Abstract: Disclosed is a vertical alignment method of a micro light emitting diode (LED), which is capable of vertically aligning vertical type micro LEDs each having a nano size or micro size and stably maintaining an aligned state on a structural basis. The method includes preparing a substrate provided with a plurality of through holes formed in a thickness direction, locating micro LEDs to be aligned on the substrate in a state of being included in a suspension which provides buoyancy, and generating a pressure difference between an upper side and a lower side of the substrate and moving the suspension in a downward direction through the through holes of the substrate to induce the micro LEDs included in the suspension to be aligned in an upright state by being at least partially inserted into the through holes.

Abstract: The present invention discloses flip-chip bonding method using an anisotropic adhesive polymer. The method includes applying an adhesive polymer solution containing metal particles dispersed therein onto a circuit substrate to form an adhesive polymer layer such that the adhesive polymer layer covers the metal particles; drying the adhesive polymer layer; and positioning an electronic element to be electrically connected to the circuit substrate on the dried adhesive polymer layer and causing dewetting of the polymer from the metal particles.

Abstract: A circuit board assembly has a circuit board and an electrical component embedded in a cured plastic layer, as well as a heat sink for cooling the component. The component is placed with a first side on a surface of the circuit board facing the heat sink and in electrical contact with the circuit board, and is located in a window in the cured plastic layer. Moreover, the component is materially bonded to a surface of the heat sink facing the circuit board at a second side lying opposite the first side, in particular through soldering or sintering. The plastic layer is injected and cured between the surface of the circuit board and the surface of the heat sink. In the production process, the material is melted by the heat at the same time as the injection, such that the component is materially bonded to the heat sink.

Abstract: An applying method includes the following steps. Firstly, a conductive adhesive including a plurality of conductive particles and an insulating binder is provided. Then, a carrier plate is provided. Then, a patterned adhesive is formed on the carrier plate by the conductive adhesive, wherein the patterned adhesive includes a first transferring portion. Then, a manufacturing device including a needle is provided. Then, the needle of the manufacturing device is moved to contact the first transferring portion. Then, the transferring portion is transferred to a board by the manufacturing device.

Abstract: An embedded chip package includes a circuit board, a chip, a dielectric material layer, and a build-up circuit structure. The circuit board includes a glass substrate and at least one conductive via. The glass substrate has a first surface, a second surface opposite the first surface, and a through-hole penetrating the glass substrate. The conductive via penetrates the glass substrate. The chip is disposed inside the through-hole. The dielectric material layer is filled inside the through-hole and covers the chip. The build-up circuit structure is disposed on the circuit board. The build-up circuit structure is electrically connected to the conductive via. A lower surface of the chip is exposed outside the dielectric material layer.

Abstract: A method for chip on wafer bonding is provided. The method includes the formation of a plurality of posts on at least one of a chip and a wafer, and a like plurality of contacts on the other of the chip and the wafer. After formation, a contact surface of each post is planarized, the respective planarized contact surface having a surface roughness height. A bonding material is then applied to at least one of the chip in a thickness no greater than the surface roughness height of the contact surface. The posts are then temporarily bonded to the contacts using the bonding material to stabilize a position of the chip relative to the wafer for permanent diffusion bonding of the chip to the wafer.

Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for assuring deposition of elements in relation to a substrate. In some cases, embodiments include a substrate including a plurality of wells each having a sidewall where a through hole via extends from a bottom of at least one of the plurality of wells; and a post enhanced diode including a post extending from a top surface of a diode structure.

Abstract: The present invention relates to a terminal structure comprising; a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, the under-bump metal layer has a convex shape toward the bump, and the thickness Tu0 of the under-bump metal layer at a center of the opening is equal to or greater than the thickness Tu1 of the under-bump metal layer at an end portion of the opening.

Abstract: The present invention discloses methods and apparatuses for the separations of IC fabrication and assembling of separated IC components to form complete IC structures. In an embodiment, the present fabrication separation of an IC structure into multiple discrete components can take advantages of dedicated IC fabrication facilities and achieve more cost effective products. In another embodiment, the present chip assembling provides high density interconnect wires between bond pads, enabling cost-effective assembling of small chip components. In an aspect, the present process coats the component surfaces to facilitate the bonding of the bond pads. In another aspect, the present process coats the bond pads with shelled capsules to facilitate the bonding of the bond pads.

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 ?m to 1.0 ?m and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300° C.

Abstract: A semiconductor chip includes a semiconductor substrate with a top surface and a bottom surface. An active layer may be formed on the top surface of the semiconductor substrate and may comprise one or more signal pads and one or more chip selection pads on an upper surface of the active layer. First and second through electrodes may be formed to pass through the semiconductor substrate and the active layer, with the first through electrodes being electrically connected with the signal pads and the second through electrodes being electrically connected with the chip selection pads. A side electrode may be formed on a side surface of the semiconductor chip in such a way as to be connected with a second through electrode.

Abstract: A semiconductor device has a semiconductor die and first insulating layer formed over the semiconductor die. A plurality of first micro-vias can be formed in the first insulating layer. A conductive layer is formed in the first micro-openings and over the first insulating layer. A second insulating layer is formed over the first insulating layer and conductive layer. A portion of the second insulating layer is removed to expose the conductive layer and form a plurality of second micro-openings in the second insulating layer over the conductive layer. The second micro-openings can be micro-vias, micro-via ring, or micro-via slots. Removing the portion of the second insulating layer leaves an island of the second insulating layer over the conductive layer. A bump is formed over the conductive layer. A third insulating layer is formed in the second micro-openings over the bump. The second micro-openings provide stress relief.

Abstract: An embodiment is a method for forming a semiconductor assembly including cleaning a connector including copper formed on a substrate, applying cold tin to the connector, applying hot tin to the connector, and spin rinsing and drying the connector.

Abstract: A method of manufacturing an electronic component, which includes arranging a plurality of first electrode pads on a first substrate, and a plurality of second electrode pads on a second substrate, so that the first and second electrode pads correspond to each other. The method further includes forming a plurality of solder bumps on the second electrode pads and putting the first substrate over the second substrate. The first and second substrates are shifted in parallel to each other, in a horizontal direction, while the solder bumps are melting, so that the solder bumps are stretched in a slant direction to cause the solder bumps to be solidified into hourglass-shapes.

Abstract: The invention generally relates to a packaging method of an ultra-thin chip, more specifically, the invention relates to a method for packaging the ultra-thin chip with solder ball thermo-compression in wafer level packaging process. The method starts with disposing solder balls on metal pads arranged on the front surface of semiconductor chips that are formed at the front surface of a semiconductor wafer. The solder balls are soften by heating the wafer, a compression plate is applied with a pressure on the top ends of the solder balls thus forming a co-planar top surface at the top ends of the solder balls. A molding compound is deposited on the front surface of the wafer with the top ends of the solder balls exposed. The wafer is then ground from its back surface to reduce its thickness to achieve ultra-thin chip.

Abstract: This publication discloses an electronics module and a method for manufacturing it. The electronic module includes at least one first embedded component (6), the contact terminals (7) of which face essentially towards the first surface of the insulating-material layer (1) and which is connected electrically by its contact terminals (7) to the conductor structures contained in the electronic module. According to the invention, a second embedded component (6?), the contact terminals (7?) of which face essentially towards the second surface of the insulating-material layer and which is connected electrically by its contact terminals (7?) to the conductor structures contained in the electronic module, is attached by means of glue or two-sided tape to the first component (6), and the contact terminals (7, 7?) are connected to the conductor structures with the aid of a conductive material, which is arranged in the insulating-material layer in holes (17) at the locations of the contact terminals (7, 7?).

Abstract: An electrical interconnect forming method. The electrical interconnect includes a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.

Abstract: An electrical structure including a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.

Abstract: A structure and a method of manufacturing a Pb-free Controlled Collapse Chip Connection (C4) with a Ball Limiting Metallurgy (BLM) structure for semiconductor chip packaging that reduce chip-level cracking during the Back End of Line (BEOL) processes of chip-join cool-down. An edge of the BLM structure that is subject to tensile stress during chip-join cool down is protected from undercut of a metal seed layer, caused by wet etch of the chip to remove metal layers from the chip's surface and solder reflow, by an electroplated barrier layer, which covers a corresponding edge of the metal seed layer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a device over a substrate including a bond wire pad row located between a perimeter of the substrate and the device; configuring the bond wire pad row to include three sided bond wire pads that horizontally overlap; and forming an interconnection between the device and the bond wire pad row.

Abstract: A semiconductor device has a leadframe with a plurality of bodies extending from the base plate. A first semiconductor die is mounted to the base plate of the leadframe between the bodies. An encapsulant is deposited over the first semiconductor die and base plate and around the bodies of the leadframe. A portion of the encapsulant over the bodies of the leadframe is removed to form first openings in the encapsulant that expose the bodies. An interconnect structure is formed over the encapsulant and extending into the first openings to the bodies of the leadframe. The leadframe and bodies are removed to form second openings in the encapsulant corresponding to space previously occupied by the bodies to expose the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with bumps extending into the second openings of the encapsulant to electrically connect to the interconnect structure.

Abstract: A process for aligning at least two layers in an abutting relationship with each other comprises forming a plurality of sprocket openings in each of the layers for receiving a sprocket of diminishing diameters as the sprocket extends outwardly from a base, with the center axes of the sprocket openings in each layer being substantially alignable with one another, the diameter of the sprocket openings in an abutting layer for first receiving the sprocket being greater than the diameter of the sprocket openings in an abutted layer. This is followed by forming a plurality of reservoir openings in each of at least two of the layers and positioning the sprocket openings in the layers to correspond with one another and the reservoir openings in the layers to correspond with one another so that substantial alignment of the center axes of the corresponding sprocket openings in the layers effects substantial alignment of the center axes of the corresponding reservoir openings in the layers.

Abstract: A semiconductor device has an LSI chip including a semiconductor substrate, an LSI core section provided at a center portion of the semiconductor substrate and serving as a multilayered wiring layer of the semiconductor substrate, a first rewiring layer provided adjacent to an outer periphery of the LSI core section on the semiconductor substrate and including a plurality of wiring layers, a first pad electrode disposed at an outer periphery of the first rewiring layer, and an insulation layer covering the first pad electrode. The semiconductor device includes a second rewiring layer provided on the LSI chip and including a rewiring connected to the first pad electrode. The semiconductor device includes a plurality of ball electrodes provided on the second rewiring layer. The first rewiring layer is electrically connected to the LSI core section and the first pad electrode.

Abstract: Methods for minimizing component shift during soldering are described. One such method includes forming a pedestal pad having a preselected shape on a substrate, forming at least one intervening layer on the substrate, the at least one intervening layer including a layer including a solidifying accelerant, and a layer including a solder, the solder layer having a preselected shape about the same as the preselected shape of the pedestal pad, positioning the component on the at least one intervening layer, and heating the solder to a predetermined process temperature, wherein the pedestal pad is configured to remain a solid during the heating the solder to the predetermined process temperature, and wherein the solidifying accelerant is configured to accelerate a solidification of the solder after the heating the solder to the predetermined process temperature.

Abstract: An electrical interconnect forming method. The electrical interconnect includes a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.

Abstract: The present invention allows for direct chip-to-chip connections using the shortest possible signal path.

Abstract: The present invention provides a ceramic substrate including: a ceramic stacked layer structure in which multiple ceramic layers are stacked to be interconnected through a via provided within each of the ceramic layers, the ceramic stacked layer structure having a hole provided therein to expose a top portion of the via provided within a ceramic layer of being a surface layer; a conductive material filled within the hole; and an external electrode formed on the surface of the ceramic stacked layer structure so that the external electrode is electrically connected to the conductive material, and a manufacturing method thereof.

Abstract: A wiring circuit layer 2 having at least a wiring part and an insulating part, whose top and bottom surfaces (20A, 20B) is adhesive surfaces, is formed on a metal support substrate 1 in a way such that the layer 2 can be peeled from the substrate 1. Exposed in the first adhesive surface 20A of the wiring circuit layer 2 is a first connecting conductor part 21, which is connectable with an electrode 31 of a first semiconductor element 3 in a wafer state. After the wiring circuit layer 2 is laminated on and connected to the element 3, the metal support substrate 1 is peeled from the wiring circuit layer 2 to yield a semiconductor device 4. Another element may be connected to the other adhesive surface 20B exposed upon the peeling.

Abstract: Interconnects are formed on attachment points of a wafer by performing several steps. A plurality of cavities having a predetermined shape is formed in a semiconductor substrate. These cavities are then filled with an interconnect material to form the interconnects. The interconnects are subsequently attached to the attachment points of the wafer.

Abstract: The invention provides a technique and a device that dramatically improve joint reliability of miniature joints of fine electronic components. According to the invention, when producing a tin or a solder alloy used for electronic components, an ingot of a tin or a solder alloy is heated, melted and delivered to a reactor. Also, a solution containing organic acid having a carboxyl group (—COOH) is delivered to the reactor. After stirring and mixing the two liquids intensively, the mixed liquid is separated into a molten tin or a molten solder alloy liquid and an organic acid solution according to the difference in specific gravity. Then, the respective liquids are circulated to the reactor, and the metal oxides and the impurities existing in the molten tin or the molten solder alloy are removed, and the molten tin or the molten alloy is purified to have oxygen concentration of 5 ppm or less.

Abstract: Solder mold plates and methods of manufacturing the solder mold plates are provided herein. The solder mold plates are used in controlled collapse chip connection processes. The solder mold plate includes a plurality of cavities. At least one cavity of the plurality of cavities has a different volume than another of the cavities in a particular chip set site. The method of manufacturing the solder mold plate includes determining susceptible white bump locations on a chip set. The method further includes forming lower volume cavities on the solder mold plate which coincide with the susceptible white bump locations, and forming higher volume cavities on the solder mold plate which coincide with less susceptible white bump locations.

Abstract: A wiring circuit layer 2 having a connecting conductor part 21 that can be connected to an electrode 31 of a semiconductor element 3 is formed on a metal support substrate 1 in a way such that the wiring circuit layer can be separated from the substrate 1, and that the connecting conductor part 21 is exposed on the upper face of the wiring circuit layer. The wiring circuit layer 2 is laminated on the element 3 while in a wafer state, and the connecting conductor part 21 and the electrode 31 are connected. Subsequently, the support substrate 1 is peeled from the wiring circuit layer 2, and the wafer is diced, whereby individual semiconductor devices are obtained.

Abstract: A method of manufacturing a semiconductor package, includes the steps of: forming a substrate on which a semiconductor chip is to be mounted; and mounting the semiconductor chip on the substrate through connection bumps, the substrate forming step including a first step of forming a plurality of electrode pads to be bonded to the connection bumps on a part of a support plate, a second step of forming one or more wiring layers on the support plate including the electrode pads with an insulation layer interposed between them, thereby forming a substrate having the electrode pads formed thereon on one side thereof, and a third step of removing the substrate from the support plate, wherein a plurality of first convex portions are formed on the support plate prior to the first step, and the electrode pads are formed on the first convex portions at the first step.

Abstract: A method of fabricating a thin wafer die includes creating circuits and front-end-of-line wiring on a silicon wafer, drilling holes in a topside of the wafer, depositing an insulator on the drilled holes surface to provide a dielectric insulator, removing any excess surface deposition from the surface, putting a metal fill into the holes to form through-silicon-vias (TSV), creating back-end-of-line wiring and pads on the top surface for interconnection, thinning down the wafer to expose the insulator in from the TSVs to adapt the TSVs to be contacted from a backside of the wafer, depositing an insulating layer which contacts the TSV dielectric, thinning down the backside of the wafer, opening through the dielectric to expose the conductor of the TSV to provide a dielectric insulation about exposed backside silicon, and depositing ball limiting metallurgy pads and solder bumps on the backside of the wafer to form an integrated circuit.

Abstract: A protruding electrodes is formed on a lead electrode of an electronic component, and the protruding electrodes comprises a first conductor formed on the lead electrode of the electronic component, and a second conductor overlaid on the first conductor by using a transfer mold having a concavity. By virtue of this structure, protruding electrodes of any configuration can be formed in fine pitches.

Abstract: A method for bonding a semiconductor device onto a substrate is provided which comprises the steps of picking up a solder ball with a pick head, placing the solder ball onto the substrate and melting the solder ball on the substrate and placing the semiconductor device on the molten solder ball. The molten solder ball is then allowed to cool to form a solder joint which bonds the semiconductor device to the substrate.

Abstract: A semiconductor device is provided which comprises a substrate (501) having a plurality of bond pads (503) disposed thereon. Each bond pad has a major axis and a minor axis in a direction parallel to the substrate, and the ratio of the major axis to the minor axis increases with the distance of a bond pad from the center of the substrate.

Abstract: Methods and UBM structures having bilayer or trilayer UBM layers that include a thin TiW adhesion layer and a thick Ni-based barrier layer thereover both deposited under sputtering operating conditions that provide the resultant bilayer or trilayer UBM layers with minimal composite stresses. The Ni-based barrier layer may be pure Ni or a Ni alloy. These UBM layers may be patterned to fabricate bilayer or trilayer UBM capture pads, followed by joining a lead-free solder thereto for providing lead-free solder joints that maintain reliability after multiple reflows. Optionally, the top layer of the trilayer UBM structures may include soluble or insoluble metals for doping the lead-free solder connections.

Abstract: A semiconductor device and a method of manufacturing the same are disclosed. The method is carried out by forming solder pads on a substrate by wet etching, flipping a semiconductor chip having a plurality of connection bumps formed on an active surface of the semiconductor chip for the connection bumps to be mounted by compression on the solder pads of the substrate correspondingly, at a temperature of the compression between the connection bumps and the solder pads lower than the melting points of the solder pads and the connection bumps, so as to allow the semiconductor chip to be engaged with and electrically connected to the substrate through the connection bumps and the solder pads, thereby enhancing the bonding strength of the solder pads and the connection bumps and increasing the fabrication reliability.

Abstract: Methods for making solder balls, which can be used to bump semiconductor wafers are disclosed. Methods for bumping semiconductor wafers with the solder balls are also disclosed. The solder balls can be made using an injection molded soldering (IMS) process.

Abstract: A semiconductor component and a method for its production in semiconductor chip size, can have a semiconductor chip, which has external contacts of the semiconductor component that are arranged in the manner of a flip-chip on its active upper side. The semiconductor chip can be encapsulated by a plastic compound at least on its rear side and its side edges. The outer contacts, which can be arranged on external contact connecting areas, can project from the active upper side.

Abstract: A method for forming solder bumps on an electronic component. Providing a transfer substrate having a plurality of solder balls, disposing the transfer substrate on the surface of the electronic component, heating to reflow the solder balls onto the electronic component; and removing the sacrificial substrate. The transfer substrate may comprise a sacrificial film and a metal layer patterned with a mask which is used to form solder balls on the transfer substrate. Or, the transfer substrate may comprise a sheet of material having solder balls embedded at least partially in the sheet. A method of aligning a part being bumped with a transfer substrate, using a shuttle mechanism and an alignment film is disclosed.

Abstract: A semiconductor device 100 has such a structure that a semiconductor chip 110 is flip-chip mounted on a wiring board 120. The wiring board 120 has a multilayer structure in which a plurality of wiring layers and a plurality of insulating layers are arranged, and has a structure in which insulating layers of a first layer 122, a second layer 124, a third layer 126 and a fourth layer 128 are provided. The first layer 122 has a first insulating layer 121 and a second insulating layer 123. A protruded portion 132 which is protruded in a radial direction (a circumferential direction) from an outer periphery at one surface side of a first electrode pad 130 is formed on a whole periphery over a boundary surface between the first insulating layer 121 and the second insulating layer 123.

Abstract: A mounted body of the present invention includes: a multilayer semiconductor chip 20 including a plurality of semiconductor chips 10 (10a, 10b) that are stacked; and a mounting board 13 on which the multilayer semiconductor chip 20 is mounted. In this mounted body, each of the semiconductor chips 10 (10a, 10b) in the multilayer semiconductor chip 20 has a plurality of element electrodes 12 (12a, 12b) on a chip surface 21 (21a, 21b) facing toward the mounting board 13. On the mounting board 13, electrode terminals 14 are formed so as to correspond to the plurality of element electrodes (12a, 12b), respectively, and the electrode terminals 14 of the mounting board and the element electrodes (12a, 12b) are connected electrically to each other via solder bump formed as a result of assembly of solder particles. With this configuration, a mounted body on which a stacked package is mounted can be manufactured easily.

Abstract: A method for forming solder bumps on an electronic component. Providing a transfer substrate having a plurality of solder balls, disposing the transfer substrate on the surface of the electronic component, heating to reflow the solder balls onto the electronic component; and removing the sacrificial substrate. The transfer substrate may comprise a sacrificial film and a metal layer patterned with a mask which is used to form solder balls on the transfer substrate. Or, the transfer substrate may comprise a sheet of material having solder balls embedded at least partially in the sheet. A method of aligning a part being bumped with a transfer substrate, using a shuttle mechanism and an alignment film is disclosed.

Abstract: A ball grid array (BGA) package having a half-etched bonding pad and a cut plating line and a method of fabricating the same. In the BGA package, the plating line is cut to form a predetermined uneven bonding pad using half-etching, thereby increasing the contact area between the bonding pad and a solder ball. The BGA package includes a first external layer having a first circuit pattern and a wire bonding pad pattern wherein a chip is connected to a wire bonding pad using wire bonding. A second external layer includes a second circuit pattern, a cut plating line pattern, and a half-etched uneven solder ball pad pattern. In the second external layer, another chip is mounted on a solder ball pad. An insulating layer having a through hole interposed between the first and second external layers and electrically connects the first and second external layers therethrough.

Abstract: A gallium nitride based compound semiconductor device including a compliant substrate having a reduced stress and a method for manufacturing the same are disclosed. The compliant substrate included in the gallium nitride based compound semiconductor device is manufactured by heating a substrate and a group III metal including at least one of an aluminum, a gallium and an indium, and a chloride based compound generated by introducing a HCl gas to the melted group III metal reacts with a NH3 gas to form a nitride based thin film on the wafer.

Abstract: A method used during the formation of a semiconductor device assembly can include contacting an end of a conductive bump (which can be a pillar, ball, pad, post, stud, or lead as well as other types of bumps) with a conductive powder such as a solder powder to adhere the conductive powder to the end of the bump. The powder can be flowed, for example by heating, to distribute it across the end of the bump. The flowed powder can be placed in contact with a conductive pad of a receiving substrate and can then be reflowed to facilitate electrical connection between the bump and the conductive pad.

Abstract: An electrical structure and method of forming. The electrical structure includes a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.

Abstract: A semiconductor component and a method for its production in semiconductor chip size, can have a semiconductor chip, which has external contacts of the semiconductor component that are arranged in the manner of a flip-chip on its active upper side. The semiconductor chip can be encapsulated by a plastic compound at least on its rear side and its side edges. The outer contacts, which can be arranged on external contact connecting areas, can project from the active upper side.