Abstract: A semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconducto

Abstract: A method for fabricating a semiconductor device includes preparing a substrate including a first region and a second region, forming a lower alternating stack on the substrate; etching the lower alternating stack to form a lower opening in the second region, forming an upper alternating stack on the lower opening and the lower alternating stack to form recess portion caused by filling the lower opening in the second region, forming a mask layer on the upper alternating stack using the recess portion as an alignment key, and etching the upper alternating stack by using the mask layer as a barrier to form a pattern in the first region.

Abstract: A method for fabricating a semiconductor device includes preparing a substrate including a first region and a second region, forming a lower alternating stack on the substrate; etching the lower alternating stack to form a lower opening in the second region, forming an upper alternating stack on the lower opening and the lower alternating stack to form recess portion caused by filling the lower opening in the second region, forming a mask layer on the upper alternating stack using the recess portion as an alignment key, and etching the upper alternating stack by using the mask layer as a barrier to form a pattern in the first region.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: Semiconductor devices having interconnect structures with narrowed portions configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include an end portion away from the semiconductor die, the end portion having a first cross-sectional area. The pillar structure can further include a narrowed portion between the end portion and the semiconductor die, the narrowed portion having a second cross-sectional area less than the first-cross-sectional area of the end portion. A bond material can be coupled to the end portion of the pillar structure.

Abstract: A thin-film device that includes a wiring electrode which contains copper. A terminal electrode is formed on a first region of the first main surface of the wiring electrode. A first close-contact layer made of a material different from copper and that has a shape covering, in a continuous manner, a second region of the first main surface of the wiring electrode, the second region being adjacent to the first region, and the side surface of the wiring electrode that is continuous with the second region.

Abstract: A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

Abstract: Each wire of a wire grid polarizer (WGP) can include the following layers moving outwards from the substrate: a high-index-layer, a low-index-layer, and a reflective-layer. Each wire can have a distal-end, farthest from the substrate, with a convex shape. These layers and the convex shape can be combined for a more stable and improved Rs.

Abstract: A semiconductor device package and manufacturing method thereof are provided. The semiconductor device package includes a first conductive structure, a second conductive structure, a connection element, a conductive member, an encapsulant and a binding layer. The first conductive structure includes a first circuit layer. The second conductive structure is disposed over the first conductive structure. The connection element is disposed on and electrically connected to the first circuit layer. The conductive member protrudes from the second conductive structure. The encapsulant is disposed between the first conductive structure and the second conductive structure. The binding layer is disposed between the second conductive structure and the encapsulant.

Abstract: A semiconductor package includes a semiconductor chip, a redistribution insulating layer having a first opening, and an external connection bump including a first portion filling the first opening. A lower bump pad includes a first surface and a second surface opposite the first surface. The first surface includes a contact portion that directly contacts the first portion of the external connection bump and a cover portion surrounding side surfaces of the contact portion. A first conductive barrier layer surrounds side surfaces of the lower bump pad and is disposed between the lower bump pad and the redistribution insulating layer. A redistribution pattern directly contacts the second surface of the lower bump pad and is configured to electrically connect the lower bump pad to the semiconductor chip.

Abstract: Provided is a plating film containing Au and Tl, including Tl oxides including Tl2O on a surface of the plating film, a ratio of Tl atoms constituting Tl2O to a total of Tl atoms constituting the Tl oxides and Tl atoms constituting Tl simple substances on the surface being 40% or more.

Abstract: A device package and method of forming the device package are described. The device package includes a dielectric on a conductive pad, a first via on a top surface of conductive pad, where the first via extends through dielectric, and a conductive trace on dielectric. The device package has a second via on dielectric, where the conductive trace connects to first and second vias, and the second via connects to an edge of conductive trace opposite from first via. The device package may have a seed on dielectric, where the seed electrically couples to conductive trace, a first seed on the top surface of conductive pad, where the first via is on first seed, and a second seed on a top surface of first via, the second seed on surfaces of second via, where the conductive trace is on second seed disposed on both first and second vias.

Abstract: A method of forming a planarized integration structure is provided. The method includes forming at least two conductive pillars on a packaging substrate, wherein the packaging substrate has a positive or convex meniscus shape. The method further includes placing a bridging die on the packaging substrate between an adjacent pair of the at least two conductive pillars, wherein the bridging die includes one or more conductive interconnects. The method further includes forming a cover layer on the substrate over the at least two conductive pillars and the bridging die, and planarizing the conductive pillars and the one or more conductive interconnects.

Abstract: Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having a mixed under-bump metallization (UBM) size and pitch on a single die. A first set of UBMs having a first total plateable surface area is formed on a first region of a die. A second set of UBMs having an equal total plateable surface area is formed on a second region of the die. A solder bump having a calculated solder height is applied to a plateable surface of each UBM. The solder height is calculated such that a volume of solder in the first region is equal to a volume of solder in the second region.

Abstract: In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.

Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

Abstract: A semiconductor package may include a first semiconductor chip and a second semiconductor chip. The first semiconductor chip may include a first semiconductor substrate, a through via structure and a pad pattern. The first semiconductor substrate may include a first surface and a second surface opposite to the first surface, and the second surface may include a recess. The through via structure may pass through the first semiconductor substrate from the first surface to a bottom of the recess of the second surface. An upper surface of the through via structure may protrude from the bottom of the recess. The pad pattern may be electrically connected to the upper surface of the through via structure, and the pad pattern may include a first recess having a concave shape thereon. The second semiconductor chip may include a bump pattern bonded on an inside of the first recess of the pad pattern.

Abstract: A transparent PCB includes a transparent base film, a hardened layer, an electrode film, a first conductive paste, a second conductive paste, and an electronic component. The hardened layer is formed on a side of the transparent base film. The electrode film is formed on a side of the hardened layer. The electrode film includes a first transparent conductive oxide layer, a metal layer, and a second transparent conductive oxide layer. The first conductive paste is formed on the electrode film. The second conductive paste is formed on the electrode film and spaced from the first conductive paste. The electronic component is electrically connected to the electrode film through the first conductive paste and the second conductive paste. The present invention also needs to provide a method for manufacturing the transparent PCB.

Abstract: Provided is a method of manufacturing a semiconductor package, the method including a first step for forming a primary solder ball on an under bump metallurgy (UBM) structure, and a second step for forming a secondary solder ball on an upper surface of the UBM structure by performing a reflow process on the primary solder ball while a side wall of the UBM structure is exposed.

Abstract: Methods for etching a hardmask layer to transfer features into a material layer using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features through a proper sidewall and bottom management scheme during the hardmask open process. In one embodiment, a method for etching a hardmask layer to form features in the hardmask layer includes supplying an etching gas mixture onto a substrate to etch an exposed portion of a hardmask layer exposed by a patterned photoresist layer disposed on the substrate, switching the etching gas mixture to a deposition gas mixture comprising a silicon containing gas to form a passivation layer on sidewalls of the hardmask layer and forming openings in the hardmask layer.

Abstract: A material for Cu pillars is formed as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on a semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 ?m or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.

Abstract: Generally, the present disclosure provides example embodiments relating to a package attached to a printed circuit board (PCB). In an embodiment, a structure includes a PCB. The PCB has ball pads arranged in a matrix. Outer ball pads are along one or more outer edges of the matrix, and each of the outer ball pads has a first solder-attach area. Inner ball pads are interior to the matrix, and each of the inner ball pads has a second solder-attach area. The first solder-attach area is larger than the second solder-attach area.

Abstract: A method for fabricating a semiconductor device includes preparing a substrate including a first region and a second region, forming a lower alternating stack on the substrate; etching the lower alternating stack to form a lower opening in the second region, forming an upper alternating stack on the lower opening and the lower alternating stack to form recess portion caused by filling the lower opening in the second region, forming a mask layer on the upper alternating stack using the recess portion as an alignment key, and etching the upper alternating stack by using the mask layer as a barrier to form a pattern in the first region.

Abstract: A method of forming a semiconductor package. Implementations include forming on a die backside an intermediate metal layer having multiple sublayers, each including a metal selected from the group consisting of titanium, nickel, copper, silver, and combinations thereof. A tin layer is deposited onto the intermediate metal layer and is then reflowed with a silver layer of a substrate to form an intermetallic layer having a melting temperature above 260 degrees Celsius and including an intermetallic consisting of silver and tin and/or an intermetallic consisting of copper and tin. Another method of forming a semiconductor package includes forming a bump on each of a plurality of exposed pads of a top side of a die, each exposed pad surrounded by a passivation layer, each bump including an intermediate metal layer as described above and a tin layer coupled to the intermediate metal layer is reflowed to form an intermetallic layer.

Abstract: Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion (2) formed on the upper surface of a semiconductor substrate (1), a passivation layer (3) so formed on the upper surface of the semiconductor substrate (1) as to overlap a part of the electrode pad portion (2) and having a first opening portion (3a) where the upper surface of the electrode pad portion (2) is exposed, a barrier metal layer (5) formed on the electrode pad portion (2), and a solder bump (6) formed on the barrier metal layer (5). The barrier metal layer (5) is formed such that an outer peripheral end (5b) lies within the first opening portion (3a) of the passivation layer (3) when viewed in plan.

Abstract: An interposer substrate includes a body, first to third external connection conductors, and a wiring conductor. The body includes first to third principal surfaces. A distance between the first and second principal surfaces is different from a distance between the first and third principal surfaces. The first external connection conductor is provided on the first principal surface and is connected to an external circuit board. The second external connection conductor is provided on the second principal surface and is connected to a first flat cable. The third external connection conductor is provided on the third principal surface and is connected to a second flat cable. The wiring conductor is provided in the body, and connects the first external connection conductor and second and third external connection conductors.

Abstract: A semiconductor structure including a substrate, a dielectric layer, a conductive via, and a landing pad is provided. The dielectric layer is positioned on the substrate. The conductive via penetrates from a lower surface of the substrate to an upper surface of the dielectric layer. The landing pad is embedded in the conductive via.

Abstract: A method of making a semiconductor package includes bonding a carrier to a surface of the substrate, wherein the carrier is free of active devices, wherein the carrier includes a carrier bond pad on a surface of the carrier. The method further includes bonding a wafer bond pad of an active circuit wafer to the carrier bond pad, wherein the bonding of the wafer bond pad to the carrier bond pad comprises re-graining the wafer bond pad to form at least one grain boundary extending from the wafer bond pad to the carrier bond pad.

Abstract: The present disclosure provides a method of manufacturing stacked wafers. The method includes receiving a first wafer having semiconductor components formed therein; receiving a second wafer having semiconductor components formed therein; attaching the first wafer to the second wafer; and forming a set of stacked wafers by thinning the second wafer, using the first wafer as a holder.

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a metallization layer and a dielectric layer disposed on the metallization layer. The metallization layer has conductive patterns, where each of the conductive patterns includes crystal grains, the crystal grains each are in a column shape and include a plurality of first banded structures having copper atoms oriented on a (220) lattice plane.

Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.

Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.

Abstract: A method includes vacuum annealing on a substrate having at least one solder bump to reduce voids at an interface of the at least one solder bump. A die is mounted over the substrate.

Abstract: The present invention is directed to a method for interconnecting two components. The first component includes a first substrate and a set of structured metal pads arranged on a main surface. Each of the pads includes one or more channels, extending in-plane with an average plane of the pad, so as to form at least two raised structures. The second interconnect component includes a second substrate and a set of metal pillars arranged on a main surface. The structured metal pads are bonded to a respective, opposite one of the metal pillars, using metal paste. The paste is sintered to form porous metal joints at the level of the channels. Metal interconnects are obtained between the substrates. During the bonding, the metal paste is sintered by exposing the structured metal pads and metal pillars to a reducing agent. The channels and raised structures improve the penetration of the reducing agent.

Abstract: A method for fabricating a substrate having an electrical interconnection structure is provided, which includes the steps of: providing a substrate body having a plurality of conductive pads and first and second passivation layers sequentially formed on the substrate body and exposing the conductive pads; forming a seed layer on the second passivation layer and the conductive pads; forming a first metal layer on each of the conductive pads, wherein the first metal layer is embedded in the first and second passivation layers without being protruded from the second passivation layer; and forming on the first metal layer a second metal layer protruded from the second passivation layer. As such, when the seed layer on the second passivation layer is removed by etching using an etchant, the etchant will not erode the first metal layer, thereby preventing an undercut structure from being formed underneath the second metal layer.

Abstract: The present invention discloses a solder alloy, solder and a method for producing the same, and belongs to the field of solder. The solder alloy contains 0.9-4.1 wt % of silver, 0.3-1 wt % of copper, 0.02-0.085 wt % of rhodium, and the balance being tin, based on the total weight of the solder alloy being 100 wt %. After the solder formed by the solder alloy of the present invention is subjected to multiple reflows and tested by a ball shear test, the residual tin in the solder joint could reach at least 95%, which meets the ball shear standards required by AEC-Q100.

Abstract: A semiconductor chip includes a semiconductor substrate, a through electrode, an inter-mediation pad, an upper pad, and a rewiring line. The semiconductor substrate includes a first surface that is an active surface and a second surface that is opposite to the first surface. The through electrode penetrates the semiconductor substrate and is disposed in at least one column in a first direction in a center portion of the semiconductor substrate. The inter-mediation pad is disposed in at least one column in the first direction in an edge portion of the second surface. The upper pad is disposed on the second surface and connected to the through electrode. The rewiring line is disposed on the second surface and connects the inter-mediation pad to the upper pad.

Abstract: A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.

Abstract: A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 ?m and less than or equal to 5 ?m.

Abstract: A method of manufacturing a semiconductor device includes a step of preparing a semiconductor element including a functional surface on which a bump is formed and an adhesive layer of a film shape including a flux component, a step of positioning the semiconductor element above a board including an electrode, a step of activating a flux component by applying ultrasonic vibration to the semiconductor element, a step of bringing the bump into contact with the electrode by pressing the semiconductor element to the board, and a step of bonding the bump to the electrode by continuing the application of the ultrasonic vibration and the pressing of the semiconductor element.

Abstract: A deposition mask and a manufacturing method thereof capable of performing vapor deposition at a desired place, without causing any gap between the deposition mask and a substrate for vapor deposition having a surface of irregularity, even when depositing a vapor deposition material only at a predetermined place on a bottom part of the substrate for vapor deposition, are provided. The manufacturing method includes preparing a dummy substrate having irregularity corresponding to a surface shape of the substrate for vapor deposition (step S1), coating a liquid resin material on an uneven surface of the dummy substrate to form a resin coating layer (step S2), and raising the temperature of the resin coating layer and baking the resin coating layer to obtain a baked resin film (step S3).

Abstract: A package structure includes an interconnection layer; a passivation layer disposed on the interconnection layer, in which the interconnection layer and the passivation layer defined at least one opening; at least one elastic bump disposed on the interconnection layer, in which a portion of the elastic bump is embedded in the opening; and a conductive layer disposed on the elastic bump.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a first molding material disposed around the integrated circuit die, and a through-via disposed within the first molding material. A first side of a redistribution layer (RDL) is coupled to the integrated circuit die, the through-via, and the first molding material. A second molding material is over a second side of the RDL, the second side of the RDL being opposite the first side of the RDL. The packaged semiconductor device includes an antenna over the second molding material.

Abstract: An apparatus and method for soldering chips to a substrate. A substrate and two or more different chips having different heating properties are provided. A solder material is disposed between the chips and the substrate. A flash lamp generates a light pulse for heating the chips, wherein the solder material is at least partially melted by contact with the heated chips. A masking device is disposed between the flash lamp and the chips causing different light intensities in different areas of the light pulse passing the masking device thereby heating the chips with different light intensities. This may compensate the different heating properties to reduce a spread in temperature between the chips as a result of the heating by the light pulse.

Abstract: The present disclosure is to provide a slit grating applied in autostereoscopic display apparatus and autostereoscopic display apparatus. The slit grating includes a substrate and a plurality of light-shielding strips arranged in intervals on the substrate; the light-shielding strips is used to shielding incident light; the slit grating further includes a wire grid among a light-transmitting region between the light-shielding strips, and the wire grid is used to transmitting a first polarized component of the incident light and reflecting a second polarized component that is perpendicular to the first polarized component of the incident light. The autostereoscopic display apparatus includes a backlight module, a liquid crystal display and the slit grating. The present disclosure can improve brightness of display device, and achieve cost decreasing and thickness reducing at the same time.

Abstract: According to one embodiment, a device substrate includes a multilayer film that includes a film constituting a device element and is disposed on a substrate. A main face on which the device element is disposed includes a patterning region on which a resist is to be applied during an imprint process, and a bevel region provided as a region from a peripheral edge portion of the patterning region to an end portion of the device substrate. The bevel region includes a region where an upper surface of the bevel region becomes lower toward the end portion of the device substrate relative to an upper surface of the patterning region. The upper surface of the bevel region has an inclination angle of 10° or more and 90° or less with respect to the upper surface of the patterning region, at a boundary between the patterning region and the bevel region.

Abstract: A packaging substrate includes a base body having at least a conductive pad on a surface thereof, a dielectric layer formed on the surface of the base body and having at least a first opening for exposing the conductive pad and at least a second opening formed at a periphery of the first opening, and a metal layer formed on the conductive pad and the dielectric layer and extending to a sidewall of the second opening, thereby effectively eliminating side-etching of the metal layer under a solder bump.

Abstract: In order to manufacture an alloy bump, a resist pattern having openings which expose a substrate is formed on the substrate, an under-bump metal is formed on the substrate inside the openings, a first plating film is formed on the under-bump metal by electroplating, a second plating film containing no metal components which are contained in the first plating film is formed on the first plating film by electroplating, the resist pattern is removed, and the alloy bump is formed by heat treating the substrate to thereby alloy the first plating film and the second plating film.

Abstract: A circuit structure includes a patterned circuit layer, a patterned insulating layer and a support plate. The patterned insulating layer covers a portion of the patterned circuit layer, wherein an upper surface of the patterned circuit layer is aligned with a top surface of the patterned insulating layer. The support plate is disposed on a bottom surface of the patterned insulating layer, wherein the support plate, the patterned insulating layer and the patterned circuit layer define a plurality of air gaps.