Abstract: A graphic data of a first wiring in a first area of a semiconductor wafer may be extracted, which may correspond to a semiconductor chip forming area. The first area may be surrounded by a scribed area of the semiconductor wafer. The first area includes a second area bounded with the scribed area. The second area has a second distance from a boundary between the semiconductor chip forming area and the scribed area to a boundary between the first area and the second area. A first dummy pattern in the first area is laid out to have at least a first distance from the first wiring. A second dummy pattern in the second area is laid out to have at least the first distance from the first wiring and at least a third distance from the first dummy pattern.

Abstract: A submount on which a semiconductor device is mounted and which is mounted on a base made of metal, the submount including: a substrate; a first coating layer formed on a first surface of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate; and a second coating layer formed on a second surface, positioned on a side opposite to the first surface, of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate, in which a coating area of the second coating layer is smaller than a coating area of the first coating layer.

Abstract: A semiconductor device includes a plurality of switching elements electrically connected in parallel with each other, a control unit that outputs a control signal for controlling a current supplied to each of the switching elements, and a temperature estimation unit that estimates a temperature difference between the switching elements. When an estimated temperature difference becomes equal to or higher than a predetermined threshold temperature, the control unit shifts an operation mode to a stop mode for stopping driving of a switching element having a temperature higher than the other.

Abstract: Disclosed is a pellicle for extreme ultraviolet (EUV) lithography. The pellicle may include: a support layer pattern which is formed by etching a support layer; a pellicle layer which is formed on the support layer pattern; and an etching stop layer pattern which is formed between the support layer pattern and the pellicle layer and formed by etching an etching stop layer of stopping etching when the support layer is etched. Thus, there is provided a pellicle for EUV photomask, which maintains high transmittance with the minimum thickness for EUV exposure light, and is excellent in mechanical strength and thermal characteristics.

Abstract: Implementations of methods of singulating a plurality of die included in a substrate may include exposing a substrate material of a substrate in a die street through removing a metal layer in the die street coupled to the substrate, wherein only a portion of the substrate material in the die street is removed, and singulating a plurality of die included in the substrate through plasma etching the exposed substrate material of the substrate in the die street.

Abstract: A semiconductor wafer processing method includes a step of forming a laser processed groove on the front side of a semiconductor wafer along each division line, a step of forming a mask layer on a protective layer except in an area above a metal electrode formed in each device on the front side of the wafer, a first etching step of etching the protective layer by using the mask layer to expose each metal electrode, a second etching step of etching the inner surface of each laser processed groove by using the mask layer used in the first etching step, thereby expanding each laser processed groove, and a dividing step of dividing the wafer along each laser processed groove expanded in the second etching step.

Abstract: A thermally reversible adhesive comprising a) a copolymer of i) a conjugated diene acrylate or methacrylate and ii) at least one acrylic monomer; and b) a bismaleimide crosslinking agent, a process for its preparation, and various end uses, are disclosed.

Abstract: A method of processing a wafer having on one side a device area with a plurality of devices includes providing a protective film and applying the protective film to the device side of the wafer or to the other side of the wafer, so that at least a central area of a front surface of the protective film is in direct contact with the device side or the other side of the wafer. The protective film is attached to the device side or to other side of the wafer, so that at least a part of a peripheral portion of the protective film is attached to at least a part of a lateral edge of the wafer along the entire circumference of the wafer. The lateral edge of the wafer extends from the device side of the wafer to the other side of the wafer.

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

Abstract: A wafer processing system includes a laser processing apparatus, a grinding apparatus, a tape sticking apparatus, a first cassette placement part, a second cassette placement part, a conveying unit that conveys a wafer, and a controller that controls the respective constituent elements. The controller includes a first processing program instructing section that conveys a wafer unloaded from a first cassette in order of the laser processing apparatus, the grinding apparatus, the tape sticking apparatus, and a second cassette and sequentially carries out processing by each apparatus for the one wafer, and a second processing program instructing section that conveys the wafer unloaded from the first cassette in order of the grinding apparatus, the laser processing apparatus, the tape sticking apparatus, and the second cassette and sequentially carries out processing by each apparatus for the one wafer.

Abstract: A processing method for a wafer having a plurality of streets inclined at 45° relative to a cleavage direction including a laser processing step of positioning a focusing point of a laser beam with a wavelength as to be transmitted through the wafer in the inside of the wafer, and applying the laser beam along the streets to form a plurality of modified layers, overlapping with one another in the wafer thickness direction, inside the wafer along each of the streets. In the laser processing step, m modified layers (m is a natural number not less than n·?2) are formed overlapping with one another in the wafer thickness direction, where n (n is a natural number) is the number of modified layers needing to be formed overlapping with one another in a wafer thickness direction when dividing a wafer having a plurality of streets parallel to a cleavage direction.

Abstract: A controller of a laser processing apparatus includes: a storage section that stores processing conditions for forming modified layers along division lines of a wafer; and a processing line calculation section that displays a position at which the modified layer is planned to be formed and which is stored as the processing condition, on a display panel as a processing line. The processing line calculation section displays the processing line on the display panel superimposed on a first division line, in a region in which a start point or end point of the first division line is connected to a second division line. A start point or end point of a first modified layer formed along the first division line is permitted to be re-set on the display panel so as not to interfere with a second modified layer formed along the second division line.

Abstract: A wafer processing method includes a modified layer forming step of forming a modified layer along a planned dividing line within a wafer and a dividing step of dividing the wafer along the planned dividing line with the modified layer as a starting point by applying a force to the wafer. The modified layer forming step includes a forward path modified layer forming step, a backward path modified layer forming step, and a phase shift mask reversing step of reversing a phase shift mask so as to reverse phase distribution of a laser beam applied to the wafer in an X-axis direction after the forward path modified layer forming step and before the backward path modified layer forming step, or after the backward path modified layer forming step and before the forward path modified layer forming step.

Abstract: A method of processing a plate-shaped workpiece that includes layered bodies containing metal which are formed in superposed relation to projected dicing lines includes the steps of holding the workpiece on a first holding table such that the layered bodies are exposed, thereafter, cutting the workpiece along the projected dicing lines with a cutting blade to form cut grooves that sever the layered bodies, thereafter, holding the workpiece on a second holding table such that a mask disposed in areas that are exclusive of the projected dicing lines is exposed, and thereafter, performing dry etching on the workpiece through the mask to sever the workpiece along the projected dicing lines. The step of cutting the workpiece includes the step of cutting the workpiece while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

Abstract: Methods of dicing semiconductor wafers are described. In an example, a method of dicing a semiconductor wafer having integrated circuits thereon involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a multiple pass laser scribing process to provide a patterned mask with gaps exposing regions of the semiconductor wafer between the integrated circuits, the multiple pass laser scribing process including a first pass along a first edge scribing path, a second pass along a center scribing path, a third pass along a second edge scribing path, a fourth pass along the second edge scribing path, a fifth pass along the center scribing path, and a sixth pass along the first edge scribing path. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract: A processing method for a substrate having a metal exposed and having cutting lines of a predetermined width set thereon includes: a structural body disposing step of disposing two structural bodies on the metal along respective edges in regard of the width direction of the cutting line, with a gap corresponding to the width therebetween; and a cutting step of causing a cutting blade to cut into the substrate from between the two structural bodies to cut the substrate along the cutting lines, after the structural body disposing step is carried out.

Abstract: A manufacturing method of a semiconductor package includes locating a plurality of semiconductor packages on a substrate, forming a resin insulating layer covering the plurality of semiconductor devices, forming grooves, in the resin insulating layer, enclosing each of the plurality of semiconductor devices and reaching the substrate, and irradiating the substrate with laser light in positional correspondence with the grooves to separate the plurality of semiconductor devices from each other.

Abstract: With a method of cutting a tube glass (G1) according to the present invention, the tube glass (G1) is irradiated with laser light (L) having a focal point (F) adjusted to an inside of the tube glass (G1), to thereby form an inner crack region (C1) including one or more cracks in a portion of the tube glass (G1) in a circumferential direction of the tube glass (G1) through multiphoton absorption that occurs in an irradiation region of the laser light (L). Then, in the tube glass (G1), there is generated a stress that urges the one or more cracks in the inner crack region (C1) to propagate in the circumferential direction of the tube glass (G1) to cause the one or more cracks to propagate throughout an entire circumference of the tube glass (G1), to thereby cut the tube glass (G1).

Abstract: A graphic data of a first wiring in a first area of a semiconductor wafer may be extracted, which may correspond to a semiconductor chip forming area. The first area may be surrounded by a scribed area of the semiconductor wafer. The first area includes a second area bounded with the scribed area. The second area has a second distance from a boundary between the semiconductor chip forming area and the scribed area to a boundary between the first area and the second area. A first dummy pattern in the first area is laid out to have at least a first distance from the first wiring. A second dummy pattern in the second area is laid out to have at least the first distance from the first wiring and at least a third distance from the first dummy pattern.

Abstract: A laser system is configured to produce a distribution of self-focus damage volumes through the thickness of a substrate. A laser of the laser system produces a laser beam, and an optical assembly receives the laser beam and emits a conditioned laser beam having a geometric focal region. Placing the substrate in the path of the conditioned beam shifts the focal region to an effective focal region. The optical assembly and/or optical elements thereof can be configured such that the distribution of self-focus damage volumes is uniform over the thickness of the substrate by accounting for the non-linear effects of the substrate on the light that propagates through the substrate.

Abstract: A method of processing nano- and micro-pores includes washing a substrate and cleaning a surface of the substrate; spin-coating photoresist, exposing the substrate and developing to form the substrate with a pattern; 3. depositing micro-nano metal particles on the surface of the substrate; wherein the micro-nano metal particles are centered on a magnetic core; and the surface of the magnetic core is plated with a metal nano-particle coating composed of a plurality of gold, silver or aluminum nanoparticles; removing the photoresist, and maintaining dot arrays of the micro-nano metal particles; applying laser irradiation and a strong uniform magnetic field on the substrate, so that the substrate is processed to form processed structures; and after the processed structures being formed into nano-/micro-pores with targeted pore size, shape and depth, stopping the laser irradiation and removing the strong uniform magnetic field.

Abstract: A method of processing a semiconductor wafer, in which a mask is formed: by cutting, with CO2 laser, a portion corresponding to a street, out of a temporary-adhesive of a surface protective tape to protect on a patterned face; carrying out dicing with SF6 plasma; and carrying out ashing, by removing a layer of the temporary-adhesive, with O2 plasma; a semiconductor chip; and a surface protective tape.

Abstract: An electrostatic chuck table includes a plate-shaped base portion capable of transmitting a laser beam to be applied to a workpiece and an electrostatic attraction electrode portion capable of transmitting the laser beam. The laser beam has a transmission wavelength to the workpiece. The base portion has a first surface and a second surface opposite to the first surface. The electrode portion is formed on the first surface of the base portion. A method for using the electrostatic chuck table includes a workpiece holding step of applying a voltage to the electrode portion formed on the first surface to thereby electrostatically hold the workpiece on the second surface, and a modified layer forming step of applying the laser beam through the first surface to a predetermined position inside the workpiece held on the second surface to thereby form a modified layer inside the workpiece.

Abstract: A method of manufacturing a semiconductor chip according to an embodiment includes forming on a semiconductor substrate a plurality of etching masks each including a protection film to demarcate a plurality of first regions of the substrate protected by the plurality of etching masks and a second region as an exposed region of the substrate, and anisotropically removing the second region by a chemical etching process to form a plurality of grooves each including a side wall at least partially located in the same plane as an end face of the etching mask and a bottom portion reaching a back surface of the substrate, thereby singulating the semiconductor substrate into a plurality of chip main bodies corresponding to the plurality of first regions.

Abstract: One illustrative 6T SRAM cell structure disclosed herein includes a first active region with a first N-type pass gate transistor, a first N-type pull-down transistor and a first P-type pull-up transistor, each of which are formed in and above the first active region, wherein the first N-type pull-down transistor is positioned laterally between the first N-type pass gate transistor and the first P-type pull-up transistor, and a second active region with a second N-type pass gate transistor, a second N-type pull-down transistor and a second P-type pull-up transistor, each of which are formed in and above the second active region, wherein the second N-type pull-down transistor is positioned laterally between the second N-type pass gate transistor and the second P-type pull-up transistor.

Abstract: Photovoltaic devices including direct gap III-V absorber materials and operatively associated back structures enhance efficiency by enabling photon recycling. The back structures of the photovoltaic devices include wide bandgap III-V layers, highly doped (In)GaAs layers, patterned oxide layers and metal reflectors that directly contact the highly doped (In)GaAs layers through vias formed in the back structures. Localized ohmic contacts are formed in the back structures of the devices.

Abstract: An inspection apparatus according to an aspect of the present invention includes an EUV light source 11, an illumination optical system 10 provided to apply the EUV light to an EUV mask 60, a concave mirror and a convex mirror 22 configured to reflect the EUV light reflected on the EUV mask 60, a camera 32 configured to detect EUV light reflected on the convex mirror 22 and thereby take an image of the EUV mask 60, an AF light source 16 configured to generate AF light having a wavelength of 450 nm to 650 nm, first and second detectors 27 and 30 configured to detect the AF light reflected on the EUV mask 60 through the concave mirror with the hole 21 and the convex mirror 22, and an processing device 31 configured to adjust a focus point of the EUV light on the EUV mask 60.

Abstract: Provided is a method of manufacturing a semiconductor chip, the method comprising: preparing a plurality of semiconductor chips, each of which has a surface to which a BG tape is stuck, and a rear surface to which a DAF is stuck, and which are held spaced from each other by the BG tape and the DAF, exposing the DAF between semiconductor chips that are adjacent to each other when viewed from the surface side, by stripping the BG tape from the surface of each of the plurality of semiconductor chips, etching the DAF that is exposed between the semiconductor chips that are adjacent to each other, by irradiating the plurality of semiconductor chips held on the DAF, with plasma.

Abstract: A method for fabricating a chip scale package, comprising: providing a wafer; applying a polymer resin on at least part of a first surface of the wafer and to one or more sides of the wafer; and applying a compression mold on at least part of a second surface of the wafer and to one or more sides of the wafer, said first and second surfaces opposing each other.

Abstract: A semiconductor apparatus includes a semiconductor substrate having an upper surface on which a semiconductor element is disposed, a lower surface opposite to the upper surface, and a side surface connecting the upper surface and the lower surface. The side surface has a plurality of concavities that each extend along the edge of the upper surface and that are arranged in a direction intersecting with the upper surface and the lower surface, and a plurality of ridges that are each located at the boundary between adjacent two of the plurality of concavities. The plurality of concavities and the plurality of ridges are covered with an insulating film containing carbon and fluorine.

Abstract: The present application describes various embodiments of systems and methods for providing internal components for portable computing devices having a thin profile. More particularly, the present application describes internal components configured to fit within a relatively thin outer enclosure.

Abstract: The present invention relates to a method of processing a solder masked carrier with electronic components, comprising the detection of a carrier related reference and the detection of a solder mask dependent reference, which detected reference are used for processing the position of the solder mask on the carrier. The invention also relates to an electronic component as produced with such method.

Abstract: A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.

Abstract: The present application contemplates a method for manufacturing a power semiconductor device.

Abstract: A semiconductor element is disclosed including a construction with electrode-dividing grooves, in which a dark current is smaller than in existing examples. A method of forming such grooves is also disclosed. In an embodiment, grooves, which electrically divide an electrode layer formed on the surface of a substrate, are formed with a V-shaped cross-sectional shape, groove side walls in the electrode layer, constituting the grooves, being sloping surfaces. An embodiment of the method of forming the grooves includes using a dicing blade having a blade distal end portion which is sharpened into a V-shape to cut a semiconductor wafer in which multiple patterns of semiconductor elements including an electrode layer on the surface of a substrate are formed, forming the grooves having a V-shaped cross-sectional shape which divide the electrode layer in each semiconductor element.

Abstract: There is provided a cutting method for cutting a processing-target object by a cutting blade. The cutting method includes a holding step of holding the processing-target object by a holding table and a cutting step of cutting the processing-target object by the cutting blade by causing the cutting blade that rotates to cut into the processing-target object held by the holding table and causing the holding table and the cutting blade to relatively move after the holding step is carried out. In the cutting step, cutting is carried out with detection of whether or not a crack in the processing-target object exists by a crack detecting unit disposed on the rear side relative to the cutting blade in a cutting progression direction in which cutting processing of the processing-target object by the cutting blade progresses.

Abstract: The invention relates to an optoelectronic semiconductor chip (10) comprising a carrier (2) and a semiconductor body (1) having an active layer (13) provided for generating electromagnetic radiation. Said carrier (2) has a first main surface (2A) facing the semiconductor body, a second main surface (2B) facing away from the semiconductor body, and a sidewall (2C) arranged between the first main surface and the second main surface. The carrier (2) has a structured region (21, 22, 23, 2C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component (100) comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Abstract: An SiC wafer is produced from a single crystal SiC ingot by a method that includes forming a plurality of breakable layers constituting a separation surface in the SiC ingot, each breakable layer including a modified layer and cracks extending from the modified layer along a c-plane, and separating part of the SiC ingot along the separation surface as an interface to thereby produce the SiC wafer. In forming the separation surface, the energy density of a pulsed laser beam is set to an energy density not causing the formation of an upper damage layer above the breakable layer previously formed due to the reflection of the pulsed laser beam from the breakable layer and not causing the formation of a lower damage layer below the breakable layer previously formed due to the transmission of the pulsed laser beam through the breakable layer.

Abstract: Disclosed herein is a processing method of a single-crystal substrate having a film formed on a front side or a back side thereof to divide the single-crystal substrate along a plurality of preset division lines. The method includes a film removing step of removing the film along the division lines, a shield tunnel forming step of applying a pulsed laser beam having a wavelength which permeates through the single-crystal substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines, and dividing step of exerting an external force on the single-crystal substrate to which the shield tunnel forming step is performed to divide the single-crystal substrate along the division lines.

Abstract: A method of dies singulation includes providing a carrier, disposing a plurality of dies over a surface of the carrier according to a plurality of scribe lines comprising a plurality of continuous lines along a first direction and a plurality of discontinuous lines along a second direction, cutting the carrier according to the plurality of continuous lines along the first direction, and cutting the carrier according to the plurality of discontinuous lines along the second direction.

Abstract: An ink-jet recording head includes a plurality of recording element substrates each having an ejection pressure generating element configured to generate pressure for ejecting ink from an ink discharge port. The plurality of recording element substrates each include a first surface on which the corresponding ejection pressure generating element is disposed and a second surface, serving as an end surface intersecting with the first surface, being at least partially formed by etching.

Abstract: A protective film-forming composite sheet 10 comprises a pressure sensitive adhesive sheet 16 in which a pressure sensitive adhesive layer 12 is provided on a base material 11, a protective film-forming film 13, and a release film 14. When ? (mN/25 mm) represents the maximum peel force between the protective film-forming film 13 and the release film 14; ? (mN/25 mm) represents the minimum peel force between the pressure sensitive adhesive sheet 16 and the protective film-forming film 13; and ? (mN/25 mm) represents the maximum peel force between the pressure sensitive adhesive sheet 16 and the protective film-forming film 13, the following relationships (1) to (3) hold for ?, ?, and ?; ??70??(1) ?/??0.50??(2) ??2000??(3).

Abstract: A semiconductor device includes a semiconductor chip formed using a silicon carbide and having electrodes on a first surface and a second surface opposite to the first surface, a terminal disposed adjacent to the first surface and connected to the electrode on the first surface through a bonding member, and a heat sink disposed adjacent to the second surface and connected to the electrode on the second surface through a bonding member. The first surface is a (0001) plane and a thickness direction of the semiconductor chip corresponds to a [0001] direction. Of the distances between the end portions of the semiconductor chip having a square two-dimensional shape and the end portions of the terminal having a rectangular two-dimensional shape, the shortest distance L1 in a [1-100] direction is shorter than the shortest distance L2 in a [11-20] direction.

Abstract: A method of fabricating a semiconductor product including processing of a semiconductor wafer from a front surface including structures disposed in the substrate of the wafer adjacent to the front surface and forming a wiring embedded in a dielectric layer disposed on the front surface. The wafer is mounted to a carrier wafer at its front surface so that material can be removed from the backside of the wafer to thin the wafer. Backside processing of the wafer includes forming implantations from the backside, forming deep trenches to isolate the structures from other structures within the wafer, forming a through-silicon via to contact features on the frontside of the wafer, and forming a body contact. Several devices can be generated within the same wafer.

Abstract: A method for manufacturing a panel includes at least one step as below. A pre-treatment is performed on a first bonding component between two substrates, so that a part of a first bonding portion of the first bonding component becomes a first transformation portion, in which at least one characteristic of the first bonding portion is different from that of the first transformation portion.

Abstract: A lamination includes a sheet substrate and a display element layer. The sheet substrate includes a plurality of product regions cut out into a plurality of products and a blank region surrounding the product regions. The display element layer is formed on each of a plurality of display areas placed on each of the plurality of product regions for displaying an image. The sheet substrate adheres to a top of a substrate. The substrate has light transmissivity. A protective film is adhered to the lamination so as to cover the display areas. A divider line is formed in a blank region that surrounds the product regions by removing a portion of the lamination. The substrate is removed from the sheet substrate by irradiating the sheet substrate with a laser beam.

Abstract: Multi-Project Wafers includes a plurality of chiplets from different IP owners. Non-relevant chiplets are implemented with IP protection to inhibit IP disclosure of non-relevant IP owners.

Abstract: Embodiments of the present disclosure pertain to porous silicon particulates and anode materials that contain them. In some embodiments, each of the porous silicon particulates include a plurality of macropores, mesopores and micropores such that the micropores and mesopores are within the macropores. The porous silicon particulates also contain: a coating associated with the porous silicon particulates; and a binding material associated with the porous silicon particulates. The binding material can include binders, carbon materials, polymers, metals, additives, carbohydrates, and combinations thereof.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: Discloses is a packaging equipment, a method for using the same, and a computer readable storage medium. The packaging equipment includes a movable mechanism and a package assembly, and the movable mechanism is configured to drive the package assembly to move along a predetermined path. The package assembly includes a first rotating mechanism and a first functional module disposed along a first axis, a second functional module is disposed on the first rotating mechanism, and the first rotating mechanism is configured to drive the second functional module to rotate around the first axis.