Abstract: A method of manufacturing a light-emitting element mounting package including laminating a metallic layer on an insulating layer; forming a light-emitting element mounting area which includes a pair of electroplating films formed by electroplating using the metallic layer as a power supply layer on the metallic layer; forming a light-emitting element mounting portion in which a plurality of wiring portions are separated by predetermined gaps, by removing predetermined portions of the metallic layer, wherein, in the forming the light-emitting element mounting portion, the metallic layer is removed so that one of the pair of electroplating films belongs to one wiring portion of the plurality of wiring portions and another of the pair of electroplating films belongs to another wiring portion adjacent to the one wiring portion.

Abstract: Methods are disclosed including heating an optical element. An optical material is applied to the heated optical element to provide a conformal layer that is cured via the thermal energy in the heated optical element.

Abstract: A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

Abstract: A flexible display device includes a display panel including a plastic substrate where an organic light emitting diode and a thin film transistor are formed; a circuit portion applying a power signal and a data signal, which are supplied from an external portion, to the display panel; and a support member coupled to the plastic substrate, wherein the display panel and the circuit portion are bent around the support member.

Abstract: A method of forming a light-emitting diode (LED) lighting apparatus, including forming an LED on a printed circuit board, and forming a wavelength conversion member on the LED, the wavelength conversion member being spaced apart from the LED. Forming the wavelength conversion member includes transfer molding a wavelength conversion layer on a light-transmitting member, and disposing the wavelength conversion member on the LED, the wavelength conversion layer being disposed between the LED and the light-transmitting member.

Abstract: An encapsulating sheet includes a transparent layer in which a concave portion that is dented from the surface inwardly is formed and a phosphor encapsulating layer which fills the concave portion. The transparent layer is formed from a transparent composition containing a first silicone resin composition and the phosphor encapsulating layer is formed from a phosphor encapsulating composition containing a phosphor and a second silicone resin composition.

Abstract: A light-emitting device includes a case including a first substrate and a sidewall on the first substrate, a light-emitting, element that is mounted on the first substrate in a region surrounded by the sidewall and includes a second substrate and a crystal layer, the light-emitting element being formed rectangular in a plane viewed in a direction perpendicular to the first substrate, and a low-refractive-index layer that is located between the light-emitting element and the sidewall and has a smaller refractive index than the second substrate. A side surface along a longitudinal direction of the second substrate is provided with a tapered portion on a side of the first substrate.

Abstract: An object is to provide a manufacturing method of a semiconductor device in which a defect in characteristics due to a crack occurring in a semiconductor device is reduced. Provision of a crack suppression layer formed of a metal film in the periphery of a semiconductor element makes it possible to suppress a crack occurring from the outer periphery of a substrate and reduce damage to the semiconductor element. In addition, even if the semiconductor device is subjected to physical forces from the outer periphery in separation and transposition steps, progression (growth) of a crack to the semiconductor device can be suppressed by the crack suppression layer.

Abstract: The invention relates to a radiation-emitting component comprising a semiconductor body which emits electromagnetic radiation from a radiation exit surface during operation. The semiconductor body is arranged in a component housing having a cutout. The component further comprises an optical element which is connected to the component housing in a mechanically stable manner by means of a joining layer. The modulus of elasticity of the joining layer is lower than or equal to 30 MPa.

Abstract: This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.

Abstract: An organic light-emitting display apparatus may include a substrate, a display portion formed on the substrate and including a light-emitting area and a non-light-emitting area surrounding the light-emitting area, an encapsulation member arranged to face the substrate with the display portion interposed therebetween, and a reflection member provided on the encapsulation member and including an opening portion aligned with the light-emitting area and a reflection portion surrounding the opening portion and extending to cover the non-light-emitting area, the opening portion comprising an opening. The size of the opening may be smaller than that of the light-emitting area and thus an edge of the light-emitting area may be covered by the reflection portion. The opening portion may have an inverted taper shape, the size of the opening gradually increasing toward the display portion.

Abstract: A light emitting diode (LED) package and a manufacturing method thereof are provided. The LED package includes a substrate including a circuit layer, an LED mounted on the substrate, and a plurality of protruded reflection units disposed in a region excluding an LED mounting region on the substrate and configured to reflect light generated from the LED.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: The invention is directed towards methods and compositions for identifying the amount of ammonium acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of ammonium acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of ammonium acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the ammonium acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

Abstract: A light emitting device 1 according to an embodiment includes a planar alumina substrate, a semiconductor light-emitting element mounted on the alumina substrate, and a phosphor layer. The phosphor layer includes a silicone resin layer provided to cover an upper surface and a side surface of the semiconductor light-emitting element and a phosphor emitting visible light by being excited with light emitted from the semiconductor light-emitting element. The phosphor is dispersed in the silicone resin layer. The alumina substrate has a water absorption rate of 5% or more and 60% or less, and an adhesion strength between the alumina substrate and the silicone resin layer is 1 N or more.

Abstract: Embodiments of the invention include a semiconductor structure comprising a light emitting layer. The semiconductor structure is attached to a support such that the semiconductor structure and the support are mechanically self-supporting. A wavelength converting material extends over the sides of the semiconductor structure and the support, wherein the wavelength converting material has a substantially uniform thickness over the top and sides of the semiconductor structure and the support.

Abstract: An organic light-emitting diode (OLED) display and method of manufacturing the same are disclosed. In one aspect, the OLED display includes a substrate which includes non-emission regions and emission regions, a first electrode which is formed on each of the emission regions of the substrate, an organic light-emitting layer which is formed on the first electrode, a second electrode which is formed on the organic light-emitting layer and the substrate and a passivation layer which is formed on the second electrode. The passivation layer includes a first passivation layer which substantially overlaps the organic light-emitting layer and a second passivation layer which does not overlap the organic light-emitting layer, wherein the refractive index of the first passivation layer is higher than the refractive index of the second passivation layer.

Abstract: The instant disclosure relates to a flip-chip LED package module and a method of manufacturing thereof. The method of manufacturing flip-chip LED package module comprises the following steps. A plurality of LEDs is disposed on a carrier. A packaging process is forming a plurality of transparent lens corresponding to LEDs and binding each other by a wing portion. A separating process is proceeding to form a plurality of flip-chip LED structures without the carrier. A bonding process is proceeding to attach at least one flip-chip LED structure on the circuit board.

Abstract: A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, and a first and second terminal. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the first semiconductor layer. The second conductive pillar is provided on the second semiconductor layer. The sealing unit covers side faces of each of the light emitting unit, the first conductive pillar, and the second conductive pillar. The first terminal is provided on the first conductive pillar and on the sealing unit. The second terminal is provided on the second conductive pillar and on the sealing unit.

Abstract: There is provided a method of manufacturing a light emitting device, the method including: mounting a plurality of light emitting devices on an adhesive layer; arranging upper surfaces of the plurality of light emitting devices to be disposed horizontally using a pressing member; forming a wavelength conversion part covering the plurality of light emitting devices on the adhesive layer by applying a resin including at least one phosphor material; planarizing an upper surface of the wavelength conversion part using the pressing member; and separating the adhesive layer from the plurality of light emitting devices.

Abstract: The present invention relates to light emitting diode (LED) packages and methods of manufacturing the same, and more particularly, to an LED package and a method of manufacturing the same that can reduce a variation of color coordinates of mass-produced LED packages.

Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: The present invention provides manufacturing methods of an LED and a light emitting device. The manufacturing method of the LED includes: providing a substrate; forming on the substrate an LED chip and a second electrode successively; forming a lens structure covering the second electrode; coating the lens structure with fluorescent powder; forming a plurality of evenly distributed contact holes on a backface of the substrate, the contact holes extending through the substrate and to the LED chip; and filling the contact holes with conducting material till the backface of the substrate is covered by the conducting material. The LED has a high luminous efficiency and the manufacturing method is easy to implement.

Abstract: Disclosed is an LED assembly having an omnidirectional light field. The LED assembly has a transparent substrate with first and second surfaces facing to opposite orientations respectively. LED chips are mounted on the first surface and are electrically interconnected by a circuit. A transparent capsule with a phosphor dispersed therein is formed on the first surface and substantially encloses the circuit and the LED chips. First and second electrode plates are formed on the first or second surface, and electrically connected to the LED chips.

Abstract: There is provided a semiconductor light emitting device including: a heat dissipation structure including one or more of materials among a metal, a ceramic, a semiconductor, and a resin; a flexible insulating layer directly in contact with the heat dissipation structure; a conductive layer laminated on the flexible insulating layer; and a light emitting device mounted on the conductive layer, wherein the light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, and the first electrode includes a plurality of conductive vias connected to the first conductivity-type semiconductor layer through the second conductivity-type semiconductor layer and the active layer.

Abstract: A light-emitting device production method includes a positioning step of positioning, in a light-emitting element, a sealing member at least containing a silicone resin semi-cured at a room temperature (T0) by primary cross-linking and a fluorescent material, the silicone resin decreasing in viscosity reversibly in a temperature region between the room temperature (T0) and a temperature lower than a secondary cross-linking temperature (T1), and being totally cured non-reversibly in a temperature region equal to or higher than the secondary cross-linking temperature (T1).

Abstract: A high field of view, low height package and wafer-level packaging process are provided. The top surface of a first wafer has recesses defined by sidewalls, with a reflector, and a floor. The reflector is incident a horizontal light path form an edge-emitting diode on the floor, directing the light path vertically. A second optically diffusing wafer receives the vertically directed light. A vertical ring to surround each recess is wafer-level fabricated on one of the wafers. The vertical ring may have a high aspect ratio to increase light diffusion. The second wafer is connected above the first such that each vertical ring encloses its corresponding recess and such that the light vertically exits the optically diffusing media after spanning the height of the vertical ring. Diode electrical connections are provided for externally controlling the diode. Individual packages are separated by double-dicing the connected wafers between the recesses.

Abstract: A method of LED package includes: forming a P-type through-hole and a N-type through-hole through a substrate; forming a conductive material on the sidewall of said P-type through-hole and N-type through-hole; forming a reflective layer on an upper surface of said substrate; aligning a P-type pad and a N-type pad with said P-type through-hole and said N-type through-hole, respectively, said P-type pad and N-type pad being formed on a first surface of a LED die, wherein said LED die is formed on said upper surface of said substrate; forming electrical connection from said P-type pad and said N-type pad by a copper refilling material within said P-type through-hole and said N-type through-hole; and a P-type terminal pad which positioned under said substrate electrically coupled to said P-type pad via said copper refilling material within said P-type through-hole, and a N-type terminal pad which positioned under said substrate electrically coupled to said N-type pad via said copper refilling material within said

Abstract: A method for manufacturing an LED package includes providing a substrate including an insulating layer inlayed with first and second electrodes. The first and second electrodes define a chip fastening area. An LED chip is fastened on the chip fastening area and electrically connected to the first and second electrodes. A buffer layer including a shelter and grooves is brought to be located over the substrate wherein the shelter covers the chip fastening area and the grooves are located over portions of the substrate beside the first and second electrodes. A reflecting layer is formed in the grooves of the buffer layer by injecting liquid material into the grooves. The buffer layer is removed after the liquid material is solidified and a through hole is defined. An encapsulant is formed to cover the LED chip by injecting the encapsulant into the through hole and the chip fastening area.

Abstract: Methods for producing and placing wavelength converting structures for use in a solid state lighting assembly are disclosed. The wavelength converting structures may take the form of thin film converters including a substrate and one or more thin films of wavelength conversion material.

Abstract: An exemplary method for manufacturing an LED package includes following steps: providing a substrate; forming a reflector on the substrate with a receiving chamber defined in the reflector; providing an LED chip and mounting the LED chip on the substrate wherein the LED chip is received in the receiving chamber; providing a gelatinous phosphor layer and arranging the gelatinous phosphor layer on a top end of the reflector wherein the gelatinous phosphor layer covers the receiving chamber and phosphor powder is evenly distributed in the gelatinous phosphor layer; providing a pressing mold and arranging the pressing mold on a top end of the gelatinous phosphor layer; pressing the pressing mold toward the gelatinous phosphor layer to make the gelatinous phosphor layer fill in the receiving chamber; solidifying the gelatinous phosphor layer.

Abstract: A wafer-scale process is described that simultaneously encapsulates LED dies, forms lenses over the LED dies, and forms a chip scale package for said dies. An array of LED dies (16A,B) are affixed to an adhesive surface of a temporary support structure (14). The support structure is then brought against a mold (32). A single molding material (40), such as transparent silicone, then encapsulates the top and side surfaces of each LED die and forms a lens (44) over the top surface of each LED die. The molded material does not cover bottom surfaces of bottom electrodes (26, 28) of the LED die so as to allow said electrodes to be directly bonded to pads (56, 58) of a substrate (60), such as a PCB. The temporary support substrate is then removed after the molding process, and the molded material is singulated to separate out the packages.

Abstract: A method may be provided for preparing a semiconductor light-emitting device. The method may include: preparing a first wafer in which a semiconductor multi-layered light-emitting structure is disposed on an upper part of an initial substrate; preparing a second wafer which is a supporting substrate; bonding the second wafer on an upper part of the first wafer; separating the initial substrate of the first wafer from a result of the bonding; and fabricating a single-chip by severing a result of the passivation. Other embodiments may be provided.

Abstract: An encapsulating sheet, encapsulating an optical semiconductor element, includes a first layer which contains a phosphor and a second layer which contains a phosphor, is laminated on the first layer, and encapsulates the optical semiconductor element. The ratio of the volume of the phosphor in the first layer to that of the phosphor in the second layer is 90:10 to 55:45.

Abstract: A method of manufacturing a semiconductor light emitting device package includes providing a wafer and forming, on the wafer, a semiconductor laminate comprising a plurality of light emitting devices. Electrodes are formed in respective light emitting device regions of the semiconductor laminate. A curable resin is applied to a surface of the semiconductor laminate on which the electrodes are formed. A support structure is formed for supporting the semiconductor laminate by curing the curable resin. Through holes are formed in the support structure to expose the electrodes therethrough. Connection electrodes are formed in the support structure to be connected to the exposed electrodes.

Abstract: Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities.

Abstract: Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.

Abstract: A display device includes a plurality of pixel areas and a thin film transistor disposed on a substrate. A first light blocking member is disposed on the thin film transistor, and a contact hole is disposed in the first light blocking member to expose a portion of the thin film transistor. A pixel electrode is disposed on the first light blocking member, and connected with the thin film transistor through the contact hole. A second light blocking member is disposed on the pixel electrode overlapping with the contact hole. A roof layer is disposed spaced apart from the pixel electrode with a microcavity interposed therebetween. An injection hole is disposed below the roof layer to expose a portion of the microcavity, and a liquid crystal layer is disposed in the microcavity. An encapsulation layer is disposed on the roof layer covering the injection hole so as to seal the microcavity.

Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.

Abstract: A method of manufacturing a light emitting device includes preparing a light emitting element and a wavelength converting member. The method further includes bonding the light emitting element and the wavelength converting member to each other by surface activated bonding. The light emitting element includes a semiconductor stacked layer portion formed on a substrate. The wavelength converting member includes a support member selected from the group of aluminum oxide, aluminum nitride, YAG without activator, and yttrium oxide. The wavelength converting member further includes a fluorescent material contained in the support member. Bonding the light emitting element and the wavelength converting member entails bonding the substrate and the support member to each other.

Abstract: An optoelectronic semiconductor device is specified, comprising a multiplicity of radiation-emitting semiconductor chips (2), arranged in a matrix-like manner, wherein the semiconductor chips (2) are applied on a common carrier (1), at least one converter element (3) disposed downstream of at least one semiconductor chip (2) for converting electromagnetic radiation emitted by the semiconductor chip (2), at least one scattering element (4) situated downstream of each semiconductor chip (2) and serving for diffusely scattering electromagnetic radiation emitted by the semiconductor chip (2), wherein the scattering element (4) is in direct contact with the converter element (3).

Abstract: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

Abstract: Phosphors fabricated from one or more layers of a naturally lamellar or fabricated lamellar semiconductor that is combined with a substrate. One or more of the layers of the lamellar semiconductor are separated from bulk material. The one or more layers are transformed into a phosphor for use with one or more light-emitting devices for the purpose of modifying the light emitted by the light-emitting device(s). Such transformation can be effected in a variety of ways, such as precise thinning or thickening of the removed layer(s) and/or intercalating one or more species of ions into the layer(s) that function as phosphors.

Abstract: A method of making a flexible organic electronic device includes forming a first portion including a first flexible substrate, wherein the first portion is formed under a first set of conditions to provide a barrier system, separately forming a second portion comprising at least one organic electronic device region deposited upon a second flexible substrate, wherein the second portion is formed under a second set of conditions, different from the first set of conditions, and placing the first portion over the second portion (although not necessarily in contact therewith) to cover the organic electronic device region. The organic electronic device region is not placed in physical contact with another solid material before placing the first portion over the second portion.

Abstract: An LED package includes a substrate, an LED chip arranged on the substrate, and a light transmission layer arranged on a light output path of the LED chip. The substrate includes a first electrode and a second electrode separated and electrically insulated from the first electrode. The LED chip is electrically connected to the first electrode and the second electrode of the substrate. The light transmission layer comprises two parallel transparent plates and a fluorescent layer sandwiched between the two transparent plates. The LED package further includes an encapsulation layer sealing the LED chip therein. The light transmission layer is directly located on a top surface of each LED chip, and the encapsulation layer seals the light transmission layer therein.

Abstract: A solid state lighting package is provided. The package comprising at least one LED element positioned on a top surface of a substrate or a submount capable of absorbing light emitted by the at least one LED element; and a reflective layer, the reflective layer covering at least a portion of the top surface of the substrate or the submount, whereby at least of portion of the light emitted by the LED element is reflected by the reflective layer. A method of manufacturing a solid state lighting package comprising the reflective layer, and a method of increasing the luminous flux thereof, is also provided.

Abstract: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary method of fabricating an electronic device comprises: depositing one or more first conductors; and depositing a plurality of diodes suspended in a mixture of a first solvent and a viscosity modifier. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.

Abstract: An organic light emitting display device includes a substrate, a plurality of organic light emitting elements disposed on the substrate, the plurality of organic light emitting elements including a first organic light emitting element, a second organic light emitting element and a third organic light emitting element, an encapsulating member encapsulating the plurality of organic light emitting elements, a graded functional layers disposed on the encapsulating member, the graded functional layers including convex lenses disposed on pixel regions, and a black matrix disposed on the graded functional layer.

Abstract: A package structure and methods for forming the package structure are provided. The package structure includes a lead frame having a chip bonding area and a shell surrounding a portion of the lead frame. The shell has an inner surface and an outer surface opposite to the inner surface. A cavity is recessed from the inner surface, and the chip bonding area is exposed from the cavity. The structure further includes a light emitting diode chip disposed over the chip bonding area and a first glue layer disposed in the cavity to cover the light emitting diode chip. A separation film is disposed on the first glue layer in the cavity and a second glue layer disposed on the separation film in the cavity. The second glue layer contains a wavelength conversion material and the first glue layer does not contain any wavelength conversion material.