Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

Abstract: A powder gathering apparatus includes at least two rotating plates and a driving mechanism. The at least two rotating plates are disposed with respect to each other. Each of the rotating plates includes at least one spherical member. The at least one spherical member protrudes from the rotating plate. The driving mechanism drives at least one of the at least two rotating plates to move, such that the at least two rotating plates get close to or away from each other. The driving mechanism drives the at least two rotating plates to rotate.

Abstract: A dressing apparatus 1 includes a regulating body 13 which has a ridge portion 12 with a surface having a shape corresponding to the shape of a grinding surface 6 of a grinding wheel 5, the surface being brought into face-to-face contact, over a required length, with the grinding surface 6 of the grinding wheel 5 which rotates; a jetting abrasive grain generating device 11 serving as a device for generating a pressure fluid with abrasive grains mixed therein; and a jetting port 15 for jetting abrasive grain-mixed compressed air, the jetting port 15 serving as a jetting device for jetting the mixed compressed air as a pressure fluid with the abrasive grains mixed therein from the jetting abrasive grain generating device 11 into a space between the grinding surface 6 and the surface of the ridge portion 12 of the regulating body 13 which are brought into face-to-face contact with each other.

Abstract: A system for removing material from a workpiece comprising: a mounted-point grinding tool configured to move from a first position to a second position traversing at least a portion of a slot in a workpiece and removing material from a surface of the workpiece; and a first nozzle configured to deliver coolant to the mounted-point grinding tool, wherein the first nozzle is configured to move with the mounted point grinding tool from the first position to the second position so that the distance between the first nozzle and the mounted-point grinding tool remains substantially unchanged. A second nozzle can be mounted on the opposite side of tool from first nozzle, with the second nozzle also configured to move with the grinding tool so that the distance between the first nozzle and the mounted-point grinding tool remains substantially unchanged during grinding.

Abstract: The invention provides a method of providing a tapered edge on a sheet comprising a fibrous material, comprising moving the sheet while carrying out the following steps: —moving the sheet past a freezing device, which sheet is provided with a substance embedding the fibrous material, at least at a first edge of the sheet, which substance is in a non-solid state at room temperature, in particular at 20 degrees Celsius, and cooling the first edge using the freezing device, so that the substance at the first edge becomes solid, —moving the sheet past a machining device while the substance is solid from the cooling using the freezing device, and —machining, during the step of moving the sheet past a machining device, the first edge with the machining device to provide a first tapered edge.

Abstract: A carrier for a slider row bar for a lapping process. The carrier has a mounting structure comprising a material configured to have a first modulus of at least 1,000,000 Pa at a first period of time and a second modulus of 500 Pa to 500,000 Pa at a second period of time subsequent to the first period. The change from the first modulus to the second modulus is due to an external stimulus on the material.

Abstract: A ceramic matrix composite component, turbine system and fabrication process are disclosed. The ceramic matrix composite (CMC) component includes a CMC material, an environmental barrier coating (EBC) on the CMC material, and a hard wear coating applied over the EBC. The turbine system includes a rotatable CMC component having a hard wear coating, and a stationary turbine component, the stationary turbine component having an abradable coating arranged and disposed to be cut by the silicon carbide material. The fabrication process includes positioning the rotatable CMC a pre-determined distance from the stationary turbine component and rotating the rotatable CMC component. The hard wear coating on the rotatable CMC component cuts the abradable coating on the stationary turbine component.

Abstract: A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.

Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

Abstract: A radiation sensor may include a scintillator, a reflector, and a sensor. The scintillator may be capable of converting non-visible radiation into scintillation light. The reflector may be formed from material of outside surfaces of the scintillator, to reflect the scintillation light. The sensor may be positioned in proximity to the scintillator, to detect the scintillation light from the scintillator. A method of manufacturing a scintillator with an intrinsic reflector may include heating the scintillator in an oxygen-deficient environment at a first temperature for a first predetermined time period, and optionally annealing the scintillator in an oxygenated environment at a second temperature for a second predetermined time period.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.

Abstract: A machining device for machining crankshafts has a rotationally driven disk-shaped base body with blade inserts arranged peripherally thereon. A first supply line for a cryogenic cooling medium is arranged concentrically with the axis of rotation and is thermally insulated in at least some sections. The tool has a plurality of second supply lines for the cryogenic cooling medium running across the axis of rotation and leading to the blade inserts, the second supply lines each being thermally insulated in at least some sections. A distributor unit connects the first supply line to at least one of the second supply lines for supplying the cryogenic cooling medium to at least one of the blade inserts. The cryogenic cooling medium can be conducted directly to the blade inserts which are engaged with the crankshaft that is to be machined.

Abstract: A nanocomposite fluid includes a fluid medium; and a nanoparticle composition comprising nanoparticles which are electrically insulating and thermally conductive. A method of making the nanocomposite fluid includes forming boron nitride nanoparticles; dispersing the boron nitride nanoparticles in a solvent; combining the boron nitride nanoparticles and a fluid medium; and removing the solvent.

Abstract: A programmable coolant nozzle system and method for grinding wheel machines. The system comprises a fluid manifold block that automatically or manually follows the wear of the grinding wheel, to position coolant jets tangential to the wheel surface throughout the life of the grinding wheel. The positioning is by an arcuate motion, through a parallelogram mechanism, to ensure that the coolant jets remain at the same angle to the grinding wheel surface throughout the entire range of motion.

Abstract: A double-side polishing apparatus including at least: upper and lower turn tables each having a polishing pad attached thereto; a carrier having a holding hole formed therein for holding a wafer between the upper and lower turn tables; a sensor for detecting a thickness of the wafer during polishing, the sensor being disposed in a through-hole provided at the upper turn table in a direction of an upper-turn-table rotation axis; and a sensor holder for holding the sensor, wherein a material of the sensor holder is quartz. As a result, there is provided a double-side polishing apparatus that can polish a wafer while the difference from the target wafer thickness is reduced by surely inhibiting deformation of the sensor holder due to the influence of heat generated during the polishing of the wafer.

Abstract: A method for operating a machining tool, comprising: setting a flow rate and a pressure of a flow of coolant to a target flow rate and a pressure target, respectively, the coolant flow being provided to the machining tool; machining a work-piece using the machining tool; measuring the flow rate and the pressure of the flow of coolant; and detecting an anomaly with respect to the coolant flow; and taking a corrective action depending on the type of the detected anomaly.

Abstract: The present invention is directed to an apparatus for grinding or polishing at least one edge of a glass substrate. The apparatus includes a grinding unit configured to remove a predetermined amount of material from the edge when in an aligned position. The grinding unit applies a predetermined force normal to the edge. An air bearing slide system is coupled to the grinding unit. The air bearing slide system is configured to slide along a predetermined axis on a thin film of pressurized air that provides a zero friction load bearing interface. A linear actuation motor is coupled to the air bearing slide system. The linear actuation motor is configured to control the movement of the air bearing slide system such that the grinding unit is moved from a non-aligned position to the aligned position.

Abstract: A method and system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values.

Abstract: An example component machining method includes immersing a surface of a component within a fluid during a machining process. The method heats the surface during the machining to vary the machining process at the surface relative to other surfaces of the component.

Abstract: In a method for multiple cutoff machining a rare earth magnet block, a cutting fluid feed nozzle having a plurality of slits is combined with a plurality of cutoff abrasive blades coaxially mounted on a rotating shaft, each said blade comprising a base disk and a peripheral cutting part. The slits in the feed nozzle into which the outer peripheral portions of cutoff abrasive blades are inserted serve to restrict any axial run-out of the cutoff abrasive blades during rotation. Cutting fluid is fed from the feed nozzle through slits to the rotating cutoff abrasive blades and eventually to points of cutoff machining on the magnet block.

Abstract: A device for treating wafers on assembly carriers is disclosed. A wafer to be treated can be fixed on a liquid film that is located between the front side of the wafer and the assembly carrier by freezing of the film.

Abstract: A method for slicing wafers from a workpiece includes providing wire guide rolls each having a grooved coating with a specific thickness and providing rings at opposing ends of a first of the coatings of a respective wire guide roll. The rings are fixed exclusively to the first coating. A sawing wire including wire sections disposed in a parallel fashion is tensioned between the wire guide rolls. The wire sections of the sawing wire are moved relative to the workpiece so as to perform a sawing operation. A change in length of the first coating, brought about by a temperature change, is measured by measuring distances between sensors and the rings. The wire guide rolls are cooled in a manner dependent on the measured distances.

Abstract: According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.

Abstract: A method for operating a machining tool, comprising: setting a flow rate and a pressure of a flow of coolant to a target flow rate and a pressure target, respectively, the coolant flow being provided to the machining tool; machining a work-piece using the machining tool; measuring the flow rate and the pressure of the flow of coolant; and detecting an anomaly with respect to the coolant flow; and taking a corrective action depending on the type of the detected anomaly.

Abstract: A tool assembly for machining a bore. The tool assembly includes a cutting tool and a tool holder. The cutting tool has an abrasive grit disposed continuously around a circumference of the cutting tool. The tool holder has a first coolant passage and a secondary coolant passage that extends at an angle from the first coolant passage.

Abstract: The invention provides a method and apparatus for removing magnetic or magnetized contaminants from a wiresaw cutting slurry during a wiresaw cutting process. The apparatus comprises a recirculating slurry dispensing system that defines the slurry flow pathway. The recirculating dispensing slurry system comprises a magnetic separator for removing magnetic or magnetizable contaminants from the slurry, wherein the purified slurry is discharged back into recirculation within the recirculating slurry dispensing system.

Abstract: According to one embodiment, a semiconductor device manufacturing method comprises forming a film to be polished on a semiconductor substrate, and performing a CMP method on the film to be polished. The CMP method includes polishing the film to be polished by bringing a surface of the film to be polished into contact with a surface of a polishing pad having a negative Rsk value.

Abstract: A machining method comprises selecting a finished surface dimension and a material property for a working surface, defining a working temperature range based on the selected material property, and defining a machining power based on the working temperature range. The machining power depends on a removal rate and a specific heat of the working surface. The working surface is machined at the removal rate to achieve the finished surface dimension, and the machine power is controlled to maintain the working surface within the working temperature range. The working surface is heated or cooled from the working temperature range to a transition temperature range, such that the selected material property is preserved in the working surface.

Abstract: In a method for multiple cutoff machining a rare earth magnet block, a cutting fluid feed nozzle having a plurality of slits is combined with a plurality of cutoff abrasive blades coaxially mounted on a rotating shaft, each said blade comprising a base disk and a peripheral cutting part. The slits in the feed nozzle into which the outer peripheral portions of cutoff abrasive blades are inserted serve to restrict any axial run-out of the cutoff abrasive blades during rotation. Cutting fluid is fed from the feed nozzle through slits to the rotating cutoff abrasive blades and eventually to points of cutoff machining on the magnet block.

Abstract: The invention is directed to a method for slicing an ingot in the form of a wafer by winding a wire around a plurality of grooved rollers and pressing the wire against the ingot while making the wire travel and supplying slicing slurry to the grooved rollers, in which when the ingot is sliced, an amount of displacement of the ingot changing in an axial direction is measured and an amount of axial displacement of the grooved rollers is controlled so as to correspond to the measured amount of axial displacement of the ingot, and thereby, the ingot is sliced while controlling a relative position of the wire relative to an entire length of the ingot changing in the axial direction. As a result, a slicing method and a wire saw apparatus are provided that can perform slicing in such a way that a Bow or a Warp in a wafer obtained by slicing can be reduced, for example, by controlling a slicing path built into an ingot so that, in particular, the slicing path becomes flattened.

Abstract: The present invention provides a method of working a high hardness material including the steps of heating the high hardness material, working the high hardness material by using a polishing tool, cooling the polishing tool at a position which is different from a worked part, and washing the polishing tool at a position which is different from the worked part.

Abstract: The invention relates to a hard finish machine (1) for hard finishing of a workpiece (2), comprising at least two different hard finish tools (3, 4) which are arranged on a tool spindle (5), wherein the tool spindle (5) is arranged movable in the direction (Y) of its axis (6) on a tool carrier (7), wherein the tool carrier (7) is translational movable relatively to a machine bed (8) and wherein the hard finish machine furthermore comprises cooling lubricant supplying means (9) for the supply of cooling lubricant to the machining region between the workpiece (2) and the hard finish tool (2, 3).

Abstract: The invention relates to a hard finish machine (1) for hard finishing of a workpiece (2), comprising at least two different hard finish tools (3, 4) which are arranged on a tool spindle (5), wherein the tool spindle (5) is arranged movable in the direction (Y) of its axis (6) on a tool carrier (7), wherein the tool carrier (7) is translational movable relatively to a machine bed (8) and wherein the hard finish machine furthermore comprises cooling lubricant supplying means (9) for the supply of cooling lubricant to the machining region between the workpiece (2) and the hard finish tool (2, 3).

Abstract: A chemical mechanical apparatus comprises a polishing platen, a roller pad assembly capable of advancing a polishing pad across the platen, a substrate carrier to press a substrate against the polishing pad, and a heater to heat the substrate to a temperature sufficiently high to provide a rate of removal of material from the substrate that compensates for the wear of the polishing pad.

Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.

Abstract: The invention relates to a method for removing at least part of at least one layer of a composite coating that is formed of fibers and at least one resin that is present on the surface of the body of a gas cartridge. In said method, at least one liquid nitrogen stream is dispensed at a temperature less than ?100 DEG C at a pressure of at least 00 bars upon contact with said coating so as to remove at least part of said coating layer present on the body of the gas cartridge.

Abstract: An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.

Abstract: A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus is configured to control a temperature of the polishing surface of the polishing pad by blowing a gas on the polishing pad during polishing. The polishing apparatus includes a pad temperature control mechanism having at least one gas ejection nozzle for ejecting a gas toward the polishing pad and configured to blow the gas onto the polishing pad to control a temperature of the polishing pad, and an atomizer having at least one nozzle for ejecting a liquid or a mixed fluid of a gas and a liquid and configured to blow the liquid or the mixed fluid onto the polishing pad to remove foreign matters on the polishing pad. The pad temperature control mechanism and the atomizer are formed into an integral unit.

Abstract: Embodiments of a polisher for chemical mechanical planarization. The polisher includes a polishing pad structure containing a first reactant therein, and a second reactant in a polishing environment over the polishing pad structure. The first reactant and the second reactant react endothermically upon contact when polishing a wafer surface between the polishing pad structure and the polishing environment.

Abstract: An apparatus for thermal mechanical machining of composite materials includes a head, a drive, and a shaft. The head has an abrasive face. The drive is coupled to the apparatus to move the head to produce abrasion of the composite material by the abrasive face. The shaft includes a passageway that communicates a heated gas to an interface between the abrasive face and the composite material. The gas removes particles that result from the abrasion of the composite material by the abrasive face. The gas can be heated sufficiently to carbonize or vaporize organic constituents of the composite material.

Abstract: A method for treatment of a product wafer temporarily bonded on a carrier wafer with the following steps: grinding and/or backthinning of the product wafer on one flat side facing away from the carrier wafer to a product wafer thickness D of <150 ?m, especially <100 ?m, preferably <75 ?m, even more preferably <50 ?m, especially preferably <30 ?m, surface treatment of the flat side with means for reducing an especially structural intrinsic stress of the product wafer.

Abstract: A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring.

Abstract: A chemical-mechanical polishing tool and a method for preheating the same are disclosed. The chemical-mechanical polishing tool includes: a polishing pad, a deionized water supply channel, a polishing slurry supply channel and a polishing pad conditioner; and the chemical-mechanical polishing tool further includes: a heating apparatus, adapted to heat DI water fed to the DI water supply channel; a temperature sensor, arranged close to the polishing pad to measure a temperature of the polishing pad; and a preheating control system, connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.

Abstract: The present invention is a slicing method and a wire saw apparatus including winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel in a reciprocating direction, in which the ingot is sliced with controlling a temperature of the ingot by supplying a slurry for adjusting an ingot temperature to the ingot independently from the slurry for slicing while the slurry for adjusting an ingot temperature is supplied to the ingot only at the exit side of the wire caused to travel in the reciprocating direction. As a result, there is provided a method and a wire saw apparatus in which rapid cooling of an ingot especially in a time close to end of slicing of the ingot can be alleviated, consequently degradation of a nano-topography can be suppressed, and further high-quality wafers having a uniform thickness can be sliced when slicing the ingot by using a wire saw.

Abstract: An integrated wafer processing system and a method thereof is disclosed. In one embodiment, a wafer stack of sliced wafers includes a base, and a plurality of sliced wafers extending outwardly from the base, where the plurality of sliced wafers are obtained by slicing a portion of a work piece, where the base is an uncut portion which is the remaining portion of the work piece or a plate attached by welding to the plurality of sliced wafers and where the work piece is mono-crystalline or multi-crystalline silicon. Further, the wafer stack of sliced wafers are treated in-situ in cleaning and wet chemical tanks for processes such as damage etching, texturization and oxide etching and also treated in-situ in high temperature furnaces for processes such as diffusion and anti-reflection coating.

Abstract: A wafer slicing method includes winding a wire around rollers and pressing the wire against an ingot while supplying slurry to the rollers. A previously conducted experiment provides a supply temperature profile of the slurry during the slicing process and the relationship to the axial displacement of the rollers. This relationship is used to implement slurry delivery during the slicing process. The resultant wafers are bowed in a uniform direction. This slicing method provides excellent reproducibility in addition to producing wafers that are bowed in a uniform direction.

Abstract: Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.

Abstract: A dynamic pressure in the coolant supplied between a rotating grinding wheel and a rotating workpiece is released by making at least one of oblique grooves on the grinding wheel pass vertically through a contact surface on which a grinding surface of the grinding wheel contacts the workpiece. Where one and the other side intersection points are defined as intersection points at which both ends of each oblique groove respectively cross extension lines of one and the other side edges parallel to a grinding wheel circumferential direction of the contact surface, the other side intersection point of each oblique groove overlaps the one side intersection point of an oblique groove next to each such oblique groove by a predetermined overlap amount in the grinding wheel circumferential direction, and the length in the grinding wheel circumferential direction of the contact surface is made to be shorter than the overlap amount.

Abstract: An abrasive article is disclosed that is suitable for cleaning, sanding, scraping, or other such process of removing an outer layer or adherent matter. The abrasive article includes a plurality of abrasive particles at least partially embedded in a frozen liquid.

Abstract: A method for manufacturing integrated circuits on a wafer includes providing a facility-supplied room temperature solution; controlling the temperature of the facility-supplied room temperature solution to a desired temperature set point to generate a rinse solution; and rinsing a polishing pad using the rinse solution. The wafer is then polished by means of a chemical mechanical polishing process.