Abstract: Various methods for forming an integrated circuit micro-module are described. In one aspect of the invention, layers of an epoxy are sequentially deposited over a substrate to form planarized layers of epoxy over the substrate. The epoxy layers are deposited using spin coating. At least some of the layers are photolithographically patterned after they are deposited and before the next epoxy layer is deposited. Openings are formed in at least some of the patterned epoxy layers after they are patterned and before the next epoxy layer is deposited. An integrated circuit is placed within one of the openings. At least one of the epoxy layers is deposited after the placement of the integrated circuit to cover the integrated circuit. At least one conductive interconnect layer is formed over an associated epoxy layer. Multiple external package contacts are formed.

Abstract: A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

Abstract: An exemplary light emitting diode (LED) assembly includes a cover, a substrate, a LED unit, a first electrode terminal, and a second electrode terminal. The substrate includes a first surface and a second surface on an opposite side of the substrate thereto. The substrate and the cover cooperatively define a cavity. The LED unit is received in the cavity. The first and the second electrode terminals extend from the second surface. The first electrode terminal is electrically connected to one of a positive lead and a negative lead of the LED unit and the second electrode terminal is electrically connected to the other. The second electrode terminal includes a first electrode portion and a second electrode portion symmetrically arranged at opposite sides of the first electrode terminal. The first and the second electrode portions are at least partially symmetrical with respect to the first electrode terminal.

Abstract: An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.

Abstract: An aspect of the present invention inheres in a semiconductor light-emitting element includes a light-emitting functional stacked body including a light-emitting region having a light-emitting function, and including a light extraction surface for extracting light emitted from the light-emitting region, and an upward convex lens disposed on the light extraction surface.

Abstract: In one or more embodiments, a method comprising applying thermo compression to a package assembly including a lid, a die, and a package substrate to assemble the package assembly is disclosed. The method may include assembling the package assembly without coupling a biasing mechanism to the lid. Heat may be applied to a bond head coupled with a pick and place tool. Heat may be applied to a bond stage coupled to a carrier for holding the package assembly during processing. An adhesive applied to the lid or package substrate may be allowed to at least partially cure. The method may further include, in an oven, reflowing a thermal interface material (TIM) coupled to the lid and the die, curing the TIM, and/or curing the adhesive, without using clips.

Abstract: A semiconductor device and a fabrication method thereof are provided. A semiconductor device which is packaged as it includes a semiconductor in which an electronic circuit is disposed, the semiconductor device including: a substrate; a semiconductor chip which has a semiconductor main body having the electronic circuit formed thereon, a pad electrode formed on the semiconductor main body and a projected electrode that is connected to the pad electrode and projected from a surface of the semiconductor main body, wherein the semiconductor chip is mounted on the substrate from the back side of the surface to form the projected electrode thereon; and an insulating layer which is formed as the semiconductor chip buried therein and is polished from a top surface of the insulating layer to a height at which a top of the projected electrode is exposed.

Abstract: According to an aspect of the present invention, there is provided a method for assembling a semiconductor laser device, including: preparing a laser chip including: a substrate; stripe waveguides that are formed on the substrate and that each includes a gain producing area and a window area; electrodes formed on the stripe waveguides; an insulating layer formed on the electrodes; a metal layer formed on the insulating layer; projections arranged at an interval in the window areas; and joining structures connected to the electrodes and formed in the window areas; preparing a submount including: a first solder; second solders arranged at the interval; and submount electrodes connected to the second solders; contacting the laser chip to the submount by fitting the projections with respect to the second solders; and heating the submount and the laser chip.

Abstract: A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

Abstract: According to the present invention, a recess portion is formed in a package substrate which is formed of a multilayer organic substrate having a multilayer wiring, and an LSI chip is accommodated within the recess portion. Wiring traces are formed on the upper surface of a resin which seals the LSI chip connected to the multilayer wiring. The wiring traces are connected to terminal wiring traces connected to the multilayer wiring on the front face of the package substrate and to front-face bump electrodes for external connection on the upper surface of the resin. On the back face side of the package substrate, back-face bump electrodes for external connection are formed and connected to the multilayer wiring.

Abstract: An optical proximity sensor is provided that comprises an infrared light emitter, an infrared light detector, a ceramic housing, a substrate, and a cover or shield. The ceramic housing is mounted on or attached to the substrate, and comprises first and second recesses separated by a light barrier. The cover is mounted over the ceramic housing, the light emitter and the light detector. The infrared light emitter is located within the first recess and mounted on the substrate. The infrared light detector is located within the second recess and mounted on the substrate. The light barrier between the first and second recesses, in conjunction with the remainder of the ceramic housing, the substrate, and the cover or shield substantially attenuates or blocks the transmission of undesired direct, scattered or reflected infrared light between the light emitter and the light detector, and thereby minimizes optical crosstalk and interference between the light emitter and the light detector.

Abstract: A layout method that enables a high power switch mode voltage regulator integrated circuit to generate a large output current and achieve substantially low switching loss is disclosed. The layout method includes forming an array of switching elements on a semiconductor die, each switching element including a plurality of discrete transistors configured to have a substantially reduced ON resistance; and forming a plurality of gate driver circuits on the same die among the switching elements, all using a single metal process. Each gate driver circuit placed substantially close to and dedicated to drive only one switching element so that the gate coupling capacitance resistance product is substantially reduced.

Abstract: The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom of the ceramic green sheet substrate, and firing the ceramic green sheet substrate.

Abstract: In a solid-state imaging device 1 in which a hollow section 9 is formed between a solid-state imaging element 2 and a covering section 4 and an air path 7 extending from the hollow section 9 to the outside is formed in an adhesive section 5, a shielding section 11 for shielding the air path 7 is formed on the air path 7 so as to be positioned on a portion exposed from the covering section 4. This makes it possible to reduce noises occurring in a signal processing section of a semiconductor element while preventing condensation in the covering section for covering the semiconductor element.

Abstract: An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mechanically protective material, at least one of the surfaces (317) being transparent to radiation, and electrically insulative edge surfaces (314) having pads.

Abstract: The invention provides a semiconductor device with high reliability and smaller size and a method of manufacturing the same. A light emitting element as a device element is formed on the front surface of a semiconductor substrate, for example. In detail, an N-type semiconductor layer, a P-type semiconductor layer and pad electrodes are formed on the front surface of the semiconductor substrate. A device element receiving light from the light emitting element (e.g. a photodiode element), for example, and pad electrodes are formed on the front surface of another semiconductor substrate. The semiconductor substrates are attached and integrated with an adhesive layer being interposed therebetween. Wiring layers electrically connected to the pad electrodes and wiring layers electrically connected to the other pad electrodes are formed on the side surface of the semiconductor substrate.

Abstract: Method and apparatus are provided for a silicon substrate optical system for use in an interferometric fiber optic gyroscope (IFOG). A silicon substrate of the silicon substrate optical system is etched to receive optical components, including an input optical fiber, a pump source, a wavelength division multiplier, an isolator, a polarizing isolator, a beam splitting device, a PM tap coupler, a relative intensity noise (RIN) photodiode, a system photodiode, and an output optical fiber. The optical components are mounted on a silicon substrate to reduce the size and cost of the IFOG and increase reliability.

Abstract: Various apparatuses and methods for forming integrated circuit packages are described. One aspect of the invention pertains to a wafer level method for packaging micro-systems. A substrate prefabricated with metal vias can be provided. The substrate can also be made by forming holes in a substrate and electroplating an electrically conductive material into the holes to form the vias. Multiple microsystems are formed on a top surface of the substrate. Each microsystem is formed to include multiple layers of planarizing, photo-imageable epoxy, one or more interconnect layers and an integrated circuit. Each interconnect layer is embedded in an associated epoxy layer. The integrated circuit is positioned within at least an associated epoxy layer. The interconnect layers of the microsystems are formed such that at least some of the interconnect layers are electrically coupled with one or more of the metal vias in the substrate.

Abstract: AN LED chip package body provides an LED chip with a pad-installed surface, a plurality of pads disposed on the pad-installed surface and a rear surface formed opposite the pad-installed surface. The LED chip package body further has a light-reflecting coating disposed on the pad-installed surface of the LED chip and a plurality of pad-exposed holes for exposure of the corresponding pads of the LED chip. The LED chip package body further comprises a light-transparent element disposed on the rear surface of the LED chip and a plurality of conductive projecting blocks. Each of the conductive projecting blocks is disposed on the corresponding pad of the LED chip.

Abstract: The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic device package with enhanced electrical performance and heat-dissipation efficiency are disclosed. The method comprises: providing a substrate having a plurality of vias and a plurality of electronic devices; forming a gluing layer on a surface of the substrate and fixing the electronic devices on the gluing layer, wherein the electronic devices have I/O units aligned with the vias respectively; forming a plurality of fixing layers in the gaps between the electronic devices; trenching a plurality of openings aligned with the vias respectively in the fixing layer; forming a plurality of metallic conductive units in the vias, the openings and part of the surface of the substrate; and forming a passivation layer over the other surface of the substrate.

Abstract: The invention relates to a side-emitting LED package and a manufacturing method thereof. The side-emitting LED package includes a substrate with an electrode formed thereon, and a light source disposed on the substrate and electrically connected to the electrode. The side-emitting LED package also includes a molded part having an upper surface with a center thereof depressed concavely, covering and protecting the substrate and the light source, and a reflection layer covering an entire upper surface of the molded part to reflect light sideward from the molded part which forms a light transmitting surface. The package is not restricted in the shape of the molded part and is not affected by the LED chip size, enabling a compact structure. The invention can also process a substrate by a PCB process, enabling mass-production.

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: A light emitting apparatus comprising a substrate, a first functional chip and a first light emitting component is provided. The substrate, the first functional chip, and the first light emitting component have a plurality of first bumps. In addition, the first functional chip has a plurality of first vias. The first light emitting component and the first functional chip are stacked on the substrate. Hence, the first light emitting component is electrically connected to the first functional chip and the substrate by the first vias and the first bumps.

Abstract: An optical sensor device, according to an embodiment of the present invention, includes a light source and a light detector. The light source includes one or more light emitting elements, and the light detector includes one or more light detecting elements. A first opaque light barrier portion, between the light source and the light detector, is configured to block light from being transmitted directly from the light source to the light detector. A second opaque light barrier portion, extending from the first opaque light barrier portion in a direction towards the light source, is configured to reduce an amount of specular reflections that would occur if a light transmissive cover plate were placed over the optical sensor device.

Abstract: A semiconductor device includes a pair of power chips, an IC chip, a plurality of leads one of which having a die pad on which the power chips are mounted and another one having a die attach portion on which the IC chip is mounted, a resin sheet firmly adhered to one side of the die pad, and a resin casing made by molding operation to encapsulate the power chips, the IC chip and the resin sheet by a resin in such a manner that one surface of the resin sheet opposite the die pad is exposed to the exterior of the resin casing. The resin casing has a groove formed in one surface opposite the exposed surface of the resin sheet, the groove extending parallel to the resin sheet and perpendicular to a runner through which the resin was supplied in the molding operation.

Abstract: An optoelectronic wiring board includes an optical wiring, an electrical wiring, an optical input/output portion, a dummy optical input portion, and a dummy optical waveguide. The optical wiring includes an optical waveguide. The electrical wiring includes an electrically conductive material. The optical input/output portion transmits and detects optical signal with and from the optical waveguide, an optical semiconductor device or an external light guide being disposed on the optoelectronic wiring board. The dummy optical input portion provided adjacent to the optical input/output portion. The dummy optical waveguide is connected to the dummy optical input portion and has an optical end portion which is provided at an end opposite to the dummy optical input portion and absorbs or scatters light which is incident on the dummy optical input portion.

Abstract: A mold structure for packaging LED chips includes a top mold and a bottom mold. The bottom mold is mated with the top mold. The bottom mold has a main flow channel, a plurality of receiving spaces formed beside the main flow channel, a plurality of secondary flow channels for respectively and transversely communicating the receiving spaces with each other, and a plurality of ejection pins penetrating through the bottom mold.

Abstract: A chip coated LED package and a manufacturing method thereof. The chip coated LED package includes a light emitting chip composed of a chip die-attached on a submount and a resin layer uniformly covering an outer surface of the chip die. The chip coated LED package also includes an electrode part electrically connected by metal wires with at least one bump ball exposed through an upper surface of the resin layer. The chip coated LED package further includes a package body having the electrode part and the light emitting chip mounted thereon. The invention improves light efficiency by preventing difference in color temperature according to irradiation angles, increases a yield, miniaturizes the package, and accommodates mass production.

Abstract: A method for producing a light-emitting device comprising: a step of electrically connecting a first electrode provided on one main surface of a semiconductor substrate (element substrate) through a light-emitting layer, and a first lead of a lead frame, so as to oppose each other; a step of electrically connecting a second electrode provided on the rear surface of a surface provided with the light-emitting layer of said element substrate, and a second lead of the above-described lead frame; a step of encapsulating a connecting part of said first electrode and said first lead, and said second electrode, and an electrode part of the second lead, with a transparent resin; and a step of producing a discrete edge by cutting said first lead and the second lead from said lead frame; wherein a film of joining material (joining material film) made of an alloy or a single metal, is formed on the first electrode of said light-emitting element, and a pattern to reduce spreading of said joining material is formed on an e

Abstract: An LED assembly includes a heat sink and a submount. The heat sink has a top mating surface that is solder wettable, and the submount has a bottom mating surface that is solder wettable. The top and the bottom mating surfaces have substantially the same shape and area. The submount is soldered atop the heat sink. During solder reflow, the molten solder causes the submount to align with the top mating surface of the heat sink. The LED assembly may further include a substrate having a top mating surface, and the heat sink may further include a bottom mating surface. The top and bottom mating surfaces have substantially the same shape and area. The heat sink is soldered atop the substrate. During solder reflow, the molten solder causes the heat sink to align with the top mating surface of the substrate.

Abstract: There is provided a method of manufacturing a light emitting diode chip, the method including: providing a light emitting diode chip; forming a phosphor layer on a top of the light emitting diode chip; and forming phosphors of a lattice structure on the phosphor layer by an inkjet process using an ink containing phosphor powder. There is also provided A method of manufacturing a light emitting diode package, the method including: forming a phosphor layer with a predetermined thickness; forming phosphors of a lattice structure on the phosphor layer by an ink jet process using an ink containing phosphor powder; and disposing the phosphor layer having the phosphors of the lattice structure formed thereon on a top of the light emitting diode chip.

Abstract: A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.

Abstract: A module and method of its production in which areal electronic components are formed. The module includes (a) a cover electrode covering the electronic components; (b) a flexibly deformable substrate; (c) a base electrode formed on the substrate; and (d) an optically active layer faulted on the base electrode. The electronic components are formed on the flexibly deformable substrate by the optically active layer, the cover electrode; and the base electrode. The cover electrode projects over the optically active layer at a first side and the base electrode extends beyond the optically active layer at a second side which is oppositely disposed with regards to the first side.

Abstract: A light transmission module has a light transmission path for transmitting light, an optical element including a light emitting and receiving surface for emitting or receiving an optical signal transmitted by the light transmission path, and having a light emitting and receiving point with a function of photoelectric conversion and an electrode pad formed on the light emitting and receiving surface, a substrate mounted with the optical element and an electrical wiring, a bonding wiring for electrically connecting the electrode pad and the electrical wiring, and a sealing portion for sealing the optical element. The electrical wiring and the electrode pad are reverse wire-bonded by the bonding wiring.

Abstract: The invention is to provide a semiconductor light-emitting device package structure. The semiconductor light-emitting device package structure includes a substrate, N sub-mounts and N semiconductor light-emitting die modules, where N is a positive integer lager than or equal to 2. Each of the sub-mounts is embedded on the substrate and exposed partially. Each of the semiconductor light-emitting die modules is mounted on the exposed surface of one of the sub-mounts.

Abstract: An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mechanically protective material, at least one of the surfaces (317) being transparent to radiation, and electrically insulative edge surfaces (314) having pads.

Abstract: A photoelectric composite wiring module includes a circuit substrate, an optical device, an LSI having a driver and an amplifier for the optical device, and a thin film wiring layer having an electrical wiring. The optical device is connected with the LSI by means of the electrical wiring. The optical device is formed on the circuit substrate and optically coupled to an optical waveguide formed in the circuit substrate. The thin film wiring layer is formed on the optical device to ensure that the optical device is electrically connected with the electrical wiring of the thin film wiring layer. The LSI is mounted on and electrically connected with the thin film wiring layer.

Abstract: An LED package (200) includes a housing (24), an LED array (22), a phosphor layer (262) and a transparent packaging layer (264). The LED array is received in the housing, the phosphor layer is uniformly and homogenously formed on the LED array; and the transparent packaging layer packages the LED array and the phosphor layer in the housing. A method for fabricating the LED package is also provided.

Abstract: The invention relates to an optical sensor module (1) for a measuring device. Said module comprises at least one optical sensor (2) including a diode laser (3) having a laser cavity for generating a measuring beam, the diode laser being attached to a substrate (12), converging means (5) (such as a lens). During measuring, such converging means (5) converges the measuring beam in an action plane and converges in the laser cavity the measuring beam radiation that has been back-scattered by an object to generate a self-mixing effect and means for measuring the self-mixing effect. Later means comprise a photo diode (4) and an associated signal processing circuitry. According to an essential aspect of the invention, that the diode laser (3) is configured to emit laser radiation of a wavelength for which the substrate (12) being attached to the diode laser (3) is transparent. This configuration leads to an essentially simple (and therefore cheap) sensor module.

Abstract: A flexible light source device including a substrate, a light emitting device, a molding compound, a dielectric layer, and a metal line is provided. The substrate has a first surface, a second surface opposite to the first surface, and a first opening. The light emitting device is disposed on the first surface of the substrate and covers the first opening. The molding compound is located above the first surface and covers the light emitting device. The dielectric layer is disposed on the second surface and covers a sidewall of the first opening. The dielectric layer has a second opening which exposes part of the light emitting device. The metal line is disposed on the dielectric layer, wherein the metal line is electrically connected to the light emitting device via the second opening in the dielectric layer. Additionally, a fabrication method of the flexible light source device is also provided.

Abstract: Semiconductor light emitting device packaging methods include fabricating a substrate configured to mount a semiconductor light emitting device thereon. The substrate may include a cavity configured to mount the semiconductor light emitting device therein. The semiconductor light emitting device is mounted on the substrate and electrically connected to a contact portion of the substrate. The substrate is liquid injection molded to form an optical element bonded to the substrate over the semiconductor light emitting device. Liquid injection molding may be preceded by applying a soft resin on the electrically connected semiconductor light emitting device in the cavity. Semiconductor light emitting device substrate strips are also provided.

Abstract: A semiconductor package includes a semiconductor die with a plurality of solder bumps formed on bump pads. A substrate has a plurality of contact pads each with an exposed sidewall. A solder resist is disposed opening over at least a portion of each contact pad. The solder bumps are reflowed to metallurgically and electrically connect to the contact pads. Each contact pad is sized according to a design rule defined by SRO+2*SRR?2X, where SRO is the solder resist opening, SRR is a solder registration for the manufacturing process, and X is a function of a thickness of the exposed sidewall of the contact pad. The value of X ranges from 5 to 20 microns. The solder bump wets the exposed sidewall of the contact pad and substantially fills an area adjacent to the exposed sidewall. The contact pad can be made circular, rectangular, or donut-shaped.

Abstract: A system for separating ICs, including a controller, a fixture and a support material supply. The fixture is coupled to a stretchable substrate and the stretchable substrate has a diced semiconductor wafer secured thereto. The diced semiconductor wafer including the plurality of ICs. The fixture being capable of stretching the stretchable substrate so as to form a corresponding plurality of spaces between each of the plurality of ICs.

Abstract: A semiconductor light emitting device package includes a substrate with a core and a copper layer overlying the core. The light emitting device is connected to the substrate directly or indirectly through a wiring substrate. The core of the substrate may be, for example, ceramic, Al2O3, AlN, alumina, silicon nitride, or a printed circuit board. The copper layer may be bonded to the core by a process such as direct bonding of copper or active metal brazing.

Abstract: An optically coupled device includes a light emitting element and a light receiving element which are electrically isolated from each other, and an optical waveguide allowing therethrough transmission of light from the light emitting element to the light receiving element, wherein the optical waveguide is covered with an encapsulation resin containing a light reflective inorganic particle which is typically composed of titanium oxide, the light emitting element and the light receiving element are respectively provided on a base (for example, package terminals), and the entire portion of the outer surface of the optical waveguide, brought into contact with none of the light emitting element, the light receiving element and the base, is covered with the encapsulation resin.

Abstract: A fiber optic transceiver (FOT) module is provided that has a circuit board attached to the FOT leadframe. The circuit board, which is typically a printed circuit board (PCB), provides several advantages over typical FOT module designs in that it provides additional surface area for mounting additional components, enables components to be moved from the motherboard into the module, allows the I/O pin count of the FOT module to be increased without increasing the width or footprint associated with the module, allows bond wires to be shortened, provides improved performance over changes in temperature, allows manufacturing yield to be improved, and enables improvements in signal integrity to be realized.

Abstract: A method for manufacturing a light-emitting diode having a high heat-dissipating efficiency forms a thickened metal into a plurality of supports. The support has a first electrode and a second electrode thereon. The first electrode is formed with a trough. The chip that emits a visible light or an invisible light is adhered in the trough. Then, two leads are welded on the chip. One end of each of the two leads is welded to the first and second electrodes respectively. Various glues are dotted on the chip, adhesive, leads and the support. Finally, the glue is formed into a seat and lens having a packaged chip, adhesive, leads and support by means of a hot press-forming process.

Abstract: A semiconductor die package. Embodiments of the package can include a substrate with solid conductive pins disposed throughout. A semiconductor die can be attached to a surface of the substrate. Electrical connection to the semiconductor die can be provided by the solid conductive pins.

Abstract: A coaxial opto-electronic device used for SFF (Small Form Factor) and SFP (Small Form-Factor pluggable) opto-electronic transceiver module comprises an opto-electronic TO CAN (201) having a cap border (106) at one end, a metal tube (203) disposed around the opto-electronic TO CAN (201), and an isolation ring (202) interposed between the end face of the metal tube (203) and the cap border (106). The coaxial opto-electronic device allows the device's metal case ground to be insulated from the inner data ground, and at the same time, the device outer form is small enough and the size of inner part thereof is enlarged.

Abstract: A photovoltaic system that includes a base; a photovoltaic material having an active area mounted to the base; and a protective covering mounted in the base and covering the photovoltaic material, the protective covering having a surface area larger than that of the active area and including an enhancement is presented. In some embodiments, the enhancement can include a lens area. In some embodiments, the enhancement can include a display area. Some embodiments further include a reflective layer between the protective covering and the photovoltaic material.