rb independently represents hydrogen, a C1-C6 alkyl group, a C1-C6 acyl group, or a C6-C15 aromatic group.

Abstract: A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin.

Abstract: This invention relates to a photo-curing polysiloxane composition including a polysiloxane, a quinonediazidesulfonic acid ester, a methylene alkoxyaryl-containing compound as a curing agent, and a solvent for dispersing the polysiloxane, the quinonediazidesulfonic acid ester, and the methylene alkoxyaryl-containing compound. This invention also provides a protecting film made from the photo-curing polysiloxane composition, and an element containing the protecting film.

Abstract: Polymeric materials, methods for making the polymeric materials, and photoresist formulations utilizing the polymeric materials are disclosed. In one aspect, a polymeric material is provided including a condensation product of a reaction mixture comprising an aldehyde with a phenolic monomer composition comprising m-cresol, p-cresol, 3,5-dimethyl phenol, and 2,5-dimethyl phenol. The polymeric material may be further contacted with a photoactive compound and a solvent to form a photoresist formulation.

Abstract: Disclosed are a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a first polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1 and a repeating unit represented by the following Chemical Formula 2, and having a thermally polymerizable functional group at at least one of the terminal end; (B) a dissolution controlling agent including a novolac resin including a repeating unit represented by the following Chemical Formula 4; (C) a photosensitive diazoquinone compound; (D) a silane compound; (E) an acid generator; and (F) a solvent, a photosensitive resin film prepared using the same, and a semiconductor device including the photosensitive resin film.

Abstract: A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

Abstract: Disclosed is a photosensitive novolac resin including a structural unit represented by the following Chemical Formula 1 and structural unit represented by the following Chemical Formula 2, wherein R11, R12, R13, and R14 in Chemical Formulae 1 and 2 are the same as defined in the detailed description, a positive photosensitive resin composition including the same, a photosensitive resin film fabricated using the same, and a semiconductor device including the photosensitive resin composition.

Abstract: A negative-type photosensitive resin composition which is good in sensitivity and resolution, a pattern forming method by the use thereof wherein a pattern which can be developed in an alkali aqueous solution, is excellent in sensitivity, resolution and heat resistance and has a good shape is obtained, and highly reliable electronic parts are provided. The negative-type photosensitive rein composition includes (a) a polymer that has a phenolic hydroxyl group at a terminal and is soluble in the alkali aqueous solution, (b) a compound that generates an acid by irradiating active light, and (c) a compound that can be crosslinked or polymerized by an action of the acid.

Abstract: The present invention relates to a positive photosensitive polyimide composition that includes polyimide, a polyamic acid, and a photoactive compound. An organic insulating layer for organic light-emitting devices (OLED), which includes the positive photosensitive polyimide composition, may control a taper angle and outgassing, and has excellent adhesion in respects to a substrate, water repellent control ability, and storage stability and the like.

Abstract: Embodiments in accordance with the present invention encompass self-imageable film forming compositions that comprise norbornene-type polymers and that can be formulated to be either positive tone imaging or negative tone. The films formed thereby are useful in the forming of microelectronic and optoelectronics devices.

Abstract: Polymers and compositions for forming self-imageable films encompassing such polymers that encompass norbornene-type repeating unit having at least one phenolic functionality and maleic anhydride-type repeating unit, which can be formulated to be either positive tone imaging or negative tone imaging. The films formed thereby are useful as self-imageable layers in the manufacture of microelectronic, such as semiconductor, and optoelectronic devices.

Abstract: Disclosed are a positive photosensitive resin composition including (A) an alkali soluble resin including a polybenzoxazole precursor, a polyimide precursor, or a combination thereof, (B) a photosensitive diazoquinone compound, (C) a compound represented by the following Chemical Formula 1, and (D) a solvent, and a display device and an organic light emitting device using the same. The Chemical Formula 1 is the same as defined in the detailed description.

Abstract: There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1): [where R1, R2, and, R3 are independently a C1-6 alkylene group or oxyalkylene group which are optionally branched; and E1, E2, and E3 are independently a group containing a structure of Formula (2) or Formula (3): (where R4 is a hydrogen atom or a methyl group)]; and a component (D): a solvent.

Abstract: Copolymers and compositions thereof useful for forming self-imageable films encompassing such copolymers are disclosed. Such copolymers encompass norbornene-type repeating units and maleic anhydride-type repeating units where at least some of such and maleic anhydride-type repeating units have been ring-opened. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices.

Abstract: The resin composition of the present invention is a resin composition characterized by including (a) a polyimide, a polybenzoxazole, a polyimide precursor or a polybenzoxazole precursor, (b) 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, or 2,3-dihydroxynaphthalene, and (c) a thermal cross-linking agent having a specific structure. By the use of the resin composition of the present invention, it is possible to reduce the transmittance in the visible region of a cured film while maintaining the transmittance of a resin film before curing.

Abstract: A positive photosensitive resin composition includes: (A) a polybenzoxazole precursor; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a polyamic acid ester compound; and (E) a solvent. The positive photosensitive resin composition can reduce film shrinkage, can have high sensitivity, high resolution, and excellent residue removal properties, and can provide good pattern shapes.

Abstract: Disclosed are a novel phenol compound comprising a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof, and a positive photosensitive resin composition including the same.

Abstract: Polyimide-based polymers and copolymers thereof are provided. Further provided is a positive type photoresist composition comprising at least one of the polyimide-based polymers and copolymers thereof as a binder resin. The photoresist composition exhibits high resolution, high sensitivity, excellent film characteristics and improved mechanical properties, which are required for the formation of semiconductor buffer coatings.