Abstract: A chemically amplified positive resist composition is provided comprising an alkali-insoluble or substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, an alkyl vinyl ether polymer, a photoacid generator, and a benzotriazole compound in a solvent. The composition forms on a substrate a resist film of 5-100 ?m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.

Abstract: A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.

Abstract: A resist composition includes: a crosslinking material that is crosslinked in the presence of an acid; an acid amplifier; and a solvent.

Abstract: A printing plate precursor for laser engraving, including a relief forming layer including a cured resin material formed by thermally crosslinking a resin composition including at least (A) non-porous inorganic particles, (B) a binder polymer having a glass transition temperature (Tg) of 20° C. or higher, and (C) a crosslinking agent.

Abstract: Gel for radiation dosimeter including a gel part (A) and a gel part (B) that become cloudy when exposed to a fixed dose or more, wherein said gel part (A) exposed to more than a specified dose above the fixed dose maintains a cloudy state regardless of the decrease in external temperature; and said gel part (B) exposed to less than the specified dose above the fixed dose changes gradually from a cloudy state into a transparent state according to the decrease in external temperature.

Abstract: The present invention relates to a photosensitive resin composition that includes a polymer prepared by using a macromonomer as an alkali soluble resin. The photosensitive resin composition is used for various types of purposes such as a photoresist for preparing a color filter, an overcoat photoresist, a column spacer, and an insulating material having a light blocking property, and improves physical properties such as residue or not, chemical resistance, and heat resistance of the photoresist.

Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

Abstract: The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.

Abstract: A radiation-sensitive composition can be used to prepare positive-working imageable elements having improved sensitivity and solvent resistance. These elements are useful for making lithographic printing plates and printed circuit boards. The composition includes a water-insoluble polymeric binder that has at least 20 mol % of recurring units comprising hydroxyaryl carboxylic acid ester groups, some of which can be substituted with cyclic imide moieties.

Abstract: A coating composition for forming a heat-sensitive transfer image-receiving sheet provided with at least one receptor layer on a support, wherein the composition comprises a latex polymer containing a repeating unit derived from a monomer represented by formula (1); and a heat-sensitive transfer image-receiving sheet prepared by using the coating composition: wherein, R1 represents a hydrogen atom, a halogen atom or a methyl group; L1 represents a divalent linking group; R2 represents an alkylene group having 1 to 5 carbon atoms which may be further substituted; n represents an integer of 1 to 40; Z1 represents a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, a cycloalkyl group, or an aryl group; and when n is 2 or more, R2s may be the same or different.

Abstract: In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

Abstract: Provided is an article that comprises a substrate comprising an acid-etchable layer, a water-soluble polymer matrix, and a photoacid generator. Also provided is a method for patterning that can provide patterned layers that can be used to form electroactive devices.

Abstract: Base soluble polymer comprising at least one sulfonyl group where at least one carbon atom at ?-position and/or ?-position and/or ?-position with respect to the sulfonyl group has a hydroxyl group, where the hydroxyl group is protected or unprotected are described.

Abstract: In a composition for forming an interfacial layer on a photoresist pattern, and a method of forming a pattern using the composition, the composition includes a water-soluble polymer, a cross-linking agent and a water-miscible solvent. The water-soluble polymer includes a repeating unit represented by Formula 1, wherein R1, R2, R3, R4 and R5 independently denote a hydrogen atom, a hydroxyl group, an alkyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt, R6 denotes a hydrogen atom or an alkyl group, m denotes an integer of 1 to 4 both inclusive, and x denotes an integer of 1 to 1,000 both inclusive. Also, at least one of R1, R2, R3, R4 and R5 is a hydroxyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt.

Abstract: This invention relates to a negative-working photosensitive resin composition that can be developed in an alkaline developer. This photosensitive resin composition comprises: (a) a polyimide having at least one group selected from the group consisting of a carboxyl group, a phenolic hydroxyl group, a sulfonic acid group, and a thiol group at the terminus of the polymer main chain; (b) a compound having a polymerizable functional group comprising unsaturated double and/or triple bonds; and (c) a photopolymerization initiator.

Abstract: A radiation-sensitive composition includes a free radically polymerizable component, an initiator composition capable of generating free radicals sufficient to initiate polymerization upon exposure to imaging radiation, an infrared radiation absorbing dye having a tetraaryl pentadiene chromophore, a polymeric binder comprising a polymer backbone to which are directly or indirectly linked poly(alkylene glycol) side chains, and a nonionic phosphate acrylate having a molecular weight of at least 250. This composition can be used to prepare a negative-working imageable element that is sensitive to suitable imaging radiation and can be imaged at relatively low energy and developed either on-press or off-press.

Abstract: Disclosed herein is a top anti-reflective coating composition comprising a bissulfone compound, as a photoacid generator, represented by Formula 1 below: wherein R1 and R2 are independently, a straight, branched or cyclic alkyl, aryl, alkenyl, oxoalkyl or oxoaryl group of 1 to 20 carbon atoms; or a halogen-substituted straight, branched or cyclic alkyl, aryl, alkenyl, oxoalkyl or oxoaryl group of 1 to 20 carbon atoms. Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern of a semiconductor device.

Abstract: Thermally curable undercoat composition comprising for producing a bilayer relief image comprising: a) a polymer of Structure I comprising repeating units of Structure II, III, and IV b) a phenolic crosslinker; c) a thermal acid generator (TAG); and d) a solvent.

Abstract: Disclosed are a composition for an organic bottom anti-reflective coating able to improve the uniformity of a photoresist pattern with respect to an ultra-fine pattern formation process among processes for manufacturing semiconductor device, which prevents scattered reflection from the bottom film layer and eliminating the standing wave effect due to alteration of the thickness of the photoresist film itself resulting in increase of uniformity of the photoresist pattern. The composition for organic bottom anti-reflective coating is able to reduce amount of polyvinylphenol by introducing a specific light absorbent agent having an etching velocity higher than of the polyvinylphenol, thus notably improving the etching velocity for the organic anti-reflective coating by about 1.5 times, so that and the present composition prevents over-etching of the photoresist to make it possible to conduct a smooth etching process for a layer to be etched.

Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern to be thickened regardless of a material or a size thereof so as to form a fine space pattern, exceeding an exposure limit of exposure light. The resist pattern thickening material comprises: a resin; a crosslinking agent; and a nitrogen-containing compound. In a process for forming a resist pattern of the present invention, the resist pattern thickening material is applied on a surface of a resist pattern to be thickened, thereby forming a resist pattern. A process for manufacturing a semiconductor device of the present invention includes: applying the thickening material on a surface of a resist pattern to be thickened which is formed on an underlying layer, so as to thicken the resist pattern to be thickened and form a resist pattern; and patterning the underlying layer by etching using the resist pattern.

Abstract: A photoresist composition including a polymer, a photoacid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

Abstract: A photosensitive resin which exhibits excellent storage stability, affinity, miscibility, or solubility with respect to a variety of compounds, and high sensitivity can be solidified even under hydrous conditions as well as exhibiting high cure-related sensitivity and high flexibility and being uniformly solidified even under highly hydrous conditions, a photosensitive resin composition containing the resin, and a novel compound. The photosensitive resin is a saponified poly(vinyl acetate)-based photosensitive resin having a structural unit represented by formula (1): (wherein R1 represents H or Me; R2 represents a linear or branched C2-C10 alkylene group; n is an integer of 1 to 3; X represents m is an integer of 0 to 6; and Y represents an aromatic ring or a single bond).

Abstract: The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by using a negative photoresist composition comprising a melamine derivative and polyvinylphenol.

Abstract: The invention generally relates to positive-working coating compositions and to a substrate formed with a coating of that composition. Advantageous versions of the invention provide an infrared imageable, positive lithographic printing plate having a coating comprising a hydroxy substituted polymer, a diphenylcarbinol solubility suppressing compound and an infrared radiation absorbing compound.

Abstract: A method of preparing negative-working, single-layer imageable elements improves their storage stability in a humid environment. The method includes enclosing the coated imageable elements in a water-impermeable sheet material that substantially inhibits the transfer of moisture to and from the imageable element. Such imageable elements include a radiation-sensitive composition that includes a radically polymerizable component, an initiator composition to provide radicals upon exposure to imaging radiation, a radiation absorbing compound, and a polymeric binder having poly(alkylene glycol) side chains.

Abstract: A photosensitive resin composition of the present invention comprises (A) a resin having a repeating unit represented by formula (IA) and a repeating unit containing an acid decomposable group and copolymerizable with formula (IA), which is decomposed under the action of an acid to increase the solubility in an alkali developer, (B1) a compound capable of generating an aliphatic or aromatic sulfonic acid substituted by at least one fluorine atom upon irradiation with actinic rays or radiation, (B2) a compound capable of generating an aliphatic or aromatic sulfonic acid containing no fluorine atom, or an aliphatic or aromatic carboxylic acid upon irradiation with actinic rays or radiation, and (C) a solvent.

Abstract: A positive image recording material applicable to infrared laser comprising a support whereon is formed a photosensitive/heatsensitive layer containing (A) an alkali-soluble resin, (B) a photothermal conversion substance, and (C) at least one compound selected from a group of compounds defined by the formulae (I), (II), (III), and (IV) exhibiting improved solubility to an alkaline developer following exposure with an infrared laser wherein the substituent groups of the formulae (I) to (IV) are specified in the specification for this invention.

Abstract: The present invention relates to a photosensitive composition useful at wavelengths between 300 nm and 10 nm which comprises a polymer containing a substituted or unsubstituted higher adamantane.

Abstract: A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The negative photoresist composition comprises a radiation sensitive acid generator, a first polymer containing an alkoxymethyl amido group and a hydroxy-containing second polymer. The first and second polymers may also have a repeating unit having an aqueous base soluble moiety. The first and second polymers undergo acid catalyzed crosslinking upon exposure of the acid to radiation, producing a product that is insoluble in an aqueous alkaline developer solution.

Abstract: Novel silicon-containing polymers are provided comprising recurring units having a POSS pendant and units which improve alkali solubility under the action of an acid. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of up to 300 nm and improved resistance to oxygen plasma etching.

Abstract: Thermally imageable elements useful as lithographic printing plate precursors are disclosed. The elements may be either single layer or multilayer elements and comprise an alkali soluble co-polymer, or a mixture of alkali soluble co-polymers. The resulting printing plates have good resistance to pressroom chemicals.

Abstract: Thermally imageable elements useful as lithographic printing plate precursors are disclosed. The elements comprise a substrate, an underlayer over the substrate, and a top layer over the underlayer. The top layer comprises a co-polymer that comprises, in polymerized form, norbornene or a norbornene derivative. The resulting lithographic printing plates have good resistance to pressroom chemicals.

Abstract: Polymers and co-polymers having monomeric units formed by the polymerization of monomers of the Structure I where R1 is a moiety containing an ethylenically unsaturated polymerizable group, R2 is a C1-C3 alkylene group, and R3 is a C1-10 linear or cyclic alkyl group, a C6-10 aromatic or substituted aromatic group, a C1-8 alkoxy methyl, or a C1-8 alkoxy ethyl group, are useful as binder resins for photosensitive compositions, and processes for photolithography in the production of semiconductor devices and materials.

Abstract: This invention discloses compositions that can be polymerized/crosslinked imagewise upon exposure to ionization radiation such as x-ray, electron beam, ion beam, and gamma-ray. This invention also discloses methods of use for these compositions for microfabrication of ceramics, for stereolithography, and for x-ray, e-beam, and ion-beam lithography which can be used for photoresists.

Abstract: The present invention also includes an imageable element, comprising a substrate and a thermally imageable composition comprising a thermally sensitive polymer which exhibits an increased solubility in an aqueous developer solution upon heating. The thermally sensitive polymer includes at least one covalently bonded unit and at least one thermally reversible non-covalently bonded unit, which includes a two or more centered H-bond within each of the non-covalently bonded unit. The present invention also includes a method of producing the imaged element. The present invention still further includes a thermally imageable composition comprising comprising a thermally sensitive polymer according to the present invention and a process for preparing the thermally sensitive polymer, which is a supramolecular polymer.

Abstract: A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: wherein R1 is H, C1-C4 alkyl, or CF3; Q is C4-C12 cycloalkyl; R2 is H, C1-C4 alkyl, or CF3; R3 is C4-C12 branched or cyclic alkyl; and x+y+z equals to 1. The chemically-amplified resist compositions of the present invention not only can be applied maturely to general lithographic processes, especially to 193 nm lithographic process, but also have excellent photo-sensitivity, and can form a well-resolved pattern and profile.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: A photoresist which has high transparency at a wavelength of 157 nm and which therefore permits a greater layer thickness in photolithographic processes for the production of microchips. The photoresist includes a polymer that is prepared from a first fluorinated comonomer that includes a group cleavable under acid catalysis, a second comonomer that includes an anchor group, and a third comonomer whose degree of fluorination is tailored to the second comonomer so that at least one of the comonomers acts as an electron donor and the others act as electron acceptors in the free radical polymerization. Thus, in spite of a high degree of fluorination, the polymer can be prepared in a simple manner and in high yield.

Abstract: A photopolymerisable system is disclosed which can be polymerised by exposure to UV light, for example, to form a solid, light-transmitting sheet material having volume refractive index variations defining an optical diffuser or a hologram, for example. The system includes a silicone monomer, prepolymer, macromonomer or co-monomer capable of undergoing free radical initiated polymerization and further includes a photoinitiator.

Abstract: Present invention provides an aqueous emulsion type photosensitive resin composition which forms a cured film significantly superior in water and solvent resistances in comparison with the conventional aqueous emulsion type photosensitive resin compositions. This photosensitive resin composition contains (A) an emulsion of a photosensitive water-insoluble polymer, the emulsion being obtained by reacting (i) an aqueous polymer emulsion whose main ingredient is a water-insoluble polymer and which contains a polymer having a hydroxyl group with (ii) an N-alkylol(meth)acrylamide, (B) a compound having a photoreactive ethylenically unsaturated group, and (C) a photopolymerization initiator.

Abstract: Disclosed are photoimageable compositions containing silsesquioxane binder polymers and photoactive compounds, methods of forming relief images using such compositions and methods of manufacturing electronic devices using such compositions. Such compositions are useful as photoresists and in the manufacture of optoelectronic devices.

Abstract: The invention relates to a novel negative, aqueous photoresist composition comprising a polyvinylacetal polymer, a water-soluble photoactive compound and a crosslinking agent. The water-soluble photoactive compound is preferably a sulfonium salt. The invention also relates to forming a negative image from the novel photoresist composition.

Abstract: A photosensitive resin composition which includes a photosensitive saponified PVA having a pendant group derived from a quaternary styrylpyridinium or styrylquinolinium, or a derivative thereof. The composition comprises a photosensitive saponified PVA which has structural units represented by formulas (1) to (4): which product is dissolved in at least one organic solvent selected from the group consisting of compounds represented by formulas (5), (6), and (7). The resin composition can be dissolved in a comparatively safe high-boiling-point solvent, such as propylene glycol, and can be developed with water.

Abstract: A radiation sensitive refractive index changing composition whose refractive index of a material is changed by a simple method, whose changed refractive index difference is sufficiently large, and which can provide a stable refractive index pattern and a stable optical material regardless of their use conditions. The radiation sensitive refractive index changing composition comprises (A) a polymerizable compound, (B) a non-polymerizable compound having a lower refractive index than the polymer of the polymerizable compound (A), and (C) a radiation sensitive polymerization initiator.

Abstract: To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity. A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.

Abstract: The invention provides a lithographic printing for precursor having an imagable coating on an aluminum support, wherein the imagable coating comprises a polymeric substance comprising colorant groups, and wherein the aluminum support on which the coating is provided is anodized but not subsequently modified by means of a post-anodic treatment compound, and the coating does not comprise a colorant dye. The polymeric substance may also comprise pendent infra-red or developer dissolution inhibiting groups, and these groups may also be the colorant groups themselves.

Abstract: Polymeric material, containing a latent acid which can be converted to an acid by irradiation by a laser and optionally further ingredients.

Abstract: A method of colouring a polymeric material containing a) a latent acid, b) a colour former and c) optionally further ingredients by irradiation with UV-light.

Abstract: A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).