Abstract: A method of surface-treating a reactor member for effectively removing a Cr-deficient layer and a work-hardened layer considered to be a cause of stress-corrosion cracking (SCC) under low-stress conditions. The method of surface-treating a reactor member which is worked by bending (step 1) and then processed by a heat treatment (step 2), in which a work-hardened layer is formed by the bending, and in which a Cr-deficient layer is formed due to an oxide film attached by the heat treatment, uses at least one of: acid wash; grinding; electrolytic polishing; electro-discharge machining; surface cutting; surface deoxidation and softening; wet blasting; laser machining; or surface plating (step 3) to remove the work-hardened layer and the Cr-deficient layer from the reactor member or to prevent contact of the work-hardened layer and the Cr-deficient layer of the reactor member with a primary coolant.

Abstract: A short CMP polish process is provided which removes minimal amounts of oxide and reduces defectivity at the surface of the wafer during short periods of rework by maintaining a high pH at the wafer surface in the presence of a high pH slurry. In one embodiment of the present inventions, the first platen of a multi-platen CMP machine is skipped for polishes of a short duration. In a second embodiment, a large amount of slurry is used to prime the second polish platen, thus displacing deionized water at the surface of the wafer which would ordinarily lower the initial pH of the process. Additionally, downforce may be minimized to reduce defectivity.

Abstract: A method of cleaning gas turbine compressors using crushed, solid, sublimable material, such as dry ice, which can be used in during low temperature conditions, poses no risk of ice formation, clogging cooling hole passages, or degrading the emissions from the turbine.

Abstract: In method and apparatus for supplying a slurry for a chemical mechanical polishing (CMP) process, a slurry pre-treatment is provided for minimizing the size of abrasive particles in the slurry. In the slurry supplying method, after applying acoustic energy to the slurry to de-agglomerate agglomerated abrasive particles within the slurry, any remaining oversized abrasive particles having a diameter greater than a reference size are filtered out from the slurry. The acoustic energy application step and the filtering step are repeatedly performed for a predetermined time period while circulating the slurry.

Abstract: A chemical mechanical polishing (CMP) apparatus with temperature control. The apparatus controls circular zone temperature of the wafer. The CMP apparatus comprises a platen; a carrier holding a wafer against the platen; a guide ring disposed at the rim of the carrier to mount the wafer on the carrier; and a heater disposed in the guide ring, in the carrier, or used to heat the slurry. The temperature of the heater is set between 20° C. and 60° C. Thus, the polishing rate at the edge is improved, and the polishing difference between the edge and the center of the wafer is reduced.

Abstract: A method and apparatus for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: An apparatus and method for detecting a process endpoint. The method includes receiving a first data signal and a second data signal and combining the first data signal and the second data signal to generate a combined data signal. The method also includes detecting a peak in the combined data signal, wherein the peak indicates the process endpoint. The apparatus includes a data collection unit capable of receiving a plurality of data signals and a signal analysis unit. The signal analysis unit is capable of combining the plurality of data signals received through the data collection unit to generate a combined data signal and identifying a peak in the combined data signal indicative of the process endpoint.

Abstract: Humidity within the workspace of a cryogenic aerosol spray cleaning system is controlled by circulating the workspace atmosphere through a dehumidifier. Advantageously, the need for purging of the workspace atmosphere prior to each cleaning cycle is eliminated. A system and method are thereby provided for cleaning of large workspaces. The system amd method of the invention are especially well-suited, economical, and practical for cleaning operations in which a dry air or inert gas purge of a large volume cleaning chamber would be impractical.

Abstract: A grinding system with a coolant subsystem including a grinding tool having a grinding surface adapted to grind a part, a nozzle adapted to supply a coolant material, and an arm coupled to the nozzle and to the grinding tool and adapted to allow placement of the nozzle in multiple positions. Each of the positions of the nozzle is preferably substantially tangent to the grinding surface of the grinding tool, which optimizes the transfer of excess heat from the grinding tool and the part.

Abstract: Provided are a wafer polishing method in which, in single side polishing, covering a wafer holding surface (one side surface) with a protective film, a wafer polishing surface (the other side surface) is polished, so that the wafer holding surface can be prevented from being etched and contaminated by a polishing agent; a wafer cleaning method in which the protective film that remains behind on the wafer holding surface after polishing can be efficiently removed, and a waste cleaning solution is easily treated; and a wafer protective film that sufficiently covers the wafer holding surface in polishing but is effectively removed in cleaning.

Abstract: An improved and new process for separating a substrate from a wetted polishing pad in a CMP apparatus has been developed. Following CMP the polishing pad is wetted with a low surface tension liquid and the substrate is moved across the surface of the polishing pad to cause the interface between the substrate and the polishing pad to be wetted with the low surface tension liquid. The force required to cause separation of the substrate from the polishing pad wetted with said low surface tension liquid is reduced by a factor of about 10 to 30% and the breakage of fragile semiconductor wafer substrates during the unloading operation is markedly reduced. Suitable low surface tension liquids are water at a temperature between about 50° C. and 80° C., or solutions of water with long chain surfactants, such as poly-acrylate, poly-vinyl alcohol, butanol, pantanol or isopropol alcohol.

Abstract: A system for characterizing a chemical mechanical polishing process is provided. The system includes a wafer that has a metal, polysilicon, and/or dielectric layer and/or substrate and a temperature sensor located in and/or on the metal, polysilicon and/or dielectric layer and/or substrate. The system also includes a temperature monitoring system that can read the wafer temperature from the temperature sensors and that can analyze the wafer temperature to characterize the chemical mechanical polishing process. Such characterization includes producing information concerning relationships between wafer temperature and polishing rate, polishing uniformity and introduction of defects during polishing. Such relationships are correlated with wafer temperature as related to parameters like polishing time, pressure, speed, slurry properties and wafer/metal layer properties.

Abstract: A method for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: In a conformable lap and related method for finishing ophthalmic lens surfaces, a rigid base surface of the lap defines a nominal ophthalmic lens curvature corresponding to a predetermined range of curvatures. A work surface of the lap is defined by a thin, hard, polymeric material extending adjacent to the base surface for contacting a selected ophthalmic lens surface and conforming to the curvature of the selected surface. A selectively conformable substance consisting of a mixture of thermoplastic and metallic particles forms a layer extending between the rigid base surface and the work surface, and is selectively changeable between solid and non-solid forms.

Abstract: In order to enable the cutting of a soft ceramic green block by a dicing saw with excellent cutting accuracy and at high speed, heat treatment is performed on the ceramic green block to dissociate a plasticizer, thereby improving the hardness of the ceramic green block. Thereafter the ceramic green block is cut by the dicing saw.

Abstract: In a method for ultrafine grinding of solid particulate material to mean particle sizes far below 1 micrometer and/or for mixing of powder and agglomerate material with mean particle sizes in the range of nanometers, the material to be ground and/or mixed and an grinding/mixing additive are filled into a cooled grinding chamber containing loose grinding media. By motion of the grinding media relative to adjacent media and to the walls of the grinding chamber the material is ground to the desired particle size and/or is finely mixed. Subsequently the additive is removed from said material. For the production of particle sizes in the range of nanometers and/or for mixing particles of this size range, the method comprises that grinding and/or mixing is carried out in a cooled atmosphere in the presence of a fine grained solidified additive which is chemically inert to said material, preferably water ice or solid carbon dioxide, at temperatures below their melting or sublimation temperature.

Abstract: A cup-shaped grindstone for grinding an end face of an annular portion of a work to form tooth grooves in the end face includes a grinding portion provided around an outer periphery of a disk portion. Abrasive grains of CBN are electrodeposited on each of first, second and third grinding faces of the grinding portion. Cooling-liquid ejecting bores are provided in a lower end of the first grinding face. To form the tooth grooves, the following steps are carried out: a rough-finish processing step cuts the tooth grooves by intermittently feeding the cup-shaped grindstone in a predetermined amount at a time, and a finish processing step of finishing the tooth grooves by retaining the cup-shaped grindstone at a predetermined position after the rough-finish processing step. During both steps, a cooling liquid is supplied from cooling-liquid ejecting bores defined in the first grinding faces of the cup-shaped grindstone.

Abstract: The first driving shaft 2 is provided with the electric supply equipment 8 such as the metal brush. The second driving shaft 3 is as well too. Further, a nozzle 10 for supplying the conductive coolant is supplied to the grinding portion between the grinding surface 1a and the surface Wa to be ground is provided. When grinding is carried out, the conductive coolant is supplied from the nozzle 10 and by turning on the electricity to the first driving shaft 2 and the second driving shaft 3, a voltage is applied between the grinding surface 1a and the surface Wa to be ground of the work W. Due to electrolysis of that instance, the conductive material of the surface of the grindstone is dissolved in the conductive coolant, simultaneously the clogging of the grinding surface 1a is solved. Accordingly, a super ball finishing using a grindstone of the quite high grain size becomes possible.

Abstract: A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems is provided. The method includes applying radiation to an amount of slurry before the slurry is applied to the upper layer of the wafer. In one example, the method also includes providing a polishing pad and a carrier head configured to hold the wafer. The method further includes creating a mechanical polishing interface between the polishing pad, the upper layer of the wafer, and the radiation exposed slurry by bringing the polishing pad and the carrier head into contact.

Abstract: A chemical mechanical polishing apparatus is described, which includes a platen, a polishing pad that is attached to the platen, and a means for adjusting the temperature of the polishing pad.

Abstract: A method for cutting up a workpiece which is in rod or block form by means of a saw, wherein the temperature of the workpiece is measured during the cutting, and the measurement signal is transmitted to a control unit, which generates a control signal which is used to control the temperature of the workpiece, or wherein the temperature of the workpiece is controlled during the cutting by a control signal based on a predetermined control curve.

Abstract: A chemical mechanical polishing machine is provided with a platen that has an integral sub-pad. A fixed abrasive polishing layer is mounted, without adhesive between the polishing layer and the sub-pad, to the top surface of the platen and the sub-pad. The polishing layer is vacuum mounted, for example, to the integral sub-pad of the platen. A cooling arrangement is provided in the platen that cools the polishing layer and improves product quality.

Abstract: A process for forming a semiconductor wafer which is single side polished improves nanotopology and flatness of the polished wafer. The process reduces the effect of back side surface features, such as edge ring phenomena and back side laser marks, on nanotopology, thereby improving oxide layer uniformity for chemical/mechanical planarization (CMP) processing, and flatness on the polished front side of the wafer after polishing. The wafer is mounted on a polishing block by wax. The edge ring causes certain deformation and stress in the wafer upon mounting, which is held by the wax. After mounting, the wax is heated to allow the wafer to relax, removing the stress, without degrading the bond of the wafer to the polishing block. The wafer is polished and removed from the polishing blocks. The polished surface substantially retains its shape after being de-mounted from the block.

Abstract: Systems and methods for prevention of condensation of ambient water vapor due to evaporation of frozen carbon dioxide particles used to clean data storage tapes. Various embodiments maintain conditions under which condensation cannot form in the ambient environment immediately surrounding a portion of a rigid surface on which the tape is maintained in thermodynamic contact and under tension (e.g., a metallic capstan around which the tape is wrapped).

Abstract: The present invention is a workpiece holder for polishing comprising at least a workpiece holder body having multiple perforated holes for holding a workpiece by vacuum adsorption and a back plate disposed on the back side of the body, which is provided with temperature controlling means or cooling means for the holder body. Thus, there is provided a workpiece holder for polishing, a polishing apparatus and a polishing method, which can provide a workpiece having good flatness by suppressing thermal deformation of the workpiece holder body and deformation of a resin film coated on the workpiece holding surface without degrading flatness of a workpiece held on the workpiece holder in the polishing of the workpiece, even when the number of polishing operation increases.

Abstract: A method is disclosed for precision control of pole tip recession of magnetic recording heads. This is achieved by first constructing the head so that the thermal expansion coefficient of the recording head is different from the thermal expansion coefficient of the overcoat. Then the recording head is heated during the lapping process of the slider and recording head. The average and distribution of the recession between the overcoat and the recording head pole tips are improved.

Abstract: A device for regulating an amount of liquid fed to a hand-held tool for treating a constructional component and including a base body (1) connectable to the hand-held tool (38), an outlet channel (2) extending parallel to an axis of the base body and an outlet opening of which is located in a region of the connection of the base body with the tool, an inlet channel (7) extending relative to the outlet channel at an angle from 20° to 90°, and a valve member (12) arranged in the base body (1) for connecting the inlet channel (7) with the outlet channel (2) and having a manually adjustable adjustment member (15).

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: In a method and an apparatus for supplying coolant in a grinding machine while the grinding machine grinds, a cooling nozzle and a cleaning nozzle are mounted on a moving member, and the moving member is moved in a direction identical with a first normal line, relative to the grinding wheel, at a first predetermined angle away from a reference straight line perpendicular to an axis of a main spindle. The reference straight line passes through a grinding point. Accordingly, the cooling nozzle injects the coolant with an injecting outlet port directed in a direction of a tangential line, of the grinding wheel, passing through the grinding point. The cleaning nozzle injects the coolant with an injecting outlet port directed in a direction of a normal line relative to the grinding wheel.

Abstract: A method for cutting a rare earth alloy using a wire with abrasive grains fixed to a core wire, including the step of cutting the rare earth alloy with the wire traveling in a state that a portion of the rare earth alloy to be cut with the wire is immersed in a coolant containing water as the main component, the coolant having a surface tension at 25° C. in a range of 25 mN/m to 60 mN/m.

Abstract: A polishing apparatus for reducing the roughness and abrasive shedding of coated tapes comprises a cylinder having coaxial channels or grooves of various forms, which are advantageously thread-like. Axial grooves may be additionally provided.

Abstract: A polishing apparatus can improve the uniformity of thickness within a workpiece or reduce thickness variation between serially polished workpieces. The polishing apparatus comprises a polishing unit having a polishing tool for providing a polishing surface and a workpiece holding device for holding the workpiece. A polishing solution or liquid supplying device is provided for supplying a polishing solution or liquid into a polishing interface between the surface of the workpiece and the polishing surface. A temperature of the polishing interface is controlled according to at least an ambient temperature of a polishing space surrounding the polishing unit, as a variable parameter.

Abstract: A polishing apparatus can produce a uniform quality of polished products by supplying a polishing solution consistently without being affected by any disturbances in the solution supply source. The polishing apparatus comprises: a polishing section for polishing a workpiece by pressing the same against a polishing tool; a solution piping assembly to be connected to an external solution supply device for transferring a polishing solution therefrom to the polishing section; and a solution suction device provided in the solution piping assembly for introducing the polishing solution from the solution supply device to the polishing section at a desired flow rate.

Abstract: A chemical mechanical polishing apparatus is described, which includes a platen, a polishing pad that is attached to the platen, and a means for adjusting the temperature of the polishing pad.

Abstract: The present invention provides a labyrinth seal for use with a workpiece planarization apparatus, such as a chemical mechanical planarization apparatus. In accordance with one aspect of the invention, there is provided a labyrinth seal comprising a member having at least one sloped feature which is configured to inhibit a fluid from traveling into and through the labyrinth.

Abstract: A workpiece such as a semiconductor wafer is polished to a planar finish by a polishing apparatus. The polishing apparatus comprises a turntable having a polishing surface thereon, a top ring for holding a workpiece and pressing the workpiece against the polishing surface, a dressing apparatus having a dresser element for dressing the polishing surface by bringing the dresser element into contact with the polishing surface, and a temperature control device for controlling the temperature of the dresser element before dressing and/or during dressing.

Abstract: The present invention provides a wafer polishing apparatus capable of controlling the polishing quantity accurately.

Abstract: A magnet member cutting apparatus comprises a temperature controller for temperature control of a coolant. The coolant at a temperature controlled by the temperature controller is supplied to a cutting region from a coolant discharging device via a coolant supplying path. While the coolant is supplied to the cutting region, a magnet member which is a sintered rare-earth magnet member is cut by a cutting blade having a cutting edge including a mixture of abrasive grain made of a super hard abrasive grain and heat resistant resin made of a phenol resin. Preferably, the coolant is used in circulation, the coolant temperature is maintained at 20° C.˜35° C., the cutting blade rotating speed is 1000 m/min˜3000 m/min, a volume rate of the abrasive grain to the cutting edge is 10%˜50%, and the cutting edge further includes metal powder.

Abstract: A machining location for machining workpieces, comprising: a machine tool; an enclosure for said machine tool that encloses the entire machine tool within a predetermined space; workpiece storage within said predetermined space for storing workpieces at least prior to being worked on by said machine tool and for subjecting such workpieces when so stored to said machining environment to become oriented thereto. The machining location is mounted and supported to be separate from and independent of said machine tool so that vibrations are not transmitted from said enclosure to said machine tool. The machining location further comprises ambient environment controls for effecting control of at least the temperature of the air within said predetermined space.

Abstract: Areas of different temperatures are provided on a semiconductor wafer to improve uniformity in polishing rates during CMP.

Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.

Abstract: A method is described for temperature endpointing of a CMP process. A temperature sensor (110) detects temperature changes when the CMP polishing process transitions between different materials.

Abstract: The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

Abstract: A spiral-flow barrel finishing machine having a cylindrical stationary barrel and a rotary barrel closed at the bottom thereof includes an escape layer or air layer is provided between the inner side of the metallic wall of the stationary barrel and the outer side of a lining layer being formed thereon and for allowing for the outwardly thermal expansion of the lining layer.

Abstract: A method and apparatus for supporting, cleaning and/or drying a polishing pad used for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a cleaning head positioned adjacent a post-operative portion of the polishing pad to clean and/or dry the rear surface of the polishing pad. The cleaning head can include a heat source, a mechanical contact element, and/or orifices that direct fluid and/or gas toward the rear surface. The apparatus can further include a vessel through which the rear surface of the polishing pad passes to clean the rear surface. The apparatus can also include a flow passage in fluid communication with a region between the polishing pad and a support pad upon which the polishing pad rests during planarization. Gas moves through the flow passage toward or away from an interface region between the polishing pad and the support pad to draw the polishing pad toward or away from the support pad.

Abstract: A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, the method can include engaging a microelectronic substrate with a polishing surface of a polishing pad, electrically coupling a conductive material of the microelectronic substrate to a source of electrical potential, and oxidizing at least a portion of the conductive material by passing an electrical current through the conductive material from the source of electrical potential. For example, the method can include positioning first and second electrodes apart from a face surface of the microelectronic substrate and disposing an electrolytic fluid between the face surface and the electrodes with the electrodes in fluid communication with the electrolytic fluid. The method can further include removing the portion of conductive material from the microelectronic substrate by moving at least one of the microelectronic and the polishing pad relative to the other.

Abstract: A method of using a finishing element having a fixed abrasive finishing surface including organic boundary lubricants for finishing semiconductor wafers is described. The organic lubricants form an organic lubricating boundary layer in the operative finishing interface in a preferred coefficient of friction range. The selected coefficient of friction helps improve finishing and reduces unwanted surface defects. Differential lubricating boundary layer methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing.

Abstract: A method for the production of a glass substrate for magnetic recording mediums comprises the steps of sandwiching an abrasion board for correction between upper and lower surface tables of a both side-polishing device for polishing the glass substrate, while these upper and lower surface tables are fitted to the polishing device, rotating the upper and lower surface tables in the opposite directions while supplying cooling water to thus polish the surface of these tables to a flatness of the table surface on the order of not more than 30 &mgr;m; then adhering abrasion cloths to the upper and lower surface tables, respectively; thereafter repeatedly polishing the surface of the glass substrate for magnetic recording mediums. The production method permits the efficient production of an excellent glass substrate for magnetic recording mediums.

Abstract: A half toroidal CVT disk having an inner surface portion, an outer surface portion and a toroidal surface having a given machining allowance is centered with said inner surface portion worked prior to the heat treatment of said half toroidal CVT disk as the standard thereof, and then is chucked by a chuck mechanism. The toroidal surface of the chucked half toroidal CVT disk is ground by a grinding mechanism with the grinding wheel for grinding the half toroidal CVT disk in a state that one of said half toroidal CVT disk and said tool is inclined at a given angle with respect to the other.

Abstract: Lithium niobate and tantalate crystal rods or boules are sawed to wafers with diamond edged saws in the presence of inert fluorinated lubricating liquids.