Abstract: There is disclosed a method for fabricating a plasmonic structure for use in a surface plasmon resonance sensor, comprising: coating a surface of an optically clear substrate with a monolayer of microspheres forming a sphere mask; etching the sphere mask to produce an array of microholes; depositing an adsorption layer on the etched sphere mask and the surface of the optically clear substrate; depositing a metallic film on the adsorption layer; and removing the sphere mask. This is also disclosed a plasmonic structure for use in a surface plasmon resonance sensor, comprising: an adsorption layer; and a metallic film deposited on the adsorption layer; wherein the adsorption layer and the metallic film comprises an array of microholes.

Abstract: A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on the wiring layer, the level difference being formed at a boundary between a peripheral region of the first semiconductor wafer and an inside region being on an inside of the peripheral region, and the level difference being formed as a result of a surface over the wiring layer in the peripheral region being formed lower than a surface over the wiring layer in the inside region, and making the surfaces over the wiring layer in the peripheral region and the inside region substantially flush with each other; and opposing and laminating the surfaces over the wiring layer formed in the first semiconductor wafer to a desired surface of a second semiconductor wafer.

Abstract: Disclosed is a light emitting device. The light emitting device includes a substrate including a plurality of lead electrodes; a mold member including a cavity on the substrate; a light emitting chip in the cavity and on at least one of the lead electrodes; a connecting member for electrically connecting at least one of the lead electrodes to the light emitting chip; a resin member in the cavity; a spacer part between the lead electrodes, the spacer part including a material different from materials of the mold member and the resin member; and an adhesive film between the mold member and the substrate.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.

Abstract: Rapid manufacturing processes and designs based on solid luminescent elements form solid state light sources. Direct attach, as well as other LED types, are embedded or affixed to the solid luminescent elements to form low cost solid state light sources.

Abstract: Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode (LED) array apparatus includes a plurality of LEDs mounted to a substrate and an encapsulation covering the LEDs and having a surface texturing configured to extract light, wherein the surface texturing is includes at least one light extracting feature having a diameter larger than two or more of the LEDs.

Abstract: A manufacturing method of a light emitting diode (LED) and a manufacturing method of an LED module are provided. The manufacturing method of the LED may include manufacturing a plurality of LED chips, manufacturing a phosphor pre-form including a plurality of mounting areas for mounting the plurality of LED chips, applying an adhesive inside the phosphor pre-form, mounting each of the plurality of LED chips in each of the plurality of mounting areas, and cutting the phosphor pre-form to which the plurality of LED chips are mounted, into units including individual LED chips.

Abstract: A method for manufacturing an LED module includes following steps: providing a SMT (Surface Mount Technology) apparatus having a CCD (Charge-Coupled Device) image sensor and a nozzle, and providing a PCB and fixing the PCB in the SMT apparatus; providing a plurality of LEDs and mounting the LEDs on the PCB by the SMT apparatus; providing a plurality of lenses each having a plurality of patterned portions formed on an outer face of the lens, and the CCD image sensor imaging the lens and identifying the patterned portions, and then the SMT apparatus obtaining a location of the lens relative to the LED; positioning the lens on the PCB to cover the LED by the SMT apparatus; and fixing the lens on the PCB.

Abstract: A wafer-level method of fabricating an opto-electronic component package, in which the opto-electronic component is mounted to a semiconductor wafer having first and second surfaces on opposite sides of the wafer. The method includes etching vias in the first surface of the semiconductor wafer. The first surface and surfaces in the vias are metallized, and the metal is structured to define a thermal pad and to define the anode and cathode contact pads. A carrier wafer is attached on the side of the semiconductor wafer having the first surface, and the semiconductor wafer is thinned from its second surface to expose the metallization in the vias. Metal is provided on the second surface, and the metal is structured to define a die attach pad and additional anode and cathode pads for the opto-electronic component. The opto-electronic component is mounted on the die attach pad and a protective cover is formed over the opto-electronic component.

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.

Abstract: A light emitting device comprises a substrate including a top surface that is flat, a light emitting diode on the substrate, a lead frame formed on the flat top surface of the substrate. The lead frame includes a circuit with a predetermined pattern to electrically connect to the light emitting diode. A dam part is formed on the substrate and is adjacent to the light emitting diode. A first member is formed on the light emitting diode, the first member including a fluorescent substance to convert a light emission spectrum of light from the light emitting diode. A second member is surrounded by the dam part and is formed on the substrate adjacent to the first member, and a lens covers the first member, the second member and the light emitting diode.

Abstract: Provided is a light emitting device with improved light extracting efficiency and further higher heat releasing performance. A light emitting device includes a planar lead frame having a first lead and a second lead, and includes a light emitting element mounted on the first lead, a resin frame surrounding a periphery of the light emitting element, a first sealing resin filled in the inner side of the resin frame and sealing the light emitting element, and a second sealing resin covering the resin frame and the first sealing resin. Lower end of inner surface of the resin frame is arranged only on the first lead, and at an outside of the resin frame, and the second resin member covers at least a part of the first lead and the second lead. Of the back-surface of the first lead, a region directly under the blight emitting element is exposed.

Abstract: There are provided a phosphor film, a method of manufacturing the same, and a method of coating an LED chip with a phosphor layer. The phosphor film includes: a base film; a phosphor layer formed on the base film and obtained by mixing phosphor particles in a partially cured resin material; and a cover film formed on the phosphor layer to protect the phosphor layer.

Abstract: A method of manufacturing a light-emitting device includes providing a case including an annular sidewall and an LED chip including a chip substrate and a crystal layer and mounted in a region surrounded by the sidewall of the case, and dripping a droplet of an electrically-charged phosphor-containing resin so as to fill a space between the sidewall and the LED chip. The droplet is attracted toward the sidewall by an electrostatic force during the dripping.

Abstract: A batwing beam is produced from an optical emitter having a primary LED lens over a number of LED dies on a package substrate. The LED lens includes a batwing surface formed by rotating a parabolic arc about an end of the parabolic arc over a center of the optical emitter. A center of each of the LED dies is mounted to the package substrate about the focus of a parabola whose arc forms the batwing surface, for example, between about 0.5 to 1.5 of a focal distance from the vertex of the parabola. The batwing surface reflects light from the number of LED dies through total internal reflection (TIR) or through a reflectivity gel coating.

Abstract: The present disclosure involves a method. The method includes providing a substrate having a layer disposed thereon. A plurality of light-emitting devices is attached to the layer. A gel is applied over the substrate. The gel covers the plurality of light-emitting devices. The gel is shaped into a plurality of lenses. The lenses each cover a respective one of the light-emitting devices. The light-emitting devices are separated from one another. The substrate and the layer are removed.

Abstract: A light-emitting diode and method of manufacturing the same, including a flat portion and a mesa structure including an inclined side surface formed by wet etching and a top surface. A protective film and an electrode film sequentially cover a part of the flat portion and at least a part of the mesa structure, the protective film including an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. The electrode film is a continuous film that contacts the surface of the exposed compound semiconductor layer, covers a portion of the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent film is formed between a reflecting layer and a compound semiconductor layer. A through-electrode is provided in a range of the transparent film which overlaps the light emission hole.

Abstract: Disclosed is a method for fabricating a lightweight and thin liquid crystal display (LCD) device, using a supplementary substrate for processing of a thin glass substrate. Inactive gas is sprayed onto the surface of the substrate to thus remove OH groups from the surface, before the thin glass substrate and the supplementary substrate are attached to each other. Under such configuration, the supplementary substrate can be easily separated from a completed liquid crystal panel which is in an attached cell state, without any damages.

Abstract: A method of manufacturing a lead frame for a light-emitting device package and a light-emitting device package are provided. The method of manufacturing a lead frame for a light-emitting device package includes: preparing a base substrate for the lead frame; forming diffusion roughness on the base substrate; and forming a reflective plating layer on the diffusion roughness formed base substrate.

Abstract: A method for manufacturing an LED package structure is disclosed wherein a substrate with a first electrode, a second electrode and a connecting layer is provided. A photoresist coating is provided to cover the substrate, the first electrode, the second electrode and the connecting layer. A portion of the photoresist coating is removed to define a groove corresponding to the connecting layer. A metal layer is formed in the groove to join the connecting layer. A remaining portion of the photoresist coating is removed and a concave is formed and surrounded by the metal layer. A reflective layer is formed on an inside surface of the concave to join the metal layer to form a reflective cup. An LED die is mounted in the reflective cup and electrically connects with the first and second electrodes.

Abstract: A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

Abstract: Solid state lighting (SSL) devices including a plurality of SSL emitters and methods for manufacturing SSL devices are disclosed. Several embodiments of SSL devices in accordance with the technology include a support having a first lead and a second lead, a plurality of individual SSL emitters attached to the support, and a plurality of lenses. Each SSL emitter has a first contact electrically coupled to the first lead of the support and a second contact electrically coupled to the second lead of the support such that the SSL emitters are commonly connected. Each lens has a curved surface and is aligned with a single corresponding SSL emitter.

Abstract: A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

Abstract: The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same.

Abstract: A flexible lighting element is provided, comprising: a first flexible substrate; first and second conductive elements located on the first flexible substrate; a light-emitting element having a positive contact and a negative contact, the positive and negative contacts both being on a first side of the light-emitting element, the light-emitting element being configured to emit light having a selected narrow range of wavelengths; a first conductive connector electrically connecting the first conductive element to the positive contact; a second conductive connector electrically connecting the second conductive element to the negative contact; a second flexible substrate located adjacent to a second surface of the light-emitting element; and an affixing layer located between the first flexible substrate and the second flexible substrate.

Abstract: A solid-state light source has light emitting diodes embedded in a thermally conductive translucent luminescent element. The thermally conductive translucent luminescent element has optically translucent thermal filler and at least one luminescent element in a matrix material. A leadframe is electrically connected to the light emitting diodes. The leadframe distributes heat from the light emitting diodes to the thermally conductive translucent luminescent element. The thermally conductive translucent luminescent element distributes heat from light emitting diodes and the thermally conductive translucent luminescent element.

Abstract: A light engine with a heat sink having a curved recessed cavity that receives a flexed or cupped PCB bearing a plurality of LEDs. Once situated within the cavity and released, the PCB has a tendency to return to its flat state, but flanges or other suitable mechanisms at the ends of the cavity restrain the edges of the PCB and prevent the PCB from returning to its flat state. In this way, the PCB is securely retained within and biased against the cavity by its own forces. As the PCB heats, the PCB expands, further biasing the PCB against the cavity of the heat sink and increasing the thermal conductivity between the two components.

Abstract: The present disclosure involves a method of packaging light-emitting diodes (LEDs). A carrier having a first side and a second opposite the first side is provided. The carrier includes a plurality of conductive interconnect elements. An integrated circuit (IC) die is bonded to the first side of the carrier. A packaging material having light-reflective properties is molded over the first and second sides of the carrier such that the IC die is sealed by the packaging material. A portion of the packaging material is molded into a reflective cap structure. A light-emitting diode (LED) is bonded to the second side of the carrier. Sidewalls of the reflective cap structure circumferentially surround the LED. The LED and the IC die are electrically coupled together through the conductive interconnect elements in the carrier. A lens is then formed over the LED.

Abstract: A method is provided for fabricating an organic light emitting device (OLED) with a spherical back mirror. The method forms a spherical curvature in the substrate and deposits a metal film overlying the spherical curvature, forming a spherical back mirror. A transparent isolation layer is formed overlying the spherical back mirror having a planar top surface. A transparent first electrode layer is formed overlying the isolation layer, and a transparent second electrode layer is formed overlying the first electrode layer. A stack is interposed between the first and second electrode layers. The stack is made up of an electron transport layer adjacent the cathode, a light-emitting (electron injection) layer adjacent to the electron transport layer, a hole transport layer adjacent to the light-emitting layer, and a hole injection layer adjacent to the hole transport layer. The order of the stack layering is dependent which electrode is the anode.

Abstract: The invention relates to a light-emitting diode arrangement having the following: a preferably heat-conductive substrate (2); a printed circuit board (5) which is arranged on the substrate (2), a recess (9) being provided in the printed circuit board (5); and at least one light-emitting diode chip (3) which is arranged on the substrate (2) and in the recess (9), said recess (9) being at least partly filled with at least one matrix material which preferably has a color-converting material (8).

Abstract: The present application discloses a method for making a light-emitting device comprising steps of: providing a light-emitting unit comprising an epitaxial structure; providing a protection layer; connecting the light-emitting unit with the protection layer by a second connecting layer; providing a heat dispersion substrate; and connecting the heat dispersion substrate with the protection layer by a first connecting layer.

Abstract: A light emitting diode (LED) lighting device includes at least one LED assembly comprising a substrate and two or more LEDs configured to generate light spaced apart along the substrate. A cured structural coating is disposed on at least a portion of the LED assembly, wherein the cured structural coating is configured to maintain the LED assembly in a predetermined shape. The substrate of the LED assembly may comprise an elongated and/or flexible substrate.

Abstract: A light emitting diode (LED) and a method for manufacturing the same is disclosed. The disclosed LED comprises a first substrate, an epitaxy layer, and a plurality of bumps. The first substrate is doped with YAG: Ce and is for converting a first light with a first range of wavelength to a second light with a second range of wavelength. The epitaxy layer is disposed on the first substrate and is for emitting the first light. The plurality of bumps are disposed on the epitaxy layer. With the first substrate doped with YAG: Ce, the disclosed LED does not need additional phosphor to convert the first light with the first range of wavelength to the second light with the second range of wavelength.

Abstract: A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

Abstract: The present disclosure provides a light emitting diode (LED) apparatus. The LED apparatus includes an LED emitter having a top surface; and a phosphor feature disposed on the LED emitter. The phosphor feature includes a first phosphor film disposed on the top surface of the LED emitter and having a first dimension defined in a direction parallel to the top surface of the LED emitter; a second phosphor film disposed on the first phosphor film and having a second dimension defined in the direction; and the second dimension is substantially less than the first dimension.

Abstract: An optoelectronic component for mixing electromagnetic radiation having different wavelengths, more particularly in the far field. A first semiconductor chip for emitting electromagnetic radiation in a first spectral range is provided on a carrier. Furthermore, at least one a second semiconductor chip for emitting electromagnetic radiation in a second spectral range is provided on the carrier. The first and second spectral ranges differ from one another. The first semiconductor chip and the second semiconductor chip are arranged in a single package. The first semiconductor chip is optically isolated from the second semiconductor chip by a barrier. The first semiconductor chip and the second semiconductor chip are arranged centosymmetrically about a common center o(Z) of symmetry.

Abstract: A white LED assembly includes a string of series-connected blue LED dice mounted on a substrate. The substrate has a plurality of substrate terminals. A first of the substrate terminals is coupled to be a part of first end node of the string. A second of the substrate terminals is coupled to be a part of an intermediate node of the string. A third of the substrate terminals is coupled to be a part of a second end node of the string. Other substrate terminals may be provided and coupled to be parts of corresponding other intermediate nodes of the string. A single contiguous amount of phosphor covers all the LED dice, but does not cover any of the substrate terminals. In one example, the amount of phosphor contacts the substrate and has a circular periphery. All the LEDs are mounted to the substrate within the circular periphery.

Abstract: A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.

Abstract: A shadow mask assembly includes a securing assembly configured to hold a substrate that is configured to hold a plurality of dies. The securing assembly includes a number of guide pins and a shadow mask comprising holes for the guide pins, said holes allowing the guide pins freedom of motion in one direction. The securing assembly includes a number of embedded magnets configured to secure the shadow mask to the securing assembly.

Abstract: According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.

Abstract: A method of manufacturing a light-emitting diode package is illustrated. A light-emitting diode chip is manufactured. A material layer is formed on side surfaces and a rear surface of the light-emitting diode chip. The material layer is then oxidized to convert the material layer into an oxidized layer to form a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip. The light-emitting diode chip is packaged.

Abstract: A display device includes a substrate, a thin film transistor disposed on the substrate, a pixel electrode connected to the thin film transistor, a common electrode disposed on the pixel electrode and spaced apart from the pixel electrode, where a microcavity is defined between the pixel electrode and the common electrode, and a common electrode cutout is defined in the common electrode; a roof layer disposed on the common electrode, a liquid crystal injection hole formed through the common electrode and the roof layer, where the liquid crystal injection hole exposes a portion of the microcavity, a liquid crystal layer disposed in the microcavity, and an encapsulation layer disposed on the roof layer, where the encapsulation layer covers the liquid crystal injection hole and seals the microcavity.

Abstract: In accordance with certain embodiments, phosphor arrangements are formed via adhering phosphors to activated regions on a substrate and transferring them to a different substrate.

Abstract: A method for producing a light emitting diode device includes the steps of preparing a board mounted with a light emitting diode; preparing a hemispherical lens molding die; preparing a light emitting diode encapsulating material which includes a light emitting diode encapsulating layer and a phosphor layer laminated thereon, and in which both layers are prepared from a resin before final curing; and disposing the light emitting diode encapsulating material between the board and the lens molding die so that the phosphor layer is opposed to the lens molding die to be compressively molded, so that the light emitting diode is directly encapsulated by the hemispherical light emitting diode encapsulating layer and the phosphor layer is disposed on the hemispherical surface thereof.

Abstract: A tunable optical system with hybrid integrated semiconductor laser is provided. The optical system includes a silicon-on-insulator (SOI) substrate; a first optical waveguide tunable comb filter formed at the first side of the SOI substrate; a second optical waveguide tunable comb filter with detuned filter response formed at the first side of the SOI substrate; an etched laser pit at the first side of the SOI substrate; a plurality of spacers formed on the bottom surface of the laser pit near the plane of the first side of the SOI substrate; a plurality of bumping pads formed on the bottom surface of the laser pit near the plane of the first side of the SOI substrate; and a laser chip flip-chip bonded at the first side of the SOI substrate supported by the spacers. Heating sections may be provided on the filters to tune the filters.

Abstract: A method for manufacturing an LED includes steps: providing a base and an LED chip disposed on the base; providing an optical element and disposing the optical element on the base to cover the LED chip; providing a phosphor film and disposing the phosphor film on the optical element; providing a holding plate with capillary holes and disposing the base on the holding plate; providing a mold, wherein the mold and the holding plate cooperatively form a receiving room which receives the base, the LED chip, the optical element and the phosphor film therein; extracting air from the receiving room through the capillary holes of the holding plate, and/or, blowing air toward the phosphor film, whereby the phosphor film is conformably attached onto the optical element; and solidifying the phosphor film on the optical element.

Abstract: Disclosed herein is a semiconductor light emitting device module comprising: a heat transfer member having a cavity; first conductive layer and second conductive layer contacting the heat transfer member via an insulating layer, the first conductive layer and the second conductive layer being electrically separated from each other in accordance with exposure of the insulating layer or exposure of the heat transfer member; and at least one semiconductor light emitting device electrically connected to the first conductive layer and the second conductive layer, the at least one semiconductor light emitting device is thermally contacted an exposed portion of the heat transfer member, wherein the insulating layer has an exposed portion disposed outside the cavity.

Abstract: A fabrication method for a light-emitting element package, the method comprising: providing a high precision wafer level mold module, the high precision wafer level mold module comprising an upper mold and a bottom mold; mounting a substrate with a plurality of light-emitting elements between the upper mold and the bottom mold; filling package materials into the high precision wafer level mold module to obtain package members mounted on the light-emitting elements; and removing the high precision wafer level mold module.

Abstract: A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10?1 Nm and 10?6 Nm, and the ratio of the critical strain energy release rate to the material density factor for the first device may be greater than 0.05 J m/Kg.

Abstract: A method for manufacturing LED packages includes steps: providing a lead frame including many pairs of first, second electrodes and first and second tie bars, the first electrodes and second electrodes each including a main body and an extension electrode protruding outward from the main body; forming many molded bodies to engage with the first and second electrodes, the first and second main bodies being embedded into the molded bodies, and the first and second extension electrodes being exposed out from a periphery of the molded body; preforming two first through grooves at joints where each first electrode meets the first tie bar and two second through grooves at joints where each second electrode meets the second tie bar; disposing LED dies in corresponding receiving cavities; and cutting the molded bodies through the grooves to obtain a plurality of individual LED packages.