Abstract: A photoconductor coupled liquid crystal light valve comprising a photoconductor layer, a liquid crystal layer and electrodes for applying voltage to the layers. The photoconductive layer is made of amorphous silicon containing hydrogen and/or halogen at more than 40 at%. The photoconductive layer preferably has a resistivity of between 10.sup.11 and 10.sup.12 ohm-cm and a photonconductivity of 10.sup.-8 and 10.sup.-6 cm.sup.2 /V. The photoconductive layer is preferably formed by electron cyclotron resonance.

Abstract: New inverse multiactive electrophotographic elements comprise, in order:an electrically conductive layer;a charge-transport layer;a first charge-generation layer containing a charge-generation material and a charge-transport material; anda second charge-generation layer containing a charge-generation material and a charge-transport material different from and less susceptible to positive-surface-charge injection than the charge-transport material of the first charge-generation layer.

Abstract: An electrophotographic light-sensitive material comprising a support having provided thereon a photoconductive layer containing at least an inorganic photoconductive substance and a binder resin, wherein the binder resin comprises (1) at least one graft type copolymer (Resin (A)) having a weight average molecular weight of from 1.times.10.sup.3 to 2.times.10.sup.4 and containing, as a copolymerizable component, at least one mono-functional macromonomer (M) comprising an AB block copolymer being composed of an A block comprising at least one polymerizable component containing at least one acidic group selected from --PO.sub.3 H.sub.2, --COOH, --SO.sub.

Abstract: An electrophotographic image-forming member which comprises a substrate for electrophotography and a light receiving layer being disposed on said substrate, said light receiving layer comprising a photoconductive layer formed of a non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared adsorption spectrum.The light receiving layer may further comprise a charge injection inhibition layer or/and a surface layer.

Abstract: An electrophotographic light-sensitive material is disclosed, comprising an elecrically conductive substrate having thereon at least a photoconductive layer and a surface layer in this order, wherein the photoconductive layer is made mainly of amorphous silicon containing hydrogen, the surface layer is made of a high molecular weight material as a binder with an electrically conductive metal oxide powder dispersed therein, and at least one layer made mainly of amorphous silicon carbide, amorphous silicon nitride, amorphous silicon oxide or amorphous carbon each containing hydrogen is provided as an intermediate layer between the surface layer and the photoconductive layers.

Abstract: The present invention provides novel titanium dioxide aggregates especially suitable for an electrophotographic photosensitive material. This titanium dioxide aggregates comprise sintered aggregates of fine primary particles and have a rutile type crystal structure and an oil absorption of 35-65. This titanium dioxide aggregates which are treated with a mineral acid is also provided. There is also provided an electrophotograpic photosensitive material which contains such titanium dioxide in a photosensitive layer.

Abstract: An electrophotographic photoreceptor is disclosed, comprising at least a substrate having thereon a charge transporting layer and a charge generating layer, wherein the charge transporting layer is a porous anodized film which is formed by anodizing a substrate comprising an Al-Mg alloy containing from 2.2 to 5.6% by weight of magnesium and, as impurities, at least one of Mn, Cu, Fe, Si, Cr, and Zn or an Al-Mn alloy containing from 1.0 to 1.5% by weight of manganese and, as impurities, at least one of Cu, Fe, Si, and Zn. And the electrophotographic photoreceptor can be produced by a process comprising subjecting a substrate comprising an Al-Mg alloy containing from 2.2 to 5.6% by weight of magnesium and, as impurities, at least one of Mn, Cu, Fe, Si, Cr, and Zn or an Al-Mn alloy containing from 1.0 to 1.

Abstract: An electrophotograhic light-sensitive material comprising a support having thereon a photoconductive layer containing at least inorganic photoconductive particles and a binder resin is disclosed, wherein the binder resin contains (A) at least one resin comprising a graft copolymer having a weight average molecular weight of from 1.0.times.10.sup.3 to 2.0.times.10.sup.4 and containing, as a copolymer component, at least one of polyester type macromonomers having a weight average molecular weight of from 1.0.times.10.sup.3 to 1.5.times.10.sup.4.

Abstract: An electrophotographic photoreceptor is disclosed, comprising a substrate, a charge transporting layer and a charge generating layer, wherein at least the surface of the substrate comprises aluminum or an aluminum alloy, and the charge transporting layer comprises an anodized aluminum film formed by anodizing the surface of the substrate.

Abstract: An improved photosensitive member for electrophotography which comprises an intermediate layer, a photoconductive layer and a surface protecting layer each formed upwardly in this order on a conductive substrate, the photoconductive layer comprising a non-doped a-Si layer made of a amorphous silicon containing hydrogen and/or halogen of 40 at. % or more.

Abstract: A method for preparing an electrophotographic photoreceptor comprising the steps of either forming a charge transporting layer comprising aluminum oxide and then forming a charge generating layer having amorphous silicon as the principal component, or forming a charge generating layer having amorphous silicon as the principal component and then forming a charge transporting layer comprising aluminum oxide. The charge transporting layer is formed by means of an ion assisted deposition method.

Abstract: An electrophotographic photoreceptor having a light-sensitive layer formed on an electrically conductive substrate is disclosed, which contains at least a layer chiefly made of a germanium-containing amorphous carbon as a light-sensitive layer or an anti-reflection layer.

Abstract: Disclosed is an electrophotographic photoreceptor which is superior in sensitivity to light of longer wavelength region with good stability of the sensitivity and is suitable for formation of high quality color image by scanning exposure with laser beam. This photoreceptor comprises an electroconductive support and, provided thereon, a photosensitive layer containing a titanium dioxide sensitive to light of longer wavelengths which is obtained by treating the surface of titanium dioxide particles with a mineral acid and then supporting on the surface of the particles a cyanine dye sensitizer and a hydrophobic organic compound. The mineral acid is preferably hydrofluoric acid and the hydrophobic organic compound is preferably aromatic or aliphatic organic acid and acid anhydride thereof.

Abstract: In an electrophotographic image-forming method to be practiced in an electrophotographic image-forming system including a halogen lamp light source, an optical system, a cylindrical photosensitive member, a main corona charger, an electrostatic latent image-forming mechanism, a development mechanism containing magnetic toner, a transfer sheet feeding mechanism, a transfer charger, a separating charger, a transfer sheet conveying mechanism, a cleaning mechanism and a charge-removing light source which is capable of adjusting an image-forming process speed, the improvement comprises: using an amorphous silicon light receiving member which comprises a substrate and a light receiving layer disposed on said substrate, said light receiving layer comprising a first layer capable of exhibiting a photoconductivity, a second layer capable of supporting a latent image and a third layer capable of supporting a developed image being laminated in this order on said substrate, said first layer being formed of an amorphous m

Abstract: An electrophotographic member comprising a support, a photoconductive layer formed thereon, and a surface layer formed thereon, said surface layer including or attaching a lubricating agent having a perfluoropolyoxyalkyl or perfluoropolyoxyalkylene group to form an organic surface protective lubricating layer, and a fixing group to be fixed to the surface layer, is excellent in moisture resistance, wear resistance and cleaning properties and thus useful in an electrophotographic apparatus with a long life and high reliability.

Abstract: An optoelectronic signal recording and storage medium including a base layer, a conductive layer, a photoconductive layer and storage layer has a coherent crystal morphology throughout, even though the chemical and electrical properties of its layers are by choice dramatically different. The base layer is preferably made of monocrystalline sapphire grown in a manner as to allow the growth of the other layers directly on a surface of the base layer without the need to grind and polish that surface, thereby minimizing internal defects in the medium. The monocrystalline base layer also allows the acceptance of exeptionally uniformly distributed charges over wide areas of the medium, thereby enabling the medium to locally record and store minutely differing optoelectronic signals on a background of minimal noise, thus facilitating low light level electronic or optical recording and long term storage of signals and minimal energy readout of those stored signals.

Abstract: A flexible electrophotographic imaging member including a supporting substrate, a charge generation layer and a charge transport layer, the charge generation layer containing a homogeneous dispersion of photoconductive particles of trigonal selenium dispersed in a film forming polymer blend of polycarbonate, polyvinylchloride-polyvinylacetate copolymer and a polymeer selected from the group consisting of phenoxy resin, styrene butadiene copolymer and mixtures thereof. This imaging member may be employed in an electrophotographic imaging process.

Abstract: An electrophotographic photoreceptor is disclosed, which comprises an electrically conductive substrate having thereon a photosensitive layer comprising a resin binder in which the following two kinds of charge generating materials are dispersed: (i) selenium or an alloy of selenium and (ii) a phthalocyanine derivative represented by the formula: ##STR1## wherein M represents AlCl, Mg, VO, InCl or H.sub.2. The electrophotographic photoreceptor exhibits a broad spectral sensitivity extending from the visible to the infrared regions of the spectrum and, therefore, can be suited for printers which utilize such light sources as semiconductor lasers, light emitting diodes, etc.

Abstract: A photosensitive member for electrophotographic photoreceptor, composed of an amorphous silicon containing carbon; nitrogen or oxygen and a specific amount of hydrogen and/or halogen, prepared by electron cyclotron resonance method, which is useful for xerographic systems.

Abstract: The present invention relates to the photosensitive member which provides at least a charge generating layer and charge transporting layer on an electrically conductive substrate, the charge transporting layer contains a polycarbonate resin I of at least first type polycarbonate resin having a mean molecular weight of 2-4.times.10.sup.4 and a polycarbonate resin II of at least second type polycarbonate resin having a mean molecular weight of 4-6.5.times.10.sup.4, said polycarbonate resin I contributing between 5 and 50 parts by weight of the combined ratio of polycarbonate resins I and II.

Abstract: A photoconductive element is described, comprising an amorphous silicon sensor and a transparent, insulative protective layer on the sensor, said protective layer comprising polymers or copolymers (including terpolymers, etc.) having one of four specific types of recurring units, or mixtures thereof, or polymer compositions composed mainly of the above polymers or copolymers; such a photoconductive element shows reduced damage of the sensor as compared to the conventional technique, and permits increases in productivity and decreases in production costs.

Abstract: An electrophotographic photosensitive member is disclosed which comprises an electrically conductive substrate and a photoconductive layer formed on said substrate, wherein the photoconductive layer is made of amorphous silicon containing 40 atomic % or more of hydrogen and/or halogen.

Abstract: An improved process for forming a functional deposited film by HR-CVD method which comprises disposing an electroconductive substrate or an insulating substrate at least one surface of which being applied with electroconductive treatment on a substrate holder in a substantially enclosed film-forming chamber, introducing a precursor formed in an activation chamber disposed separately from the film-forming chamber which is capable of contributing to the formation of the deposited film and an active species formed in another activation chamber disposed separately from the film-forming chamber and the activation chamber which is capable of chemically reacting with the precursor respectively and separately into said film-forming chamber, and chemically reacting them to thereby form a functional deposited film on the substrate, wherein a voltage in the range of from -5 V to -100 V is applied to the electroconductive substrate or the surface of the insulating substrate applied with the electroconductive treatment.

Abstract: An electrophotographic photoreceptor comprising a photoconductive layer, a first surface layer and a second surface layer formed in sequence on a support, said photoconductive layer being substantially composed of amorphous silicon, and each of said first and second surface layers being substantially composed of nitrogen-doped amorphous silicon, the concentration of nitrogen atoms in the second surface layer being higher than that in the first surface layer. The photoconductive layer is doped with atoms of an element of group III, or in at least a part of the photoconductive layer doped with germanium atoms in place of the element of group III.

Abstract: A photosensitive member for inputting digital light comprises photoconductive fine crystals of a genuine semiconductor or an amorphous semiconductor and having a mean particle diameter of 0.01.mu.-0.5.mu. and a binder embedding the fine crystals and having a volume resistivity of higher than 10.sup.13 ohm-cm. A mixture of the fine crystals and the binder is formed into a photosensitive layer having a thickness of 5.mu.-30.mu. and .gamma. of a latent image of larger than 6. The photosensitive member can be used in various methods of electrophotography.

Abstract: A positively and negatively chargeable electrophotographic photoreceptor is disclosed, comprising a substrate having thereon a charge blocking layer, an amorphous silicon photoconductive layer, and an amorphous silicon nitride surface layer provided in that order, wherein the charge blocking layer comprises of amorphous silicon nitride and the amorphous silicon photoconductive layer comprises of an i-type amorphous silicon containing 0.05 to 5.0 ppm of boron.

Abstract: An improved light receiving member for use in electrophotography having a light receiving layer provided with a charge carrier generation layer (hereinafter referred to as "CGL") and a charge carrier transport layer (hereinafter referred to as "CTL"), the CGL being formed of a non-single-crystal material composed substantially of silicon atom as the main constituent atom and at least one kind selected from hydrogen atom and halogen atom and the CTL being formed of a Non-Si(H,X) material containing carbon atom and a conductivity controlling element selected from the group consisting of boron, aluminum, gallium, indium and thallium belonging to group III of the Periodic Table or from the group consisting of phosphorus, arsenic, antimony and bismuth belonging to group V of the Periodic Table in an uneven state in the thicknesswise direction, and optionally at least one kind selected from oxygen atom and nitrogen atom in this order from the side of a substrate.

Abstract: A membrane for use in an X-ray mask composed of a compound comprising at least three kinds of elements of boron (B), silicon (Si) and nitrogen (N) in which the content of silicon in the compound is at least 15 atomic percent, but less than 100 atomic percent, and the atomic ratio of Si/(B+Si) in the compound is at least 0.2, but less than one. The membrane is synthesized from source gases including at least the foregoing three kinds of elements by chemical reaction under such conditions that the ratio of nitrogen to boron plus silicon is at least one in the source gases and thereby depositing a film of the compound onto a substrate. Since the membrane thus prepared has a high transmittance in the visible region and X-ray and their residual stress can be readily controlled by adjusting the conditions for the formation of the membrane, it is suitable for the preparation of X-ray masks.

Abstract: A method of producing an electrophotographic recording material, in which an aluminum substrate is coated with a blocking layer. The blocking layer is coated with a layer of amorphous silicon by direct current magnetron cathode sputtering. At least one sputter target containing silicon is used, and a power density of from about 2.0 W/cm.sup.2 to about 30 W/cm.sup.2 is used for the sputtering. The sputtering is performed in an atmosphere containing hydrogen and an inert gas, with a total pressure of inert gas and hydrogen being in a range from about 1.times.10.sup.-3 to about 10.times.10.sup.-3 mbar. This produces a layer of amorphous silicon having a hydrogen content of more than 40 atom %, an inert gas content in a range of 0.01 to 10 atom %, and in which the relative peak heights of the low and high temperature peaks during hydrogen effusion are approximately equal. The amorphous silicon layer is then coated with a cover layer.

Abstract: An electrophotographic photosensitive sensor comprises a blocking layer, a photoconductive layer and a surface layer made mainly of microcrystalline or amorphous silicon and/or germanium and formed on a conductive substrate. At least one of the layers including the blocking layer, the photoconductive layer or the surface layer includes a multilayer which includes a plurality of constituent thin layers having different optical energy band gaps.

Abstract: An electrophotographic recording material comprises a dual photoconductive layer applied to an electrically conductive substrate. The lower layer disposed on the substrate is made of an amorphous system of selenium and arsenic containing 18 to 37 percent by weight arsenic. The layer thereabove is made of As.sub.2-x Bi.sub.x Se.sub.3 or As.sub.2 Se.sub.3-y Te.sub.y. The recording material is highly sensitive in the visible spectral range as well as in the IR range and can therefore also be used for recordings with solid state laser diode radiation. In cyclic operation, the material exhibits only slight fatigue.

Abstract: A photosensitive member comprising an electrically conductive substrate, a charge generating layer and a charge transporting layer comprising amorphous carbon which contains hydrogen.The charge transporting layer contains about 0.1 to about 10 atomic % of chalcogen atoms or transition metal elements based on all the constituent atoms therein.The photosensitive member of this construction is excellent in electrophotographic characteristics inclusive of charge transportability and charging ability.

Abstract: A photosensitive member of the present invention comprises an electrically conductive substrate, a charge generating layer and a charge transporting layer comprising amorphous carbon which contains hydrogen.The charge transporting layer contains about 0.1 to about 25 atomic % of halogen based on all the constituent atoms therein, and in addition to halogen, oxygen and/or nitrogen may be contained in the charge transporting layer.The photosensitive member of this construction is excellent in electrophotographic characteristics inclusive of charge tranportability and charging ability.

Abstract: An optoelectronic signal recording and storage medium including a base layer, a conductive layer, a photoconductive layer and storage layer has a coherent crystal morphology throughout, even though the chemical and electrical properties of its layers are by choice dramatically different. The base layer is preferably made of monocrystalline sapphire grown in a manner as to allow the growth of the other layers directly on a surface of the base layer without the need to grind and polish that surface, thereby minimizing internal defects in the medium. The monocrystalline base layer also allows the acceptance of exeptionally uniformly distributed charges over wide areas of the medium, thereby enabling the medium to locally record and store minutely differing optoelectronic signals on a background of minimal noise, thus facilitating low light level electronic or optical recording and long term storage of signals and minimal energy readout of those stored signals.

Abstract: Disclosed is an electrographic imaging member comprised of a supporting substrate; and in contact therewith components comprised of regions of a photogenerating substance dispersed in a charge transporting material comprised of plasma deposited silicon oxide with at least 50 atomic percent of oxygen.

Abstract: A layered photoresponsive imaging member comprised of a supporting substrate; an amorphous photoconductive layer and a hole transport layer dispersed in a resinous binder, which layer is formulated from a solution mixture; and wherein the photoconductive layer is prepared by a process which comprises dissolving an inorganic photoconductive component in a solvent, removing the suspended particles therefrom, depositing the resulting solution on the supporting substrate, and subsequently heating the aforementioned member.

Abstract: A photoreceptor for electrophotography including an electrically conductive substrate, a bottom layer, a photoconductive layer composed mainly of amorphous silicon, and a surface layer, in that order. Both the bottom and surface layers have a greater optical bandgap than said photoconductive layer. A first middle layer is disposed between said bottom layer and said photoconductive layer, and a second middle layer is disposed between said photoconductive layer and said surface layer. Both the first and second middle layers are composed mainly of amorphous silicon and have a concentration of doped atoms which varies from the bottom to the top of the layer.

Abstract: A process for restoring imaging members, which comprises (1) providing a hydrogenated or halogenated amorphous silicon imaging member subsequent to its utilization in and removal from an electrophotographic imaging apparatus; and (2) contacting this member with a fluorine containing composition for an effective time period thereby resulting in an imaging member that when incorporated into an electrophotographic imaging apparatus enables the achievement of images with substantially no white spots as compared to the removed member.

Abstract: A light receiving member has a support and a light receiving layer. The light receiving layer has an inner layer composed of a-Si(Ge,Sn)(H,X) and an outer layer composed of a-Si(H,X) containing neither germanium atoms nor tin atoms. The support has an uneven surface of spherical dimples, each having an inside face provided with minute irregularities.The light receiving member exhibits high photosensitivity in the entire visible region of light; exhibits an excellent matching property with a semiconductor laser and shows quick light response. The member is suited for image formation by using coherent light, free from interference fringe patterns and spots upon reversed development even after repeated use for a long period of time. The member is free from defective images or blurring, shows high density with clear half tones, has a high resolving power, and can provide high quality images.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A process for forming a visible image in which an electrophotographic element having a homogeneous and amorphous silicon layer as the sole photoconductive layer is provided with a charge image and the charge image is developed by a developing powder. The electrophotographic element has a very thin silicon layer with a thickness between 0.5 and 3 .mu.m and a dark decay time greater than 25 seconds. The photoconductive layer is developed by a one-component developing powder having a resistivity of less than 10.sup.5 ohm.meter.

Abstract: A photocoductive film comprising at least one photosensitive material dispersed in a resinous binder is supersensitized and the dark decay rate thereof reduced by adding an effective amount of an organic acid having at least one carboxyl functional group and at least one hydroxyl functional group to the coating mixture from which the film is formed. The organic acid is an independent component of the coating mixture and is substantially not copolymerized with the binder resin.

Abstract: An electrophotographic image forming member comprises a substrate and a photoconductive layer overlying the substrate and composed of a hydrogenated amorphous silicon containing 0.001-1000 atomic ppm of carbon as an impurity based on silicon.

Abstract: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by an absorption layer for light of long wavelength formed of a polycrystal material containing silicon atoms and germanium atoms, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range of from 1.times.10.sup.-3 to 40 atomic %. The light receiving layer may have a charge injection inhibition layer or/and a contact layer.

Abstract: A photovoltaic device of improved flexibility is provided by using a tetrafluoroethylene-perfluoroalkoxy resin substrate.

Abstract: A photosensitive member of the present invention comprises an electrically conductive substrate, a charge generating layer and a charge transporting layer comprising amorphous carbon which contains hydrogen.The charge transporting layer contains about 0.1 to about 7 atomic % of oxygen and/or about 0.1 to about 5 atomic % of nitrogen based on all the constituent atoms therein.The photosensitive member of this construction is excellent in electrophotographic characteristics inclusive of charge transportability and charging ability.

Abstract: A light receiving member has a support and a light receiving layer. The support has an uneven-shaped surface of a plurality of spherical dimples, each dimple having an identical radius of curvature R and an identical width D, wherein the ratio D/R of the width D to the radius of curvature R is from 0.03 to 0.07. The light receiving layer is a multi-layered structure having an outer layer which formed from an amorphous material containing silicon atoms as the main constituent and at least one of hydrogen atoms and halogen atoms. The light receiving layer contains an inner layer of amorphous silicon which also contains germanium and/or tin and hydrogen and/or halogen.The light receiving member, when used with a coherent laser beam as an optical source, acts to prevent the occurrence of an interference fringe pattern during image formation.

Abstract: A photoreceptor for electrophotography which comprises an electroconductive substrate and a photoconductive layer formed thereon, said photoconductive layer essentially consisting of a thin film of amorphous silicon alloy containing at least one of hydrogen and fluorine and having the formula: a-Si.sub.1-m X.sub.m :Y wherein X is C, N or O, Y is at least one of H and F and m is a number of not less than zero and less than one, m being gradually decreased from the top surface of the photoconductive layer to the middle part of the photoconductive layer and gradually increased from the middle part of the photoconductive layer to the interface of the photoconductive layer with the electroconductive substrate in the direction of thickness, said photoreceptor having good electric charging property and photoconductivity characteristics.

Abstract: An electrophotographic sensitized body having a photoconductive layer comprising hydrogenated amorphous silicon on a substrate which comprises conductive material selected from the group consisting of A1, A1-Si (0.2-1.2 wt. %) - Mg (0.45-1.2 wt. %) alloy, super duralmine and extra super duralmine. Provided between the substrate and the photoconductive layer is a diffusion blocking layer 0.005-5 microns in thickness comprising a material selected from the group consisting of titanium nitride, tantalum nitride, hafnium nitride, platinum silicide, nickel silicide, palladium silicide, titanium silicide, hafnium silicide, tantalum silicide, tungsten silicide, vanadium silicide, niobium silicide, molybdenum silicide, zirconium silicide, tungsten carbide, titanium carbide, molybdenum carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide and metallic chrome.

Abstract: In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.