Abstract: A positive working lithographic plate precursor comprising a support having a hydrophilic surface and a coating thereon comprising a positive working, photosensitive composition and an aryl alkyl polysiloxane. A method of preparing a positive working lithographic plate precursor comprising coating on a support having a hydrophilic surface a coating comprising, in admixture, a positive working photosensitive composition and an aryl alkyl polysiloxane.

Abstract: A composition of a positive photosensitive resin precursor includes (a) a polyamic acid ester and/or a polyamic acid each having at least one selected from a carboxyl group, a phenolic hydroxyl group, a sulfonic acid group and a thiol group at the end of a principal chain of the polymer, (b) a compound having a phenolic hydroxyl group, and (c) a quinonediazide sulfnate. The composition can be subjected to dissolution in an alkaline developer.

Abstract: A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho-ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.

Abstract: The invention encompasses a semiconductor processing method in which silicon dioxide is etched with a solution that comprises an alkyl peroxide. An exemplary alkyl peroxide is methyl peroxide. The invention also encompasses a method of forming an isolation region. A patterned silicon nitride material is formed over a semiconductive substrate. The patterned silicon nitride material has an opening extending therethrough. The opening is further extended into the substrate underlying the silicon nitride material, and is then filled with silicon dioxide. Subsequently, the silicon dioxide is chemical-mechanical polished with a slurry having an alkyl peroxide therein.

Abstract: A lithographic printing plate has a coating which is imaged by heating an area of the coating with an infrared laser and actinically reacting the coating in the heated area with ultraviolet or visible radiation. The coating can be either positive working or negative working and the coating contains an infrared absorber. The imaging time is reduced since the actinic reaction rate is increased at the elevated temperature.

Abstract: A positive photosensitive composition showing a difference in solubility in an alkali developer as between an exposed portion and a non-exposed portion, which comprises, as components inducing the difference in solubility, (a) a photo-thermal conversion material, and (b) a high molecular compound, of which the solubility in an alkali developer is changeable mainly by a change other than a chemical change.

Abstract: The present invention relates to novel monomers and their polymers, which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10)alkyl, substituted or non-substituted (C1-C10)ether, substituted or non-substituted (C1-C10)ester, or substituted or non-substituted (C1-C10)ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

Abstract: A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and/or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (C) 4,4′-bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.

Abstract: The present invention relates to a photosensitive compound comprising a vinyl polymer compound which is insoluble in water and soluble in an aqueous alkaline solution and o-naphthoquinonediazide compound, wherein said vinyl polymer compound is a copolymer comprising at least one monomer unit derived from monomer compound (A): a compound having an alkaline-soluble group represented by general formula (I), (II) or (III) as defined in the specification, and at least one monomer unit derived from monomer compound (B): (meth)acrylate having poly(oxyalkylene) chain. A lithographic printing plate prepared from a presensitized plate having a photosensitive layer of said photosensitive compound of the present invention shows improvement of abrasion resistance, printing durability, chemical resistance, development latitude, and contamination property.

Abstract: A radiation sensitive resin composition which can be processed and molded at low temperatures and has resolution, solvent resistance, adhesion to a substrate and storage stability required as an interlaminar insulating film. This radiation sensitive resin composition comprises: (A) a copolymer obtained by copolymerizing (a1) an unsaturated carboxylic acid and/or an unsaturated carboxylic anhydride, (a2) an epoxy compound such as &bgr;-methylglycidyl acrylate and/or an epoxy compound such as a monomer represented by the following formula (3):  and (a3) an olefinic unsaturated compound other than the above (a1) and (a2); and (B) a 1,2-quinonediazide compound.

Abstract: A resist material having a resist and particles mixed into the resist, a major component of the particles being a cluster of carbon atoms, is provided. A method for fabricating a resist material is also provided, the method repeatedly performing: a first step of coating a substrate with a resist film; and a second step of depositing particles whose major component is a cluster of carbon atoms on the resist film. Accordingly, a resist film with high etching resistance can be obtained, and it is possible to realize a reduction in the thickness of the resist film, improvements of contrast of resist patterns; resist sensitivity; heat resistance of resist films; mechanical strength of resist patterns; and further, stabilization of resist sensitivity. Therefore, highly precise fine pattern fabrication can be realized.

Abstract: A positive photoresist composition includes (A) an alkali-soluble resin and (B) a photosensitive ingredient, in which the photosensitive ingredient (B) includes an ester of a compound represented by following Formula (I) with a 1,2-naphthoquinonediazidosulfonyl compound: 1

Abstract: A photosensitive positive working composition suitable for use as a photoresist, which comprises an admixture of at least one film forming resin; at least one photosensitizer; and a photoresist solvent mixture containing more than 50 weight percent of an alkylene glycol alkyl ether and less than 50 weight percent of either an alkyl alkoxy propionate or an alkyl amyl ketone, and a process for producing such a photoresist composition.

Abstract: The positive-working radiation sensitive resin composition which has high sensitivity, high resolution and no residues in development and ability to form a pattern having a good profile. The positive-working radiation sensitive resin composition contains a mixed radiation sensitive novolak resin comprising the mixture of 1,2-naphthoquinonediazide-4-sulfonic acid ester of an alkali soluble novolak resin and 1,2-naphthoquinonediazide-5-sulfonic acid ester of an alkali soluble novolak resin, wherein the ratio by weight of the 1,2-naphthoquinonediazide-4-sulfonyl group and 1,2-naphthoquinonediazide-5-sulfonyl group ranges from 5:95 to 20:80.

Abstract: A positive resist composition which gives improved profile without lowering other properties such as sensitivity and resolution, and comprises an alkali-soluble novolak resin, a quinone diazide type radiation-sensitive agent and N-(n-octylsulfonyloxy)succinimide

Abstract: A positive resist composition comprising, in admixture, an alkali-soluble resin, a quinone diazide compound and a mixed solvent of (B) at least one organic solvent selected from the group consisting of &ggr;-butyrolactone, 3-methoxybutanol and cyclohexanone and (A) an organic solvent other than the solvents (B) which does not have simultaneously an alkylcarbonyl group and an alkoxy group in a molecule and has a boiling point of from 140 to 180° C. under atmospheric pressure (B), which composition has a large &ggr;-value and provides an improved profile and a large depth of focus.

Abstract: A photosensitive resin composition containing a high molecular compound having at east a) a fluoro aliphatic group, and b) a group represented by formula —L—P (wherein L represents a divalent organic group connected to the skeleton of the high molecular compound, and P represents an aromatic group having a carboxyl group at the ortho-position).

Abstract: A good heat-resistant radiation-sensitive resin composition containing an alkali-soluble resin obtained by condensation, with phenols as necessary, of methylolated bisphenols represented by following general formula, a cross-linking agent and a photosensitizer. wherein R1 to R4 each represents a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or —CH2OH, whereupon at least one of R1 to R4 represents —CH2OH, and R5 and R6 each represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.

Abstract: Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.

Abstract: A positive resist composition comprising a hydroxypolyamide represented by the following general formula (I) and a photoactive component: (wherein R1 and R3 may be the same or different and are each a tetravalent aromatic group; R2 is a bivalent aromatic group; n is an integer of 2 to 150; and Z is a monovalent organic group and at least 40% of Z is a group represented by the following structural formula (II): —X—R4—(COOH)m  (II) (wherein X is a carbonyl group or a sulfonyl group; m is an integer of 0 to 3 with a proviso that m is not 0 when X is a carbonyl group; R4 is an aliphatic group not including alkenyl group or alkynyl group, an alicyclic group or an aromatic group; and, when X is a carbonyl group and R4 is an alicyclic group or an aromatic group, at least one of the carboxylic groups is at the ortho position)).

Abstract: An IR- and UV-radiation-sensitive composition comprising a diazo resin, a diazo ester, at least one novolac resin and an IR-ray absorber. A lithographic plate comprising a support coated with the said photosensitive composition.

Abstract: A photosensitive resin composition comprising (a) a photosensitizer having in its structure 1,2-diazidonaphthoquinone structure, and a methylene-bridged structure composed of two or more methyl-substituted phenol derivatives, (b) a polymer having both hydroxyl group and carboxyl group, or a combination of a polymer having hydroxyl group and one having carboxyl group, (c) a crosslinking agent capable of crosslinking hydroxyl group and carboxyl group, and (d) a solvent. This composition can form highly transparent films, and, in addition, patterns having high contrast can be obtained when this composition is used as a photoresist.

Abstract: A radiation sensitive composition comprising (A), a mixture of an isoindolinone pigment and a yellow organic pigment, (B) an alkali-soluble resin, (C) a polyfunctional monomer and (D) a photopolymerization initiator. The composition is useful for production of an additive or subtractive color filter which is used in a reflection-type color liquid crystal display device.

Abstract: Disclosed are a photosensitive polymer composition comprising (a) a polymer soluble in an aqueous alkaline solution, (b) an o-quinonediazide compound, and (c) a dissolution inhibitor for the component (a) in an aqueous alkaline solution; a method of using the composition for forming relief patterns; and electronic parts having, as a passivating film or an interlayer insulating film, the relief pattern as formed in the method. The composition has high sensitivity, and give fine relief patterns having a good profile.

Abstract: The invention is a curable cyclobutarene based polymer comprising acid functional pendant groups. The cured polymer displays excellent qualities of toughness, adhesion, dielectric constant, and low stress. The preferred system is soluble in an aqueous base and can be used to generate patterned films with excellent resolution without the need to handle organic developer solvents.

Abstract: A photosensitive resin composition comprises a base resin (e.g., novolak resins, polyvinylphenol-series polymers), a first photoactive ingredient (e.g., diazobenzoquinone derivatives, diazonaphthoquinone derivatives) and a second photoactive ingredient (e.g., mixtures with azide compounds) each having an absorption range at wavelength &lgr;1 or &lgr;2, the wavelengths thereof being different from each other. Between the first and second photoactive ingredients, at least one photoactive ingredient is substantially inert at the absorption wavelength of the other. After exposing the photosensitive resin composition to a light to form a pattern, the whole surface of the photosensitive layer is exposed to a light of the other wavelength to make the surface hardly soluble (in the case a positive pattern is formed) or readily soluble (in the case a negative pattern is formed) in a developer, and developed, thereby forming a pattern of high resolution.

Abstract: Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.

Abstract: A pattern can be precisely formed by irradiating, with an active energy beam, a positive sensitive resin composition according to this invention comprising a base polymer, an ether-bond-containing olefinic unsaturated compound and an acid-generating agent, where the base polymer is a copolymer comprising the structural units represented by formulas (1) to (3): 1

Abstract: Positive photosensitive resin compositions, which comprise (A) a polyamidate having repetitive units of general formula (I) wherein R1 is a tetravalent organic group, R2 is a divalent organic group having a phenolic hydroxyl group, three R3 groups and three R4 groups each independently are an alkyl group or a hydrogen atom, and at least two R3 groups and at least two R4 groups are alkyl groups, and (B) a compound capable of generating an acid when exposed to light, are improved in storage stability and exposure sensitivity to i-line. Such compositions can improve the reliability of electronic parts when formed into surface-protecting films or interlayer insulating films by a method including exposure to i-line, development and heating.

Abstract: A positive type photosensitive image-forming material for use with an infrared laser is provided. The material includes a substrate, a layer (A) containing not less than 50% by weight of a copolymer which contains, as a copolymerization component, not less than 10% by mol of at least one of the following monomers (a-1) to (a-3), wherein (a-1) is a monomer having in the molecule a sulfonamide group wherein at least one hydrogen atom is linked to a nitrogen atom, (a-2) is a monomer having in the molecule an active imino group represented by the following general formula (I): and (a-3) is a monomer selected from acrylamide, methacrylamide, acrylate, methacrylate and hydroxystyrene, which respectively have a phenolic hydroxyl group; and a layer (B) containing not less than 50% by weight of an aqueous alkali solution-soluble resin having a phenolic hydroxyl group. The layer (A) and the layer (B) are laminated on the substrate in that order.

Abstract: A positive resist composition, having a superior resolution as well as good resist performances such as sensitivity, depth of focus and profile, which comprises a novolac resin, a radiation-sensitive quinonediazide compound and a thioxanthone compound represented by the following formula (I): 1

Abstract: A method for preparing a positive photoresist layer is provided. In this method, a photoresist composition is drop-wise applied on an insulator layer or a conductive metal layer formed on a substrate. The photoresist composition includes a polymer resin, a sensitizer for changing solubility of the photoresist layer when exposed and a solvent. The coated substrate is rotated at the speed of 1,250 to 1,350 rpm for 4.2 to 4.8 seconds. The coated substrate is then dried and the dried substrate is exposed to some form of radiation. Next, the exposed portion is removed by using an alkaline developing solution. The solvent preferably includes 3-methoxybutyl acetate and 4-butyrolactone, or includes 3-methoxybutyl acetate, 2-heptanone, and 4-butyrolactone.

Abstract: A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 &mgr;m in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity.

Abstract: A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and/or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (C) 4,4′-bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.

Abstract: A photosensitive composition comprising a photoacid generator for forming an acid by exposing to far ultraviolet light, a pH indicator coloring so as to exhibit an absorption band at the i-line wavelength region in the presence of the acid, and an i-line photosensitizer chemically changing by exposing to the i-line; and methods for patterning and for manufacturing a semiconductor device using such a photosensitive composition. The photosensitive composition enables etching, fine pattern formation and semiconductor device manufacturing to simplify.

Abstract: A positive resist composition which gives improved profile without lowering other properties such as sensitivity and resolution, and comprises an alkali-soluble novolak resin, a quinone diazide type radiation-sensitive agent and N-(n-octylsulfonyloxy) succinimide

Abstract: A positive-type, heat-resistant photosensitive polymer composition comprising (a) a polyimide precursor or a polyimide which is soluble in an aqueous alkaline solution, (b) a compound capable of generating an acid when exposed to light, and (c) a compound having a phenolic hydroxyl group; a method of forming a relief pattern comprising a step of applying the composition onto a substrate and drying it thereon, a step of exposing it, a step of developing it, and a step of heating it; and an electronic part having as a surface-protecting film or an interlayer insulating film.

Abstract: A positive photosensitive composition showing a difference in solubility in an alkali developer as between an exposed portion and a non-exposed portion, which comprises, as components inducing the difference in solubility, (a) a photo-thermal conversion material, and (b) a high molecular compound, of which the solubility in an alkali developer is changeable mainly by a change other than a chemical change.

Abstract: A resist composition comprising (A) an alkali-insoluble or substantially insoluble polymer having acidic functional groups protected with acid labile groups, which polymer becomes alkali-soluble upon elimination of the acid labile groups, (B) a photoacid generator, and (C) a 1,2-naphthoquinonediazidosulfonyl group-bearing compound has a high resolution and sensitivity, and provides resist patterns of excellent plating resistance when used in UV lithography at an exposure light wavelength of at least 300 nm.

Abstract: Multilayer photoimageable elements, useful for forming lithographic printing members, are disclosed. The elements comprise a support, a top layer, and a chemical resistant underlayer. The underlayer is resistant to aggressive washes, such as a UV wash. In one embodiment, the underlayer comprises a copolymer of N-substituted maleimide, methacrylamide, and methacrylic acid. A process for preparing a lithographic printing member is also disclosed.

Abstract: Improved dissolution inhibition resists for use in microlithography are disclosed herein. These resists are comprised of phenolic base resin(s) having increased inhibitability and which are suitable for use in resist formulations for microlithography and semiconductor applications.

Abstract: The present invention relates to a positiive-working presensitized plate useful for preparing a lithographic printing plate comprising a positive-working photosensitive composition comprising at least one ester of 1,2-naphthoquinone-2-diazide-5-sulfonic acid, at least one ester of 1,2-naphthoquinone-2-diazide-4-sulfonic acid, and at least one polymer which is insoluble in water and soluble in an aqueous alkaline solution and which comprises at least one group or bond selected from sulfonamide group, urea bond or urethane bond. A lithographic printing plate prepared from the presensitized plate of the present invention shows improvement of chemical-resistance and printing durability, and good sensitivity, coupling property, adaptability to ball-point pen, shelf stability, and stability of sensitivity with time after exposure.

Abstract: From a heat-curable photosensitive composition comprising a cresol and/or xylenol novolac resin which has been partially 1,2-naphthoquinonediazido-4- or 5-sulfonate esterified and having a weight average molecular weight of 1,000-10,000, an epoxy compound, and a solvent therefor, a pattern featuring improved solvent resistance and heat resistance can be formed at a high sensitivity and resolution by a simple process. The pattern is suitable as an interlayer insulating film for use in thin-film magnetic heads.

Abstract: A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.

Abstract: Film-forming, functionalized polymers having 1,2-dicarboxylic acid monoester groups have at least two polymer units, one of which is acid-labile and hydrolysis-stable and the other is thermally stable. These polymers are used in particular in photoresists.

Abstract: A positive-type, heat-resistant photosensitive polymer composition comprising (a) a polyimide precursor or a polyimide which is soluble in an aqueous alkaline solution, (b) a compound capable of generating an acid when exposed to light, and (c) a compound having a phenolic hydroxyl group; a method of forming a relief pattern comprising a step of applying the composition onto a substrate and drying it thereon, a step of exposing it, a step of developing it, and a step of heating it; and an electronic part having as a surface-protecting film or an interlayer insulating film.

Abstract: In a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, Ingredient (B) contains (B-1) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (B-2) a quinonediazide ester of, e.g., methyl gallate or 2,2-bis(2,3,4-trihydroxyphenyl)propane. The composition exhibits high sensitivity and definition, and improved focal depth range properties and underexposure margin.

Abstract: A positive resist composition, having a superior resolution as well as good resist performances such as sensitivity, depth of focus and profile, is described and includes a novolac resin, a radiation-sensitive quinonediazide compound and a thioxanthone compound represented by the following formula (I): 1

Abstract: A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to tie present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

Abstract: An imagable composition, for example a coating on a lithographic printing plate, comprises a carboxylic acid derivative of a cellulosic polymer and a diazide moiety, and may be imaged in various ways, including by ultra-violet radiation, by infra-red radiation and by heat. The presence of the cellulosic polymer can act to enhance resistance to certain organic liquids and/or to increase operating speed.