Abstract: A method for fabricating the OLED including a color conversion layer using roll-to-roll processing is provided. To elaborate, the method for fabricating an OLED comprising: bonding an OLED and an inorganic phosphor to each other through roll-to-roll processing is provided, wherein the inorganic phosphor is provided as a color conversion layer.

Abstract: A method for manufacturing LED packages includes steps: providing a lead frame including many pairs of first and second electrodes, and first and second tie bars, the first electrodes and second electrodes each including a main body and an extension electrode protruding outward from the main body; forming many molded bodies to engage with the pairs of the first and second electrodes, the first and second main bodies being embedded into the molded bodies, and the first and second extension electrodes being exposed out from a corresponding molded body; preforming many first grooves at a bottom of each molded body; disposing LED dies in the corresponding receiving cavities; and cutting the molded bodies along edges thereof defining the first grooves in a first direction and then along a second direction perpendicular to the first direction to obtain many individual LED packages.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.

Abstract: An optoelectronic semiconductor body has a front face provided for the emission and/or reception of electromagnetic radiation, a rear face which lies opposite the front face and is provided for application onto a support plate, and an active semiconductor layer sequence which in the direction from the rear face to the front face includes a layer of a first conductivity type, an active layer and a layer of a second conductivity type in this sequence.

Abstract: Methods of packaging a semiconductor light emitting device include providing a substrate having the semiconductor light emitting device on a front face thereof. A first optical element is formed from a first material on the front face proximate the semiconductor light emitting device but not covering the semiconductor light emitting device and a second optical element is formed from a second material, different from the first material, over the semiconductor light emitting device and the first optical element. Packaged semiconductor light emitting devices are also provided.

Abstract: A light-emitting diode (LED) element is provided. The LED element includes a substrate, a diode structure layer and several light-guide structures. The light-guide structures are formed on at least one of the substrate and the diode structure layer. Each light-guide structure has an inner sidewall, and several spiral slits formed on the inner side wall.

Abstract: A light emitting apparatus comprises an electrically insulating base member; a pair of electrically conductive pattern portions formed on an upper surface of the base member; at least one light emitting device that is electrically connected to the pair of electrically conductive pattern portions; and a resin portion that surrounds at least a side surface of the at least one light emitting device and partially covers the pair of electrically conductive pattern portions. Each of the pair of electrically conductive pattern portions extends toward a periphery of the base member from resin-covered parts of the electrically conductive pattern portions. At least the resin-covered parts of each of the electrically conductive pattern portions has at least one elongated through hole extending in a direction in which the electrically conductive pattern portions extend from the resin-covered parts, wherein the resin portion contacts the base member via the through holes.

Abstract: Certain example embodiments relate to improved lighting systems and/or methods of making the same. In certain example embodiments, a lighting system includes a glass substrate with one or more apertures. An LED or other light source is disposed at one end of the aperture such that light from the LED directed through the aperture of the glass substrate exits the opposite end of the aperture. Inner surfaces of the aperture have a mirroring material such as silver to reflect the emitted light from the LED. In certain example embodiments, a remote phosphor article or layer is disposed opposite the LED at the other end of the aperture. In certain example embodiment, a lens is disposed in the aperture, between the remote phosphor article and the LED.

Abstract: A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting surface is provided. In a further method step, a barrier frame is formed on the mounting surface, in such a way that the barrier frame laterally encloses a mounting region of the mounting surface. In a further method step, a radiation-emitting or radiation-receiving semiconductor chip is mounted within the mounting region on the mounting surface. The semiconductor chip is potted with a liquid lens material, wherein the lens material is applied to the mounting surface within the mounting region. The lens material is cured. The mounting surface, the barrier frame and the lens material are adapted to one another.

Abstract: An LED device is disclosed in which an LED chip is encapsulated in a encapsulant. The LED device includes an LED chip mounted on a support and electrically connected and an encapsulant encapsulating the LED chip, wherein the encapsulant is a transparent amorphous solid made of a metal oxide, and the solid contains as a major component at least one metal oxide selected from the group consisting of Al2O3, MgO, ZrO, La2O3, CeO, Y2O3, Eu2O3, and ScO.

Abstract: A color light-emitting diode using a blue light component to produce red light and green light is disclosed. A blue-light emitting material is provided between a cathode layer and an anode layer for emitting the blue light component. A light re-emitting layer has a first material in a first diode section arranged to produce a red light component in response to the blue light component, and a second material in a second diode section arranged to produce a green light component in response to the blue light component. A transparent material in a third diode section allows part of the blue light component to transmit through. The anode layer is partitioned into three electrode portions separately located in the three diode sections, so that the red, green and blue light components in the diode sections can be separately controlled.

Abstract: A method for producing luminous means proposes providing a carrier serving as a heat sink, said carrier comprising a planar chip mounting region. The planar chip mounting region is structured for the purpose of producing a first partial region and at least one second partial region. In this case, the first partial region has a solder-repellent property after structuring. Afterward, a solder is applied to the planar chip mounting region, such that said solder wets the at least one second partial region. At least one optoelectronic body is fixed into the at least one second partial region with the solder at the carrier. Finally, contact-connections are formed for the purpose of feeding electrical energy to the optoelectronic luminous body.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: A structure of stacking chips and a method for manufacturing the structure of stacking chips are provided. A wafer with optical chips and a glass substrate with signal processing chips are stacked with each other, and then subjected to ball mounting and die sawing to form the stacked packaging structure. The optical chips and the signal processing chips form the electrical connection on the surface of the glass substrate via the through holes thereof.

Abstract: Reducing effects of thermal expansion in electronic components. An electronic device can include a support, such as a leadframe. An electronic component can be supported by the support. A first flexible layer can cover the electronic component. A second more rigid layer can cover the first layer. The first layer can be made from a material that is more flexible than the second layer thereby creating a mechanical buffer layer between the second layer and the electronic component such that the electronic component is protected from thermal expansion of the second portion caused by changes in temperature. The electronic component can be a laser. The first and second materials can be selected to disperse an optical emission from the optical transmitter.

Abstract: The present disclosure provides a method for forming a light-emitting device and a light-emitting device formed thereby. The method comprises the steps of providing a transparent substrate, forming multiple pairs of electrode pins on the transparent substrate wherein each pair of electrode pins comprises two electrode pins, providing multiple LED dies on the transparent substrate wherein each LED die comprises two electrodes, providing multiple pairs of metal wires wherein each pair of metal wires comprises two metal wires correspondingly connecting the two electrodes of each LED die with the two electrode pins of each pair of electrode pins, and cutting the transparent substrate to form multiple light-emitting devices.

Abstract: A light emitting diode (LED), includes: a substrate; a first electrode connection line disposed on the substrate; a second electrode connection line disposed on the substrate; a first contact metal layer disposed on the first electrode connection line; a second contact metal layer disposed on the second electrode connection line; a light emitting unit disposed on the first contact metal layer and the second contact metal layer; a partition disposed on the substrate and about the light emitting unit; and an encapsulation layer covering the light emitting unit. The encapsulation layer includes a light conversion material.

Abstract: A light emitting device package includes a frame unit including at least two lead frames spaced apart from one another and a light emitting region defined by a distance between the two lead frames; a light emitting device mounted on a surface of the frame unit such that the light emitting device is positioned across the light emitting region, and electrically connected to the lead frames; a wavelength conversion unit provided in the light emitting region, and configured to convert a wavelength of light emitted from the light emitting device and emit the light having the converted wavelength; and a reflective molding unit formed on the surface of the frame unit to cover the light emitting device.

Abstract: A light-emitting device includes a light-emitting element for emitting primary light, and a wavelength conversion unit for absorbing part of the primary light and emitting secondary light having a wavelength longer than that of the primary light, wherein the wavelength conversion unit includes plural kinds of phosphors having light absorption characteristics different from each other, and then at least one kind of phosphor among the plural kinds of phosphors has an absorption characteristic that can absorb the secondary light emitted from at least another kind of phosphor among the plural kinds of phosphors.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip and an optical element. A connecting layer includes a transparent oxide arranged between the semiconductor chip and the optical element. The connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip. A method for fabricating an optoelectronic semiconductor component is furthermore specified.

Abstract: In accordance with certain embodiments, phosphor chips are formed and subsequently attached to light-emitting elements.

Abstract: A method is provided for producing a plurality of optoelectronic components. A number of semiconductor chips are arranged on a connection carrier assembly. A frame assembly with a number of openings is arranged in such a way, relative to the connection carrier assembly, that the semiconductor chips are each arranged in one of the openings. A number of optical elements are positioned in such a way, relative to the frame assembly, that the optical elements cover the openings. The connection carrier assembly with the frame assembly and the optical elements is singulated into the number of optoelectronic components, such that each optoelectronic component includes one connection carrier with at least one optoelectronic semiconductor chip, one frame with at least one opening and at least one optical element.

Abstract: Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide which couples the laser output to a silicon waveguide.

Abstract: A method of manufacturing an encapsulation structure for encapsulating an LED chip includes the following steps: providing a first encapsulation defining a receiving room for receiving the LED chip therein and a second encapsulation defining a receiving space for receiving the first encapsulation therein; providing a mounting tablet defining an entrance therein, mounting the first encapsulation and the second encapsulation on the mounting tablet with a clearance defined therebetween communicating with the entrance; injecting a liquid transparent resin with phosphorous compounds disturbed therein into the clearance via the entrance; and solidifying the liquid transparent resin to form a transparent resin layer interconnecting the first encapsulation and the second encapsulation.

Abstract: An LED substrate structure has a substrate and a conducting portion. The substrate has a bottom surface and two opposite first lateral surfaces connected with the bottom surface. The bottom surface has the conducting portion formed thereon, and the conducting portion has a first cutting segment located on a contact border defined between one of the two first lateral surfaces and the bottom surface. The conducting portion further has an expansion region connected with the first cutting segment. The length of the first cutting segment is shorter than any segment taken on the expansion region parallel thereto.

Abstract: An optical device processing method including a protective layer includes forming a protective layer of an insulator on the front side of an optical device wafer so as to insulate at least the electrodes from each other, forming a groove on the front side of the wafer along each division line, forming a reflective film on the front side of the wafer to thereby form the reflective film on at least the side surfaces of the groove, removing the protective layer formed on the electrodes on the front side of the wafer to thereby expose the electrodes, and grinding a back side of the wafer to thereby reduce the thickness of the wafer to the finished thickness until the groove is exposed to the back side of the wafer to divide the wafer into individual optical device chips.

Abstract: Disclosed herein is a light emitting device including: a substrate; a light emitting diode (LED) chip disposed on the substrate; and a phosphor sheet disposed on an upper portion of the LED chip and including alignment members formed on a lower surface thereof. The alignment members contact the LED chip, such that the phosphor sheet is aligned with the LED chip.

Abstract: An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each optical device having electrodes formed on the front side. A processing method includes: forming a groove on a back side of the wafer along each division line so as to form a slightly remaining portion on the front side of the wafer along each division line; forming a reflective film on the back side of the wafer to thereby form the reflective film on at least side surfaces of the groove; grinding the back side of the wafer to thereby reduce the thickness of the wafer to a finished thickness; and cutting the slightly remaining portion along each division line to thereby divide the wafer into individual optical device chips.

Abstract: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Abstract: The present application provides for a method for manufacturing a light emitting apparatus. The method includes mounting light emitting elements on a substrate and applying a resin containing phosphors to form wavelength conversion units covering the light emitting elements on the substrate. Portions of the wavelength conversion unit are removed between the light emitting elements. Regions of the substrate are diced, from which the wavelength conversion unit have been removed, to separate the plurality light emitting elements into individual light emitting elements.

Abstract: Light emitter devices for light emitting diodes (LED chips) and related methods are disclosed. In one embodiment a light emitter device includes a substrate and a chip on board (COB) array of LED chips disposed over the substrate. A layer having wavelength conversion material provided therein is disposed over the array of LED chips for forming a light emitting surface from which light is emitted upon activation of the LED chips. In some aspects, the wavelength conversion material includes phosphoric or lumiphoric material that is settled and/or more densely concentrated within one or more predetermined portions of the layer. In some aspects, the devices and methods provided herein can comprise a lumen density of approximately 30 lm/mm2 or greater.

Abstract: A light-emitting module includes a first conductive lead frame, a second conductive lead frame physically separated from the first conductive lead frame, a protective plastic layer, a reflective plastic layer, and a light-emitting die. The protective plastic layer surrounds the first and second conductive lead frames, and an accommodating space s defined by the protective plastic layer, and the first and second conductive lead frames. Inner surfaces of the first and second conductive lead frames are exposed through the accommodating space. The accommodating space further includes a die-mounting region. The reflective plastic layer is formed on the inner surfaces within the accommodating space. The light-emitting die is located on the die-mounting region and is electrically connected to the first and second conductive lead frames. The light-emitting die protrudes from the reflective plastic layer.

Abstract: An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.

Abstract: There is provided a display device including a plurality of light emitting elements over a first substrate, and an anti-reflection member configured to prevent reflection of light from a first substrate side at a boundary portion in a pixel region corresponding to each of the light emitting elements, the anti-reflection member being on a second substrate side where a second substrate faces the first substrate.

Abstract: Light emitting devices include a Light Emitting Diode (LED) chip having an anode contact and a cathode contact on a face thereof. A solder mask extends from the gap between the contacts onto one or both of the contacts. The LED chip may be mounted on a printed circuit board without an intervening submount. Related fabrication methods are also described.

Abstract: A method for manufacturing an LED package includes the steps: providing a lead frame including many pairs of first and second electrodes, the first electrodes and second electrodes each including a main body, an extension electrode, and a supporting branch, the first electrodes in a column and the second electrodes in a column being linearly connected by a first and second tie bars, respectively; forming many molded bodies to correspond to the pairs of the first and second electrodes, the first and second main bodies being embedded into the molded bodies, the first and second extension electrodes being exposed out from a periphery of the molded body, bottoms of the first and second supporting branches being exposed at a bottom of the molded body; disposing LED dies in corresponding receiving cavities; and cutting the first and second tie bars and the molded bodies and the lead frame.

Abstract: An LED package structure comprises a substrate, a first electrically conductive pattern, a second electrically conductive pattern, at least one electrically conductive element, and an LED chip. The substrate has a first surface and a second surface opposite to the first surface. The first electrically conductive pattern is disposed on the first surface. The second electrically conductive pattern is disposed on the second surface. The at least one electrically conductive element traverses the fluorescent substrate and connects the first and second electrically conductive patterns. The LED chip is disposed on the second surface and has a light extraction surface that connects the second electrically conductive pattern. The LED chip is electrically coupled to the first electrically conductive pattern via the at least one electrically conductive element.

Abstract: A method for manufacturing a light emitting device package is provided. In the method, a growth substrate including a plurality of light emitting devices disposed on a top surface of the growth substrate is prepared. A first package substrate having a bonding pattern corresponding to a portion of the plurality of light emitting devices is prepared, and the bonding pattern is disposed on a top surface of the first package substrate. The portion of the plurality of light emitting devices and the bonding pattern are bonded by disposing the top surface of the growth substrate to face the top surface of the first package substrate. The portion of the plurality of light emitting devices is separated from the growth substrate. The portion of the plurality of light emitting devices joined to the bonding pattern is packaged.

Abstract: The semiconductor laser device of the present invention has a conductive first heatsink member, a conductive first adhesive, and a semiconductor laser element. The first adhesive is disposed on the first heatsink member, and the semiconductor laser element is disposed on the first adhesive. The first adhesive reaches an upper part of the side surface of the first heatsink member under the laser emission surface for laser emission of the semiconductor laser element. The structure further improves heat dissipation of the semiconductor laser element; at the same time, it is effective in obtaining laser light from the semiconductor laser element.

Abstract: An LED board structure includes a light-pervious substrate having a plurality of light-pervious areas formed thereon, a plurality of patterned conductive traces arranged on the light-pervious substrate at locations other than the light-pervious areas, and a plurality of LEDs correspondingly arranged on the light-pervious areas and respectively having two electrode terminals electrically connected to the patterned conductive traces. With these arrangements, light emitted from the LEDs not only projects forward, but also backwardly passes through the light-pervious areas, so that both sides of the LED board structure are illuminated by the LEDs. A method of manufacturing an LED board structure is also disclosed.

Abstract: An LED array includes three or more strings of bare LEDs mounted in close proximity to each other on a substrate. The strings of LEDs emit light of one or more wavelengths of blue, indigo and/or violet light, with peak wavelengths that are less than 490 nm. Luminescent materials deposited on each of the LED chips in the array emit light of different wavelength ranges that are of longer wavelengths than and in response to light emissions from the LED chips. A control circuit applies currents to the strings of LEDs, causing the LEDs in the strings to emit light, which causes the luminescent materials to emit light. A user interface enables users to control the currents applied by the control circuit to the strings of LEDs to achieve a Correlated Color Temperature (CCT) value and hue that are desired by users, with CIE chromaticity coordinates that lie on, or near to the black body radiation curve.

Abstract: The present invention relates to a GaN type LED device and a method of manufacturing the same. More particularly, there are provided a GaN type LED device including an LED chip; and a submount eutectic-bonded with the LED chip through an adhesive layer, wherein the adhesive layer is configured by soldering a plurality of metallic layers in which a first metallic layer and a second metallic layer are sequentially stacked, and the second metallic layer is formed in a paste form. Further, the present invention provides a method of manufacturing the GaN type LED device.

Abstract: An LED package includes a lens, an LED chip securely received and engaged in the lens, and a base with an electrode assembly thereon. A bottom surface of the LED chip is bare. The lens is mounted on the base and the bottom surface of the LED chip electrically and mechanically connects with the electrode assembly.

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract: A light transmission path package includes first and sealing surface adjustment members, which are arranged with facing each other by way of a light emitting/receiving element on a lead frame substrate, having a length in a normal direction of the substrate surface from the substrate surface of H2; wherein a relational expression H3<H2<H1 is satisfied where the height H1 is a distance in the normal line direction from the substrate surface to a surface of the light guide facing the substrate surface, and the height H3 is a length in the normal line direction from the substrate surface in the light emitting/receiving element. The sealing resin is filled so as to cover the first and second sealing surface adjustment members and so as not to come in contact with the light transmission path.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a body; first and second electrode layers on the body; a light emitting device electrically connected to the first and second electrode layers on the body; a luminescent layer on the light emitting device; and an encapsulant layer including particles on the luminescent layer, wherein an effective refractive index of the encapsulant layer has a deviation of 10% or less with respect to an effective refractive index of the luminescent layer.

Abstract: An LED encapsulation resin body disclosed in the present application includes: a phosphor; a heat resistance material arranged on, or in the vicinity of, a surface of the phosphor; and a silicone resin in which the phosphor with the heat resistance material arranged thereon is dispersed.

Abstract: A wafer-level optical deflector assembly is formed on a front surface side of a wafer. Then, the front surface side of the wafer is etched by using elements of the wafer-level optical deflector assembly, to form a front-side dicing street. Then, a transparent substrate with an inside cavity is adhered to the front surface side of the wafer. Then, a second etching mask is formed on a back surface side of the wafer. Then, the back surface side of the wafer is etched to create a back-side dicing street. Then, an adhesive sheet with a ring-shaped rim is adhered to the back surface side of the wafer. Then, the transparent substrate is removed. Finally, the ring-shaped rim is expanded to widen the front-side dicing street and the back-side dicing street to pick up optical deflectors one by one from the wafer.

Abstract: In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.