Abstract: A novel compound is a highly-sensitive photopolymerization initiator with excellent stability, low sublimability, excellent developability, and high transmittance in the visible region. It efficiently absorbs, and is activated by, near-ultraviolet rays such as at 365 nm. Also provided are a photopolymerization initiator and a photosensitive composition using such compound. An oxime ester compound is represented by the following general formula (I), a photopolymerization initiator containing the same, and a photosensitive composition containing the photopolymerization initiator and a polymerizable compound having an ethylenically unsaturated bond: R1 and R2 each represent R11, COR11, CONR12R13, CN, etc.; R11, R12, and R13 each represent a C1-20 alkyl group, etc.; R3 and R4 each represent R11, OR11, COR11, CONR12R13, OCOR11, CN, a halogen atom, etc.; a and b each represent an integer 0-4; X represents an oxygen atom, a sulfur atom, etc.

Abstract: Disclosed is a photobase generator comprising a compound having a nitrogen atom and a conjugated multiple bond.

Abstract: A low-resistance, fine electrode is formed by baking in air a photosensitive paste which has an inorganic component containing copper powder, boron powder, and glass frit, and an organic component containing a photopolymerization initiator, monomer, and organic vehicle, and in which the average particle size of the copper powder is 2.5 ?m or less, and the content of boron powder based on the total amount of copper powder and boron powder is 8 to 25 wt %.

Abstract: A polymer suitable as a base resin for a positive resist composition, in particular a chemically amplified positive resist composition, having a higher resolution, a larger exposure allowance, a smaller sparse-dense size difference, a better process applicability, a better pattern configuration after exposure, and in addition, a further excellent etching resistance, than a conventional positive resist. A positive resist composition using the same, a patterning process, and a novel polymerizable compound to obtain the polymer. A polymer has a hydrogen atom of at least a carboxyl group is substituted by an acid labile group represented by the following general formula (2), a positive resist composition using the same, a patterning process, and a novel polymerizable compound to obtain a polymer like this.

Abstract: Photoacid generators generate sulfonic acids of formula (1a) or (1b) upon exposure to high-energy radiation. R1—COOCH2CF2SO3?H+??(1a) R1—O—COOCH2CF2SO3?H+??(1b) R1 is a monovalent C20-C50 hydrocarbon group of steroid structure which may contain a heteroatom. The bulky steroid structure ensures adequate control of acid diffusion. The photoacid generators are compatible with resins and suited for use in chemically amplified resist compositions.

Abstract: Disclosed are photosensitizers that include a polyol moiety covalently bonded to a fused aromatic moiety. Also disclosed is a method for improving UV laser ablation performance of a coating, such as a cationic UV curable coating, by incorporating an oxalyl-containing additive into the cationic UV curable or other coating. Oxalyl-containing sensitizers having the formula Q-O—C(O)—C(O)—O—R1, wherein Q represents a fused aromatic moiety and R1 is an alkyl or aryl group, are also disclosed, as are oxalyl-containing oxetane resins, oxalyl-containing polyester polyols, and cationic UV curable coating formulations that include oxalyl-containing additives.

Abstract: The present invention provides a photocurable and thermosetting resin composition having excellent surface curability and deep curability, allowing pattern formation with a laser beam having a wavelength of 350 to 410 nm, and being useful as a solder resist for laser direct imaging, the composition including a carboxylic resin (A), an oxime ester-based photopolymerization initiator (B) such as 2-(acetyloxyiminomethyl)thioxanthene-9-one, and another photopolymerization initiator than (B) such as 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, and a sulfur compound (E) such as 2-mercaptobenzothiazole.

Abstract: In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.

Abstract: Provided is a positive resist composition for an electron beam, an X-ray or EUV, including: (A) a resin capable of decomposing by the action of an acid to increase the dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, represented by the following formula (ZI) or (ZII); (C) a basic compound; and (D) an organic solvent, wherein a concentration of all solid contents in said composition is from 1.0 to 4.5 mass %, and a total amount of the compound represented by formula (ZI) or (ZII) is 12 mass % or more based on all solid contents in said composition: wherein symbols in the formulae are defined in the specification.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

Abstract: Provided is a resist composition including a compound having a molecular weight of 1,000 or less and containing at least one sulfonamide group (—SO2NH—).

Abstract: A resin to be added to a resist composition and locally distributed on a resist film surface to hydrophobitize the resist film surface includes a residual monomer in an amount of 1 mass % or less to the resin as a whole in terms of solid content.

Abstract: The present invention provides a polyhydric compound represented by the formula (I): wherein R51 to R67 each independently represent a hydrogen atom etc., at least one selected from the group consisting of R1 to R5 is a group represented by the formula (II): wherein Q1 and Q2 each independently represent a fluorine atom etc., U represents a C1-C20 divalent hydrocarbon group etc., and A+ represents an organic counter ion, and the others are hydrogen atoms or groups represented by the formula (III): wherein X1 to X4 each independently represent a hydrogen atom etc., n represents an integer of 0 to 3, W represents any one of the following groups: Z1 represents a C1-C6 alkyl group etc., and ring Y represents a C3-C20 alicyclic hydrocarbon group, and a chemically amplified resist composition containing the same.

Abstract: The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.

Abstract: The present invention relates to a resist composition with a hardener and a solvent, and a method for forming a pattern using the resist composition. The hardener has a thermal-decomposable core part, and a first photosensitive bond art. The solvent has a low-molecular resin, and a second photosensitive bond part.

Abstract: Embodiments in accordance with the present invention provide waveguide structures and methods of forming such structures where core and laterally adjacent cladding regions are defined. Some embodiments of the present invention provide waveguide structures where core regions are collectively surrounded by laterally adjacent cladding regions and cladding layers and methods of forming such structures.

Abstract: A polymer comprising a structural unit represented by the formula (Ia) or (Ib): wherein R1 represents a hydrogen atom etc., R2 represents a linear, branched chain or cyclic C1-C8 alkyl group, R3 represents a methyl group, n represents an integer of 0 to 14, Z1 represents a single bond etc., k represents an integer of 1 to 4, R4 and R5 each independently represents a hydrogen atom etc., and m represents an integer of 1 to 3, a structural unit represented by the formula (II): wherein R6 and R7 each independently represents a hydrogen atom etc., R8 represents a methyl group, R9 represents a hydrogen atom etc., n? represents an integer of 0 to 12, Z2 represents a single bond etc., k? represents an integer of 1 to 4, R21 and R22 each independently represents a hydrogen atom etc.

Abstract: A polyorganosiloxane compound is modified such that some silicon-bonded hydroxyl groups are substituted with acid labile groups and/or intermolecular or intramolecular crosslinks form with a crosslinking group having a C—O—C linkage. Cured films of a composition comprising the polyorganosiloxane are useful as interlayer dielectric films on TFT substrates.

Abstract: Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support 1 to form a first resist film 2; selectively exposing the first resist film 2 through a first mask pattern, and developing it to form a first resist pattern 3; applying a negative resist composition including an organic solvent (S?) containing an alcohol-based organic solvent on the support 1 that the first resist pattern 3 is formed, thereby forming a second resist film 6; and selectively exposing the second resist film 6 through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern 3.

Abstract: A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.

Abstract: A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound (D1) having a molecular weight of 200 or more, which is represented by general formula (d1) shown below (wherein each of R1 to R3 independently represents a hydrocarbon group which may have a substituent, with the proviso that at least one of R1 to R3 is a polar group-containing hydrocarbon group, at least one of R1 to R3 is a hydrophobic group, and two of R1 to R3 may be bonded to each other to form a ring with the nitrogen atom).

Abstract: The present invention relates to a photosensitive resin composition excellent in pliability, ultraviolet sensitivity for development, developability with an aqueous alkali solution, and storage stability at room temperature and a circuit substrate employing the same. The photosensitive resin composition includes a siloxane-containing polyamic acid resin having structural units respectively represented by the following formulae (1), (2), and (3) and a photopolymerization initiator incorporated therein. The circuit substrate is coated with the photosensitive resin composition.

Abstract: Embodiments in accordance with the present invention provide waveguide structures and methods of forming such structures where core and laterally adjacent cladding regions are defined. Some embodiments of the present invention provide waveguide structures where core regions are collectively surrounded by laterally adjacent cladding regions and cladding layers and methods of forming such structures.

Abstract: A photosensitive conductive paste for transferring including a metal powder, an inorganic material powder, a photosensitive resin and a polymerization initiator, and to be applied onto a surface of a transfer support, comprising an acrylic resin or a rosin-based resin.

Abstract: Polymers comprising a first methacrylate monomer having a pendent spacer between the polymer backbone and an acid-liable acetal group, a second methacrylate monomer having a pendent group including a fluorinated alkyl group and a third methacrylate monomer having a pendent hydrocarbon group. Photoresist formulations include the polymers, a photoacid generator and a casting solvent. Methods of patterning photoresist films formed from the photoresist formulations are characterized by post-exposure bakes at temperatures of about 60° C. or less.

Abstract: A soft mold may be manufactured that is used for forming a pattern. Semiconductor devices and flat panel display devices include a plurality of fine patterns on a substrate. The soft mold may be photo-curable and formed of a material with a hydrophobic property similar to heat-curable molds. The photo-curable mold may be created on a master plate with a resin layer that is removed with a back plate and adhesive layer after embossed or depressed portions are formed on the mold that correspond with embossed or depressed portions of the master plate.

Abstract: A resist composition of the present invention is obtained by dissolving a resin component (A) that displays changed alkali solubility under action of acid and an acid generator component (B) that generates acid upon exposure in an organic solvent (S), wherein the organic solvent (S) includes an aromatic organic solvent (S1). According to the present invention, a resist composition and a method of forming a resist pattern, in which the level of LWR is reduced, can be provided.

Abstract: Polymeric material, containing a latent acid which can be converted to an acid by irradiation by a laser and optionally further ingredients.

Abstract: A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.

Abstract: A photosensitive resin composition comprising: (A) a binder polymer; (B) a photopolymerizable compound that has an ethylenically unsaturated bond; and (C1) a compound represented by general formula (1) below, wherein, at least one R represents a C1-10 alkoxy group or a C1-12 alkyl group; the sum of a, b, and c is 1 to 6; and when the sum of a, b, and c is 2 to 6, each R may be the same as or different from one another.

Abstract: Compounds represented by the following structural formulas can be used as photoacid generators: Such compounds are useful, for example, in fabricating arrays of polymers.

Abstract: In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Abstract: Provided is a positive resist composition using a resin having, in the polymer main chain, a specific acid decomposable structure and further having, in the side chain thereof, several specific acid decomposable groups, satisfactory in an exposure latitude, a focus latitude, and pattern collapse prevention at a high level, and having reduced development defects; and a pattern forming method.

Abstract: Polymers for use in photoresist compositions include a repeat unit having a formula of: wherein Z represents a repeat unit of a polymer backbone; X is a linking group selected from the group consisting of alkylene, arylene, araalkylene, carbonyl, carboxyl, carboxyalkylene, oxy, oxyalkylene, and combinations thereof, and R is selected from the group consisting of hydrogen, alkyl, aryl, and cycloalkyl groups with the proviso that X and R are not part of the same ring system. Also disclosed are processes for patterning a relief image of the photoresist composition, wherein the photoresist composition has an outgassing rate of less than 6.5E+14 molecules/cm2/s.

Abstract: New hardmask compositions comprising non-polymeric, metal-containing nanoparticles dispersed or dissolved in a solvent system and methods of using those compositions as hardmask layers in microelectronic structures are provided. The compositions are photosensitive and capable of being rendered developer soluble upon exposure to radiation. The inventive hardmask layer is patterned simultaneously with the photoresist layer and provides plasma etch resistance for subsequent pattern transfer.

Abstract: An imaging medium comprises a substrate and an imaging composition disposed on the substrate. The imaging composition comprises a matrix, a thermochromic compound dispersed or dissolved in the matrix; and at least two photoinitiators dispersed or dissolved in the matrix.

Abstract: Compositions, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary composition, among others, includes a polymer and a catalytic amount of a negative tone photoinitiator.

Abstract: A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each R1 independently represents hydrogen or a methyl group, R2 represents a phenyl group or a cyclohexyl group, m represents 1 or 2, and n represents an integer of 0 to 2. By virtue of this construction, a resist composition ensuring high resolution, good pattern profile, sufficient depth of focus, little defects after development, and sufficiently high plasma etching resistance is provided.

Abstract: A resist composition that includes a base material component (A), which contains acid-dissociable, dissolution-inhibiting groups and exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), in which the components (A) and (B) are dissolved in the organic solvent (C), wherein the base material component (A) contains a protected form (A1) of a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, the phenolic hydroxyl groups are protected with acid-dissociable, dissolution-inhibiting groups, and the organic solvent (C) comprises an alcohol.

Abstract: The present invention relates to thermoplastic material comprising polymer and at least one polychromic substance, wherein the polychromic substance is a functionalised diacetylene having the formula which has the general structure: X—C?C—C?C—Y—(CO)n-QZ wherein X is H or alkyl, Y is a divalent alkylene group, Q is O, S or NR, R is H or alkyl, and Z is alkyl, and n is 0 or 1. The present invention further relates to a method of processing thermoplastic material to form a plastic article, wherein the method comprises the step of processing the thermoplastic material at a temperature greater than the melt temperature of the thermoplastic, wherein the thermoplastic material comprises polymer and at least one polychromic substance as defined above; and further comprising the step of irradiating the plastic article to colour at least a region of the plastic article.

Abstract: Disclosed is a photosensitive paste comprising a polymerizable monomer and a photopolymerization initiator, wherein the glass transition temperature of the polymerizable monomer is ?10° C. or less. The present paste may be used for creating a fine pattern and prevents residue from remaining in the area where paste should be removed.

Abstract: There are provided a stable chemically amplified photoresist composition that undergoes no change in alkali solubility prior to irradiation, a photoresist laminated product produced by laminating the photoresist composition onto a support, and a manufacturing method for a photoresist pattern and a manufacturing method for a connection terminal that use the photoresist composition and the laminated product. A chemically amplified photoresist composition is provided comprising (a) a resin that undergoes a change in alkali solubility under the action of acid, (b) a compound that generates acid on irradiation, and (c) a corrosion inhibitor.

Abstract: A liquid-type composition for forming a photosensitive polymer complex and a method of preparing a photosensitive polymer complex containing silver nanoparticles using the same are provided. The composition for forming a photosensitive polymer complex includes a multifunctional epoxy resin, a photoacid generator, an organic solvent and a silver compound, or additionally includes a multifunctional acrylate resin and a photoinitiator, or an additive, e.g., a surfactant or a flow improver. This composition is applied, selectively exposed, and developed, thus preparing a photosensitive polymer complex, which contains silver nanoparticles uniformly dispersed and formed in the polymer pattern portion thereof through photo reduction and is therefore improved in terms of physical or chemical properties, e.g., heat resistance and wear resistance.

Abstract: Compounds represented by the following structural formulas can be used as photoacid generators: Such compounds are useful, for example, in fabricating arrays of polymers.

Abstract: A positive resist composition for electron beam, X-ray or EUV includes a compound having a proton acceptor functional group and capable of producing an acid radical upon irradiation with an actinic ray or radiation to reduce or lose the acceptor property or to change the proton acceptor functional group to be acidic, wherein the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.

Abstract: This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n? represents an integer of 1 to 3.

Abstract: The present application relates to a compound of formula A-X—B, where (i) A-X—B form an ionic compound Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula Q-R500—SO3? or (ii) A-X—B form a non-ionic compound Ac-Xc-Bc, where Ai, Bi, Q, R500, Ac, Bc, and Xc are defined herein. The compounds are useful as photoactive materials.

Abstract: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: There are provided a polymer compound which can form a resist pattern with excellent resolution, and a negative resist composition containing the polymer compound and a resist pattern-forming method thereof. The present invention is a polymer compound containing a structural unit (a0) represented by a general formula (a0-1) shown below. (wherein, R represents a hydrogen atom, a halogen atom, an alkyl group or a halogenated alkyl group; and R0 represents an alkyl group containing a hydroxyl group.) Also, the present invention is a negative resist composition, including: an alkali soluble resin component (A), an acid generator component (B) that generates acid upon exposure, and a cross-linking agent (C), wherein the alkali soluble resin component (A) contains a polymer compound (A1) having a structural unit (a0) represented by the general formula (a0-1) shown above.