Abstract: The invention relates to a method of fabricating a compound semiconductor device by forming a first and a second compound semiconductor devices having a plurality of different epitaxial layers on a common semiconductor substrate.
Type:
Grant
Filed:
April 11, 1997
Date of Patent:
March 23, 1999
Assignee:
Electronics And Telecommunications Research Institute
Inventors:
Hyung-Sup Yoon, Jin-Hee Lee, Byung-Sun Park, Chul-Sun Park, Kwang-Eui Pyun
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