Abstract: A process of producing a material sensitive to an electromagnetic and corpuscular radiation involves successively depositing, onto a transparent substrate, a layer of a semiconductor, a barrier layer inert to the semiconductor layer and a layer of a metal capable of reacting with the semiconductor layer under the effect of the electromagnetic and corpuscular radiation with the formation of the reaction products. After deposition of the metal layer, there is performed annealing at a temperature equal to or exceeding the temperature of diffusion of the material of the barrier layer into the material of the layers adjacent thereto. The annealing is conducted for a period sufficient for a partial or a complete dissolution of the barrier layer.