Abstract: A positive photosensitive resin composition excellent in sensitivity and resolution, characterized by comprising 100 parts by mass of (A) a hydroxypolyamide comprising repeating units represented by the general formula (1), 1 to 50 parts by mass of (B) a photoacid generator, 5 to 20 parts by mass of (C) a carboxylic acid compound having 6 to 18 carbon atoms as represented by the general formula (2), and 0.01 to 70 parts by mass of (D) an alcohol having 4 to 14 carbon atoms as represented by the general formula (3).

Abstract: A positive-type photosensitive resin composition that exhibits excellent adhesion to a substrate after a humidification treatment includes (A) an alkali-soluble resin, (B) a photosensitive diazoquinone compound, and (C-1) a silicon compound shown by the following formula (1), wherein R1 and R2 represent alkyl groups having 1 to 10 carbon atoms, R3 represents an organic group, and R4 represents an alkylene group having 1 to 10 carbon atoms, and i represents an integer from 0 to 2.

Abstract: The present invention provides a positive photosensitive resin composition, characterized by comprising 1 to 50 parts by mass of a photo-acid generator and 0.01 to 70 parts by mass of a terpene compound in combination with 100 parts by mass of a hydroxypolyamide having repeating units. A terpene compound can be combined with a hydroxypolyamide having a particular structure to provide a positive photosensitive resin composition excellent in positive lithography performance such as sensitivity and resolution.

Abstract: In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

Abstract: Provided is a positive photosensitive resin composition which is advantageous not only in excellent sensitivity, resolution and adhesion, but also in excellent heat resistance even when the composition is cured by a low-temperature process at equal to or lower than 280° C., as well as low water absorption and capability to give a pattern with favorable configuration. The positive photosensitive resin composition contains: (a) alkaline aqueous solution-soluble polyamide having a polyoxazole precursor structure; (b) an o-quinonediazide compound; and (c) a latent acid generator which generates acid upon heating. The composition optionally further contains (d) a compound having a phenolic hydroxyl group or (e) a solvent.

Abstract: A poly(imide-azomethine)copolymer that has a low linear thermal expansion coefficient and a method for producing the same copolymer are provided. Also provided are a poly(amic acid-azomethine)copolymer that is a precursor polymer of the poly(imide-azomethine)copolymer; a positive photosensitive resin composition composed of the precursor polymer and a photosensitizer; and a method for making a fine pattern of poly(imide-azomethine) copolymer from the resin composition.

Abstract: A polyimide compound has a low coefficient of linear thermal expansion comparable to the coefficient of linear thermal expansion of a conductor to be covered by the polyimide. The polyimide compound is less susceptible to contraction caused by dehydration process. The compound is obtained by the reaction of a highly linear acid dianhydride with a highly linear diamine and has a high imidization rate. Having a low coefficient of linear thermal expansion comparable to the conductor to be covered by the polyimide, the polyimide compound of the present invention is less susceptible to contraction that occurs during polyimide formation. The polyimide compound is suitable for making curl-free flexible wiring boards.

Abstract: A photosensitive resin composition includes (a) a resin comprising a repeating unit represented by a following formula (1); (b) a photosensitive agent; (c) a thermo-acid generator; and (d) a compound having at least one of an alkoxymethyl group and an acyloxymethyl group, wherein R1 represents a divalent to octavalent organic group containing 2 or more carbon atoms, R2 represents a divalent to hexavalent organic group containing 2 or more carbon atoms, each of R0 and R3 independently represents a hydrogen atom or an organic group containing 1 to 20 carbon atoms, m represents an integer of 0 to 2, and each of p and q represents an integer of 0 to 4, provided that p+q>0.

Abstract: A photosensitive resin composition contains: a polymer represented by the formula (I) as defined herein, in which 0.5 mol % or more of A in the polymer represented by the formula (I) is a protective group; a photosensitizing agent; a compound containing a methacryloyl or acryloyl group within a molecule of the compound; and a solvent.

Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Abstract: According to the present invention, there is provided: a photosensitive resin composition comprising a polyamide resin having a specific structure, a photosensitive agent, and a compound having at least two sulfonate ester groups; a production method for a cured relief pattern using the photosensitive resin composition; and a semiconductor device containing the cured relief pattern formed according to the production method.

Abstract: The developability of a photosensitive polyimide resin composition with a weakly alkaline aqueous solution is improved without reduction in the solubility in general-purpose organic solvents even when a part of the diamine component is replaced with a diaminopolysiloxane-based compound or a bis(aminobenzoate)-based compound in order to reduce the warpage characteristics of the photosensitive polyimide resin composition by reducing its modulus of elasticity. The photosensitive polyimide resin composition is capable of being developed in a positive manner with a weakly alkaline aqueous solution and is soluble in an organic solvent. The photosensitive polyimide resin composition contains: a polyimide resin including a polyimide unit represented by formula (1) and a polyimide unit represented by one of formulas (2) and (3); an analogue of melamine cyanurate; and an analogue of diazonaphthoquinone.

Abstract: A photosensitive resin composition comprising (a) a compound obtained by reacting a polybasic acid anhydride with the phenolic hydroxyl groups of a novolac-type phenol resin, and (b) a 1,2-quinonediazide compound. The photosensitive resin composition, which comprises component (b) composed of a 1,2-quinonediazide compound in combination with a component (a) obtained by reacting a polybasic acid anhydride with the phenolic hydroxyl groups of a novolac-type phenol resin, exhibits sufficiently high photosensitivity, image contrast, resolution and adhesiveness.

Abstract: Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.

Abstract: Provided are an ester group-containing poly(imide-azomethine)copolymer having low linear thermal expansion coefficient; a production method thereof; an ester group-containing poly(amide acid-azomethine)copolymer to serve as the precursor of the poly(imide-azomethine)copolymer; a positive photosensitive composition including the poly(amide acid-azomethine)copolymer and a photosensitizer; a method for forming a fine pattern of an ester group-containing poly(imide-azomethine)copolymer from the composition; and a method for forming a fine pattern of an ester group-containing poly(imide-azomethine)copolymer by etching a photosensitizer-free, ester group-containing poly(imide-azomethine)copolymer in an alkaline solution.

Abstract: The present invention relates to a positive photosensitive resin precursor composition which exhibits good storage stability after exposure. A photosensitive resin precursor composition comprises (a) a polymer essentially composed of a structural unit expressed by formula (1); (b) at least two photo acid generators; and (c) a compound having an alkoxymethyl group: wherein R1 represents an organic group with a valence of 2 to 8, having at least two carbon atoms; R2 represents an organic group with a valence of 2 to 6, having at least two carbon atoms; R3 represents hydrogen or an organic group having a carbon number in the range of 1 to 20; n represents a number ranging from 10 to 100,000; m represents an integer in the range of 0 to 2; and p and q represent integers in the range of 0 to 4 and satisfy p+q>0.

Abstract: There is provided a positive photoresist composition capable of forming a pattern with excellent resolution, excellent resistance to reflection off the substrate, and excellent perpendicularity. The positive photoresist composition comprises (A) an alkali-soluble novolak resin in which a portion of the hydrogen atoms of all the phenolic hydroxyl groups are substituted with 1,2-naphthoquinonediazidesulfonyl groups, and (B) a dissolution promoter represented by a general formula (b-1) and/or a general formula (b-11) shown below.

Abstract: This invention relates to a positive photosensitive resin composition allowing development with an alkaline aqueous solution and excellent in resolution, photosensitivity and pattern form even if the film formed from the resin is thick. Furthermore, this invention relates to a photosensitive resin composition comprising (a) a polymer having one or more phenolic hydroxyl groups, (b) a compound having a phenolic hydroxyl group and containing only one group selected from a methylol group and alkoxymethyl group, and (c) a photo acid generator.

Abstract: The resist composition of the present invention contains at least one of a tannin and a derivative thereof. The method of forming a resist pattern of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; and exposing and developing the resist film. The method of manufacturing a semiconductor device of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; exposing and developing the resist film to form a resist pattern; and patterning the surface of the object by performing an etching through the resist pattern as a mask.

Abstract: There is disclosed a photosensitive resin composition for interlayer insulating films, surface protection films or the like, which exhibits excellent resolution and can be developed with an aqueous alkaline solution. The photosensitive resin composition is prepared using a polymer at least having a constitutional repeating unit represented by general formula II: wherein R1 represents hydrogen atom or methyl group; R2 to R9 independently represent hydrogen atom, halogen atom or alkyl group having 1 to 4 carbon atoms; X represents —CH?N—, —CONH—, —(CH2)n—CH?N— or —(CH2)n—CONH— and the N atom in X is bonded to a carbon atom in the benzene ring having AO— at an o-position; A represents hydrogen atom or a group being decomposed by an acid; and n represents a positive integer of 1 to 3.

Abstract: Provided is a positive photosensitive resin composition which is advantageous not only in excellent sensitivity, resolution and adhesion, but also in excellent heat resistance even when the composition is cured by a low-temperature process at equal to or lower than 280° C., as well as low water absorption and capability to give a pattern with favorable configuration. The positive photosensitive resin composition contains: (a) alkaline aqueous solution-soluble polyamide having a polyoxazole precursor structure; (b) an o-quinonediazide compound; and (c) a latent acid generator which generates acid upon heating. The composition optionally further contains (d) a compound having a phenolic hydroxyl group or (e) a solvent.

Abstract: A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.

Abstract: A positive-working photosensitive composition comprising one or more polybenzoxazole precursor polymers, a diazonaphthoquinone photoactive compound which is the condensation product of a compound containing from 2 to about 9 aromatic hydroxyl groups with a 5-naphthoquinone diazide sulfonyl compound and a 4-naphthoquinone diazide sulfonyl compound, and at least one solvent, and the use of such compositions to form a relief pattern on a substrate thereby forming a coated substrate.

Abstract: Disclosed is a hydroxy polyamide represented by the following general formula (1) and having a 5-amino isophthalic acid derivative structure in the main chain structure. (1) (In the formula, m and n represent integers, X represents at least one tetravalent organic group, Y represents at least one divalent organic group having a 5-amino isophthalic acid derivative structure, and Z represents at least one divalent organic group).

Abstract: A photosensitive resin composition comprising: (a) at least one polybenzoxazole precursor polymer; (b) at least one compound having Structure VI ?wherein, V is CH or N, Y is O or NR3 wherein R3 is H, CH3 or C2H5, R1 and R2 each independently are H, C1-C4 alkyl group, C1-C4 alkoxy group, cyclopentyl or cyclohexyl, or alternatively, R1 and R2 can be fused to produce a substituted or unsubstituted benzene ring; and (c) at least one solvent; wherein the amount of the compound of Structure VI present in the composition is effective to inhibit residue from forming when the composition is coated on a substrate and the coated substrate is subsequently processed to form an image on the substrate, and with the proviso that if the polybenzoxazole precursor polymer solely consists of polybenzoxazole precursor polymers that do not contain a photoactive moiety in the polymer, then (d) at least one photoactive compound is also present in the composition.

Abstract: An embodiment of the invention provides a method for the treatment of a substrate made of paper or a substrate containing paper as support material for a semiconductor component. In an embodiment, the substrate surface is contacted with a solution comprising at least one phenol-containing base polymer and/or copolymer and a crosslinker component. A polymer formulation deposits from the solution onto the surface. The solution may further include an acid catalyst. Embodiments include a semiconductor component formed according to the method of the invention.

Abstract: A positive photoresist composition comprising an alkali-soluble resin, a 1,2-quinonediazide compound, an organic solvent, and a fluorinated organosilicon compound of formula (1) serving as a surfactant can be effectively coated to uniformity over large areas and is improved in resist pattern profile. Rf is a C5-C30 perfluoroalkyl group containing at least one ether bond, Q is a polyether group consisting of an ethylene glycol and/or propylene glycol polymer chain, R is H or C1-C4 alkyl, X is a divalent linking group exclusive of oxygen, Y is a divalent linking group, p is an integer of at least 3, and 0<n<3.

Abstract: The present invention relates to a photoresist composition for an MMN (multi-micro nozzle) head coater, more particularly to a photoresist composition comprising a novolak resin with a molecular weight ranging from 2000 to 12,000, a diazide photoactive compound, an organic solvent, and a Si-based surfactant for use in liquid crystal display circuits. The photoresist composition for liquid crystal display circuits of the present invention solves the stain problem, which occurs in MMN head coaters used for large-scale substrate glass, and improves coating characteristics, so that it can be utilized industrially and is expected to significantly improve productivity.

Abstract: A positive photosensitive siloxane composition having high photosensitivity and having such properties as high heat resistance, high transparency and low dielectric constant may be used to form a planarization film for a TFT substrate, an interlayer dielectrics or a core or cladding of an optical waveguide. The positive photosensitive siloxane composition includes a siloxane polymer, quinonediazide compound and solvent, and a cured film formed of the composition has a light transmittance per 3 ?m of film thickness at a wavelength of 400 nm of 95% or more.

Abstract: A photoresist resin composition comprises about 10 to about 35% by weight of an acryl-based copolymer, about 5 to about 10% by weight of a quinone diazide compound, about 55 to about 80% by weight of a solvent, and about 0.01 to about 0.5% by weight of a silane-based surfactant where the weights of each of the acryl-based copolymer, quinone diazide compound, solvent, and silane-based surfactant are based on the total weight of acryl-based copolymer, quinone diazide compound, solvent, and silane-based surfactant. An overcoating layer formed using the photoresist resin composition has improved flatness, and thus defects on a display screen may be prevented and/or reduced.

Abstract: A photosensitive resin composition comprises: a polybenzoxazole precursor (A); a naphthoquinone diazide photosensitizer (B); and a specific phenolic hydroxyl group-containing compound (C).

Abstract: Positive photosensitive insulating resin compositions of the invention contain at least (A) an alkali soluble resin having a phenolic hydroxyl group, (B) a compound having a quinonediazido group, (C) crosslinked fine particles, (D) a compound containing at least two alkyletherified amino groups in the molecule, and (F) a solvent The resin compositions have excellent resolution, electrical insulating properties and thermal shock properties. Cured products of the invention are obtained by curing these resin compositions, and they show good adhesive properties.

Abstract: The invention provides a polyamide resin having a structure represented by the formula (1), wherein about 0.1 mol % to about 30 mol % of the total amount of Y in the formula (1) has a structure represented by the formula (2), further a positive-working photosensitive resin composition comprising a diazoquinone compound, a method for producing a pattern-formed resin film using the composition, a semiconductor device and a display device using the composition, and a method for producing the semiconductor device and the display device: wherein, X is an organic group of 2 to 4 valences; Y is an organic group of 2 to 6 valences; R1 is a hydroxyl group or —O—R3 wherein m is an integer of 0 to 2; R2 is a hydroxyl group, a carboxyl group, —O—R3 or —COO—R3 wherein n is an integer of 0 to 4; R3 is an organic group having 1 to 15 carbon atoms; wherein, each of R4 and R5 is a divalent organic group; each of R6 and R7 is a monovalent organic group; n is an integer of 0 to 20.

Abstract: A positive photosensitive resin composition, which contains a polybenzoxazole precursor, a quinonediazide photosensitizer and a carbonate solvent, and a method of manufacturing a semiconductor device using the composition.

Abstract: A positive-working photosensitive resin composition containing an alkali soluble resin (A), a diazoquinone compound (B) and a compound (C) which contains a —CH2OH group but not a phenolic hydroxyl group, a method for producing a pattern-formed resin film using the composition, a semiconductor device and a display device using the composition, and a method for producing the semiconductor device and the display device.

Abstract: A photosensitive resin composition comprising: a quinone diazide sulfonic acid ester of a phenol compound represented by formula (I) as defined in the specification; and a polybenzoxazole precursor, and a method for manufacturing a semiconductor device using the same

Abstract: A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The solvent includes a diethylene glycol dialkyl ether that includes an alkyl group including one to five carbon atoms, an ethyl 3-ethoxy propionate, an alkyl acetate that includes an alkyl group including three to eight carbon atoms, and an alkyl lactate that includes an alkyl group including one to six carbon atoms. The composition may be used to make high-quality display panels with uniformly-coated insulating layers.

Abstract: There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist ? (?m?1) for the exposure light is such that 0.5???7.

Abstract: A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound having the structure a first silicone compound having the structure a second silicone compound having the structure The resin composition may be used in display panels.

Abstract: A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.

Abstract: A positive-working radiation-sensitive composition for use with a radiation source comprises one or more polymers capable of being eluted in an alkaline aqueous solution and a development-enhancing compound. The invention provides a positive-working photosensitive composition of good sensitivity for use with one or both of ultra-violet radiation and an infrared laser radiation source. The composition is stable in its state before exposure and has an excellent handling property. The sensitivity of a radiation-sensitive coating based on the composition of this invention is increased without compromising the handling characteristics. Radiation-sensitive elements based on the composition of the invention have good development latitude. A positive-working lithographic printing precursor is based on the radiation-sensitive composition coated on a hydrophilic surface.

Abstract: A photosensitive resin composition suitable for forming a thick film and an ultra-thick film used for forming a thick resist pattern used in the process of forming a magnetic pole on a magnetic head and a bump, which comprises (A) an alkali soluble novolak resin, (B) an alkali soluble acrylic resin, (C) an acetal compound, and (D) an acid generator.

Abstract: The present invention provides for a light-sensitive photoresist composition useful for imaging thick films, comprising a polymer which is insoluble in an aqueous alkali developer but becomes soluble prior to development, a photoacid generator which produces a strong acid upon irradiation and a photobleachable dye. The invention further provides for a process for imaging the photoresist of the present invention, especially where the thickness of the photoresist is up to 200 microns and where the process comprises a single exposure step.

Abstract: The invention provides a positive-working photosensitive resin composition comprising an alkali soluble resin (A), a diazoquinone compound (B) and a compound (C) which contains a —CH2OH group but not a phenolic hydroxyl group, a method for producing a pattern-formed resin film using the composition, a semiconductor device and a display device using the composition, and a method for producing the semiconductor device and the display device.

Abstract: A photosensitive resin composition comprising: (d) at least one polybenzoxazole precursor polymer (e) at least one compound having structure VI V1—Y—V2 VI wherein Y is selected from S, O, NR2, (HOCH)p, and each R1 is selected H, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group or a halogen, each R2 is selected from H, SH, CH3, C2H5, and a linear or branched C1–C4 alkyl group containing a thiol group; p is an integer of from 1 to 4, and wherein V1 and V2 are independently selected from the group consisting of wherein, m is independently an integer from 0 to 4 with the proviso that m=0 only when Y= n is an integer from 1 to 5; and each R1 is defined as above; and (f) at least one solvent; wherein the amount of the compound of Structure VI present is an amount effective to inhibit residue from forming when the composition is coated on a substrate and the substrate is subsequently processed to form an image, and with the proviso that if the polybenzoxazole precursor

Abstract: The present invention is directed to a photosensitive resin composition comprising (a) a resin having a specific structure, (b) a photosensitive agent, and (c) an organic solvent having a boiling point at atmospheric pressure of 100° C. or higher and 140° C. or lower, the content of the component (c) being 50% by weight or more and 100% by weight or less based on the total amount of the organic solvent, and to a process for producing a heat-resistant resin film using the same. According to the present invention, there is provided a photosensitive resin composition which is less likely to cause defects such as transcribed trace and line drawing.

Abstract: Positive photosensitive insulating resin compositions of the invention contain at least (A) an alkali soluble resin having a phenolic hydroxyl group, (B) a compound having a quinonediazido group, (C) crosslinked fine particles, (D) a compound containing at least two alkyletherified amino groups in the molecule, and (F) a solvent. The resin compositions have excellent resolution, electrical insulating properties and thermal shock properties. Cured products of the invention are obtained by curing these resin compositions, and they show good adhesive properties.

Abstract: A positive photosensitive resin composition comprising: (a) at least one polybenzoxazole precursor polymer having structure I or II; (b) at least one photosensitive compound selected from compounds described by structures III–V, (c) at least one solvent; and (d) optionally an adhesion promoter.

Abstract: The invention is a curable cyclobutarene based polymer comprising acid functional pendant groups. The cured polymer displays excellent qualities of toughness, adhesion, dielectric constant, and low stress. The preferred system is soluble in an aqueous base and can be used to generate patterned films with excellent resolution without the need to handle organic developer solvents.

Abstract: A radiation-sensitive composition for use in printing plates is described. The composition comprises: (a) at least one novolak; (b) at least one naphthoquinone diazide derivative; and (c) a copolymer comprising units A, B, and a unit C comprising a cyclic terminal urea group, wherein unit A is present in an amount of about 5 to about 50 mol % and has the formula is represented by wherein R1 is selected such that the homopolymer of A is alkali-soluble, unit B is present in an amount of about 20 to about 70 mol % and has the following formula is represented by wherein R2 is selected such that the homopolymer of B has a glass transition temperature greater than 100° C., preferably a glass transition temperature in the range from about 100 to about 380° C.