Abstract: Some embodiments of the invention include a memory device has a number of memory segments connected to a supply source through a supply control circuit. The supply control circuit isolates a selected memory segment from the supply source when the selected memory segment is defective. The memory device replaces a defective memory segment with a redundant segment. Other embodiments are described and claimed.

Abstract: A semiconductor memory device includes plural banks, defect relief circuits individually provided for these banks, a defective-address storing circuit that stores defective addresses, and a comparing circuit that compares an access-requested address with a defective address. The defective-address storing circuit and the comparing circuit are allocated in common to two banks, respectively. With this arrangement, a chip area can be decreased.

Abstract: An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.

Abstract: For recording or replaying in real-time digital high bandwidth video signals, e.g. HDTV, HD progressive or HD film capture signals, very fast memories are required. For storage of streaming HD video data NAND FLASH memory based systems could be used. Flash memory devices are physically accessed in a page oriented mode. According to the invention, the input data are written in a multiplexed fashion into a matrix of multiple flash devices. A list processing is performed that is as simple and fast as possible, and defect pages of flash blocks of single flash devices are addressed within the matrix architecture. When writing in a sequential manner, the data content for the current flash device page of all flash devices of the matrix is copied to a corresponding storage area in an additional memory buffer. After the current series of pages has been written without error into the flash devices, the corresponding storage area in an additional memory buffer is enabled for overwriting with following page data.

Abstract: A semiconductor integrated circuit has a memory circuit having memory cells, a first register, a second register, a register selection circuit having an input to which an output of the first register and an output of the second register are connected, a memory bypass circuit which is located between a first switching circuit and a second switching circuit, and connected to the inputs and the outputs of the memory circuit. The register selection circuit is switched to the output signals of the first register when performing testing by way of the memory circuit, and switched to output signals of the second register when performing testing by way of the memory bypass circuit.

Abstract: A method and system for repairing a memory. A test and repair wrapper is operable to be integrated with input/output (I/O) circuitry of a memory instance to form a wrapper I/O (WIO) block that is operable to receive test and repair information from a built-in self-test and repair (BISTR) processor. Logic circuitry associated with the WIO block is operable generate a current error signal that is used locally by the BISTR processor for providing a repair enable control signal in order to repair a faulty memory portion using a redundant memory portion without having to access a post-processing environment for repair signature generation.

Abstract: Techniques for coding and decoding redundant coding for column defects cartography. Defective cell groups identified in a memory array are redundantly encoded with a different bit pattern than the bit pattern used for functional cell groups. The identified defective cell groups are repaired using redundant cell groups in the memory array. The defective cell groups are later re-identified by checking the redundant bit pattern encoded in the cell groups. If new defective cell groups are identified, the memory array is identified as failing. If no new defective cell groups are identified, the memory array is identified as passing, and the identified defective cell groups are repaired.

Abstract: A memory redundancy reconfiguration for N base blocks associated with k redundant blocks. The data will be written into both base blocks and defect-free redundant blocks if the base blocks are defective; k multiplexers MUXRi each having N input signals (d0 to dN?1) capable of being connected to k input signals of the redundant blocks; N multiplexers MUXi each having k+1 input signals from k redundant blocks (R0 to Rk?1) and one base block (Ni), capable of being connected to N output signals (qi); and logic means associated with each multiplexer, to convert the input signals of the multiplexer to its output signal.

Abstract: A memory device includes a main memory cell array and a redundant memory cell array configured to store a first parity code for data stored in the main memory cell array. The device further includes a parity generator configured to generate a second parity code responsive to reading of the stored data from the main memory cell array, and a comparator configured to compare the first and second parity codes. In some embodiments, the parity generator configured to generate the second parity code during a copyback operation.

Abstract: A built-in redundancy analyzer and a redundancy analysis method thereof for a chip having a plurality of repairable memories are provided. The method includes the following steps. First, the identification code of a repairable memory containing a fault (“fault memory” for short) is identified and a parameter is provided according to the identification code. The parameter includes the length of row address, the length of column address, the length of word, the number of redundancy rows, and the number of redundancy columns of the fault memory. Since the parameter of every individual repairable memory is different, the fault location is converted into a general format according to the parameter for easier processing. A redundancy analysis is then performed according to the parameter and the converted fault location, and the analysis result is converted from the general format to the format of the fault memory and output to the fault memory.

Abstract: Disclosed are systems and methods of producing electronic devices including an auxiliary circuit mounted on another, underlying, circuit at the wafer level. The auxiliary circuit is electrically connected to the underlying circuit via micro-scale interconnects. The systems are capable of testing the auxiliary circuit and/or interconnects using an interface within the underlying circuit. For example, the auxiliary circuit may be tested although it is mounted such that the interconnects are hidden, i.e., inaccessible for testing purposes after assembly using conventional testing systems and methods. The systems and methods further allow for including excess circuits and/or excess interconnects that can be reconfigured to replace parts of the auxiliary circuit and/or micro-scale interconnects found defective during testing.

Abstract: A design structure embodied in machine readable medium used in a design process includes a system for implementing a memory column redundancy scheme. The system comprises a core array having a plurality of columns and a redundancy column each configured for reading or writing a bit of information and circuitry for steering around a defective column in the core array, wherein the circuitry includes one column multiplexor, which results in having the memory column redundancy scheme include one multiplexing stage.

Abstract: A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; wherein the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.

Abstract: A system for repairing embedded memories on an integrated circuit includes an external Built-In Self-repair Register (BISR) associated with every reparable memory. Each BISR is serially configured in a daisy chain with a fuse box controller. The controller determines the daisy chain length upon power up. The controller may perform a corresponding number of shift operations to move repair data between BISRs and a fuse box. Memories can have a parallel or serial repair interface. The BISRs may have a repair analysis facility into which fuse data may be dumped and uploaded to the fuse box or downloaded to repair the memory. Pre-designed circuit blocks provide daisy chain inputs and access ports to effect the system or to bypass the circuit block.

Abstract: A test interface receives a test command designating execution of a test for a memory cell. The test storage circuit stores test information necessary to execute the test. The test storage circuit includes an erasable programmable storage unit. The decoder decodes the test command input to the test interface, and selects the test information stored in the test storage circuit. The sense amplifier reads out, from the test storage circuit, the test information selected by the decoder. The holding circuit holds the test information read out by the sense amplifier. The control circuit controls a test operation of checking whether the memory cell normally operates, on the basis of the test information held in the holding circuit. The defect storage circuit is formed for the memory cell, and stores fail information indicating that the memory cell is defective if the memory cell does not normally operate in the test operation.

Abstract: The present invention provides a method and system for improving memory testing efficiency, raising the speed of memory testing, detecting memory failures occurring at the memory operating frequency, and reducing data reported for redundancy repair analysis. The memory testing system includes a first memory tester extracting failed memory location information from the memory at a higher memory operating frequency, an external memory tester receiving failed memory location information at a lower memory tester frequency, and an interface between the first memory tester and the external memory tester. The memory testing method uses data strobes at the memory tester frequency to clock out failed memory location information obtained at the higher memory operating frequency. In addition, the inventive method reports only enough information to the external memory tester for it to determine row, column and single bit failures repairable with the available redundant resources.

Abstract: Methods and apparatuses for enabling a redundant memory element (20) during testing of a memory array (14). The memory array (14) includes general memory elements (18) and redundant memory elements (20). The general memory elements (18) are tested and any defective general memory elements (18) are replaced with redundant memory elements (20). The redundant memory elements (20) are tested only when they are enabled.

Abstract: An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.

Abstract: A memory device includes a latch component including a first input configured to receive a functional data bit associated with a functional operation, a second input configured to receive a memory test/repair data bit associated with a memory test operation, and a latch comprising a data input and a data output and select logic configured to selectively connect one of the first input or the second input to the data input of the latch based on a mode of operation of the memory device. A method includes operating a memory device in a first mode associated with a memory test operation and in a second mode associated with a functional operation. The method further includes storing a memory test/repair data bit at a latch component of the memory device in the first mode and storing a functional data bit at the latch component in the second mode.

Abstract: There is provided a repair method of a multi-chip that comprises a plurality of memory chips, each of the memory chips storing information with respect to remaining redundancy cells after repairing at a chip level. The repair method includes testing one of the plurality of memory chips; when the tested memory chip is judged to be defective, checking whether the tested memory chip is repairable, based on the stored information of the remaining redundancy cells; and when the tested memory chip is judged to be repairable, repairing the tested memory chip.

Abstract: SRAM macro sparing allows for full chip function despite the loss of one or more SRAM macros. The controls and data flow for any single macro within a protected group are made available to the spare or spares for that group. This allows a defective or failed SRAM macro to be shut off and replaced by a spare macro, dramatically increasing manufacturing yield and decreasing field replacement rates. The larger the protected group, the fewer the number of spares required for similar improvements in yield, but also the more difficult the task of making all the controls and dataflow available to the spare(s). In the case of the Level 2 Cache chip for the planned IBM Z6 computer, there are 4 protected groups with 192 SRAM macros per group. Each protected group is supplanted with an additional 2 spare SRAM macros, along with sparing controls and dataflow that allow either spare to replace any of the 192 protected SRAM macros.

Abstract: A mechanism is provided for using a single bank of electric fuses (eFuses) to successively store test data derived from multiple stages of testing are provided. To encode and store array redundancy data from each subsequent test in the same bank of eFuses, a latch on a scan chain is used that holds the programming information for each eFuse. This latch allows for programming only a portion of eFuses during each stage of testing. Moreover, the data programmed in the eFuses can be sensed and read as part of a scan chain. Thus, it can be easily determined what portions of the bank of eFuses have already been programmed by a previous stage of testing and where to start programming the next set of data into the bank of eFuses. As a result, the single bank of eFuses stores multiple sets of data from a plurality of test stages.

Abstract: A method and apparatus for repairing cache memories/arrays is described herein. A cache includes a plurality of lines and logically viewable in columns. A repair cache coupled to the cache includes a repair bit mapped to each logically viewable column. A repair module determines a bad bit to be repaired within a column based on any individual or combination of factors, such as the number of errors per line of the cache, the number of errors correctable per line of the cache due to error correction code (ECC), the failure rate of bits, or other considerations. The bad bit is transparently repaired by the repair bit mapped to the column including the bad bit, upon an access to a cache line including the bad bit.

Abstract: Methods, apparatus and systems pertain to performing READ, WRITE functions in a memory which is coupled to a repair controller. One such repair controller could receive a row address and a column address associated with the memory and store a first plurality of tag fields indicating a type of row/column repair to be performed for at least a portion of a row/column of memory cells, and a second plurality of tag fields to indicate a location of memory cells used to perform the row/column repair.

Abstract: A memory device has an error documentation memory array that is separate from the primary memory array. The error documentation memory array stores data relating to over-programmed bits in the primary array. When the over-programmed bits in the primary array are erased, the error documentation memory array is erased as well, deleting the documentation data relating to the over-programmed bits.

Abstract: An apparatus and method for a processor-memory unit for use in system-in-package (SiP) and system-in-package (SiP) integrated circuit devices. The apparatus includes a processing module, a memory module and a programmable system module. The programmable system module is configured to function as an interface between the memory module and the processing module, or as an interface between the memory module and a testing device. The invention facilitates integration and testing of processor-memory units including functional components having different communication protocols.

Abstract: A semiconductor memory device which has a normal memory cell array and a redundant memory cell array for replacing a failure bit in the normal memory cell array, having: a memory cell array having a plurality of word lines, a plurality of bit line pairs crossing the word lines, and a plurality of memory cells placed at the crossing positions; and a plurality of sense amplifier circuits which are placed between adjacent memory cell arrays and are shared by bit line pairs of memory cell arrays on both sides. And a current interrupting circuit for disconnecting the sense amplifier and the bit line pairs in a column having a failure is formed respectively between the sense amplifier circuit and the bit line pairs on both sides. By this current interrupting circuit, short-circuit current from the sense amplifier circuit to the shorted area can be suppressed.

Abstract: A semiconductor integrated circuit has a cell array, a redundancy cell capable of replacing a defective cell, a redundancy control circuit, a plurality of first fuses, a plurality of second fuses, a plurality of third fuses, a first shift register configured to hold states of the plurality of first fuses, a second shift register configured to be connected in cascade to the first shift register and to hold states of the plurality of second fuses, a third shift register configured to be connected to the first and second shift registers in cascade and to hold states of the plurality of third fuses, a CRC remainder calculator configured to sequentially input information held by the first to third shift registers to a CRC generating equation to calculate a remainder obtained by division, and a CRC determination part that outputs information indicative of whether the first to third fuses are correctly programmed.

Abstract: A data processing method is provided. Target page data are read from a memory cell array and addresses of multiple programmed-error bits are stored. A first syndrome polynomial and a second syndrome polynomial are obtained according to the target page data, and the target page data are saved as a first codeword and a second codeword. An errata locator polynomial is obtained according to the syndrome polynomials, and a first error count and a second error count are obtained according to the errata locator polynomial, the first codeword and the second codeword. A set of reference codes is obtained according to the errata locator polynomial. Read page data are outputted according to the addresses of the programmed-error bits, the first error count and the second error count. The read page data are corrected according to the set of reference codes to obtain corrected read page data.

Abstract: A method and apparatus for repairing cache memories/arrays is described herein. A cache includes a plurality of lines and logically viewable in columns. A repair cache coupled to the cache includes a repair bit mapped to each logically viewable column. A repair module determines a bad bit to be repaired within a column based on any individual or combination of factors, such as the number of errors per line of the cache, the number of errors correctable per line of the cache due to error correction code (ECC), the failure rate of bits, or other considerations. The bad bit is transparently repaired by the repair bit mapped to the column including the bad bit, upon an access to a cache line including the bad bit.

Abstract: Disclosed is a build-in self-diagnosis and repair method and apparatus in a memory with syndrome identification. It applies a fail-pattern identification and a syndrome-format structure to identify at least one type of faulty syndrome in the memory during a memory testing, then generates and exports fault syndrome information associated with the corresponding faulty syndrome. According to the fault syndrome information, the method applies a redundancy analysis algorithm, allocates spare memory elements and repairs the faulty cells in the memory. The syndrome-format structure respectively applies single-faulty-word-syndrome format, faulty-row-segment-syndrome format, and faulty-column-segment-syndrome format for different faulty syndromes, such as faulty row segments and single faulty words, faulty column segments and single faulty words, all of single faulty words, faulty row segments and faulty column segments, and so on.

Abstract: A memory array comprising a plurality of rows and a plurality of columns, each row comprising at least one addressable word, said memory array comprising at least one redundant row and at least one redundant column; error detection circuitry for analysing said memory array, by addressing words within said memory array and detecting errors within said addressed words; error repair circuitry for selecting for a detected error either a redundant row or a redundant column to replace one of said row or column containing said error; wherein said error repair circuitry is configured to determine for said detected error whether said error is a single error bit in said addressed word or whether it is one of a plurality of error bits within said word, and if said error is said one of said plurality of errors, said error repair circuitry is configured to preferentially select a redundant row rather than a redundant column to repair said error.

Abstract: There is provided a test apparatus for testing a memory under test that includes therein a plurality of blocks and one or more repairing columns.

Abstract: A method for managing bad memory blocks of a nonvolatile-memory device, in which the available memory blocks are divided into a first set, formed by addressable memory blocks that are to be used by a user, and a second set, formed by spare memory blocks that are to replace bad addressable memory blocks, and in which the bad addressable memory blocks are re-mapped into corresponding spare memory blocks. The re-mapping of the bad addressable memory blocks envisages: seeking bad spare memory blocks; storing the logic address of each bad spare memory block in a re-directing vector in a position corresponding to that of the bad spare memory block in the respective set; seeking bad addressable memory blocks; and storing the logic address of each bad addressable memory block in a free position in the re-directing vector.

Abstract: Methods and systems for improving repairing efficiency in non-volatile memory. Repairing data may be read from an information array associated with the non-volatile memory. The repairing data is generally read to a volatile latch associated with the non-volatile memory. An error correction coding circuit (ECC) circuit can be enabled during reading of the repairing data for identifying and repairing defective columns or rows associated with the non-volatile memory, despite errors in the repairing data read out.

Abstract: A semiconductor integrated circuit has a memory circuit having memory cells, a first register, a second register, a register selection circuit having an input to which an output of the first register and an output of the second register are connected, a memory bypass circuit which is located between a first switching circuit and a second switching circuit, and connected to the inputs and the outputs of the memory circuit. The register selection circuit is switched to the output signals of the first register when performing testing by way of the memory circuit, and switched to output signals of the second register when performing testing by way of the memory bypass circuit.

Abstract: The present invention provides a semiconductor integrated circuit having area efficiency and repair efficiency improved by sharing a redundant memory macro among a plurality of SRAM macros. Each of the plurality of memory macros 1A1 and 1A2 includes a memory cell array 1A-3 connected to word lines WL1 to WL32 and bit lines and a redundant circuit that replaces a defective bit line of the memory cell array to a normal bit line and a redundant bit line BLA65 and outputs defect information to a redundant signal line RA. The redundant memory macro 2A includes a redundant memory cell array connected to redundant word lines and the redundant bit line, and a first word line connection circuit that connects a word line corresponding to a memory macro to be repaired and disconnects a word line corresponding to a normal memory macro from the redundant word line.

Abstract: A method and system for determining element voltage selection control values for a storage device provides energy conservation in storage arrays while maintaining a particular performance level. The storage device is partitioned into multiple elements, which may be sub-arrays, rows, columns or individual storage cells. Each element has a corresponding virtual power supply rail that is provided with a selectable power supply voltage. At test time, digital control values are determined for selection circuits for each element that set the virtual power supply rail to the minimum power supply voltage, unless a higher power supply voltage is required for the element to meet performance requirements. The set of digital control values can then be programmed into a fuse or used to adjust a mask at manufacture, or supplied on media along with the storage device and loaded into the device at system initialization.

Abstract: A method for testing memory in an integrated circuit device is disclosed. The method includes executing a test routine in a portion of the memory at a speed sufficient to fully test the memory cells, identifying faulty memory cells in the tested portion of the memory; writing an error map in another portion of the memory, the error map indicating the location of faulty memory cells found in the tested portion and, after executing the test routine and writing the error map, repairing at least some of the faulty memory cells using the error map. Once one portion of memory is tested, another portion is tested and a prior tested portion is used to write a new error map. Repairing, by analyzing the error map, is done at a slower speed than required for memory testing, allowing the use of a smaller logic section in the integrated circuit.

Abstract: A semiconductor memory test device and method thereof are provided. The example semiconductor memory test device may include a fail memory configured to store at least one test result of a memory under test, a mode selecting unit configured to output a selection signal for selecting a memory address protocol of the fail memory based upon which one of a plurality of test modes is active in the memory under test and an address arranging unit configured to arrange address signals to conform with the selected memory address protocol in response to the selection signal received from the mode selecting unit.

Abstract: A storage device comprising has a storage medium, a read-write mechanism, an object-based file system interface, and a controller. The read-write mechanism is adapted to read and to write data from and to the storage medium. The object-based file system interface within the storage device is adapted to organize and access data on the storage medium as objects and to access attributes of each data object. The controller is adapted to generate redundancy data for each data object to be stored on the storage medium according to the associated attributes and to store the data object and its associated redundancy data on the storage medium.

Abstract: SRAM macro sparing allows for full chip function despite the loss of one or more SRAM macros. The controls and data flow for any single macro within a protected group are made available to the spare or spares for that group. This allows a defective or failed SRAM macro to be shut off and replaced by a spare macro, dramatically increasing manufacturing yield and decreasing field replacement rates. The larger the protected group, the fewer the number of spares required for similar improvements in yield, but also the more difficult the task of making all the controls and dataflow available to the spare(s). In the case of the Level 2 Cache chip for the planned IBM Z6 computer, there are 4 protected groups with 192 SRAM macros per group. Each protected group is supplanted with an additional 2 spare SRAM macros, along with sparing controls and dataflow that allow either spare to replace any of the 192 protected SRAM macros.

Abstract: Memory array repair where the repair logic cannot operate at the same operating condition as the memory array is presented. In one embodiment, a test is run with the memory array configured in a first operating condition that repair logic for the memory array cannot achieve, and test data is accumulated from the test in the memory array. The memory array is then read with the memory array configured in a second operating condition that the repair logic can achieve using the test data from the test at the first operating condition. As a result, repairs can be achieved even though the repair logic is incapable of operating at the same condition as the memory array. A method, test unit and integrated circuit implementing the testing are presented.

Abstract: A data replacement processing method is disclosed. In the present invention, buffering and decoding are not interrupted when a data block to be replaced is found. The data block to be replaced can be a defect or a remapped block. The data block to be replaced is not processed until it is requested to be transferred. When the data block to be replaced is to be transferred, transferring is stopped and the data block to be replaced is processed. Therefore, efficiency of the optical disc drive can be promoted since interruption number of the buffering and decoding is decreased. In addition, the optical disc will not execute redundant processing for data blocks to be replaced which are not requested to be transferred.

Abstract: The present invention provides a semiconductor integrated circuit having area efficiency and repair efficiency improved by sharing a redundant memory macro among a plurality of SRAM macros. Each of the plurality of memory macros includes a memory cell array connected to word lines and bit lines and a redundant circuit that replaces a defective bit line of the memory cell array to a normal bit line and a redundant bit line and outputs defect information to a redundant signal line. The redundant memory macro includes a redundant memory cell array connected to redundant word lines and the redundant bit line, and a first word line connection circuit that connects a word line corresponding to a memory macro to be repaired and disconnects a word line corresponding to a normal memory macro from the redundant word line.

Abstract: Method for determining a repair solution for a memory module in a test system, memory areas of the memory module being successively tested in order to obtain, for each memory area, a defect datum which specifies whether the respective memory area is defective, wherein defect addresses, the address values of which specify the defective memory areas of the memory module, are generated from addresses of the memory areas and the associated defect data, the defect addresses being stored in the test system, the repair solution being determined from the stored defect addresses.

Abstract: There is provided a test apparatus for testing a memory under test that includes therein a plurality of blocks and one or more repairing columns.

Abstract: A method and system for repairing a memory. A test and repair wrapper is operable to be integrated with input/output (I/O) circuitry of a memory instance to form a wrapper I/O (WIO) block that is operable to receive test and repair information from a built-in self-test and repair (BISTR) processor. Logic circuitry associated with the WIO block is operable generate a current error signal that is used locally by the BISTR processor for providing a repair enable control signal in order to repair a faulty memory portion using a redundant memory portion without having to access a post-processing environment for repair signature generation.

Abstract: Various methods and apparatuses are described in which a repair data container may store a concatenated repair signature for multiple memories having one or more redundant components associated with each memory. A processor contains redundancy allocation logic to execute one or more repair algorithms to generate a repair signature for each memory. The repair data container may store actual repair signatures for each memory having one or more defective memory cells detected during fault testing and dummy repair signatures for each memory with no defective memory cells. The processor may contain logic configured to compress an amount of bits making up the concatenated repair signature, to decompress the amount of bits making up the concatenated repair signature, and to compose the concatenated repair signature for all of the memories sharing the repair data container. The repair data container may have an amount of fuses to store the actual repair signatures for an adjustable subset of the multiple memories.

Abstract: In one embodiment, a computer-implemented system for compiling a fuse assembly for a memory is disclosed. The claimed embodiment comprises: means for defining a memory group including at least one memory instance, each memory instance being characterized by its memory configuration data; means for determining number of fuses required for each memory instance based on its configuration data; means for automatically passing fuse information relating to the number of fuses to a fuse compiler; and means for generating, based on the fuse information, a fuse box assembly having a plurality of fuses organized into a set of fuse segments, each segment corresponding to a particular memory instance of the memory group.