Including Material Deposition Patents (Class 430/324)
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Publication number: 20110229829Abstract: An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.Type: ApplicationFiled: May 19, 2011Publication date: September 22, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Ching-Yu Chang
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Publication number: 20110223544Abstract: A resist pattern coating agent includes a hydroxyl group-containing resin and a solvent. The solvent includes an alcohol shown by a following formula (1) in an amount of about 30 mass % or more, R—OH??(1) wherein R represents a branched alkyl group having 3 to 10 carbon atoms. The resist pattern coating agent is used in a resist pattern-forming method. The method includes forming a first resist pattern on a substrate using a first radiation-sensitive resin composition. The first resist pattern is treated with the resist pattern coating agent. A second resist pattern is formed on the substrate treated with the resist pattern coating agent using a second radiation-sensitive resin composition.Type: ApplicationFiled: April 19, 2011Publication date: September 15, 2011Applicant: JSR CorporationInventors: Yuji YADA, Yusuke Anno, Tomohiro Kakizawa, Masafumi Hori, Michihiro Mita, Goji Wakamatsu
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Patent number: 8017309Abstract: A method of manufacturing a wiring circuit board includes: preparing an insulating layer; forming conductive thin films on the upper surface and the side end surface of the insulating layer; covering the conductive thin films formed on the upper surface and the side end surface of the insulating layer with photoresists; arranging a photomask so that an end portion and a portion to be provided with a conductive layer in the conductive thin film formed on the upper surface of the insulating layer are shaded and exposing the photoresist covering the conductive thin film formed on the upper surface of the insulating layer from above through the photomask; exposing the photoresist covering the conductive thin film formed on the side end surface of the insulating layer from below; forming plating resists by removing unexposed portions of the photoresists so as to form exposed portions into patterns; forming an end portion conductive layer on the end portion of the conductive thin film formed on the upper surface ofType: GrantFiled: April 10, 2009Date of Patent: September 13, 2011Assignee: Nitto Denko CorporationInventor: Keiji Takemura
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Patent number: 8017310Abstract: A method of providing a pattern on a substrate is disclosed. The method includes providing a layer of photoresist on the substrate, providing a layer of top coating over the layer of photoresist, lithographically exposing the photoresist layer and developing the photoresist to form a structure, covering the structure with a coating layer, inducing a chemical reaction between the photoresist and the coating layer, which reaction does not occur in the top coating, to form regions of modified coating layer, and removing unmodified coating layer to leave behind a patterned structure formed from the regions of modified coating layer.Type: GrantFiled: February 2, 2007Date of Patent: September 13, 2011Assignee: ASML Netherlands B.V.Inventors: Richard Franciscus Johannes Van Haren, Ewoud Vreugdenhil
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Patent number: 8003310Abstract: A template comprising pitch multiplied and non-pitch multiplied features is configured for use in imprint lithography. On a first substrate, a first pattern is formed using pitch multiplication and a second pattern is formed using photolithography without pitch multiplication. The first pattern and the second pattern are transferred to a template. The template is brought into contact with a transfer layer overlying a series of mask layers overlying a second substrate. The pitch multiplied and non-pitch multiplied patterns on the template are transferred to the transfer layer, forming an imprinted pattern. The imprinted pattern is transferred to the second substrate to form pitch multiplied and non-pitch multiplied features.Type: GrantFiled: April 24, 2006Date of Patent: August 23, 2011Assignee: Micron Technology, Inc.Inventors: Gurtej S. Sandhu, Ardavan Niroomand
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Patent number: 8003537Abstract: A method for the production of a planar structure is disclosed. The method comprises producing on a substrate a plurality of structures of substantially equal height, and there being a space in between the plurality of structures. The method further comprises providing a fill layer of electromagnetic radiation curable material substantially filling the space between the structures. The method further comprises illuminating a portion of the fill layer with electromagnetic radiation, hereby producing a exposed portion and an unexposed portion, the portions being separated by an interface substantially parallel with the first main surface of the substrate. The method further comprises removing the portion above the interface.Type: GrantFiled: July 18, 2007Date of Patent: August 23, 2011Assignees: IMEC, Katholieke Universiteit LeuvenInventors: Xavier Rottenberg, Phillip Ekkels, Hendrikus Tilmans, Walter De Raedt
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Publication number: 20110200938Abstract: A novel antireflective coating composition is provided, said antireflective coating composition comprising a) a compound of formula 1, b) a thermal acid generator, (c) at least one polymer, wherein U1 and U2 are independently a C1-C10 alkylene group; V is selected from a C1-C10 alkylene, arylene and aromatic alkylene; W is selected from H, C1-C10 alkyl, aryl, alkylaryl and V—OH; Y is selected from H, W, and U3C(O)OW, wherein U3 is independently a C1-C10 alkylene group, and m is 1 to 10. Also provided are methods using said compositions as antireflective coatings for substrates in lithographic processes.Type: ApplicationFiled: February 18, 2010Publication date: August 18, 2011Inventors: Huirong Yao, Guanyang Lin, Jianhui Shan, Joon Yeon Cho, Salem K. Mullen
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Patent number: 7998662Abstract: A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.Type: GrantFiled: May 27, 2009Date of Patent: August 16, 2011Assignee: Dai Nippon Printing Co., Ltd.Inventors: Hironori Kobayashi, Manabu Yamamoto, Daigo Aoki, Hironori Kamiyama, Shinichi Hikosaka, Mitsuhiro Kashiwabara
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Patent number: 7998658Abstract: A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.Type: GrantFiled: April 26, 2010Date of Patent: August 16, 2011Assignee: Panasonic CorporationInventors: Masayuki Endou, Masaru Sasago
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Patent number: 7993814Abstract: A method for forming patterns using a single mask includes: disposing a photo mask having a defined pattern, and performing an exposure process by controlling the focal length of an exposure apparatus to a focusing position to form a pattern having the same shape as the photo mask on the wafer; and using the same photo mask, and performing the exposure process by controlling the focal length of the exposure apparatus to a defocusing position to form a reverse pattern having a reversed image with respect to the pattern on the wafer.Type: GrantFiled: June 29, 2007Date of Patent: August 9, 2011Assignee: Hynix Semiconductor Inc.Inventor: Hyun Jo Yang
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Publication number: 20110189719Abstract: The present invention provides methods of generating and devices of patterned soft substrates, on which cells may be seeded, as well as methods of using these substrates. Devices containing these patterned soft substrates are also provided.Type: ApplicationFiled: May 22, 2009Publication date: August 4, 2011Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Po-Ling Kuo, Adam W. Feinberg, Kevin Kit Parker
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Publication number: 20110183272Abstract: In one example embodiment, a method fabricates microbeads, which can supply a bead set containing a various types of microbeads and having distinct populations of the respective types of microbeads. In one example embodiment, the method includes forming a hydrophilic layer made of a hydrophilic organic material on a substrate. In one example embodiment, the method includes laminating on the hydrophilic layer a thin film capable of being peeled off in the form of microbeads. In one example embodiment, the method includes forming the thin film in a given configuration by photolithography. In one example embodiment, the method includes solid-phasing a given substance on the post-formed thin films. In one example embodiment, the method includes peeling off the post-formed thin films, which have been solid-phased with the substance, from the substrate along with at least a part of the hydrophilic layer to obtain microbeads.Type: ApplicationFiled: September 4, 2009Publication date: July 28, 2011Applicant: SONY CORPORATIONInventors: Mari Ichimura, Kenzo Machida, Noriyuki Kishii, Masannobu Tanaka
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Publication number: 20110183268Abstract: There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a reactive surface-active composition to form a treated first layer having a second surface energy which is lower than the first surface energy; exposing the treated first layer with radiation; and forming the second layer. There is also provided an organic electronic device made by the process.Type: ApplicationFiled: April 5, 2011Publication date: July 28, 2011Applicant: E. I. DU PONT DE NEMOURS AND COMPANY DUPONT DISPLAYS INCInventors: Charles D. Lang, Stephen Sorich, Charles Kenneth Taylor, Douglas Robert Anton, Alberto Goenaga, Paul Anthony Sant
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Publication number: 20110177460Abstract: The present invention is directed to a process for producing an image on a substrate and a substrate having an image deposited thereon using the aforementioned processes.Type: ApplicationFiled: June 9, 2009Publication date: July 21, 2011Applicant: NANOFILM TECHNOLOGIES INTERNATIONAL PTE LTDInventor: Xu Shi
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Publication number: 20110165389Abstract: The present invention is a method for forming a patterned electroconductive layer containing an electroconductive polymer on a surface of a base body and is characterized in that a positive type photoresist composition containing a naphthoquinone diazide and a novolak resin is used, and that a developer containing a potassium ion at a concentration of 0.08 mol/l to 0.20 mol/l, and a coexistent sodium ion at a concentration of less than 0.1 mol/l is used for development of a resist film obtained by the positive type photoresist composition.Type: ApplicationFiled: July 23, 2009Publication date: July 7, 2011Applicants: TOAGOSEI CO., LTD., TSURUMI SODA CO., LTD.Inventor: Hiromu Taguchi
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Publication number: 20110159252Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.Type: ApplicationFiled: May 21, 2009Publication date: June 30, 2011Inventors: Christopher K. Ober, George Malliaras, Jin-Kyun Lee, Alexander Zakhidov, Margarita Chatzichristidi, Priscilla Taylor
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Publication number: 20110155855Abstract: The invention relates to a method for making an acoustic panel (12) for an air intake lip (2) of a nacelle (1) that includes the steps of obtaining a perforated de-icing assembly (14) including at least one array of conducting members obtained by a photolithographic method, said de-icing member (14) being secured to a structure with a cellular web (13). The invention also relates to an air intake lip and to a nacelle.Type: ApplicationFiled: August 14, 2009Publication date: June 30, 2011Applicant: AIRCELLEInventor: Pierre Caruel
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Publication number: 20110159411Abstract: A phase shift photomask blank has a quartz substrate, a lower chrome layer, a light-absorbing MoSi layer, and an upper chrome layer. This mask can be patterned in various ways to form a patterned photomask with both phase shift and binary areas.Type: ApplicationFiled: December 30, 2009Publication date: June 30, 2011Inventors: Bennett Olson, Max Lau, Cheng-hsin Ma, Jian Ma, Andrew T. Jamieson
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Patent number: 7971160Abstract: A method for creating a pattern on a photomask includes steps of recognizing a space between main patterns by using pattern data which indicate the main patterns to be adjacently transferred onto a wafer, determining a 1st rule about arrangement of an assist pattern on the photomask, the assist pattern being adjacent to the main patterns and not being transferred onto the wafer, estimating a depth of focus in the presence of the assist pattern among the main patterns, determining a 2nd rule about arrangement of the assist pattern on the photomask to improve the depth of focus in the presence of the 1st assist pattern among the main patterns in a group having one or more number of appearance times of the space between main patterns, and correcting the assist pattern on the photomask using the assist pattern data on the basis of the 2nd rule.Type: GrantFiled: January 22, 2008Date of Patent: June 28, 2011Assignee: Fujitsu Semiconductor LimitedInventors: Morimi Osawa, Takayoshi Minami, Satoru Asai
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Publication number: 20110151190Abstract: An advanced high-resolution and high-throughput shadow edge (116) lithography (SEL) method is disclosed for forming uniform zero- one- and two-dimensional nanostructures on a substrate. The method entails high-vacuum oblique vapor deposition and a compensated shadow effect of a pre-patterned layer (100). A method of compensating for cross-substrate variation is also disclosed. The compensation approach enables routine, low-cost fabrication of uniform nanoscale features, or nanogaps (110) on the order of 10 nm±1 nm, that can be used to etch nanowells (196) or to form nanostructures such as nanowires (169), using a selective metal lift-off process. A wafer-scale analytical model is proposed for predicting the width of nanogaps (110) fabricated by the shadow effect on pre-patterned edges. By combining compensation and pattern reversal techniques with multiple shadow patterning, two-dimensional structures such as crossing nanowires may be generated.Type: ApplicationFiled: May 8, 2008Publication date: June 23, 2011Inventors: Jae-Hyun Chung, Guofeng Bai, Woon-Hong Yeo
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Publication number: 20110128522Abstract: To provide a manufacturing method for a patterned member, by which a dotted pattern can be readily formed without deforming the shape of pits. There is provided a method for manufacturing a patterned member on which a dotted pattern is formed. This manufacturing method comprises: a preparation step of preparing a substrate having a photoresist layer which undergoes a change in shape when it is illuminated and hence heated with an electromagnetic beam; and an exposure step of illuminating and scanning the photoresist layer with the electromagnetic beam to remove a part of the photoresist layer, wherein in the exposure step, an emission time of the electromagnetic beam is adjusted to fall within 10-40% of a scanning time corresponding to a pitch of a plurality of pits formed on the photoresist layer in a scanning direction.Type: ApplicationFiled: June 4, 2009Publication date: June 2, 2011Applicant: FUJIFILM CORPORATIONInventor: Yoshihisa Usami
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Publication number: 20110129634Abstract: There are provided a patterned member which has densely arranged pits on the surface and which is easily manufactured, and a method for manufacturing such a patterned member. A patterned member includes a substrate 10, a thermally deformable heat mode photoresist layer 20 provided on the substrate 10, pits 21 formed on the photoresist layer 20. The pits 21 are arranged in line along a plurality of tracks which are substantially parallel to one another, and as viewed in a direction along which the tracks Tn extend, each pit 21 on one track is positioned at a position corresponding to a midpoint between two adjacent pits arranged on an adjacent track.Type: ApplicationFiled: June 3, 2009Publication date: June 2, 2011Applicant: FUJIFILM CORPORATIONInventor: Yoshihisa Usami
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Publication number: 20110128536Abstract: Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.Type: ApplicationFiled: December 1, 2010Publication date: June 2, 2011Inventors: Tiziana C. BOND, Robin Miles, James C. Davidson, Gang Logan Liu
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Publication number: 20110123936Abstract: A resist pattern coating agent includes a hydroxyl group-containing resin, a solvent, and at least two compounds including at least two groups shown by a following formula (1), compounds including a group shown by a following formula (2), and compounds including a group shown by a following formula (4).Type: ApplicationFiled: February 7, 2011Publication date: May 26, 2011Applicant: JSR CorporationInventors: Masafumi HORI, Michihiro Mita, Kouichi Fujiwara, Katsuhiko Hieda, Yoshikazu Yamaguchi, Tomohiro Kakizawa
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Publication number: 20110117501Abstract: A resist underlayer polymer, a resist underlayer composition including the same, and a method of patterning using the same, the resist underlayer polymer including a repeating unit represented by at least one of Chemical Formula 1 and Chemical Formula 2:Type: ApplicationFiled: September 21, 2010Publication date: May 19, 2011Inventors: Jee Yun SONG, Hwan-Sung Cheon, Sung-Wook Cho, Kyong-Ho Yoon, Min-Soo Kim, Seung-Bae Oh
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Patent number: 7943289Abstract: The invention provides systems and processes that form the inverse (photographic negative) of a patterned first coating. The patterned first coating is usually provided by a resist. After the first coating is patterned, a coating of a second material is provided thereover. The uppermost layer of the second coating is removed, where appropriate, to expose the patterned first coating. The patterned first coating is subsequently removed, leaving the second coating material in the form of a pattern that is the inverse pattern of the first coating pattern. The process may be repeated with a third coating material to reproduce the pattern of the first coating in a different material. Prior to applying the second coating, the patterned first coating may be trimmed by etching, thereby reducing the feature size and producing sublithographic features. In addition to providing sublithographic features, the invention gives a simple, efficient, and high fidelity method of obtaining inverse coating patterns.Type: GrantFiled: March 22, 2005Date of Patent: May 17, 2011Assignee: GLOBALFOUNDRIES Inc.Inventors: Bharath Rangarajan, Michael K. Templeton, Ramkumar Subramanian
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Publication number: 20110111349Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.Type: ApplicationFiled: January 12, 2011Publication date: May 12, 2011Applicant: JSR CorporationInventors: Gouji WAKAMATSU, Masafumi Hori, Kouichi Fujiwara, Makoto Sugiura
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Publication number: 20110111345Abstract: Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.Type: ApplicationFiled: November 6, 2009Publication date: May 12, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert D. Allen, Phillip J. Brock, Kuang-Jung Chen, Alexander Friz, Wu-Song Huang, Ratnam Sooriyakumaran, Sally A. Swanson, Hoa D. Truong
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Publication number: 20110104454Abstract: The present invention provide a composition for forming a layer to be plated, including a solution in which from 1% by mass to 20% by mass of a polymer having a functional group that forms an interaction with a plating catalyst or a precursor thereof and a radical polymerizable group, and a water-insoluble photopolymerization initiator are dissolved in a mixed solvent comprising from 20% by mass to 99% by mass of a water-soluble flammable liquid and water; a method of producing a metal pattern material using the composition for forming a layer to be plated; and a metal pattern material produced by the method.Type: ApplicationFiled: October 25, 2010Publication date: May 5, 2011Applicant: FUJIFILM CORPORATIONInventors: Takatsugu KAWANO, Takeyoshi KANO
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Patent number: 7935464Abstract: A system and a method for self-aligned dual patterning are described. The system includes a platform for supporting a plurality of process chambers. An etch process chamber coupled to the platform. An ultra-violet radiation photo-resist curing process chamber is also coupled to the platform.Type: GrantFiled: October 30, 2008Date of Patent: May 3, 2011Assignee: Applied Materials, Inc.Inventor: Christopher Siu Wing Ngai
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Patent number: 7932016Abstract: Photoresist compositions and methods suitable for depositing a thick photoresist layer in a single coating application are provided. Such photoresist layers are particularly suitable for use in chip scale packaging, for example, in the formation of metal bumps.Type: GrantFiled: November 8, 2006Date of Patent: April 26, 2011Assignee: Rohm and Haas Electronic Materials LLCInventors: Mark R. Winkle, Jill E. Steeper, Xiang-Qian Liu, Janet Okada-Coakley, Scott A. Ibbitson
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Publication number: 20110091811Abstract: A patternable adhesive film is formed in a double-layered structure of an adhesive layer having patternability and an adhesive layer having both adhesion and developability. Thus, the double-layered patternable adhesive film can effectively have both patternability and adhesion.Type: ApplicationFiled: April 9, 2010Publication date: April 21, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun Jin SONG, Chul Ho JEONG, Yong Seok HAN, Yi Yeol LYU
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Publication number: 20110091818Abstract: The present invention provides a process for producing a photoresist pattern comprising the following steps (1) to (11): (1) a step of applying the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, and an acid generator, on a substrate followed by conducting drying, thereby forming the first photoresist film, (2) a step of prebaking the first photoresist film, (3) a step of exposing the prebaked first photoresist film to radiation, (4) a step of baking the exposed first photoresist film, (5) a step of developing the baked first photoresist film with the first alkaline developer, thereby forming the first photoresist pattern, (6) a step of forming a coating layer on the first photoresist pattern, (7) a step of applying the second photoresist composition on the coating layer followed byType: ApplicationFiled: October 18, 2010Publication date: April 21, 2011Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Mitsuhiro HATA, Kazuhiko Hashimoto
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Publication number: 20110088929Abstract: Disclosed is a metal structure of a multi-layer substrate, comprising a first metal layer and a dielectric layer. The first metal layer has an embedded base and a main body positioned on the embedded base. The base area of the embedded base is larger than the base area of the main body. After the dielectric layer covers the main body and the embedded base, the dielectric layer is opened at the specific position of the first metal layer for connecting the first metal layer with a second metal layer above the dielectric layer. When the metal structure is employed as a pad or a metal line of the flexible multi-layer substrate according to the present invention, the metal structure cannot easily be delaminated or separated from the contacted dielectric layer. Therefore, a higher reliability for the flexible multi-layer substrate can be achieved.Type: ApplicationFiled: July 4, 2010Publication date: April 21, 2011Applicant: PRINCO CORP.Inventor: CHIH-KUANG YANG
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Publication number: 20110091819Abstract: In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern.Type: ApplicationFiled: December 28, 2010Publication date: April 21, 2011Applicant: RENESAS ELECTRONICS CORPORATIONInventor: Takuya Hagiwara
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Publication number: 20110083887Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.Type: ApplicationFiled: October 8, 2009Publication date: April 14, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert Dennis Miller, Alshakim Nelson, Jitendra Singh Rathore, Ratnam Sooriyakumaran
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Publication number: 20110086314Abstract: A light-attenuating composition and method of using it are described. The light-attenuating composition may be selectively applied to a radiant energy sensitive material on the substrate. Actinic radiation applied to the composite chemically changes portions of the radiant energy sensitive material not covered by the light-attenuating composition. The light-attenuating composition attenuates light in at least the UV range and is water-soluble or water-dispersible.Type: ApplicationFiled: December 17, 2010Publication date: April 14, 2011Applicant: Rohm and Haas Electronic Material LLCInventors: Edgardo ANZURES, Robert K. Barr
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Patent number: 7923175Abstract: A photomask structure is described, including a substrate having multiple half-tone phase shift patterns on a device region and multiple opaque patterns on a die seal ring region. By using the photomask, a side lobe effect does not occur to the photoresist layer corresponding to the die seal ring region in the exposure step.Type: GrantFiled: February 10, 2006Date of Patent: April 12, 2011Assignee: MACRONIX International Co. Ltd.Inventors: Chun-Chung Huang, Chin-Cheng Yang
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Patent number: 7923202Abstract: A structure and a method for forming the same. The method includes providing a structure which includes (a) a to-be-patterned layer, (b) a photoresist layer on top of the to-be-patterned layer wherein the photoresist layer includes a first opening, and (c) a cap region on side walls of the first opening. A first top surface of the to-be-patterned layer is exposed to a surrounding ambient through the first opening. The method further includes performing a first lithography process resulting in a second opening in the photoresist layer. The second opening is different from the first opening. A second top surface of the to-be-patterned layer is exposed to a surrounding ambient through the second opening.Type: GrantFiled: July 31, 2007Date of Patent: April 12, 2011Assignee: International Business Machines CorporationInventors: Toshiharu Furukawa, Mark Charles Hakey, Steven John Holmes, David Vaclav Horak, Charles William Koburger, III
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Publication number: 20110070542Abstract: A method and material layer for forming a pattern are disclosed.Type: ApplicationFiled: September 18, 2009Publication date: March 24, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Wei Wang, Ching-Yu Chang, Burn Jeng Lin
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Patent number: 7906275Abstract: In accordance with the invention, there are methods for self-aligned spatial frequency doubling in one dimension and also in two dimension. The method for self-aligned spatial frequency doubling in one dimension can include forming a film stack over a substrate, wherein the film stack comprises a photoresist layer and forming a one-dimensional periodic first pattern having a first pitch p on the photoresist layer using an optical exposure, wherein the first pitch p is at least smaller than twice the bandpass limit for optical exposures. The method can also include forming a second pattern using the first pattern by nonlinear processing steps, wherein the second pattern has a second pitch p2=p/2.Type: GrantFiled: August 31, 2007Date of Patent: March 15, 2011Assignee: STC.UNMInventors: Steven R. J. Brueck, Andrew Frauenglass, Alexander K. Raub, Dong Li
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Publication number: 20110048787Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.Type: ApplicationFiled: August 31, 2009Publication date: March 3, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert David Allen, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert Dennis Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Publication number: 20110045249Abstract: The present invention aims to provide a sliding component of high wear resistance having a lubricating oil retaining structure and a structure helping to supply a lubricating oil regardless of the contact angle between itself and the mating component. There is provided a precision machinery component having at least three layers stacked together, characterized in that a portion substantially parallel to the stacking direction has a sliding portion coming into contact with another component, and that at least a part of the sliding portion has a recess.Type: ApplicationFiled: February 18, 2009Publication date: February 24, 2011Inventors: Miei Sato, Natsuki Miyoshi, Matsuo Kishi, Naoki Amano, Takashi Niwa
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Publication number: 20110039061Abstract: Methods of directing assembly of materials using a surface-modified substrate are disclosed. A modified surface is created on a substrate by applying a first surface agent to the substrate. Energy is applied to the modified surface to form an imaged surface having an imaged portion and a non-imaged portion. The imaged portion is characterized by a surface energy that is different from the surface energy of the non-imaged portion. For example, the applied energy can remove at least a portion of an attached surface agent from the imaged portion to modify the surface energy. In some preferred embodiments the energy also modifies the surface agent without causing oxidation. To avoid oxidation, for example, the surface modification and/or energy appliement can take place in a low oxygen environment (e.g., having an oxygen content lower than that present in about 0.01 Torr of air).Type: ApplicationFiled: February 17, 2010Publication date: February 17, 2011Applicant: Massachusetts Institute of TechnologyInventors: Theodore H. Fedynyshyn, Richard Kingsborough
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Patent number: 7879534Abstract: The present invention relates to a method of manufacturing a detection device which involves providing a substrate having a layer of electrically conductive material and a first layer of photosensitive material. Next, the substrate is subjected to a first level photolithography treatment to produce an electrical conductor containing conductive fingers with spaces between them. Finally, biological probes are attached to the conductive fingers under conditions effective to form a gap between the biological probes on the spaced apart conductive fingers, whereby a target molecule, if present in a sample, can bind to a pair of the biological probes on the spaced apart conductive fingers to bridge the gap between the biological probes, allowing detection of the target molecule.Type: GrantFiled: November 19, 2002Date of Patent: February 1, 2011Assignee: Integrated Nano-Technologies LLCInventors: Hong-An Pham, Dennis M. Connolly
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Patent number: 7879510Abstract: A method for etching quartz is provided herein. In one embodiment, a method of etching quartz includes providing a filmstack in an etching chamber, the filmstack having a quartz layer partially exposed through a patterned layer, providing at least one fluorocarbon process gas to a processing chamber, biasing a quartz layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts and etching the quartz layer through a patterned mask. The method for etching quartz described herein is particularly suitable for fabricating photomasks having etched quartz portions.Type: GrantFiled: January 8, 2005Date of Patent: February 1, 2011Assignee: Applied Materials, Inc.Inventors: Scott Alan Anderson, Ajay Kumar
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Patent number: 7879536Abstract: Disclosed herein is a method for forming a pattern, comprising: attaching a single-layer or multi-layer dry film resist made of a semi-solid or solid material to part or all of the surface of a substrate; exposing the dry film resist to light either by irradiating a focusable energy beam directly onto the resist or by projecting a specific wavelength range of light onto the resist, to form a region to be filled with a functional material; charging the functional material into the formed region using a method such as inkjetting; drying the functional material; and removing the dry film resist, thus obtaining the desired pattern.Type: GrantFiled: December 19, 2006Date of Patent: February 1, 2011Assignee: Korea Institute of Machinery & MaterialsInventors: Dong-Youn Shin, Dong-Soo Kim, So-Nam Yun, Young-Bog Ham, Byung-Oh Choi
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Patent number: 7879535Abstract: The present invention provides a pattern forming method characterized in that energy is applied to a surface of a base material including a polyimide having a polymerization initiating moiety in a skeleton thereof to thereby generate an active site on the surface of the base material, and a polymer directly bonded to the base material surface and having at least a group selected from a group consisting of: a polar group; a functional group whose hydrophilicity/hydrophobicity changes, whose structure is changed into a structure that interacts with an electroless plating catalyst or a precursor thereof, or which ceases to interact with an electroless plating catalyst or a precursor thereof in response to heat, acid or radiation; and a polymerizable functional group, is generated in a pattern shape using the active site as a starting point so that a pattern is formed on the surface of the base material.Type: GrantFiled: March 28, 2005Date of Patent: February 1, 2011Assignee: FUJIFILM CorporationInventors: Takeyoshi Kano, Koichi Kawamura
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Publication number: 20110014576Abstract: A method for manufacturing a substrate structure includes providing a substrate, forming a plurality of banks on the substrate, the banks and the substrate cooperatively defining a plurality of accommodating rooms, dispensing ink into accommodating rooms in such a manner that the ink covers portions of the banks located between at least two adjacent accommodating rooms using a dispenser, and solidifying the ink in the accommodating rooms to form a patterned layer.Type: ApplicationFiled: September 27, 2010Publication date: January 20, 2011Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventors: CHING-YU CHOU, YU-NING WANG
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Publication number: 20110003256Abstract: A method for providing temporary measurement targets during a multiple patterning process which can be removed in the completion of the process. The metrology target is defined in either the first or the second exposure of a multiple exposure process and whether or not it is temporary or made permanent is selected according to whether or not the area of the target is covered or cleared out in the other exposure. The use of temporary targets reduces the amount of space on the substrate that must be devoted to targets.Type: ApplicationFiled: June 24, 2010Publication date: January 6, 2011Applicant: ASML Netherlands B.V.Inventors: Robertus Wilhelmus VAN DER HEIJDEN, Richard Johannes Franciscus Van Haren