Abstract: Methanofullerene derivatives having side chains with acid-labile protecting groups. The methanofullerene derivatives may find application as photoresist materials, and particularly as positive-tone photoresists.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: A positive resist composition, which comprises a resin having a structure showing a basicity and capable of increasing the solubility in an alkali developer by the action of an acid, and a pattern-forming method using the same.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a fluorine-containing compound capable of generating an acid upon irradiation with an actinic ray or radiation, wherein the acid has a polarity converting group, and the fluorine content of the fluorine-containing compound (A) is 20% or more based on the molecular weight of the fluorine-containing compound (A).

Abstract: A low surface energy photoresist composition is described that comprises a silicone-polyether block copolymer, wherein the silicone block comprises 35 wt. % or more of said copolymer. When compounded with a photoresist composition, the composition enables the release of a phototool from the photoresist layer.

Abstract: A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.

Abstract: Methods, devices, systems, and materials are disclosed for diffraction unlimited photofabrication. A method is provided where a photoresponsive material is illuminated with a first optical pattern at a first wavelength of light. The first wavelength of light alters a solubility of the photoresponsive organic material. The photoresponsive material is also illuminated with a second optical pattern at a second wavelength of light. The second wavelength of light hinders the ability of the first wavelength of light to alter the solubility of the photoresponsive organic material where the second optical pattern overlaps the first optical pattern. The photoresponsive organic material is then developed.

Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

Abstract: Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) which contains at least one phenolic hydroxyl group and at least one group where a hydrogen atom in a phenolic hydroxyl group is substituted by a group represented by the following General Formula (1) (in the formula, each of R11 and R12 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group; X11 represents an aryl group; M11 represents a single bond or a divalent linking group; and Q11 represents an alkyl group, a cycloalkyl group or an aryl group, wherein the number of carbon atoms which are included in the group represented by -M11-Q11 is 3 or more, and at least two of R11, R12, Q11, and X11 may form a ring by bonding to each other).

Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

Abstract: There is provided to a pattern reversal film forming composition that is capable of forming a pattern reversal film which is not mixed with a resist pattern formed on a substrate, and that is only capable of forming a pattern reversal film advantageously covering the pattern, but also irrespective of whether the resist pattern is coarse or fine, capable of forming a planar film excellent in temporal stability on the pattern. A pattern reversal film forming composition including a polysiloxane, an additive and an organic solvent, characterized in that the polysiloxane is a product of a hydrolysis and/or condensation reaction of a silane compound containing a tetraalkoxysilane of Si(OR1)4 and an alkoxysilane of XnSi(OR2)4-n, and the tetraalkoxysilane is used in a ratio of 1 to 50% by mole based on the number of moles of the whole silane compound; and a pattern reversal film and a method of forming a reversed pattern in which the composition is used.

Abstract: Compounds of the Formula (I), wherein L1, L?1, L?1, L2, L?2, L?2, L3, L?3, L?3, L4, L?4 and L?4 for example are hydrogen or COT; R, R? and R? for example are hydrogen, C6-C12aryl or C3-C20heteroaryl; X, X? and X? for example are O, S, single bond, NRa or NCORa, T is for example hydrogen, C1-C20alkyl, C3-C12cycloalkyl, C2-C20alkenyl, C5-C12cycloalkenyl, C7-C18cycloalkylenaryl, C5-C18cycloalkylenheteroaryl, C6-C14aryl, providedthat at least one of R, R? or R? is unsubstituted or substituted C3-C20heteroaryl; and Y is an inorganic or organic anion; are suitable as photolatent acid generators.

Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.

Abstract: A polymerizable composition contains: (A) a polymer compound having (a1) a repeating unit having a structure represented by the following formula (a1-1) in a side chain thereof; and (B) a polymerization initiator, and in the formula (a1-1), R11 and R12 each independently represents a hydrogen atom, an alkyl group, an aryl group, a heterocyclic group, a sulfo group, an alkylsulfonyl group, a arylsulfonyl group, an acyl group, an aryloxycarbonyl group, an alkoxycarbonyl group or a carbamoyl group, R13, R14 and R15 each independently represents a hydrogen atom, an alkyl group or an aryl group, L1 represents a divalent connecting group, Y1 represents a single bond or a divalent connecting group selected from the group consisting of —CO—, —O—, —HN—, a divalent aliphatic group, a divalent aromatic group and a combination of these groups, and * indicates a site connecting to a main chain of the polymer compound.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

Abstract: A positive photosensitive resin composition including: a resin comprising a structural unit having an acid dissociative group and a structural unit having a functional group capable of forming a covalent bond by reacting with a carboxyl group or a phenolic hydroxyl group; and an acid generator represented by the following formula (I): wherein in formula (I), R1 represents a hydrogen atom, an alkyl group, an alkenyl group, a cyano group, an aryl group or the like; R2 represents an alkyl group or an aryl group; each of R3 and R4 independently represents a hydrogen atom, an alkyl group an aryl group or the like; and X represents —O—, —S—, —NH— or the like.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

Abstract: There is provided a sulfonium salt having high photosensitivity to the i-line. The invention relates to a sulfonium salt represented by formula (1) described below: [in formula (1), R1 to R6 each independently represent an alkyl group, a hydroxy group, an alkoxy group, an alkylcarbonyl group, an arylcarbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an arylthiocarbonyl group, an acyloxy group, an arylthio group, an alkylthio group, an aryl group, a heterocyclic hydrocarbon group, an aryloxy group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, a hydroxy(poly)alkyleneoxy group, an optionally substituted amino group, a cyano group, a nitro group, or a halogen atom, m1 to m6 each represent the number of occurrences of each of R1 to R6, m1, m4, and m6 each represent an integer of 0 to 5, m2, m3, and m5 each represent an integer of 0 to 4, and X? represents a monovalent polyatomic anion].

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition, wherein when a film having a film thickness of 100 nm is formed from the actinic ray-sensitive or radiation-sensitive resin composition, the film has a transmittance of 55 to 80% for light at a wavelength of 193 nm, and a pattern forming method using the composition are provided.

Abstract: A photosensitive resin composition for an interlayer insulating film or a protective film of a substrate for circuit formation, which includes a polymer (a) having a structural unit shown by the formula (A) and a compound (b) which generates a radical when irradiated with active rays and has a structure shown by the following formula (B).

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a nitrogen-containing organic compound (C) containing a compound (C1) represented by general formula (c1) shown below and an acid-generator component (B) which generates acid upon exposure (excluding the compound (C1)) (R1 represents an alicyclic group of 5 or more carbon atoms which may have a substituent; X represents a divalent linking group; Y represents a linear, branched or cyclic alkylene group or an arylene group; Rf represents a hydrocarbon group containing a fluorine atom; and M+ represents an organic cation).

Abstract: A radiation-sensitive resin composition includes (A) a polymer that includes a structural unit (I) including a group shown by the following formula (i), (B) a photoacid generator, and (C) a polymer that has a fluorine atom content lower than that of the polymer (A), and includes an acid-labile group. The polymer (A) preferably includes a structural unit shown by the following formula (1) as the structural unit (I). It is preferable that X in the formula (1) represent a divalent or trivalent chain-like hydrocarbon group or alicyclic hydrocarbon group.

Abstract: A radiation-sensitive resin composition including (A) a polymer that includes a repeating unit (a1) and a fluorine atom, and (B) a photoacid generator, the repeating unit (a1) including a group shown by any of the following formulas (1-1) to (1-3).

Abstract: A radiation-sensitive resin composition excelling in basic properties as a resist such as sensitivity, resolution, and the like, having a wide depth of focus (DOF) to both a line-and-space pattern and an isolated space pattern, and exhibiting a minimal line width change due to fluctuation of a bake temperature, and having a small line width limit in which the line pattern destroying phenomenon does not occur, and a lactone-containing copolymer useful as a resin component of the composition are provided. The lactone-containing copolymer is represented by a copolymer of the following compounds (1-1), (2-1), and (3-1). The radiation-sensitive resin composition comprises (a) the lactone-containing copolymer and (b) a photoacid generator.

Abstract: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

Abstract: An ortho-nitrobenzyl ester compound including a compound represented by Chemical Formula 1, and a positive photosensitive resin composition including the same are provided.

Abstract: There is disclosed a fluorine-containing polymer compound comprising a repeating unit (a) of the following general formula (2) and having a weight-average molecular weight of 1000 to 1000000 where R1 represents a polymerizable double bond-containing group; R2 represents a fluorine atom or a fluorine-containing alkyl group; R3 represents a hydrogen atom, an acid labile group, a cross-linking site or the other monovalent organic group; and W1 represents a linking moiety. When the fluorine-containing polymer compound is used in a resist compound for pattern formation by high energy radiation of 300 nm or less wavelength or electron beam radiation, it is possible to form a resist pattern with a good rectangular profile.

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract: The present invention provides dual energy imaging compositions, processes for forming dual energy imaging compositions, methods for forming images using dual energy imaging compositions and substrate (e.g., paper web) treated (e.g., coated) on one or both sides with a dual energy imaging composition. Also provided is a particulate comprising a matrix of polymer material and containing one or more image-forming agents and a photo-oxidizing agent useful in making dual energy imaging compositions.

Abstract: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

Abstract: The present invention provides dual wavelength imaging compositions, processes for forming dual wavelength imaging compositions, methods for forming images using dual wavelength imaging compositions and substrate (e.g., paper web) treated (e.g., coated) on one or both sides with dual wavelength imaging compositions. Also provided is a dual wavelength imaging particulate comprising a matrix of polymer material and containing: one or more image-forming agents; a photo-oxidizing agent which is activated at a first wavelength of light to cause the one or more image-forming agents to form one or more images; and a reducing agent which is activated at a second wavelength of light to cause termination of the formation of the one or more images.

Abstract: Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a photoinitiator and a photoinhibitor. The photoinitiator may be effective to generate a first reactant upon the absorption of at least one photon of a particular wavelength of light. The first reactant may be effective to render the resin soluble or insoluble in a photoresist developer. The photoinhibitor may be effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light. The second reactant may be effective to inhibit the first reactant.

Abstract: The invention pertains to a compound generating an acid of the formula I or II, for instance corresponding sulfonium and iodonium salts, as well as corresponding sulfonyloximes wherein X is CH2 or CO; Y is O, NR4, S, O(CO), O(CO)O, O(CO)NR4, OSO2, O(CS), or O(CS)NR4; R1 is for example C1-C18alkyl, C1-C10haloalkyl, C2-C12alkenyl, C4-C30cycloalkenyl, phenyl-C1-C3-alkyl, C3-C30cycloalkyl, C3-C30cycloalkyl-C1-C18alkyl, interrupted C2-C18alkyl, interrupted C3-C30cycloalkyl, interrupted C3-C30cycloalkyl-C1-C18alkyl, interrupted C4-C30cycloalkenyl, phenyl, naphthyl, anthracyl, phenanthryl, biphenylyl, fluorenyl or heteroaryl, all unsubstituted or are substituted; or R1 is NR12R13; R2 and R3 are for example C3-C30cycloalkylene, C3-C30cycloalkyl-C1-C18alkylene, C1-C18alkylene, C1-C10haloalkylene, C2-C12alkenylene, C4-C30cycloalkenylene, phenylene, naphthylene, anthracylene, phenanthrylene, biphenylene or heteroarylene; all unsubstituted or substituted; R4 is for example C3-C30cycloalkyl, C3-C30cycloalkyl-C1-C18al

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that can form independent line patterns with high resolution and excellent shapes and shows excellent resist performances including roughness characteristics, and to provide an actinic ray-sensitive or radiation-sensitive film and a pattern forming method using the composition. The actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group represented by the following General Formula (1) (the respective symbols in the formula represent the same definitions as in the claims and the specification).

Abstract: To provide a negative photosensitive composition applicable to preparation of partition walls which can maintain excellent ink repellency even after ink affinity-imparting treatment, and partition walls for an optical device using such a composition. A negative photosensitive composition comprising the following ink repellent (A) in an amount of from 0.

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition excelling in the LWR, pattern collapse performance and DOF, and a method of forming a pattern using the same. The composition according to the present invention contains (A) a resin containing a repeating unit with any of partial structures of general formula (I) below, (B) a compound (PA) as defined in the specification, and (C) a compound being configured to generate an acid when exposed to actinic rays or radiation, wherein the resin is contained in an amount of 50 mass % or more based on total solids of the composition.

Abstract: The invention provides a dye-containing negative curable composition containing at least a dye soluble in an organic solvent, a photopolymerization initiator, a photopolymerizable compound containing an amine structure, and an organic solvent; a color filter formed from the dye-containing negative curable composition; a method of producing the color filter; and a solid-state image sensor.

Abstract: The present invention provides a salt represented by the formula (I): wherein Q1 and Q2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, L1 and L2 independently each represent a C1-C17 divalent saturated hydrocarbon group in which one or more —CH2— can be replaced by —O— or —CO—, ring W1 and ring W2 independently each represent a C3-C36 aliphatic ring, R2 is independently in each occurrence a C1-C6 alkyl group, R4 is independently in each occurrence a C1-C6 alkyl group, R3 represents a C1-C12 hydrocarbon group, t represents an integer of 0 to 2, u represents an integer of 0 to 2, and Z+ represents an organic counter ion.

Abstract: A colored curable composition for a color filter includes: (A) a pigment in an amount of from 35 to 70 mass % with respect to the total solid content of the colored curable composition, (B) an amino resin, (C) an alkali-soluble resin, (D) a polymerizable monomer, and (E) a photopolymerization initiator, in which the proportion of (B) the amino resin to (C) the alkali-soluble resin (B/C; mass ratio) is in the range of from 1 to 10.

Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.

Abstract: A photosensitive element comprises a support, a photosensitive layer and a protective film laminated in that order, wherein the photosensitive layer is composed of a photosensitive resin composition containing a binder polymer, a photopolymerizing compound, a photopolymerization initiator and a compound with a maximum absorption wavelength of 370-420 nm, and the protective film is composed mainly of polypropylene.

Abstract: A photocurable and thermosetting composition comprises (A) a carboxyl group-containing resin having at least one carboxyl group in its molecule, (B) a photopolymerization initiator having an oxime linkage represented by the following general formula (I), (C) a reactive diluent, and (D) an epoxy compound having two or more epoxy groups in its molecule. The above-mentioned photopolymerization initiator (B) is incorporated into a formulation which is different from at least a formulation into which the above-mentioned carboxyl group-containing resin (A) and the above-mentioned reactive diluent (C) are incorporated to formulate a system comprising at least two parts.

Abstract: There is provided a photosensitive resin composition comprising: (a) 100 parts by weight of a polyorganosiloxane obtained by a method of combining at least one silanol compound represented by the following formula (1): R12Si(OH)2??(1) {the groups in the formula being defined in the claims}, at least one alkoxysilane compound represented by the following formula (2): R2aR3bSi(OR4)4-a-b??(2) {the groups in the formula being defined in the claims} and a catalyst, and polymerizing them without active addition of water; (b) 1-50 parts by weight of a photopolymerization initiator; (c) 40-600 parts by weight of a fluorene compound represented by the following formula (3): {the groups in the formula being defined in the claims}; and (d) 20-300 parts by weight of a compound other than component (c), having one or two (meth)acryloyl groups in the molecule.

Abstract: A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.

Abstract: The invention relates to an underlayer coating composition comprising a polymer, where the polymer comprises at least one hydroxyaromatic unit in the backbone of the polymer phenol which has a pendant group comprising a fluoro or iodo moiety, and at least one unit comprising an aminoplast. The invention further relates to a process for forming an image using the composition, especially for EUV.

Abstract: Methods of adjusting dimensions of resist patterns are provided. The methods allow for control of photoresist pattern dimensions and find particular applicability in resist pattern rework in semiconductor device manufacturing.

Abstract: A photosensitive resin composition comprising (A) a binder polymer, (B) a photopolymerizing compound having an ethylenic unsaturated bond in the molecule, (C) a photopolymerization initiator and (D) a polymerization inhibitor, wherein the content of the (D) polymerization inhibitor is 20-100 ppm by mass based on the total solid content of the composition.

Abstract: A photosensitive resin composition comprising a (A) binder polymer, a (B) photopolymerizing compound having ethylenic unsaturated bonds in the molecule, a (C) photopolymerization initiator and a (D) polymerization inhibitor, wherein the (C) photopolymerization initiator comprises an acridine compound, and the content of the (D) polymerization inhibitor is 20-100 ppm by weight.

Abstract: The invention concerns a method for patterning a surface of a material. A substrate having a polymer film thereon is provided. The polymer is a selectively reactive polymer (e.g., thermodynamically unstable): it is able to unzip upon suitable stimulation. A probe is used to create patterns on the film. During the patterning, the film is locally stimulated for unzipping polymer chains. Hence, a basic idea is to provide a stimulus to the polymeric material, which in turn spontaneously decomposes e.g., into volatile constituents. For example, the film is thermally stimulated in order to break a single bond in a polymer chain, which is sufficient to trigger the decomposition of the entire polymer chain.