Simultaneous Developing A Resist Image And Etching A Subtrate Patents (Class 430/299)
  • Patent number: 8835845
    Abstract: A method for TEM/STEM sample preparation and analysis that can be used in a FIB-electron microscope system without a flip stage. The method allows a dual beam FIB electron microscope system with a typical tilt stage having a maximum tilt of approximately 60° to be used to extract a TEM/STEM sample to from a substrate, mount the sample onto a sample holder, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to a vertical electron beam column for TEM/STEM imaging.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: September 16, 2014
    Assignee: FEI Company
    Inventor: Liang Hong
  • Patent number: 8617653
    Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having photoresist patterns thereon and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed to form fine patterns, further characterized by comprising a water-soluble polymer which contains a monomeric component and a dimeric component, wherein the total content of the monomeric component and the dimeric component in the water-soluble polymer is reduced to 10 mass % or less, and a method of forming fine patterns using the same. By the present invention, even in reducing the pattern size on a substrate having thereon patterns having different pitches, the heat shrinkage of the over-coating agent can be controlled, irrespective whether the pitch is dense or isolate, thus achieving the pattern size reduction.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: December 31, 2013
    Assignee: Tokyo Ohka Okgyo Co., Ltd.
    Inventors: Tsunehiro Watanabe, Toshiki Takedutsumi, Masanori Yagishita, Kiyofumi Mitome, Takahito Imai, Masatoshi Hashimoto, Masaji Uetsuka
  • Patent number: 8338805
    Abstract: A reticle manufacturing method of the present invention comprises the steps of holding a reference mask blank by a reference chuck to measure a surface shape of the reference mask blank as a first surface shape, holding the reference mask blank by a reticle chuck of the exposure apparatus to measure a surface shape of the reference mask blank as a second surface shape, holding the electron beam drawing mask blank by the reference chuck to measure a surface shape of the electron beam drawing mask blank as a third surface shape, calculating a difference between the measurement values of the first surface shape and the second surface shape as a first deference value, calculating, as a forth surface shape, a surface shape of the electron beam drawing mask blank held by the reticle chuck on the basis of the first deference value and the measurement value of the third surface shape, and drawing the pattern on the electron beam drawing mask blank on the basis of the forth surface shape.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: December 25, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventor: Koichi Sentoku
  • Publication number: 20120120682
    Abstract: This disclosure provides systems, methods and apparatus for providing illumination by using a light guide to distribute light. In one aspect, the light guide includes a light turning film over an optically transmissive supporting layer. The light turning film may be formed of a material deposited in the liquid state. The light turning film may be formed of a photodefinable material, which may be glass, such a spin-on glass, or may be a polymer. In some other implementations, the glass is not photodefinable. The light turning film may have indentations that define light turning features and a protective layer may be formed over those indentations. The protective layer may also be formed of a glass material, such as spin-on glass. The light turning features in the light guide film may be configured to redirect light out of the light guide, for example, to illuminate a display.
    Type: Application
    Filed: October 21, 2011
    Publication date: May 17, 2012
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventors: Teruo Sasagawa, Brian W. Arbuckle, William Cummings, Ion Bita, Kebin Li, Rashmi Rao
  • Patent number: 8101519
    Abstract: The present invention relates to a mold, a manufacturing method of the mold, and a method of forming patterns using the mold. The mold may include a main body having a convex portion and a recess portion, and a polymer layer formed over the main body by processing a surface of the main body with a high molecular weight material through a surface treatment.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: January 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seung-Jun Lee
  • Patent number: 8012675
    Abstract: A method of patterning a target layer on a substrate is described. A patterned photoresist layer is formed over the target layer, wherein the patterned photoresist layer has unexposed parts as separate islands and each unexposed part has a low proton concentration at least in its sidewalls. Acid-crosslinked polymer layers are formed only on the sidewalls of each unexposed part. A flood exposure step is performed to the substrate. A baking step is performed to the patterned photoresist layer. A development step is performed to remove the previously unexposed parts. The target layer is etched with the acid-crosslinked polymer layers as a mask.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: September 6, 2011
    Assignee: MACRONIX International Co., Ltd.
    Inventor: Chin-Cheng Yang
  • Patent number: 7250372
    Abstract: A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDresist of the patterned photoresist is measured and a first wafer with median values chosen (101) from a lot. A first time t* is found (102) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tlot is found (104). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot (106).
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: July 31, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: James B. Friedmann, Christopher C. Baum
  • Patent number: 6979648
    Abstract: A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDresist of the patterned photoresist is measured and a first wafer with median values chosen (101) from a lot. A first time t* is found (102) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tlot is found (104). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot (106).
    Type: Grant
    Filed: June 11, 2003
    Date of Patent: December 27, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: James B. Friedmann, Christopher C. Baum
  • Patent number: 6924230
    Abstract: A method for forming a conductive layer is disclosed, which has the following steps. First, a substrate is provided, and then a patterned photoresist layer having an undercut is formed on the substrate. After that, at least one conductive layer is deposited on the substrate. Finally, the patterned photoresist layer is lifted off; wherein the shape of the conductive layer remaining on the substrate is complementary to that of the patterned photoresist layer.
    Type: Grant
    Filed: September 3, 2003
    Date of Patent: August 2, 2005
    Assignee: Industrial Technology Research Institute
    Inventors: Yu-Chang Sun, Ching-Hsuan Tang, Chi-Shen Lee, Chai-Yuan Sheu
  • Patent number: 6498226
    Abstract: This invention provides cycloaliphatic polyimide having the following formula (I): wherein 1 and n are integers from 4 to 7; m is an integer from 0 to 2; p is an integer from 1 to 8; polycyclic aliphatic compound R reprents C1-8 cycloalkyl, cycloalkenyl, cycloalkynyl, norbornenyl, decalinyl, adamantanyl, or cubanyl. That cycloaliphatic polyimide can be a through transparent film, their thermal stability is over 430° C. and dielectric constant is about 2.7.
    Type: Grant
    Filed: May 3, 2001
    Date of Patent: December 24, 2002
    Assignee: Industrial Technology Research Institute
    Inventors: Kung-Lung Cheng, Shu-Chen Lin, Wen-Ling Lui, Chih-Hsiang Lin, Wei-Ling Lin, Woan-Shiow Tzeng
  • Patent number: 6420086
    Abstract: In one aspect, the invention includes a method of patterning a substrate. A film is formed over a substrate and comprises a plurality of individual molecules. The individual molecules comprise two ends with one of the two ends being directed toward the substrate and the other of the two ends being directed away from the substrate. Particle-adhering groups are bound to said other of the two ends of at least some of the individual molecules and a plurality of particles are adhered to the particle-adhering groups to form a mask over the substrate. The substrate is etched while the mask protects portions of the substrate. In another aspect, the invention encompasses a method of forming a field emission display. A material having a surface of exposed nitrogen-containing groups is formed over the substrate. At least one portion of the material is exposed to radiation while at least one other portion of the material is not exposed.
    Type: Grant
    Filed: January 16, 2001
    Date of Patent: July 16, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Jianping P. Yang, David H. Wells, Eric J. Knappenberger
  • Patent number: 6235541
    Abstract: Substrates are patterned with antibodies attached thereto at discrete locations from which absorption resistant coating is removed by selectively controlled mechanical scribing contact to avoid chemical removal so as to decrease fabrication costs and increase fabrication speed.
    Type: Grant
    Filed: May 6, 1999
    Date of Patent: May 22, 2001
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Robert A. Brizzolara
  • Patent number: 6027842
    Abstract: Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
    Type: Grant
    Filed: April 26, 1999
    Date of Patent: February 22, 2000
    Assignee: International Business Machines Corporation
    Inventors: Christopher P. Ausschnitt, Timothy A. Brunner
  • Patent number: 5886136
    Abstract: Disclosed herein is a pattern forming process comprising the steps of coating a substrate with a photosensitive resin composition comprising a polyamic compound having, at each terminal thereof, an actinic ray-sensitive functional group which has substituent groups each having a photopolymerizable carbon-carbon double bond, a photosensitive auxiliary having a photopolymerizable functional group, a photopolymerization initiator, and a solvent to form a film; subjecting the film to pattering exposure; and then developing the thus-exposed film with an alkaline developer or alkaline aqueous solution.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: March 23, 1999
    Assignees: Nippon Zeon Co., Ltd., Fujitsu Limited
    Inventors: Akira Tanaka, Masami Koshiyama, Kei Sakamoto, Yasuhiro Yoneda, Kishio Yokouchi, Daisuke Mizutani, Yoshikatsu Ishizuki
  • Patent number: 5858801
    Abstract: A patterned multiple antibody substrate for use in biosensors or immunosensors is produced by (1) coating an antibody-adsorbent substrate with a material that resists antibody adsorption, (2) using ion beam sputtering, laser ablation, or mechanical scribing to remove the coating at specific sites on the substrate, and then (3) adsorbing specific antibodies at the sites. The substrate is capable of detecting multiple chemical species simultaneously.
    Type: Grant
    Filed: March 13, 1997
    Date of Patent: January 12, 1999
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Robert A. Brizzolara
  • Patent number: 5328811
    Abstract: A method of printing an image on a substrate by applying to the substrate a film which is chemically activated by heat, and scanning the film by a beam of radiation according to the image to be printed, to chemically activate the film by heat and thereby to produce a pattern in the film according to the image scanned. The film includes a reagent capable of undergoing a redox reaction when heated in the presence of another reagent present with the film when scanned by the beam, to produce the redox reaction between the two reagents.
    Type: Grant
    Filed: June 24, 1992
    Date of Patent: July 12, 1994
    Assignee: Orbotech Ltd.
    Inventor: Mordechai Brestel
  • Patent number: 5279924
    Abstract: The method of manufacturing an optical diffraction grating element of the present invention is characterized in adopting an ion beam made from a gas chemically reacting with a glass substrate when forming a diffraction grating having a serrated profile upon the glass substrate through an ion beam etching method. Also, when manufacturing an optical diffraction grating element that is divided into a plurality of regions whereon diffraction gratings having different diffraction angles with respect to an incident light are provided, the method of the present invention is characterized in forming slits into a resist film disposed upon a transparent substrate such as a glass substrate, in accordance with the patterns of the diffraction gratings, such that the width of the slits is constant irrespectively of the regions.
    Type: Grant
    Filed: July 1, 1992
    Date of Patent: January 18, 1994
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Keiji Sakai, Katsuhiro Kubo, Yukio Kurata, Takahiro Miyake, Yoshio Yoshida
  • Patent number: 5057399
    Abstract: Nonamic acidic functionalized diamines and dianhydrides are condensed to produce abnormal acid functionalized polyamic acid/imide resins which surprisingly afford effective lift-off, by alkaline media, even after higher imidization.
    Type: Grant
    Filed: March 31, 1989
    Date of Patent: October 15, 1991
    Inventors: Tony Flaim, James Lamb, Gregg Barnes, Terry Brewer
  • Patent number: 5017459
    Abstract: A lift-off process for forming patterned films of particular use for films of metals that need to be deposited in a non-directional fashion. The process features a lift-off mask that includes a thin coating of Brewer Science ARC.RTM. PN-2 as an assisting layer under a photoresist layer.
    Type: Grant
    Filed: April 26, 1989
    Date of Patent: May 21, 1991
    Assignee: Eastman Kodak Company
    Inventor: William C. McColgin
  • Patent number: 5004673
    Abstract: A method of manufacturing surface relief patterns of variable depth in solid materials is disclosed, which patterns, when seen in cross-section, are of variable geometry.
    Type: Grant
    Filed: December 12, 1989
    Date of Patent: April 2, 1991
    Assignee: Environmental Research Institute of Michigan
    Inventor: Nickolas P. Vlannes
  • Patent number: 4998267
    Abstract: Unwanted distortion of the planar configuration of a carbon-based X-ray lithography mask, that would otherwise occur during selective etching of the (silicon) support substrate, is prevented by incorporating a compensation layer of inorganic material that effectively offsets the internal compressive stress characteristic of the carbon. For this purpose, on a top, planar surface of a silicon substrate, a multiple layer structure containing a first layer of carbon having an internal compressive stress characteristic and a second layer of inorganic material having an internal tensile stress characteristic, is plasma-deposited. The tensile stress characteristic of the inorganic layer compensates for the compressive stress characteristic of the carbon layer and causes the composite structure to retain its substantially planar configuration after the underlying silicon substrate has been etched in the course of obtaining a rim structure on which the X-ray transmissive structure is supported.
    Type: Grant
    Filed: June 23, 1989
    Date of Patent: March 5, 1991
    Assignee: Korea Electronics & Telecommunications Research Inst.
    Inventors: Jaesin Lee, Jinyung Kang
  • Patent number: 4968552
    Abstract: The present invention provides a novel approach to forming a RIE etch barrier in processes where thermally stable polymeric materials containing free carboxyl groups, such as polyamic acid polymers, are present as masking layers in the electrical device to be fabricated. The present process takes advantage of the discovery that polyamic acids complex with certain metallic cations under slightly acidic conditions to form polyamic acid salts. These salts can be made to further react with a variety of etching gases to form a non-volatile salt or oxide which imparts etch barrier properties to that portion of the polyamic acid layer exposed to the metallic cations.
    Type: Grant
    Filed: October 13, 1989
    Date of Patent: November 6, 1990
    Assignee: International Business Machines Corp.
    Inventor: Harold G. Linde
  • Patent number: 4966832
    Abstract: To mold artificial leather provided with real leather like feeling or touch on the surface thereof, a leather wrinkle pattern is formed on the artificial leather in such a way that the ridge portions are glazed and the furrow portions are matted. For the purpose of molding the above-mentioned artificial leather, the inner surface of the metallic mold is contrary formed in such a way that the ridge portions are matted but the furrow portions are glazed.
    Type: Grant
    Filed: May 11, 1989
    Date of Patent: October 30, 1990
    Assignee: Nissan Motor Co., Ltd.
    Inventor: Masaaki Shigesada
  • Patent number: 4910122
    Abstract: A light absorbing medium to be interposed under photosensitive layers, such as a photo-resist for integrated circuit "chips" to eliminate defects caused by reflected light, has a polymer vehicle which can penetrate into small depressions of a substrate and form a thin, smooth and uniform coating. The coating includes a light absorbing dye. This light absorbing layer is imageable in the process. The light absorbing material eliminates many of the defects caused by reflected light resulting in increased sharpness of the images in the photo-resist. The material reduces the losses due to defects and increases the yield of useable product.
    Type: Grant
    Filed: August 6, 1984
    Date of Patent: March 20, 1990
    Assignee: Brewer Science, Inc.
    Inventors: John W. Arnold, Terry L. Brewer, Sumalee Punyakumleard
  • Patent number: 4849323
    Abstract: Disclosed is a pattern forming method using contrast enhanced material for enhancing the resolution and contrast when forming patterns in fabrication of semiconductors or the like. This pattern forming method comprises a step of applying a contrast enhanced material for pattern forming on a photoresist, a step of exposing and a step of developing.The contrast enhanced material is a water-soluble material using a novel diazo compound so that the coefficient A of the contrast may be 10 or more, and when it is combined with g-line exposure to be used in pattern formation, a pattern of 0.5 .mu.m or less may be formed.
    Type: Grant
    Filed: August 10, 1987
    Date of Patent: July 18, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masayuki Endo, Masaru Sasago, Kazufumi Ogawa
  • Patent number: 4838989
    Abstract: The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.
    Type: Grant
    Filed: August 25, 1987
    Date of Patent: June 13, 1989
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Carol I. H. Ashby, Paul J. Brannon, James B. Gerardo
  • Patent number: 4826291
    Abstract: A method is disclosed for manufacturing a diffraction grating formed by corrugations reversed in phase between a first region and a second region through use of two kinds of photoresists of opposite photosensitive characteristics. An isolation film is introduced for preventing the photoresists from getting mixed with each other, permitting the combined use of any photoresists. A step may be further included in which the isolation film is deposited on one of two kinds of photoresist films in at least one of a first region and a second region, is subjected to two-beam interference exposure, is removed and then a degraded layer, which is formed in the surface of the above said one kind of photoresist film during the deposition of the isolation film, is removed.
    Type: Grant
    Filed: July 7, 1986
    Date of Patent: May 2, 1989
    Assignee: Kokusai Denshin Denwa Kabushiki Kaisha
    Inventors: Katsuyuki Utaka, Shigeyuki Akiba, Yuichi Matsushima
  • Patent number: 4824768
    Abstract: A method is disclosed for forming an alumina film on a selected region of a surface without forming the film on an adjacent region. An ink film composed of aluminum caboxylate compound is applied to the surface and heated to partially decompose the compound. A positive photoresist layer is preferably applied to the partially decomposed layer and selectively irradiated to define a mask overlying the selected region. Unwanted photoresist material is dissolved from the adjacent region using an aqueous alkaline solution. It is found that the solution concurrently dissolves the underlying partially decomposed aluminum compound, without dissolving the compound protected by the mask. Thereafter, the mask is stripped, and the underlying aluminum compound is heated and further decomposed to produce the desired alumina film.
    Type: Grant
    Filed: December 3, 1987
    Date of Patent: April 25, 1989
    Assignee: General Motors Corporation
    Inventors: Ruth C. O. Laugal, Adolph L. Micheli
  • Patent number: 4824766
    Abstract: A method of forming any film pattern on an arbitrary substrate, more particularly, a pattern forming method which comprises selectively forming a film on an arbitrary substrate, by use of chemical reaction, and further, a method of forming a pattern of an organic film by selectively removing the organic film at a lower layer, with the pattern of the Langmuir-Blodgett's film containing Si as a mask.
    Type: Grant
    Filed: March 27, 1987
    Date of Patent: April 25, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Kazufumi Ogawa
  • Patent number: 4810601
    Abstract: The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.
    Type: Grant
    Filed: June 30, 1986
    Date of Patent: March 7, 1989
    Assignee: International Business Machines Corporation
    Inventors: Robert D. Allen, Kaolin N. Chiong, Ming-Fea Chow, Scott A. MacDonald, Jer-Ming Yang, Carlton G. Willson
  • Patent number: 4756988
    Abstract: Dry-film, negative-acting photoresist layers are used in the formation of many articles such as circuit boards, printing plates and the like. Laminable monolayers of photoresist can suffer from slow speeds, brittleness, variable adhesive characteristics, and narrow processing latitude during development and exposure. The use of a crosslinked or crosslinkable integral thermoplastic adhesive laer on the dry-film, negative-acting photoresist layer improves the properties and performance of the photoresist.
    Type: Grant
    Filed: September 29, 1982
    Date of Patent: July 12, 1988
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: William L. Kausch, John P. Vikesland
  • Patent number: 4751171
    Abstract: A method of forming any film pattern on an arbitrary substrate, more particularly, a pattern forming method which comprises selectively forming a film on an arbitrary substrate, by use of chemical reaction, and further, a method of forming a pattern of an organic film by selectively removing the organic film at a lower layer, with the pattern of the Langmuir-Blodgett's film containing Si as a mask.
    Type: Grant
    Filed: July 2, 1985
    Date of Patent: June 14, 1988
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Kazufumi Ogawa
  • Patent number: 4705739
    Abstract: A radiation-sensitive, imageable article comprises in sequence a substrate, a vapor-deposited colorant layer capable of providing a reflection optical density of at least 0.6 to a 10 nm band of the electromagnetic spectrum between 280 and 900 nm, a vapor-deposited metal or metalloid layer of uniform composition, and a photosensitive resist layer which is non-integral with said colorant layer, the ratio of the thickness of said colorant layer to said metal or metalloid layer being at least 7:1.
    Type: Grant
    Filed: April 24, 1986
    Date of Patent: November 10, 1987
    Assignee: Minnesota Mining and Manufacturing Company
    Inventor: Richard S. Fisch
  • Patent number: 4698238
    Abstract: A pattern is formed by providing a reaction field in which a photo-induced reaction proceeds when a substrate is irradiated with light so as to form a pattern on the substrate, and setting, in the reaction field, conditions for establishing a nonlinear relationship between the intensity of the light and the rate of the photo-induced reaction. The substrate is selectively irradiated with light in the reaction field under the conditions set therein so as to selectively form a pattern in the irradiated portion of the substrate in accordance with the selective irradiation.
    Type: Grant
    Filed: February 5, 1986
    Date of Patent: October 6, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Nobuo Hayasaka, Haruo Okano, Yasuhiro Horiike
  • Patent number: 4660934
    Abstract: A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
    Type: Grant
    Filed: March 12, 1985
    Date of Patent: April 28, 1987
    Assignee: Kokusai Denshin Denwa Kabushiki Kaisha
    Inventors: Shigeyuki Akiba, Katsuyuki Utaka, Kazuo Sakai, Yuichi Matsushima
  • Patent number: 4587700
    Abstract: A dual alloy cooled turbine is manufactured by casting a hollow cylinder of first nickel-base alloy material with high creep resistance to produce directionally oriented grain boundaries. A preform of a second nickel-base alloy material with high tensile strength and high low-cycle-fatigue strength is diffusion bonded into the bore of the hollow cylinder by subjecting the cylinder and preform to hot isostatic pressing. The resulting cylindrical block is cut into thin precisely flat wafers. A plurality of alignable holes for forming fluid cooling passages are photochemically etched into the individual wafers. The wafers then are laminated by vacuum diffusion bonding techniques, with the holes aligned to form fluid cooling passages. The resulting laminated block is machined to produce the turbine wheel with turbine blades through which the cooling passages extend.
    Type: Grant
    Filed: June 8, 1984
    Date of Patent: May 13, 1986
    Assignee: The Garrett Corporation
    Inventors: George Curbishley, George S. Hoppin, III
  • Patent number: 4549944
    Abstract: In the development of exposed light-sensitive reproduction layers using an aqueous electrolyte developer the parts of the layer corresponding to the non-image areas are removed by electrochemical treatment. An electrolyte is used which has a pH in the range from 2.0 to 10.0 and contains at least one salt in a concentration of 0.1 weight percent up to the saturation limit of the solution for the particular salt. The electrolyte may also contain 0.1 to 5 weight percent surfactant.
    Type: Grant
    Filed: August 17, 1982
    Date of Patent: October 29, 1985
    Assignee: Hoechst Aktiengesellschaft
    Inventor: Engelbert Pliefke
  • Patent number: 4455364
    Abstract: There is disclosed a process for forming a metallic image which comprises treating a composite material for forming a metallic image in the presence of a metal chelating agent. Also disclosed is a composite material for use in the process containing a support, a metallic thin layer and a light-sensitive resin layer, wherein a metal chelating agent is included in at least one layer on the support, and a treating solution for the same wherein the metal chelating agent is included therein.According to the invention, it is possible to obtain a metallic image having highly sharp edges in the etched portions.
    Type: Grant
    Filed: November 5, 1982
    Date of Patent: June 19, 1984
    Assignee: Konishiroku Photo Industry Co., Ltd.
    Inventor: Nobumasa Sasa
  • Patent number: 4411981
    Abstract: A method for Te pattern formation in the manufacture of a thin-film transistor having a semiconductor layer of Te. Developing and etching of the substrate having the Te layer and a resist layer overlaying the Te layer are simultaneously carried out by the use of a developing and etching solution after having been exposed to rays of UV-light.
    Type: Grant
    Filed: February 25, 1981
    Date of Patent: October 25, 1983
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Shigehiro Minezaki
  • Patent number: 4405707
    Abstract: Relief structures comprised of double lacquer layers on substrates already having relief structures for integrated semiconductor circuits are produced by applying a lower lacquer layer onto such substrate and which is composed of a material which does not cross-link or decompose due to radiation energy and which has only relatively slight sensitivity at the radiation energy dosage range utilized for structuring; applying an upper lacquer layer onto the lower lacquer layer and which upper layer is thinner relative to the thickness of the lower layer by a factor of at least 2 and is composed of a highly sensitive negative lacquer material; generating desired relief structures in the upper lacquer layer and removing those portions of the lower lacquer which are not covered by the upper negative lacquer layer.
    Type: Grant
    Filed: July 16, 1981
    Date of Patent: September 20, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hartwig Bierhenke, Siegfried Birkle, Roland Rubner
  • Patent number: 4379827
    Abstract: A structure, and method, for producing images such as microform, particularly, microfilm. The structure in its preferred form comprises a flexible substrate having a film, layer or coating of a metal, or metal-like, image forming material on at least one surface thereof. The image forming material, in turn, is provided with a film, layer or coating of an energy sensitive material. The structure is characterized in that it can be exposed to actinic radiation, for example, and developed in a fraction of a second to provide a dry microform having high acuity, contrast and resolution, excellent archival properties, and, significantly, in the case of positive working energy sensitive materials, unique add-on capabilities. The structure and method also have utility in the graphic arts field.
    Type: Grant
    Filed: April 12, 1973
    Date of Patent: April 12, 1983
    Assignee: Energy Conversion Devices, Inc.
    Inventor: Robert W. Hallman
  • Patent number: 4369241
    Abstract: In forming a fluorescent screen of a black matrix type color picture tube, a light absorptive film is first formed on the inner surface of a face plate of the color picture tube. Formed on the light absorptive film is a light-hardenable photosensitive resin film which in turn is exposed to light through a shadow mask at portions corresponding to phosphor applying portions. The unexposed portion of the light-hardenable photosensitive film is then developed. Finally, the exposed portion of the light-hardenable photosensitive film and portion of the light absorptive film therebeneath are removed to partly perforate the light absorptive film so that in the light absorptive film, openings are formed into which the phosphor is applied.
    Type: Grant
    Filed: February 9, 1981
    Date of Patent: January 18, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Yoshiyuki Odaka, Kiyoshi Miura
  • Patent number: 4356254
    Abstract: An image-forming method is described using a light-sensitive material comprising a support and a light-sensitive layer on the support, said light-sensitive layer containing an o-quinonediazide compound as a first component and a basic carbonium dye as a second component; according to this method images can be obtained both by positive working and negative working techniques. Furthermore, images which are free from yellow light fogging can be obtained by use of a laser beam.
    Type: Grant
    Filed: July 7, 1980
    Date of Patent: October 26, 1982
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Yohnosuke Takahashi, Hiromichi Tachikawa, Fumiaki Shinozaki, Tomoaki Ikeda
  • Patent number: 4297436
    Abstract: A method for producing a multilayer printing plate comprising image-wise exposing and developing a light-sensitive printing plate material which comprises a support having an oleophilic surface having a hydrophilic metal layer thereon, the hydrophilic metal layer having thereon at least one silver halide emulsion layer either directly or on at least one subbing layer on the hydrophilic metal layer, to form a silver image resist image corresponding to the image-wise exposure by subjecting the printing plate material to a process including baking, removing the hydrophilic metal layer at non-resist image areas to uncover the oleophilic surface thereunder, and removing the resist image, or a method for producing a multilayer printing plate comprising image-wise exposing and developing a light-sensitive printing plate material which comprises a support having a hydrophilic surface having thereon at least one silver halide emulsion layer either directly or on at least one subbing layer on the hydrophilic surface to
    Type: Grant
    Filed: June 12, 1978
    Date of Patent: October 27, 1981
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Kikuo Kubotera, Masamichi Sato, Akira Kashiwabara, Kotaro Sato
  • Patent number: 4292384
    Abstract: A device for dry development of photoresists, etching of semiconductor devices, fabrication of photomasks and removal of photoresist materials is described. The device includes a reaction chamber, a means for evacuating the reaction chamber, a supply of and means for introducing one or more reactive gases to the reaction chamber, a controllable relatively low-voltage direct-current power supply to generate a gas plasma in the reaction chamber, planar electrodes to confine the plasma energy to specific target areas in the chamber, means for defining and controlling the temperature of targets to be processed in the chamber and means for modifying and controlling the temperature of the plasma generating gas. The device and the manner of using the same are described.
    Type: Grant
    Filed: July 10, 1979
    Date of Patent: September 29, 1981
    Assignee: Horizons Research Incorporated
    Inventors: Virgil E. Straughan, Eugene Wainer
  • Patent number: 4292395
    Abstract: A photosensitive image forming material comprising a tin sulfide image forming layer on a base and a photosensitive resin composition layer on said layer is disclosed. An image forming process using said material is also disclosed comprising imagewise exposing the same and then simultaneously developing the photosensitive resin composition layer and etching the exposed tin sulfide image forming layer. Alternatively, development and etching can be conducted as two separate steps.
    Type: Grant
    Filed: August 14, 1980
    Date of Patent: September 29, 1981
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Minoru Wada, Fumiaki Shinozaki, Yohnosuke Takahashi, Satoshi Yoshida, Tomoaki Ikeda
  • Patent number: 4287297
    Abstract: Disclosed is a liquid composition for treating photosensitive laminates having an alcohol-soluble polyamide layer, which comprises 12 to 70 parts by weight of an aromatic neutral salt, 0.01 to 10 parts by weight of an alkali, 1 to 15 parts by weight of an alcohol and 84 to 100 parts by weight of water.
    Type: Grant
    Filed: March 3, 1980
    Date of Patent: September 1, 1981
    Assignee: Daicel Chemical Industries Ltd.
    Inventors: Tetsuo Ishihara, Keizi Kubo
  • Patent number: 4268601
    Abstract: A photosensitive image forming material which comprises a transparent support having thereon, in order, a poly(vinyl alcohol) layer, an alcohol soluble polyamide layer and a photosensitive resin composition layer with at least one of the poly(vinyl alcohol) layer and the photosensitive resin composition layer containing a colorant therein; and an image forming method using the image-forming material. Such a layer structure ensures sufficiently layer good adhesion as well as strippability of the developed image on demand.
    Type: Grant
    Filed: July 17, 1978
    Date of Patent: May 19, 1981
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Tomizo Namiki, Fumiaki Shinozaki, Tomoaki Ikeda
  • Patent number: 4234625
    Abstract: A process of producing a material sensitive to an electromagnetic and corpuscular radiation involves successively depositing, onto a transparent substrate, a layer of a semiconductor, a barrier layer inert to the semiconductor layer and a layer of a metal capable of reacting with the semiconductor layer under the effect of the electromagnetic and corpuscular radiation with the formation of the reaction products. After deposition of the metal layer, there is performed annealing at a temperature equal to or exceeding the temperature of diffusion of the material of the barrier layer into the material of the layers adjacent thereto. The annealing is conducted for a period sufficient for a partial or a complete dissolution of the barrier layer.
    Type: Grant
    Filed: January 19, 1978
    Date of Patent: November 18, 1980
    Inventors: Vyacheslav V. Petrov, Andrei A. Krjuchin