Abstract: An inhomogeneous glass ceramic material having a ceramic phase and a glass phase is polished by a method that reduces surface roughness at a preselected temperature to values less than 2 ?. The method includes polishing the surface of the glass ceramic material at a predetermined working temperature with a polishing wheel and/or a suspension and selecting the predetermined working temperature so that differing erosion of the glass phase and the ceramic phase is compensated because of the different thermal expansion coefficients when the glass ceramic material is at the preselected temperature. In the case of the glass ceramic material the working temperature generally should be below the preselected temperature in order to minimize surface roughness.

Abstract: In a conformable lap and related method for finishing ophthalmic lens surfaces, a rigid base surface of the lap defines a nominal ophthalmic lens curvature corresponding to a predetermined range of curvatures. A work surface of the lap is defined by a thin, hard, polymeric material extending adjacent to the base surface for contacting a selected ophthalmic lens surface and conforming to the curvature of the selected surface. A selectively conformable substance consisting of a mixture of thermoplastic and metallic particles forms a layer extending between the rigid base surface and the work surface, and is selectively changeable between solid and non-solid forms.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: Disclosed herein is a block including a block base configured to support a lens for surfacing or finishing, a cover retained to the base, and a formable material disposed between the base and the cover. Further disclosed herein is a system for blocking a lens including a block base configured to support a lens for processing, a cover retained to the base, a formable material disposed between the base and the cover, and a receptacle configured to receive the base to heat and cool the base. Further disclosed herein is a method for blocking a lens includes heating a block to render the formable material pliable, applying a lens to the block, and cooling the block to render the material non-pliable. A method for blocking a lens includes rendering a formable material of a block pliable, deforming the material with a lens, rendering the formable material non-pliable and causing a vacuum between the formable material and the lens to hold the lens to the block.

Abstract: The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.

Abstract: A p-type thermoelectric material is prepared by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot; grinding the alloy ingot to obtain powder of the allow mass; and hot pressing the powder. At least the hot pressing is carried out in the presence of any one of hexane and solvents represented by CnH2n+1OH or CnH2n+2CO (where n is 1, 2 or 3). A dopant may be used at the step of mixing.

Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.

Abstract: In a mechanochemical polishing apparatus, a SiC wafer is held on a wafer holding table. The surface of the wafer to be polished is pressed against a polishing cloth applied to a polishing platen with a predetermined processing pressure. The wafer holding table and polishing platen are then rotated to perform polishing with chemical liquid dropped on the polishing cloth. The chemical liquid includes chromium (III) oxide as abrasive grains and hydrogen peroxide water (oxidizing agent) for improving polishing efficiency.

Abstract: The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.

Abstract: A method for grinding stone materials, particularly marbles, granites and the like, which allows to grind windowsills, steps, staircases and the like, without dripping or even splashing the residual grinding mud around and close to the surfaces being ground. The method includes interposing a layer of gel diluted with water between the surfaces to be ground and the grinding tool. The gel layer is spread over the surface to be ground before passing thereon the grinding tool, which generally consists of a portable orbital grinding machine with diamond abrasives. Preferably, the gel interposed between the surface to be ground and the grinding tool is a neutral and fast gel diluted with 65-90% of water.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: Apparatus and method for producing and metering dry ice pellets and particles selectively from the same apparatus with out modification, by appropriate reversal of a production wheel and accompanying selection of dry ice in the form of block or of pellets for a supply to the production wheel.

Abstract: An end face polishing machine has a jig plate for supporting at least one workpiece. A polishing plate is mounted to undergo rotation and revolving movement. A polishing sheet is disposed over the polishing plate for rotation and revolving movement therewith. An elastic member having a hardness that varies with temperature is disposed between the polishing sheet and the polishing plate. A pressing unit presses the end face of the workpiece against a surface of the polishing sheet during rotation and revolving movement of the polishing plate to thereby polish the end face of the workpiece during a polishing operation. A temperature control unit controls the temperature of the elastic member during the polishing operation to thereby polish the end face of the workpiece into a spherical surface during the polishing operation.

Abstract: A wear ring assembly is provided for use in a workpiece (e.g. a semiconductor wafer) polishing apparatus. The wear ring assembly comprises a wear element and a backing ring. The backing ring includes a fulcrum and is configured to transfer a component of pressure applied to the backing ring to the wear element via the fulcrum. In this manner, a substantially uniform vertical displacement of the wear ring is achieved.

Abstract: Disclosed is a cylindrical grinding machine of the type that a workpiece support device composed of a work head and a foot stock is mounted on a forward upper portion of a bed while a wheel head unit composed of a slide base and a wheel head is mounted on a rear upper portion of the bed. A coolant collecting vent which takes a rectangular shape as viewed from above vertically extends in the bed and opens to the upper surface of the bed to cover an area that extends from under the workpiece on the workpiece support device to under the forward portion of the wheel head unit. A horizontal vent is provided in the bed to open to the rear surface of the bed and to communicate with the collecting vent. A coolant supply device is inserted at a part thereof into the horizontal vent from the rear surface of the bed to extend an inlet opening into the collecting vent.

Abstract: A polishing apparatus that can effectively and efficiently remove potassium and other alkaline metals comprises integrally a polishing unit for polishing an object by means of a polishing agent and a cleaning unit for cleaning the polished object. The polishing unit and the cleaning unit have means for isolating the internal atmosphere from the external atmosphere and the cleaning unit has a means for cleaning the polished object by bringing hot pure water or steam of pure water into contact with the polished object. With a cleaning method hot pure water is brought into contact with the polished object without drying it after having been polished by such a polishing apparatus.

Abstract: A chemical mechanical planarization (CMP) apparatus includes a bath of an aqueous solution. A first holder, which is configured to support a wafer, is disposed within the bath. A first spindle is configured to rotate the first holder. A second holder, which is rotated by a second spindle, is disposed above the first holder. The second holder supports a planarization media, which is disposed within the bath. The planarization media is oriented to face the surface of the first holder on which the wafer is to be supported. The planarization media can be a pad containing polyurethane or a substrate having an overlying abrasive film. The CMP apparatus also can include a system for recirculating and reconditioning the aqueous solution. A method for performing a CMP process also is described.

Abstract: The present invention is a workpiece holder for polishing comprising at least a workpiece holder body having multiple perforated holes for holding a workpiece by vacuum adsorption and a back plate disposed on the back side of the body, which is provided with temperature controlling means or cooling means for the holder body. Thus, there is provided a workpiece holder for polishing, a polishing apparatus and a polishing method, which can provide a workpiece having good flatness by suppressing thermal deformation of the workpiece holder body and deformation of a resin film coated on the workpiece holding surface without degrading flatness of a workpiece held on the workpiece holder in the polishing of the workpiece, even when the number of polishing operation increases.

Abstract: A scraping apparatus in which a scraping process is performed on a surface of a work to be machined to form recesses thereon by converging a laser beam outputted from a laser oscillator by a converging lens and irradiating the converged laser beam onto the work relatively moving to the laser beam for removing some portions by being melted or evaporated from the surface thereof.

Abstract: A method is described for grinding a crankpin of a crankshaft using computer controlled wheelfeed and headstock drives (44,30,24). During a final grinding step leading to finish size the cutting force is maintained on the wheelhead (38) to keep the wheel (34) and pin under a moderate constant load and the rotational speed of the headstock drive (24) is reduced. This serves to prevent bounce and chatter marks appearing in the surface of the pin. The rotational speed is typically in the range of 1 to 5 rpm. During the final step of grinding each pin, the wheelfeed is adjusted so as to remove a sufficient depth of material during a single rotation of the crankshaft, to bring the crankpin to finish size.

Abstract: A plasma assisted cryogenic cleaner for and a method of performing cleaning of a surface that must be substantially free of contaminants has a resiliently mounted nozzle for spraying a cryogenic cleaning medium on the surface. The cleaning is conducted by applying to the substrate surface a mixture of gases selected from the group consisting of oxygen, nitrogen, hydrogen, fluorine, hydrofluorocarbon or a mixture of such gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water and/or have a weakened bonds that they can be removed with a stream of cryogenic medium. The cryogenic and plasma processes can be performed sequentially or simultaneously.

Abstract: A chemical mechanical polishing (CMP) apparatus with temperature control. The apparatus controls circular zone temperature of the wafer. The CMP apparatus comprises a platen; a carrier holding a wafer against the platen; a guide ring disposed at the rim of the carrier to mount the wafer on the carrier; and a heater disposed in the guide ring, in the carrier, or used to heat the slurry. The temperature of the heater is set between 20° C. and 60° C. Thus, the polishing rate at the edge is improved, and the polishing difference between the edge and the center of the wafer is reduced.

Abstract: A thermal-chemical polishing device and method for polishing a diamond film of a workpiece, the device includes a horizontally displaced first rotatable high rpm shaft and a vertically displaced second rotatable high rpm shaft that are perpendicular. The first shaft is made of a material from transition metals or rare-earth elements which undergo a chemical reaction with the diamond film at high temperature. The circumferential surface of the first shaft has a predefined heating region. The second shaft moves axially towards the first shaft to allow the diamond film to make contact with the heating region of the first shaft. A heating unit is provided to heat up the heating region to create a chemical reaction for thermal-chemical polishing to perform while the diamond film is in contact with the heating region. The device of the present invention increases the rate of polishing and also decreases cost.

Abstract: The present invention is an improved apparatus and process for chemical mechanical polishing layers which have a low dielectric constant (K). The present invention lowers the temperature of the material having a low dielectric constant and then polishes that material at the lower temperature. By lowering the temperature of the low K material the hardness or stiffness of the material is improved making it easier to polish and resulting in a more planar surface.

Abstract: Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad that is configured to move from a first point to a second point. A carrier is also included and is configured to hold a substrate to be polished over the polishing pad. The carrier is designed to apply the substrate to the polishing pad in a polish location that is between the first point and the second point. A first sensor is located at the first point and oriented so as to sense an IN temperature of the polishing pad, and a second sensor is located a the second point and oriented so as to sense an OUT temperature of the polishing pad. The sensing of the IN and OUT temperatures is configured to produce a temperature differential that allows monitoring the process state and the state of the wafer surface for purposes of switching the process steps while processing wafers by chemical mechanical planarization.

Abstract: A blast cabinet (10) for ice blasting an article, the cabinet comprising a housing (11) having an interior support (19) for supporting the article. At least one ice blast nozzle (80) is disposed inside the housing and operable to direct a high speed stream of ice particles towards the article. In an embodiment the ice blast nozzle(s) is mounted on a articulated mount (82) wherein the nozzle can be articulated. An energy management system (30, 130) comprising a heating system is provided to facilitate the removal of spent ice particles, and prevent ice accumulation in the enclosure. In an embodiment of the blast cabinet, the energy management system (130) includes a piping assembly (36) a heat exchanger (37) both disposed in the housing.

Abstract: A polishing apparatus includes a top ring for holding a substrate and a polishing table having a polishing surface. The substrate held by the top ring is brought into contact with the polishing surface, and in this state, the polishing table and the substrate are moved relative to each other to thereby polish the substrate. Expendable replacement components to be bonded to the top ring and the polishing table, such as a backing film, a pressure ring and a polishing cloth, are bonded in such a manner that pieces of heat-sensitive adhesive tape are interposed between the expendable replacement components on the one hand and the top ring and the polishing table on the other. The heat-sensitive adhesive tape is switchable between a non-adhesive state and a adhesive state according to whether the temperature thereof is higher or lower than a predetermined set temperature.

Abstract: A chemical mechanical polisher that is equipped with a chilled wafer holder and a chilled polishing pad and a method for operating the chemical mechanical polisher are described. A first heat exchanging fluid is flown into a membrane chamber inside the wafer holder in intimate contact with the backside of the wafer such that the wafer can be sufficiently cooled. A second heat exchanging fluid is circulated in a plurality of surface grooves, or fluid channels provided in the bottom surface of the polishing pad to sufficiently cool the polishing pad during a chemical mechanical polishing process. The slurry suspension contained in-between the wafer surface and the polishing pad can thus be sufficiently cooled.

Abstract: The abrasive machine of the present invention is capable of controlling a shape of an abrasive face of a small abrasive plate. The abrasive machine comprises: a plate holder holding an abrasive plate; a fixed engaging member being fixed to the plate holder and engaging with the abrasive plate; a first O-ring being provided between the fixed engaging member and the abrasive plate; a second O-ring being provided between the plate holder and the abrasive plate; and a fluid supply-discharge mechanism for supplying a fluid to and discharging the same from a zone enclosed by the abrasive plate, the plate holder and the second O-ring. An outer circumferential face of the abrasive plate is separated from an inner circumferential face of the fixed engaging member.

Abstract: A nozzle apparatus for use with an abrasive fluid jet cutting system, and its method of construction and operation, are disclosed that reduce the wear and erosion problems typically experienced in the cutting jet's nozzle. This improved nozzle apparatus comprises (a) a nozzle having an entry port for receiving a slurry consisting of a carrier fluid and abrasive particles, an inner wall for directing the flow of the slurry, and an outlet port through which the slurry exits the nozzle, (b) wherein at least a portion of the nozzle wall is porous, and (c) a lubricating fluid chamber that surrounds the porous portion of the outer wall of the nozzle, the chamber having a port where a lubricating fluid enters the chamber, with the chamber port connecting to an input pipe which connects to a filter for filtering contaminants that might clog the pores of the porous portion of the nozzle.

Abstract: An endpoint detection system in a CMP apparatus has a polishing platen, a polishing pad covering the polishing platen, a chamber located in the polishing platen, and a gas flow system arranged in a periphery of the chamber. The gas flow system has a gas inlet used to flow dry gas into the chamber and a gas outlet used to evacuate water vapor in the chamber. Since the gas flow system can evacuate the water vapor in the chamber, the problem of contaminants such as water droplets has been solved. The endpoint detection can thus be precisely controlled.

Abstract: A method for controlling a polishing characteristic of a polishing pad used in the planarization of a substrate is disclosed. The method includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface are softened and/or be come soluble. The planarizing surface is heated by directing a flow of heated planarizing liquid or a heated gas onto the surface so that the material comprising the planarization surface attains approximately its glass transition temperature. Alternatively, the planarizing surface may be heated by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: A method is disclosed for precision control of pole tip recession of magnetic recording heads. This is achieved by first constructing the head so that the thermal expansion coefficient of the recording head is different from the thermal expansion coefficient of the overcoat. Then the recording head is heated during the lapping process of the slider and recording head. The average and distribution of the recession between the overcoat and the recording head pole tips are improved.

Abstract: The present invention supplies coolant to a grinding wheel surface and reliably guides the coolant to a grinding point on the grinding wheel surface, thereby significantly reducing the amount of coolant to be used.

Abstract: A abstract polishing apparatus has a substrate carrier a substrate and an abrasive member having a polishing surface. The surface is slidingly engaged with the substrate in order to effect polishing. The dressing device includes a light source when generating light rays for irradiating the polishing surface of the abrasive member, whereby dressing the polishing surface. A temperature control system control the temperature of the polishing surface of the abrasive member by sensing the temperature of the polishing surface with the temperature sensor. Mechanical dressing of the polishing surface, in addition to dressing by radiation of the polishing surface, may also be employed in order to flatten the entire polishing surface. The abrasive member preferably includes an abrasive particles, a binder and a photophilic for promoting the dressing of the polishing surface by light rays.

Abstract: A system for cooling a slurry compound used during polishing and grinding is disclosed. In one embodiment, the system includes a cooling module, such as a refrigeration unit, connected to a heat-transfer device, such as a metal coil. The cooling module cools the heat-transfer device. The heat-transfer device cools the slurry compound.

Abstract: A cold-gas-blow-cooling type machining apparatus including a relative movement device which moves a workpiece and a machining tool relative to each other, and a cold-gas-blow supply device which supplies a cold gas blow to a machining point at which the workpiece is machined by the machining tool. The machining apparatus includes: a workpiece-temperature detecting device which detects a temperature of the workpiece; and a machining-condition control device which controls at least one of the relative movement device and the cold-gas-blow supply device, on the basis of the detected temperature of the workpiece. The machining-condition control device includes a cooling-condition control device which controls the cold-gas-blow supply device so as to control at least one of a temperature and a flow rate of the cold gas blow.

Abstract: In the grinding process, grinding fluid is supplied toward the grinding point where a workpiece is ground with a grinding wheel. At the same time, a fluid jet is ejected across the air flow above the grinding point in the rotational direction of the grinding wheel. As a result, the air layers on both lateral sides of the grinding wheel are turned not to head for the grinding point above the same, whereby the grinding fluid is reliably led to the grinding point without being obstructed by the air layers following both lateral sides of the grinding wheel.

Abstract: A grinding method, in which the grinding operation is performed on a plurality of workpieces having different thicknesses with an end surface in the thickness direction of each workpiece being a surface to be ground, includes the steps of holding the workpieces with a holder such that the surfaces to be ground of the individual workpieces are aligned in the same plane, and grinding the surfaces to be ground of the workpieces while the workpieces are held by the holder. An electronic component provided with an element ground by the grinding method, and a variable capacitor provided with an element ground by the grinding method are also disclosed.

Abstract: A polishing slurry prepared by dispersing in a dispersion medium, abrasive grains comprised of a material having a solubility in the dispersion medium at 25° C., of 0.001 g/100 g or higher is used to effectively remove any abrasive grains standing adherent to the surfaces of objects to be polished or the interiors of polishing apparatus after polishing.

Abstract: A polishing slurry prepared by dispersing in a dispersion medium, abrasive grains comprised of a material having a solubility in the dispersion medium at 25° C., of 0.001 g/100 g or higher is used to effectively remove any abrasive grains standing adherent to the surfaces of objects to be polished or the interiors of polishing apparatus after polishing.

Abstract: A method of conserving a facility delivered to a machine during the machine's idle mode is herein described. In one embodiment, the method is directed to a method for conserving coolant water delivery to a semiconductor wafer grinding machine. The system monitors the status of the grinder to determine whether the grinder is active or idle. After the system determines the grinder has entered idle mode, the system reduces the flow of water to the machine. In one embodiment, the flow is simply reduced while, in another embodiment, the flow is terminated. A delay circuit in the system may delay the reduction of the flow rate until some point after entering idle mode. Periodically throughout the idle mode, the system increases the flow of coolant water to the grinder to ensure the temperature of all grinder components remains consistent. The duty cycle of the coolant flow may be adjusted to optimize water conservation and machine readiness.

Abstract: A chemical mechanical polisher that is equipped with a chilled wafer holder and a chilled polishing pad and a method for operating the chemical mechanical polisher are described. A first heat exchanging fluid is flown into a membrane chamber inside the wafer holder in intimate contact with the backside of the wafer such that the wafer can be sufficiently cooled. A second heat exchanging fluid is circulated in a plurality of surface grooves, or fluid channels provided in the bottom surface of the polishing pad to sufficiently cool the polishing pad during a chemical mechanical polishing process. The slurry suspension contained in-between the wafer surface and the polishing pad can thus be sufficiently cooled.

Abstract: A method of polishing and cleaning a glass surface with a single abrasive article. The abrasive article includes ceria abrasive particles dispersed in binder, the abrasive article having a textured, three-dimensional abrasive coating. The method includes contacting the glass surface with the abrasive article at a desired pressure and in the presence of water, and moving the abrasive article and glass in relation to each other under pressure. The water is believed to mediate a chemical reaction involving the ceria and the glass, thereby leaving a haze on the glass surface. With continued motion of the abrasive article in relation to the glass workpiece, without the addition of additional water, the haze is removed.

Abstract: The present invention is directed to a method of controlling polishing processes based upon x-ray fluorescence measurements. In one illustrative embodiment, the method comprises providing a wafer comprised of a layer of insulating material having a barrier metal layer formed thereabove and a layer of copper formed above the barrier metal layer, performing a chemical mechanical polishing operation to remove the barrier metal layer, irradiating at least one area of the wafer with x-rays, and analyzing x-rays leaving the irradiated area to determine the presence of material comprising the barrier metal layer.

Abstract: A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

Abstract: A process for treating an electrostatographic imaging member including providing a hollow cylindrical electrostatographic imaging member having an interior surface, a coated outer surface, a first end and a second end, the interior surface at at least the first end having a coating of adhesive material securing a first end flange to the first end, and propelling solid carbon dioxide pellets against the first end flange and coating of adhesive material with sufficient force to remove the first end flange and coating of adhesive material from the interior surface at at least the first end of the hollow cylindrical electrostatographic imaging member.

Abstract: The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

Abstract: Disclosed is a method and two apparatuses enabling suction control over surface cleaning and scraping. Suction control is necessary so as to obtain good contact between a cleaning/scraping pad and the surface to be cleaned/scraped, thereby achieving efficiency. Also, suction control is required so as to collect debris falling off during the cleaning/scraping process, which may otherwise contaminate the environment. Suction control provides guidance for the movement of a cleaning/scraping pad sucked on the surface of an object. This implies convenience when cleaning/scraping over a large surface area is attempted. Suction action is generated by convecting away surrounding fluid, being either water or air, to produce local negative pressure at the pad position. The disclosed devices are most desirable in cleaning water containers, such as a fish tank or a swimming pool, as well as to collect dusts on scraping the surface of a mortar wall.

Abstract: A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.