Abstract: Controlling the thickness of borophosphorous tetraethyl orthosilicate (BPTEOS) used as all or part of the first inter-layer dielectric (ILD0) in manufacturing a semiconductor device containing an array of transistors to control the field leakage between transistors. Reducing field leakage enables the thickness of field oxide, typically used to reduce field leakage, to be reduced to increase device density in the transistor array.
Abstract: A process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2 provides improved properties of the resulting film for use in the semiconductor industry.
Type:
Grant
Filed:
October 2, 1997
Date of Patent:
February 23, 1999
Assignee:
Air Products and Chemicals, Inc.
Inventors:
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg, Herman Gene Hockenhull, Felicia Diane Kaminsky
Abstract: A TFT having a crystalline semiconductor layer and a gate insulating film of silicon oxide is manufactured. The gate insulating film is formed by vapor phase deposition such as sputtering or CVD and the deposited silicon oxide is thermally annealed in a reactive nitrogen atmosphere. The silicon oxide film, especially, the boundary portion of the silicon oxide film close the active region is nitrided. Thus, dangling bonds included in the silicon oxide film can be neutralized.
Type:
Grant
Filed:
August 30, 1995
Date of Patent:
October 6, 1998
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
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