Abstract: The present application discloses a packaging structure and method of an MEMS pressure sensor. The packaging structure of the MEMS pressure sensor includes: a film, forming a sealing chamber with a base, during manufacturing the sealing chamber is internally equipped with a sensing medium and a pressure sensor chip, when the external pressure increases, the film bends towards an inner side of the sealing chamber to cause the sealing chamber to contract and transmit pressure to the pressure sensor chip through the sensing medium. The packaging structure of the present application can avoid the sensing chip from being damaged by excessive contraction of the sealing chamber due to pressure overload, and thus achieves overload protection.

Abstract: A microfluidic component for a sample separation apparatus includes a component body including ceramic and at least one microfluidic structure in the component body. The component body is manufactured by additive manufacturing, in particular by three-dimensional printing.

Abstract: An apparatus for treating a substrate includes a process chamber having a process space inside, a support unit that supports the substrate in the process space, a heating unit that is provided inside the support unit and that heats the substrate, an exhaust unit that evacuates the process space, and a gas supply unit that supplies a gas into the process space, and the gas supply unit supplies the gas at a temperature selected from a first temperature and a second temperature.

Abstract: A diffractive optical element is provided that includes a first resin layer having steps on one surface, a second resin layer integrated with the first resin layer in tight contact, and a high refractive index layer disposed between a wall surface of the first resin layer and a wall surface of the second resin layer, wherein the high refractive index layer has a refractive index higher than those of the first resin layer and of the second resin layer, and the high refractive index layer is formed continuously to extend beyond the boundary between the wall surface and the inclined surface adjacent thereto, and to partly overlap the inclined surface.

Abstract: A device includes a coater, a dispenser, and a treatment portion. The coater is to coat, layer-by-layer, a build material relative to a build pad to form a 3D object. The dispenser is to at least dispense a fluid including a first at least potentially electrically conductive material in at least some selected locations of an external surface of the 3D object. The treatment portion is to treat the 3D object to substantially increase electrically conductivity on the external surface of the 3D object at the at least some selected locations.

Abstract: A process of simply, cheaply, and reproducibly creating complex tissue models using screen printing and the tissue model prepared using the screen printing process. These models are amenable to high throughput screening. They will allow the study of components of disease progression and can be used for screening therapies.

Abstract: A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9×C1<C2<10×C1 relative to a ratio (C2=A2/B2) of a value (A2) representing an acid in flood exposure to a value (B2) representing a base in the flood exposure.

Abstract: A digital masking system includes a supporting structure for supporting a material, and a pattern imaging apparatus. The pattern imaging apparatus includes a light source device, multiple imaging devices that convert light from the light source device into a plurality of light beams each representing an image, and a combiner that combines the light beams into a single light beam which is projected toward a material.

Abstract: A method for etching a metal containing feature is provided. Using a pattern mask, layers of material are etched to expose a portion of a metal containing feature. At least a portion of the exposed metal containing feature is etched, and is replaced by the growth of a filler dielectric. The etched portion of the metal containing feature and the filler dielectric reduce the unwanted conductivity between adjacent metal containing features.

Abstract: A positive resist composition comprising a base polymer comprising recurring units having a carboxyl group whose hydrogen is substituted by a pyridine ring-containing tertiary hydrocarbyl group.

Abstract: A photo-mask and a semiconductor process are provided. The photo-mask includes a substrate and a non-printable pattern on the substrate. A pattern size of the non-printable pattern is smaller than a critical resolution of a lithography equipment using the photo-mask to perform a lithography process.

Abstract: The preset invention provides an imprint apparatus including a supplying unit including a plurality of orifices which discharge droplets of an imprint material, and configured to supply the imprint material onto a substrate via the plurality of the orifices, and a processing unit configured to perform processing to determine positions where the droplets of the imprint material are to be supplied on the substrate based on information, which indicates a relationship between an elapsed time since the supplying unit has supplied the imprint material on the substrate and a spread of the droplets of the imprint material on the substrate corresponding to the elapsed time, and a predicted time since the supplying unit has supplied the imprint material onto the substrate until a mold is brought into contact with imprint material.

Abstract: The disclosure provides a prebaking device and a prebaking system for display substrate. The prebaking device includes a top plate, a bottom plate, a first side plate, a second side plate, a third side plate defined opposite to the first side plate and a fourth side plate defined opposite to the second side plate, the top plate, the bottom plate, the first side plate, the second side plate, the third side plate and the fourth side plate form a chamber cooperatively, the first side plate is defined with a window, the second side plate is defined with an air inlet hole to connect an air supply pipe of a hot air system, the fourth side plate is defined with an air exhaust hole to connect an exhaust system, the inner surface of the top plate is defined with an anti-adhere film.

Abstract: Semiconductor MEMS pressure sensors that can produce a linear and large output signal when subject to a small pressure, without an increase to the front to back span error. One example can experience large deflections without causing catastrophic damage to the membrane. The pressure sensor can include a silicon layer having opposing surfaces, an etched pattern in of the surfaces of the silicon layer, and an etched cavity on the opposite surface of the silicon layer to form a membrane. The etched patterned can include a series of concentric stiffening ribs, an inverted boss, large depression areas next to the membrane edge and/or the boss, and piezoresistive strain concentrators. The ribs and depressions can be formed onto the silicon membrane by anisotropic or isotropic etch techniques. Piezoresistive devices can be diffused into the membrane in the regions near the strain concentrators to form a Wheatstone bridge or other measurement structure.

Abstract: A pattern-forming method includes forming a prepattern and including a first polymer is formed on a silicon-containing film on a substrate. An underlayer film including a second polymer is formed in recessed portions of the prepattern. A composition for directed self-assembled film formation including a third polymer is applied on the underlayer film and the prepattern. The first polymer includes a first structural unit. The second polymer includes: a molecular chain including the first structural unit and a second structural unit that differs from the first structural unit; and an end structure that bonds to one end of the molecular chain and includes at least one selected from the group consisting of an amino group, a hydroxy group and a carboxy group. The third polymer is a block copolymer including a block of the first structural unit and a block of the second structural unit.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate. The photoresist layer includes at least an acid labile group (ALG) and a thermo-base generator (TBG). The method further includes exposing a portion of the photoresist layer to a radiation and performing a baking process after the exposing of the portion of the photoresist layer. The TBG releases a base during the performing of the baking process, resulting in a chemical reaction between the ALG and the base. The method further includes removing an unexposed portion of the photoresist layer, resulting in a patterned photoresist layer.

Abstract: The present application can provide a block copolymer and a use thereof. The block copolymer of the present application can have excellent self-assembly properties or phase separation characteristics and excellent etching selectivity, and various other functions as required can be freely imparted thereto.

Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.

Abstract: A method for plating nickel onto a glass surface of a substrate by sequentially contacting the surface with a solution having an oxidizing agent, a solution containing a silane compound, a Pd/Sn solution, and a nickel ion-containing solution, thereby accomplishing an electroless nickel plating process.

Abstract: A non-ionic photoacid generator and a chemically amplified positive-type photoresist composition for a thick film including the non-ionic photoacid generator. The non-ionic photoacid generator may not only exhibit high solubility in a solvent of the photoresist composition, but may also exhibit chemical and thermal stability and high sensitivity. In particular, the non-ionic photoacid generator is decomposed by light to generate an acid, and at the same time, can exhibit a corrosion preventing effect on a metal substrate.

Abstract: A mask manufacturing method includes stacking a first antireflection layer on a first stacked body at a first film thickness so as to create a first transmissive type mask. In the first stacked body, a first semitransmissive layer, a first reflective layer, and a first transmissive substrate are stacked. The mask manufacturing method includes stacking a second antireflection layer on a second stacked body at a second film thickness so as to create a second transmissive type mask. In the second stacked body, a second semitransmissive layer, a second reflective layer, and a second transmissive substrate are stacked. The second film thickness is determined in accordance with a thermal expansion amount of the first mask.

Abstract: A method of forming a self-cleaning film system includes depositing a fluorinated material selected from the group consisting of fluorinated organic compounds, fluorinated inorganic compounds, and combinations thereof onto a substrate to form a first layer. The method includes removing a plurality of portions of the first layer to define a plurality of cavities in the first layer and form a plurality of projections that protrude from the substrate. The method includes depositing a photocatalytic material onto the plurality of projections and into the plurality of cavities to form a second layer comprising: a plurality of bonded portions disposed in the plurality of cavities and in contact with the substrate, and a non-bonded portion disposed on the plurality of projections and spaced apart from the substrate. The method also includes, after depositing the photocatalytic material, removing the non-bonded portion to thereby form the self-cleaning film system.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG). The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.

Abstract: An arrangement for determining four-dimensional properties of an interface of an object, including a light source includes: a unit for forming photonic jets, a unit for performing large field of view interferometric imaging of the interface and their combination, a unit for passing the light being close to the interface and direct the light to the interface, and an image unit. The arrangement includes a unit for performing phase shifting interferometric imaging of the interface, imaging a unit for receiving light from the interface modulated by e.g. microspheres for forming super-resolution image information by combining light interferometry with the photonic jets, and a processor unit for determining four-dimensional properties of the interface on the basis of the image information formed by the phase shifting interferometric imaging by utilizing effect of the photonic jets. The arrangement also can also include a unit to carry out the measurement using polarized light.

Abstract: In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.

Abstract: The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is performed to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer.

Abstract: Patterning methods for creating features with sub-resolution dimensions that are self-aligned in photoresist materials. Techniques include selectably creating antispacers (or spacers) in soft materials, such as photoresist. A photoresist without a photo acid generator is deposited on a relief pattern of a solubility-neutralized photoresist material having a photo acid generator. A photomask then defines where photo acid is generated from a corresponding activating exposure. Photo acid is then diffused into the photoresist, that is free of the photo acid generator, to cause a solubility shift for subsequent development. These selectably-created antispacers can be line segments having widths defined by acid diffusion lengths, which can be widths of 1 nanometer to tens of nanometers. Moreover, the creation of antispacers, their location, and length, can be controlled using a photomask.

Abstract: A method of forming a self-cleaning film system includes depositing a perfluorocarbon siloxane polymer onto a substrate to form a first layer. The method includes removing a plurality of portions of the first layer to define a plurality of cavities in the first layer and form a plurality of projections that protrude from the substrate. The method includes depositing a photocatalytic material onto the plurality of projections and into the plurality of cavities to form a second layer comprising: a bonded portion disposed in the plurality of cavities and in contact with the substrate, and a non-bonded portion disposed on the plurality of projections and spaced apart from the substrate. The method also includes, after depositing the photocatalytic material, removing the non-bonded portion to thereby form the self-cleaning film system.

Abstract: A photoresist layer is formed over a patternable layer. The photoresist layer containing a negative tone photoresist material. An exposure process is performed to the photoresist layer. A post-exposure bake (PEB) process is performed to the photoresist layer. The photoresist layer is rinsed to develop a photoresist pattern. A primer material is applied to the photoresist pattern. The primer material is configured to: straighten a profile of the photoresist pattern, or to increase a number of deprotected acid labile group (ALG) units of the photoresist material, or to bond with the deprotected ALG units of the photoresist material. After the primer material is applied, the photoresist pattern is enlarged by coating a shrink material over the photoresist pattern, baking the shrink material, and removing portions of the shrink material. The patternable layer is patterned using the enlarged photoresist pattern as a mask.

Abstract: Identity document comprising a data medium with data. These data comprise an image of a face. This image consists of two component images that are observed at different angles. By simultaneously viewing the two images, the person studying the identity document can obtain further information about the face. This is possible because the two images are applied at a relatively small angle of 5° to 20°.

Abstract: Provided are photolithographic methods.

Abstract: A substrate to be inspected includes a first pattern constructed with a repetitive pattern that is not resolved by a wavelength of a light source, and at least one alignment mark that is arranged on the same plane as the first pattern. The alignment mark includes a second pattern constructed with a repetitive pattern that is not resolved by the wavelength of the light source, and a programmed defect that is provided in the second pattern and not resolved by the wavelength of the light source. A focus offset is adjusted such that the strongest signal of the programmed defect is obtained with respect to a base value of a gradation value in an optical image of the programmed defect by capturing the optical image while changing a focal distance between the surface in which the first pattern is provided and an optical system.

Abstract: A tool and a method of developing are provided. In various embodiments, the method of developing includes rotating a wafer at a first rotating speed. The method further includes dispensing a developer solution onto the wafer at the first rotating speed by a first nozzle above the wafer, wherein the first nozzle moves back and forth along a path during dispensing the developer solution. The method further includes rotating the wafer at a second rotating speed to spread the developer solution onto the wafer uniformly. The method further includes dispensing a rinse solution onto the wafer at the second rotating speed by a second nozzle above the wafer.

Abstract: Provided are method for manufacturing a color filter substrate, color filter substrate and display device. The method includes the following steps: providing a substrate; forming a color pixel unit on the substrate; forming a protective layer on the color pixel unit; coating an alignment film paint and a spacer paint on the protective layer in turn, and forming an alignment film and a spacer via a single patterning process or double patterning processes.

Abstract: Fabrication of a circuit structure is facilitated, in which a first exposure of a multi-layer structure is performed using a first mask, which defines positioning of at least one edge of an element to be formed above a substrate of the multi-layer structure. A second exposure of the multi-layer structure is performed using a second mask, which defines positioning of at least one other edge of the element. At least some material of the multi-layer structure is removed using, at least in part, the defined positioning of the at least one edge and the at least one other edges of the element, to form the element above the substrate. In some examples, multiple elements are formed, the multiple elements being hardmask elements to facilitate an etch process to etch a substrate material.

Abstract: The invention relates to a method for manufacturing an apparatus for the processing of single molecules. According to this method, a self-assembling resist (155) is deposited on a processing layer (110, PL) and allowed to self-assemble into a pattern of two phases (155a, 155b). One of these phases (155a) is then selectively removed, and at least one aperture is generated in the processing layer (110, PL) through the mask of the remaining resist (155b). Thus apertures of small size can readily be produced that allow for the processing of single molecules (M), for example in DNA sequencing.

Abstract: Spacers are formed by pitch multiplication and a layer of negative photoresist is deposited on and over the spacers to form additional mask features. The deposited negative photoresist layer is patterned, thereby removing photoresist from between the spacers in some areas. During patterning, it is not necessary to direct light to the areas where negative photoresist removal is desired, and the clean removal of the negative photoresist from between the spacers is facilitated. The pattern defined by the spacers and the patterned negative photoresist is transferred to one or more underlying masking layers before being transferred to a substrate.

Abstract: A conductive metal pattern can be formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40, and which is electrolessly plated with a conductive metal.

Abstract: A method of forming patterns of a semiconductor device includes forming a material film on a substrate, forming a hard mask on the material film, forming a first mold mask pattern and a second mold mask pattern on the hard mask, forming a pair of first spacers to cover opposite sidewalls of the first mold mask pattern, and a pair of second spacers to cover opposite sidewalls of the second mold mask pattern, forming a first gap and a second gap to expose the hard mask by removing the first mold mask pattern and the second mold mask pattern, the first gap being formed between the pair of first spacers and the second gap being formed between the pair of second spacers, forming a mask pattern on the hard mask to cover the first gap and expose the second gap, forming an auxiliary pattern to cover the second gap, removing the mask pattern; and forming a hard mask pattern by patterning the hard mask using the first spacers, the second spacers and the auxiliary pattern as a mask.

Abstract: A process for metallizing nanomaterial including subjecting nanomaterial in a metallizing solution to microwave radiation; nanomaterial made by such a process; and density gradient separation of such material. This abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure and is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims, 37 C.F.R. 1.72(b).

Abstract: In accordance with an embodiment, a method of forming a pattern includes forming a first layer on a fabrication target film, making a mold and the first layer push each other to form a protrusion on the fabrication target film, and forming first and second regions, forming a block copolymer layer including first and second blocks in the first and second regions, phase-separating the block copolymer layer, forming second and third layers in the first region, and forming fourth and fifth layers in the second region; and removing the third and fifth layers. The first region is surrounded by the first layer and the protrusion. The second region is surrounded by the first layer and contacts the first region via the protrusion. The third layer is surrounded by the second layer. The fifth layer is surrounded by the fourth layer.

Abstract: A method for making conductive wires is provided. Firstly, an ink having carbon nanotubes is provided. Secondly, a baseline is formed using the ink on a substrate. Thirdly, the baseline is electroless plated.

Abstract: Crosslinkable reactive polymers comprise -A- and —B— recurring units, arranged randomly along a backbone. The -A- recurring units comprise pendant aromatic sulfonic acid oxime ester groups that are capable of providing pendant aromatic sulfonic acid groups upon irradiation with radiation having a ?max of at least 150 nm and up to and including 450 nm. The -A- recurring units are present in the reactive polymer in an amount of greater than 50 mol % and up to and including 98 mol % based on total reactive polymer recurring units. The —B— recurring units comprise pendant groups that provide crosslinking upon generation of the aromatic sulfonic acid groups in the -A- recurring units. The —B— recurring units are present in an amount of at least 2 mol %, based on total reactive polymer recurring units. These reactive polymers can be used in various pattern-forming methods.

Abstract: Contrast enhancing exposure apparatus and method for use in semiconductor fabrication are described. In one embodiment, a method for forming a pattern on a substrate, wherein the substrate includes a photoresist layer comprising photoacid generators (“PAGs”) and photobase generators (“PBGs”), is described.

Abstract: A method of treating a laser-activated thermoplastic substrate having a metal compound dispersed therein is described. The substrate is contacted with an aqueous composition comprising: (i) a thiol functional organic compound; (ii) an ethoxylated alcohol surfactant; and (iii) xanthan gum. By use of the treatment composition, when the substrate is subsequently laser-activated and plated by electroless plating, extraneous plating of the substrate is substantially eliminated.

Abstract: A conductive metal pattern is formed in a polymeric layer that has a polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to form non-exposed regions and exposed regions, which are contacted with a reducing agent to incorporate reducing agent therein. These exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent to form corresponding electroless seed metal nuclei that can be then electrolessly plated with a conductive metal.

Abstract: A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer.

Abstract: A conductive metal pattern is formed using a reactive polymer that can provide pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of providing crosslinking. The polymeric layer is patternwise exposed to radiation to provide first exposed regions that are then contacted with electroless seed metal ions to form a pattern of electroless seed metal ions, followed by contact with a halide. At least some of the electroless seed metal halide can be exposed to form second exposed regions. The polymeric layer can be contacted with a reducing agent either: (i) to develop the electroless seed metal image in the second exposed regions, or (ii) to develop all of the electroless seed metal halide in the first exposed regions, and optionally contacted with a fixing agent. The electroless seed metal nuclei in the first exposed regions can be electrolessly plated with a conductive metal.

Abstract: A conductive metal pattern is formed using a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide de-blocking and crosslinking in the reactive polymer. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The polymeric layer is contacted with a reducing agent, followed by bleaching to remove surface amounts of the reducing agent in both non-exposed regions and exposed regions. The exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent and to form a pattern of corresponding electroless seed metal nuclei in the exposed regions. The corresponding electroless seed metal nuclei are then electrolessly plated with a conductive metal.

Abstract: A conductive metal pattern can be formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40, and which is electrolessly plated with a conductive metal.