Abstract: A semiconductor substrate has a front face with a first dielectric region. A capacitive element includes, on a surface of the first dielectric region at the front face, a stack of layers which include a first conductive region, a second conductive region and a third conductive region. The second conductive region is electrically insulated from the first conductive region by a second dielectric region. The second conductive region is further electrically insulated from the third conductive region by a third dielectric region. The first and third conductive regions form one plate of the capacitive element, and the second conductive region forms another plate of the capacitive element.

Abstract: Semiconductor devices and methods of fabricating the same are provided. The method includes forming on a substrate an active pattern that protrudes from the substrate and extends in one direction; forming on the active pattern a sacrificial gate structure that extends in a direction intersecting the active pattern; forming on a side surface of the sacrificial gate structure a first spacer including a first portion at a lower level than a top surface of the active pattern and a second portion on the first portion, and reducing a thickness of the second portion of the first spacer.

Abstract: A semiconductor memory device including: a substrate including a cell array region and a boundary region; a first recess region at an upper portion of the substrate in the cell array region; a first bit line extending onto the boundary region and crossing the first recess region; a bit line contact in the first recess region and contacting the first bit line; a second bit line spaced apart from the first recess region and adjacent to the first bit line, the second bit line crossing the cell array region and the boundary region; a cell buried insulation pattern between a side surface of the first bit line contact and an inner wall of the first recess region; and a boundary buried insulation pattern covering sidewalls of the first bit line and the second bit line in the boundary region and including a same material as the cell buried insulation pattern.

Abstract: An antifuse OTP memory bit cell comprises a gate electrode, a gate dielectric and source/drain diffusions formed in an active area of a semiconductor substrate. The source/drain diffusions are connected under the gate electrode by lateral diffusion but they don't have to be. If connected, a rectifying contact is created in a programmed bit cell. If unconnected, a rectifying contact or a non-rectifying contact is created in a programmed bit cell. Whether connected or unconnected, the device operates as an OTP memory bit cell without an access transistor.

Abstract: A method for fabricating a semiconductor device includes stacking a first mold layer and a first supporter layer, forming a first supporter pattern by etching the first supporter layer to expose the first mold layer, forming an insulating layer to cover the exposed first mold layer and the first supporter pattern, stacking a second mold layer and a second supporter layer on the insulating layer, forming a contact hole by dry-etching the second supporter layer, the second mold layer, the insulating layer, the first supporter pattern, and the first mold layer, forming a lower electrode within the contact hole, removing the first mold layer, the second mold layer, and the insulating layer, and forming an upper electrode on the lower electrode and the first supporter pattern, wherein, during the dry-etching, dry etching rates of the first supporter pattern and the insulating layer are the same.

Abstract: A method of manufacturing a semiconductor device includes forming a source/drain region in a substrate. An interlevel dielectric layer is formed on the substrate. A conducting plug is formed in the interlevel dielectric layer. The conducting plug is electrically coupled to the source/drain region. A crown oxide is formed on the interlevel dielectric layer. A deep trench is formed in the crown oxide to expose a top wall and a sidewall of the conducting plug. A spacer is formed on the sidewall of the conducting plug. A metal-insulator-metal film is formed in the deep trench.

Abstract: A semiconductor device includes a semiconductor pattern on a semiconductor substrate, a three-dimensional memory array on the semiconductor pattern, and a peripheral interconnection structure between the semiconductor pattern and the semiconductor substrate. The peripheral interconnection structure includes an upper interconnection structure on a lower interconnection structure. The upper interconnection structure includes an upper interconnection and an upper barrier layer. The lower interconnection structure includes a lower interconnection and a lower barrier layer. The upper barrier layer is under a bottom surface of the upper interconnection and does not cover side surfaces of the upper interconnection. The lower barrier layer is under a bottom surface of the lower interconnection and covers side surfaces of the lower interconnection.

Abstract: A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer 30; a plurality of p-type well regions 3; a JFET region JR serving as a part of the drift layer 2 sandwiched between the well regions 3; and a gate insulating film 6 and a gate electrode 7 at least covering the JFET region JR. The gate insulating film 6 and the gate electrode 7 include a different-element-containing region 10 containing an element that is different from elements constituting the gate insulating film 6 and the gate electrode 7.

Abstract: A semiconductor device includes a semiconductor pattern on a semiconductor substrate, a three-dimensional memory array on the semiconductor pattern, and a peripheral interconnection structure between the semiconductor pattern and the semiconductor substrate. The peripheral interconnection structure includes an upper interconnection structure on a lower interconnection structure. The upper interconnection structure includes an upper interconnection and an upper barrier layer. The lower interconnection structure includes a lower interconnection and a lower barrier layer. The upper barrier layer is under a bottom surface of the upper interconnection and does not cover side surfaces of the upper interconnection. The lower barrier layer is under a bottom surface of the lower interconnection and covers side surfaces of the lower interconnection.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include a free layer including a plurality of magnetic layers each having a variable magnetization direction; a tunnel barrier layer formed over the free layer; and a pinned layer formed over the tunnel barrier layer and having a pinned magnetization direction; wherein the plurality of magnetic layers in the free layer includes a first magnetic layer in contact with the tunnel barrier layer and a second magnetic layer not in contact with the tunnel barrier layer and a sum of an exchange field between the first magnetic layer and the second magnetic layer and a stray field generated by the first magnetic layer is larger than or the same as a difference between a uniaxial anisotropy field of the second magnetic layer and a demagnetizing field due to a shape of the second magnetic layer.

Abstract: A semiconductor device includes a first contact plug on a substrate, a first lower electrode disposed on the first contact plug and extended in a thickness direction of the substrate, a first supporter pattern on the first lower electrode and including an upper surface and a lower surface, the upper surface of the first supporter pattern being higher than a top surface of the first lower electrode, a dielectric film on the first lower electrode, the upper surface of the first supporter pattern and the lower surface of the first supporter pattern and an upper electrode disposed on the dielectric film.

Abstract: A method for manufacturing a semiconductor device includes forming a first gate structure on a semiconductor substrate. The first gate structure includes a first gate dielectric layer and a first gate electrode layer formed thereon. The method also includes forming an insulating material layer on the semiconductor substrate, wherein the semiconductor substrate and the first gate structure are covered by the insulating material layer. The method further includes removing a portion of the insulating material layer in a high-voltage element region to form a second gate dielectric layer in the high-voltage element region on the semiconductor substrate, and forming a second gate electrode layer on the second gate dielectric layer.

Abstract: An improvement is achieved in the reliability of a semiconductor device. A structure is obtained in which a first insulating film for a gate insulating film of a memory element is formed over a semiconductor substrate located in a memory region, a second insulating film for a gate insulating film of a lower-breakdown-voltage MISFET is formed over the semiconductor substrate located in a lower-breakdown-voltage MISFET formation region, and a third insulating film for a gate insulating film of a higher-breakdown-voltage MISFET is formed over the semiconductor substrate located in a higher-breakdown-voltage MISFET formation region. Subsequently, a film for gate electrodes is formed and then patterned to form the respective gate electrodes of the memory element, the lower-breakdown-voltage MISFET, and the higher-breakdown-voltage MISFET. The step of forming the second insulating film is performed after the step of forming the first insulating film.

Abstract: A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.

Abstract: An embedded flash memory cell and a corresponding method for fabricating the embedded flash memory cell are disclosed. In some embodiments, the flash memory cell comprises a floating gate that has been formed using a metal gate and local interconnect metal. For some embodiments, the embedded flash memory can be fabricated with little-to-no additional processes than what one would normally employ in fabricating a metal-oxide semiconductor field-effect transistor (MOSFET).

Abstract: A process for forming at least two different doping levels at the surface of a wafer using one photo resist pattern and implantation process step. A resist layer is developed (but not baked) to form a first resist geometry and a plurality of sublithographic resist geometries. The resist layer is baked causing the sublithographic resist geometries to reflow into a continuous second resist geometry having a thickness less that the first resist geometry. A high energy implant implants dopants through the second resist geometry but not through the first resist geometry. A low energy implant is blocked by both the first and second resist geometries.

Abstract: A semiconductor device and method of formation are provided herein. A semiconductor device includes a first active region adjacent a first side of a shallow trench isolation (STI) region. The first active region including a first proximal fin having a first proximal fin height adjacent the STI region, and a first distal fin having a first distal fin height adjacent the first proximal fin, the first proximal fin height less than the first distal fin height. The STI region includes oxide, the oxide having an oxide volume, where the oxide volume is inversely proportional to the first proximal fin height. A method of formation includes forming a first proximal fin with a first proximal fin height less than a first distal fin height of a first distal fin, such that the first proximal fin is situated between the first distal fin and an STI region.

Abstract: Embodiments of present invention provide a method of forming metal resistor. The method includes forming a first and a second structure on top of a semiconductor substrate in a replacement-metal-gate process to have, respectively, a sacrificial gate and spacers adjacent to sidewalls of the sacrificial gate; covering the second structure with an etch-stop mask; replacing the sacrificial gate of the first structure with a replacement metal gate; removing the etch-stop mask to expose the sacrificial gate of the second structure; forming a silicide in the second structure as a metal resistor; and forming contacts to the silicide. In one embodiment, forming the silicide includes siliciding a top portion of the sacrificial gate of the second structure to form the metal resistor. In another embodiment, forming the silicide includes removing the sacrificial gate of the second structure to expose and silicide a channel region underneath thereof.

Abstract: A substrate includes a first region having a first resistivity, for optimizing a field effect transistor, a second region having a second resistivity, for optimizing an npn subcollector of a bipolar transistor device and triple well, a third region having a third resistivity, with a high resistivity for a passive device, a fourth region, substantially without implantation, to provide low perimeter capacitance for devices.

Abstract: The present disclosure provides a method for forming patterns in a semiconductor device. In accordance with some embodiments, the method includes providing a substrate and a patterning-target layer over the substrate; forming one or more mandrel patterns over the patterning-target layer; forming an opening in a resist layer by removing a first mandrel pattern and removing a portion of the resist layer that covers the first mandrel pattern; forming spacers adjacent to sidewalls of a second mandrel pattern; removing the second mandrel pattern to expose the spacers; forming a patch pattern over the spacers and aligned with the opening; etching the patterning-target layer using the patch pattern and the spacers as mask elements to form final patterns; and removing the patch pattern and the spacers to expose the final patterns.

Abstract: A method for manufacturing a semiconductor device including a semiconductor substrate having transistors formed thereon, a first interlayer insulating film formed above the semiconductor substrate and the transistors, a ferroelectric capacitor formed above the first interlayer insulating film, a second interlayer insulating film formed above the first interlayer insulating film and the ferroelectric capacitor, a first metal wiring formed on the second interlayer insulating film, and a protection film formed on an upper surface of the wiring but not on a side surface of the wiring.

Abstract: A semiconductor device includes: a micro CMOS region including a micro CMOS and a micro interconnect that is connected to the micro CMOS; and a high breakdown voltage device region including a high breakdown voltage device that has a breakdown voltage higher than that of the micro CMOS, and drain and source interconnects that are connected to the high breakdown voltage device and have a width greater than that of the micro interconnect in a plan view. In the high breakdown voltage device region, an electrically-isolated dummy interconnect is not provided adjacent to at least the drain interconnect and the source interconnect.

Abstract: A method includes forming a mask layer forming a first photo resist over the mask layer, performing a first patterning step on the first photo resist, and performing a first etching step on the mask layer using the first photo resist as an etching mask. The first photo resist is then removed. The method further includes forming a particle-fixing layer on a top surface and sidewalls of the mask layer, forming a second photo resist over the particle-fixing layer and the mask layer, performing a second patterning step on the second photo resist, and performing a second etching step on the particle-fixing layer and the mask layer using the second photo resist as an etching mask. The particle-fixing layer is etched through. A target layer underlying the mask layer is etched using the mask layer as an etching mask.

Abstract: A semiconductor device is manufactured by forming, on an insulating base material, a first support element having a side face that extends from a surface of the insulating base material, forming a coating of amorphous silicon on the side face of the first support element, filling an aperture disposed between the first support element and a second support element that extends from a surface of the insulating base material with an insulating film, planarizing the insulating film to expose an exposed portion of the coating and a surface of the first support element, and siliciding the amorphous silicon of the coating to form an interconnect.

Abstract: A memory device is described. Generally, the device includes a memory transistor and a metal oxide semiconductor (MOS) logic transistor. The memory transistor includes: a channel region electrically connecting a source region and a drain region, the channel region comprising polysilicon; an oxide-nitride-nitride-oxide (ONNO) stack disposed above the channel region, the ONNO stack comprising a multi-layer charge-trapping region including an oxygen-rich first nitride layer and an oxygen-lean second nitride layer disposed above the first nitride layer; and a gate electrode comprising doped polysilicon formed over a surface of the ONNO stack. The MOS logic transistor includes a gate oxide and a gate electrode comprising doped polysilicon. Other embodiments are also described.

Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least an integrated intermediate-circuit die comprising both a read/write-voltage generator (VR/VW-generator) and an address/data translator (A/D-translator). The intermediate-circuit die performs voltage, address and/or data conversion between the 3D-M core region and the host. Discrete 3D-M support multiple 3D-array dies.

Abstract: An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI) substrate. The method further includes simultaneously forming polysilicon fins from material of the at least one deep trench capacitor and SOI fins from the SOI substrate. The method further includes forming an insulator layer on the polysilicon fins. The method further includes forming gate structures over the SOI fins and the insulator layer on the polysilicon fins.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device including a memory cell transistor having a stacked gate structure including a tunnel insulating film, a charge accumulation layer, a memory cell insulating film, and a control gate electrode film are orderly stacked above a semiconductor substrate, and a capacitor in which a first insulating film, a first electrode film, a second insulating film, a second electrode film, a third insulating film, and a third electrode film are orderly stacked above the semiconductor substrate is provided. A material of the second electrode film is same as the charge accumulation layer of the memory cell transistor. The third electrode film includes a material same as the control gate electrode film of the memory cell transistor.

Abstract: A method comprises implanting ions in a substrate to form a first active region and a second active region, depositing a first dielectric layer over the substrate, forming a first via and a second via in the first dielectric layer, wherein the first via is over the first active region and the second via is over the second active region, depositing a second dielectric layer over the first dielectric layer, forming a third via and a fourth via in the second dielectric layer, wherein the third via is over the first via and the fourth via is over the second via and forming a connector in a metallization layer over the second dielectric layer, wherein the connector is electrically connected to the third via and the fourth via.

Abstract: In a semiconductor device, capacitors may be formed so as to be in direct contact with a transistor by using a shared transistor region, such as a drain region or a source region of closely spaced transistors, as one capacitor electrode, while the other capacitor electrode is provided in the form of a buried electrode in the dielectric material of the contact level. To this end, dielectric material may be deposited so as to reliably form a void, wherein, at any appropriate manufacturing stage, a capacitor dielectric material may be provided so as to separate the capacitor electrodes.

Abstract: Two trenches having different widths are formed in a semiconductor-on-insulator (SOI) substrate. An oxygen-impermeable layer and a fill material layer are formed in the trenches. The fill material layer and the oxygen-impermeable layer are removed from within a first trench. A thermal oxidation is performed to convert semiconductor materials underneath sidewalls of the first trench into an upper thermal oxide portion and a lower thermal oxide portion, while the remaining oxygen-impermeable layer on sidewalls of a second trench prevents oxidation of the semiconductor materials. After formation of a node dielectric on sidewalls of the second trench, a conductive material is deposited to fill the trenches, thereby forming a conductive trench fill portion and an inner electrode, respectively. The upper and lower thermal oxide portions function as components of dielectric material portions that electrically isolate two device regions.

Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It is partitioned into at least two discrete dice: a memory-array die and a peripheral-circuit die. The memory-array die comprises at least a 3D-M array, which is built in a 3-D space. The peripheral-circuit die comprises at least a peripheral-circuit component, which is built on a 2-D plane. At least one peripheral-circuit component of the 3D-M is formed in the peripheral-circuit die instead of in the memory-array die. The array efficiency of the memory-array die can be larger than 70%.

Abstract: The present invention relates to a method of manufacturing sidewall spacers on a memory device. The method comprises forming sidewall spacers on a memory device having a memory array region and at least one peripheral circuit region by forming a first sidewall spacer adjacent to a word line in the memory array region and a second sidewall spacer adjacent to a transistor in the peripheral circuit region. The first sidewall spacer has a first thickness and the second sidewall spacer has a second thickness, wherein the second thickness is greater than the first thickness.

Abstract: A semiconductor memory device which includes a memory cell including two or more sub memory cells is provided. The sub memory cells each including a word line, a bit line, a first capacitor, a second capacitor, and a transistor. In the semiconductor device, the sub memory cells are stacked in the memory cell; a first gate and a second gate are formed with a semiconductor film provided therebetween in the transistor; the first gate and the second gate are connected to the word line; one of a source and a drain of the transistor is connected to the bit line; the other of the source and the drain of the transistor is connected to the first capacitor and the second capacitor; and the first gate and the second gate of the transistor in each sub memory cell overlap with each other and are connected to each other.

Abstract: A high withstand voltage transistor is formed in a high withstand voltage region, and a low withstand voltage transistor is formed in a low withstand voltage region in a method of manufacturing a semiconductor device. The method includes forming a thermal oxide film and a silicon nitride film over the surface of a silicon substrate; forming an opening to the thermal oxide film and the silicon nitride film in each of the high withstand voltage region and the low withstand voltage region; etching the silicon substrate to form trenches; burying a buried oxide film in each of the trenches; removing the thermal oxide film and the silicon nitride film; and forming a thick gate oxide film and a thin oxide film. The depth of a tapered portion of the trench in the low withstand voltage region is shallower than that in the high withstand voltage region.

Abstract: A three-dimensional semiconductor integrated circuit device is provided. A first semiconductor chip includes a solid-state circuit and is smaller than a base, and is stacked on the base. The first chip is buried by a first filling material having approximately the same contour as the base. Buried electrodes that penetrate through the first chip along its thickness direction are formed in the first chip. A second semiconductor chip includes a solid-state circuit and is smaller than the base, and is stacked on the first chip. The second chip is buried by a second filling material having approximately the same contour as the base. Buried electrodes that penetrate through the second chip along its thickness direction are formed in the second chip. The first and second filling materials have processibilities required for forming the buried electrodes and thermal expansion coefficients equivalent to those of the first and second chips, respectively.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. An oxide material layer and a first conductive material layer are sequentially formed on the substrate in the cell and periphery areas. A patterning step is performed to form first and second stacked structures on the substrate respectively in the cell and periphery areas. First and second spacers are formed respectively on sidewalls of the first and second stacked structures. At least two first doped regions are formed in the substrate beside the first stacked structure, and two second doped regions are formed in the substrate beside the second stacked structure. A dielectric layer and a second conductive layer are formed at least on the first stacked structure. The first stacked structure, the dielectric layer, and the second conductive layer in the cell area constitute a charge storage structure.

Abstract: The present invention relates to a method of manufacturing sidewall spacers on a memory device. The method comprises forming sidewall spacers on a memory device having a memory array region and at least one peripheral circuit region by forming a first sidewall spacer adjacent to a word line in the memory array region and a second sidewall spacer adjacent to a transistor in the peripheral circuit region. The first sidewall spacer has a first thickness and the second sidewall spacer has a second thickness, wherein the second thickness is greater than the first thickness.

Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). Its 3D-M arrays are located on at least one 3D-array die, while its read/write-voltage generator (VR/VW-generator) is located on a separate peripheral-circuit die. The VR/VW-generator generates at least a read and/or write voltage to the 3D-array die. A single VR/VW-generator die can support multiple 3D-array dies.

Abstract: In an interlayer insulating film in which contact plugs are embedded, a capacitor element is formed which has electrodes each formed of a metal. Over a substrate, the interlayer insulating film is formed. The interlayer insulating film includes a first insulating film and a second insulating film. In the second insulating film, the first and second contact plugs are formed. The first and second contact plugs extend through the second insulating film to reach first and second gate electrodes. In a surface of the substrate, an isolation film is formed. Within a region overlapping the isolation film in planar view, the capacitor element is formed. The capacitor element includes the lower and upper electrodes. Each of the lower and upper electrodes contains a metal. The lower and upper electrodes of the capacitor element are formed over the first insulating film to be embedded in the second insulating film.

Abstract: The embodiments of the present invention provide a Ge-based NMOS device structure and a method for fabricating the same. By using the method, double dielectric layers of germanium oxide (GeO2) and metal oxide are deposited between the source/drain region and the substrate. The present invention not only reduces the electron Schottky barrier height of metal/Ge contact, but also improves the current switching ratio of the Ge-based Schottky and therefore, it will improve the performance of the Ge-based Schottky NMOS transistor. In addition, the fabrication process is very easy and completely compatible with the silicon CMOS process. As compared with conventional fabrication method, the Ge-based NMOS device structure and the fabrication method in the present invention can easily and effectively improve the performance of the Ge-based Schottky NMOS transistor.

Abstract: An object is to provide a semiconductor device having a novel structure which includes a combination of semiconductor elements with different characteristics and is capable of realizing higher integration. A semiconductor device includes a first transistor, which includes a first channel formation region including a first semiconductor material, and a first gate electrode, and a second transistor, which includes one of a second source electrode and a second drain electrode combined with the first gate electrode, and a second channel formation region including a second semiconductor material and electrically connected to the second source electrode and the second drain electrode.

Abstract: A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width.

Abstract: A sensor array for detecting particles, the sensor array comprising a substrate having a plurality of holes, a plurality of electronic sensor chips each having a sensor active region being sensitive to the presence of particles to be detected, and an electric contacting structure adapted for electrically contacting the plurality of electronic sensor chips, wherein the plurality of electronic sensor chips and/or the electric contacting structure are connected to the substrate in such a manner that the plurality of holes in combination with the plurality of electronic sensor chips and/or the electric contacting structure form a plurality of wells with integrated particle sensors.

Abstract: A highly integrated DRAM is provided. A circuit for driving a memory cell array is formed over a substrate, a bit line is formed thereover, and a semiconductor region, word lines, and a capacitor are formed over the bit line. Since the bit line is located below the semiconductor region, and the word lines and the capacitor are located above the semiconductor region, the degree of freedom of the arrangement of the bit line is high. When an open-bit-line DRAM is formed, an area per memory cell less than or equal to 6F2, or when a special structure is employed for a cell transistor, an area per memory cell less than or equal to 4F2 can be achieved.

Abstract: The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.

Abstract: A method of manufacturing a FinFET non-volatile memory device and a FinFET non-volatile memory device structure. A substrate is provided and a layer of semiconductor material is deposited over the substrate. A hard mask is deposited over the semiconductor material and the structure is patterned to form fins. A charge storage layer is deposited over the structure, including the fins and the portions of it are damaged using an angled ion implantation process. The damaged portions are removed and gate structures are formed on either side of the fin, with only one side having a charge storage layer.

Abstract: The semiconductor device comprises a device isolation region formed in a semiconductor substrate, a lower electrode formed in a device region defined by the device isolation region and formed of an impurity diffused layer, a dielectric film of a thermal oxide film formed on the lower electrode, an upper electrode formed on the dielectric film, an insulation layer formed on the semiconductor substrate, covering the upper electrode, a first conductor plug buried in a first contact hole formed down to the lower electrode, and a second conductor plug buried in a second contact hole formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode is not formed in the device isolation region, whereby the short-circuit between the upper electrode and the lower electrode in the cavity can be prevented.

Abstract: Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is semiconductor device including a first FinFET over a substrate, wherein the first FinFET includes a first set of semiconductor fins. The semiconductor device further includes a first body contact for the first FinFET over the substrate, wherein the first body contact includes a second set of semiconductor fins, and wherein the first body contact is laterally adjacent the first FinFET.

Abstract: A first dielectric layer is formed in an NVM region and a logic region. A charge storage layer is formed over the first dielectric layer and is patterned to form a dummy gate in the logic region and a charge storage structure in the NVM region. A second dielectric layer is formed in the NVM and logic regions which surrounds the charge storage structure and dummy gate. The second dielectric layer is removed from the NVM region while protecting the second dielectric layer in the logic region. The dummy gate is removed, resulting in an opening. A third dielectric layer is formed over the charge storage structure and within the opening, and a gate layer is formed over the third dielectric layer and within the opening, wherein the gate layer forms a control gate layer in the NVM region and the gate layer within the opening forms a logic gate.