Abstract: An integrated circuit is provided with domino logic including a speculative node and a checker node. Precharged circuitry precharges both the speculative node and the checker node. Logic circuitry provides a discharge path for the speculative node and the checker node in dependence upon input signal values. Evaluation control circuitry first couples the speculative node to the logic circuitry and then subsequently couples the checker node to the logic circuitry such that these can be discharged if the input signals to the logic circuitry have appropriate values. Error detection circuitry detects an error when the speculative node and the checker node are not one of both discharged or both undischarged.

Abstract: A test mode control circuit of a semiconductor memory device includes an input unit configured to input test mode data for at least one of a plurality of test modes, and a test mode controlling unit configured to enable/disable a test mode according to the number of inputs of the test mode data.

Abstract: A method and apparatus for data analysis according to various aspects of the present invention is configured to automatically select one or more outlier identification algorithms for identifying statistical outliers in test data for components.

Abstract: To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

Abstract: Circuits, methods, and apparatus that isolate an input register from spurious transitions on a DQS signal. One example receives an enable signal from a core. A logic circuit, which may be referred to as a one-half period circuit, shortens enable pulses at their front end by one-half a period. The shortened enable signal is passed to a storage element such as a register. Active pulses of the shortened enable signal clear the register, which provides a control signal closing a switch, such as an AND gate. The switch passes the DQS signal to the input register when closed and isolates the input register from the DQS signal when open. The shortened enable signal prevents the switch from opening early and passing spurious transitions on the DQS signal, for example during back-to-back non-consecutive read cycles.

Abstract: Described embodiments provide for end-of-life (EOL) checking for NAND flash devices. An exemplary implementation of a computing environment comprises at least one NAND data storage device operative to store one or more data elements. In the illustrative implementation, the EOL data processing and storage management paradigm allows for the storage of data according using a selected EOL enforcement algorithm that can utilize current and/or historical correction levels. The NAND data storage EOL checking module can be operable to cooperate with one or more NAND data store components to execute one or more selected EOL operations to protect stored data.

Abstract: In an embodiment, the effect of signal phase difference on a memory system is tested for various operating states. The various operating states may be represented as respective sample points on a plane defined by a range of values for a difference in signal phases and a range of values for another operating state parameter. In various embodiments, sample points for a round of crosstalk testing may include two sample points which are offset from the same reference point on the plane along different respective axes, where the axes are oblique to one another.

Abstract: A system and method for semiconductor identification chip read out is presented. A user uses a stand-alone handheld device to extract product data, which includes manufacturing process attributes, from a semiconductor device. The semiconductor device couples to the hand held device through a subset of pins, such as a power pin, a ground pin, a clock in pin, and a data out pin. When coupled, the handheld device provides a clock signal to the semiconductor device. In turn, on chip logic within the semiconductor device detects the clock signal and gathers internal product data. Once gathered, the on chip logic provides the product data to the hand held device through the data out pin for a user to view. As a result, the user may track semiconductor devices more efficiently.

Abstract: A system and method for defect analysis of multi-level memory cell devices and embedded multi-level memory in system-on-chip integrated circuits are disclosed wherein a defect data set is input into the system. When a defect data set is received, an automated test engineering system running a memory test program analyzes the defect data set to generate one or more fail bit locations and one or more fail states of the memory. The multi-level memory defect analysis system and method then classify failed bits or patterns comprising a vertical fail pattern, whereby after being classified, each memory cell failure vertical fail pattern has three data attributes comprising fail type, a number of fail bits/states, and a sequence of the fail states. The vertical fail pattern may comprise a single fail state or multi-state fail. The multi-state fail may be a continuous-states fail, discontinuous-states fail, or all-state fail.

Abstract: Disclosed are methods and circuits for performing recovery associated with programming of non-volatile memory (NVM) array cells. According to embodiments, there are provided methods and circuits for programming NVM cells, including: (1) erasing NVM array cells; (2) loading an SRAM with user data; (3) if programming is successful, then flipping bits in the SRAM; and (4) if programming is not successful, reading data back from the array to the SRAM.

Abstract: A technique for detecting an imminent read failure in a memory array includes determining whether a memory array, which does not exhibit an uncorrectable error correcting code (ECC) read during an initial array integrity check at a normal read verify voltage level, exhibits an uncorrectable ECC read during a subsequent array integrity check at a margin read verify voltage level. The technique also includes providing an indication of an imminent read failure for the memory array when the memory array exhibits an uncorrectable ECC read during the subsequent array integrity check. In this case, the margin read verify voltage level is different from the normal read verify voltage level.

Abstract: The present invention pertains to semiconductor memory devices, and particularly to a system and method for adaptively setting the operating voltages for SRAM for both Vtrip and SNM to reduce power while maintaining functionality and performance, based on modeling and characterizing a test structure. One embodiment comprises an SRAM array, a test structure that characterizes one or more parameters that are predictive of the SRAM functionality and outputs data of the parameters, a test controller that reads the parameters and identifies an operating voltage that satisfies predetermined yield criteria, and a voltage controller to set an operating voltage for the SRAM array based on the identified operating voltage. One method sets an operating voltage for an SRAM by reading test structure data of the parameters, analyzing the data to identify an operating voltage that satisfies predetermined yield criteria, and setting the operating voltage for the SRAM based on the identified operating voltage.

Abstract: A memory using techniques to extract the data content of its storage elements, when the distribution of stored states is degraded, is presented. If the distribution of stored states has degraded, secondary evaluations of the memory cells are performed using modified read conditions. Based upon the results of these supplemental evaluations, the memory device determines the read conditions at which to best decide the data stored.

Abstract: A method for implementing at speed bit fail mapping of an embedded memory system having ABIST (Array Built In Self Testing), comprises using a high speed multiplied clock which is a multiple of an external clock of an external tester to sequence ABIST bit fail testing of the embedded memory system. Collect store fail data during ABIST testing of the embedded memory system. Perform a predetermined number of ABIST runs before issuing a bypass order substituting the external clock for the high speed multiplied clock. Use the external clock of the tester to read bit fail data out to the external tester.

Abstract: Embodiments of the present disclosure provide methods, devices, and systems for performing a programming operation on an array of non-volatile memory cells. One method includes programming a number of cells to a number of final data states. The method includes performing, prior to completion of, e.g., finishing, the programming operation, an erase state check on a subset of the number of cells, which were to be programmed to an erased state.

Abstract: In a particular embodiment, a data storage device includes a memory array including a target memory cell and one or more other memory cells. The data storage device also includes a controller coupled to the memory array. The controller is configured to directly compute a reliability measure for at least one bit stored in the target memory cell of the memory array based on a voltage value associated with the target memory cell and based on one or more corresponding voltage values associated with each of the one or more other memory cells of the memory array.

Abstract: Systems, controllers and methods are disclosed, such as an initialization system including a controller that receives patterns of read data coupled from a memory device through a plurality of read data lanes. The controller is operable to detect any lane-to-lane skew in the patterns of read data received through the read data lanes. The controller then adjusts the manner in which the read data received through the read data lanes during normal operation are divided into frames. The controller can also couple patterns of command/address bits to the memory device through a plurality of command/address lanes. The memory device can send the received command/address bits back to the controller through the read data lanes. The controller is operable to detect any lane-to-lane skew in the patterns of command/address bits received through the read data lanes to adjust the manner in which the command/address bits coupled through the command/address lanes during normal operation are divided into frames.

Abstract: Disclosed are methods, systems and devices, such as a device including a data location, a quantizing circuit coupled to the data location, and a test module coupled to the quantizing circuit. The quantizing circuit may include an analog-to-digital converter, a switch coupled to the memory element and a feedback signal path coupled to the output of the analog-to-digital converter and to the switch.

Abstract: A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

Abstract: Embodiments of the present disclosure provide methods, devices, and systems for performing a programming operation on an array of non-volatile memory cells. One method includes programming a number of cells to a number of final data states. The method includes performing, prior to completion of, e.g., finishing, the programming operation, an erase state check on a subset of the number of cells, which were to be programmed to an erased state.

Abstract: A semiconductor memory device is capable of outputting calibration codes to an external circuit. The semiconductor memory device includes a data output control unit for controlling an output of data, a calibration code output control unit for transmitting calibration codes to determine a termination resistance value, a test mode signal generating unit for generating a test mode signal which is enabled in the test mode for outputting the calibration codes, and a test mode control unit for selectively outputting the data or the calibration codes in response to the test mode signal.

Abstract: A test apparatus is for testing a memory device including a memory cell. The test apparatus includes a storage and a controller. The storage stores a first value. The controller executes, at a given timing, determining a second value which is a threshold limit value to read data of the memory cell correctly on the basis of an output of the memory cell, calculating a difference between the first value and the second value, outputting a deterioration information on the basis of the difference between the first value and the second value, and updating the first value stored in the storage to the second value.

Abstract: Detecting brown-out in a system having a non-volatile memory (NVM) includes loading data in the NVM, wherein a next step in loading is performed on a location in the NVM that is logically sequential to an immediately preceding loading. A pair of adjacent locations include one with possible data and another that is empty. Determining which of the two, if at all, have experienced brownout includes using two different sense references. One has a higher standard for detecting a logic high and the other higher standard for detecting a logic low. Results from using the two different references are compared. If the results are the same for both references, then there is no brownout. If the results are different for either there has been a brownout. The location with the different results is set to an invalid state as the location that has experienced the brownout.

Abstract: In some embodiments the continuous measuring of temperature in remote memory devices operating within an electrically noisy environment is facilitated by coordinating the progressive approximation of temperature within quiescent periods of non-activity as known by a memory controller.

Abstract: Disclosed are a flash memory device and flash memory programming method that equalizes a wear-level. The flash memory device includes a memory cell array, an inversion determining unit to generate a programming page through inverting or not inverting a data page based on a number of ‘1’s and ‘0’s in the data page, a programming unit to store the generated programming page in the memory cell array; and a data verifying unit to read the programming page stored in the memory cell array, to restore the data page from the programming page according to whether an error exists in the read programming page, and to output the restored data page, and thereby can equalize a wear-level of a memory cell.

Abstract: A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

Abstract: Provided are a method and system for testing a semiconductor memory device using an internal clock signal of the semiconductor memory device as a data strobe signal. The internally-generated data strobe signal may be delayed to synchronize with test data. Because a test device need not supply the data strobe signal, the number of semiconductor memory modules that can be simultaneously tested can be increased, and an average test time for a unit memory module can be decreased.

Abstract: A method and system for monitoring and compensating the performance of an operational circuit is provided. The system includes one or more integrated circuit chips and a controller. Each integrated circuit chip includes one or more operational circuits, each operational circuit having at least one controllable circuit parameter. Each integrated circuit chip also includes a process monitor module at least partially constructed thereon. The controller is coupled to each process monitor module and to each operational circuit. The controller includes logic for evaluating the performance of an operational circuit based on data obtained from process monitor module and operational circuit related data stored in a memory. Based on the evaluation, the controller determines whether any deviations from desired or optimal performance of the circuit exist. If deviations exist, the controller generates a control signal to initiate adjustments to the operational circuit to compensate for the deviations.

Abstract: A method for testing an integrated circuit implemented in an electronic system. The method includes placing an integrated circuit (or portion thereof) that is implemented in an operational system (e.g., in a computer system) in an offline status. An electrical parameter of the integrated system (e.g., a voltage, clock frequency, etc.) is set, and a built-in self-test (BIST) is conducted. Any failures that occur during the BIST are recorded. Testing is then repeated for each of a plurality of predetermined values of the electrical parameter, recording any failures that occur. Once testing is complete a failure rate/range is determined for each of the predetermined values.

Abstract: Configuration information including number of normal cell areas and number of spare cell areas arranged in a memory macro and a size of each cell area is extracted from circuit design information, and electrical test results of the normal cell areas and the spare cell areas arranged in the memory macro are collected. Arrangement information corresponding to a collection order of the electrical test results is converted to a two-dimensional coordinate value for two-dimensionally displaying the arrangement information corresponding to a collection order of the electrical test results in a unit of cell area in association with a physical layout of a memory cell in the memory macro based on the configuration information. The collected electrical test results are displayed based on the two-dimensional coordinate value so that the normal cell areas and the spare cell areas can be distinguished.

Abstract: An integrated circuit chip comprising a number of semiconductor components exhibiting parasitic components through which a short-circuit between the circuit supply voltage and ground could occur, wherein said semiconductor components are distributed in elementary blocks, each elementary block being independently connected, for its power supply, to the supply or ground lines of the main supply network of the integrated circuit by a current-limiting device capable of stopping a short-circuit starting in the considered block, and each block being sized so that logic errors occurring in this block are correctable by error-correction means.

Abstract: According to embodiments of the present invention, an integrated circuit such as a processor includes a counter to count an actual number of unreliable storage locations in the processor cache, at least one register to store an acceptable number of unreliable storage locations for the cache, a detector to measure a thermal environment of the processor, and circuitry to raise an operating voltage of the processor if the actual number of unreliable storage locations exceeds the acceptable number of unreliable storage locations, and if the thermal environment is acceptable.

Abstract: A tester for testing a semiconductor device is disclosed. The tester for testing the semiconductor device employs a data selector for converting a logical test pattern data transmitted from a pattern generator into a physical test pattern data and an expected data based on the logical test pattern data, thereby generating various timings based on a time delay instead of using a plurality of clocks to improve a test efficiency and reduce a manufacturing cost.

Abstract: A semiconductor memory device, having a test mode and a normal mode, includes a frequency multiplier and a test command sequence generator. The frequency multiplier receives a test clock signal in the test mode and generates multiple internal test clock signals, each of which has a frequency equal to a frequency of an operation clock signal in the normal mode. The test clock signal has a frequency lower than the frequency of the operation clock signal. The test command sequence generator generates at least one command signal in response to the internal test clock signals in the test mode. The at least one command signal corresponds to at least one operation timing parameter of the semiconductor memory device that is to be measured. The frequency multiplier may include a Phase Locked Loop (PLL) or a Delay Locked Loop (DLL).

Abstract: A semiconductor device includes a memory module provided with a plurality of memory cells, a verify determination unit that performs quality determination of read data that have been read from the memory cells on the basis of the read data and an expected value prepared in advance, and a power source monitoring circuit that detects fluctuations equal to or greater than a predetermined variation rate in a power source voltage supplied to the memory module and outputs a power source abnormality detection signal. Furthermore, the verify determination unit invalidates a result of the quality determination when the power source abnormality detection signal indicates an abnormal state of the power source voltage.

Abstract: A method for generating a set of at least one row-specific reading threshold for reading at least portions of pages of data within an erase sector of a flash memory device, the method comprising predetermining at least one initial reading threshold; performing the following steps for at least one current logical page: generating bit error characterizing information regarding at least one corresponding bit error within at least one cell representing at least a logical portion of at least one successfully reconstructed previous logical page; and computing at least one row-specific reading threshold based on said bit error characterizing information and on a previous threshold initially comprising said initial threshold and subsequently comprising a row-specific reading threshold computed for a successfully reconstructed previous logical page; and reading at least a portion of said current logical page using said at least one row-specific reading threshold.

Abstract: A semiconductor storage device which includes a memory array including a plurality of memory cells for storing data by using a difference in a threshold voltage and at least one reference cell for storing data indicative of a state of a corresponding memory cell by using a difference in a threshold voltage, a control circuit for determining a read voltage based on data stored by a reference cell corresponding to a memory cell adjacent to a memory cell to be read, a read unit for executing reading from a memory cell to be read by using a determined read voltage, and a write unit for executing writing, when executing writing to a memory cell to be written to bring the memory cell into a written state, data indicating that the memory cell is in the written state to a reference cell corresponding to the memory cell.

Abstract: A semiconductor memory device comprises a plate voltage generating circuit that generates a plate voltage supplied to a memory cell array and a plate voltage supply terminal that supplies a plate voltage from the outside. A first switching circuit is provided to switch the supply of the plate voltage between the supply from the plate voltage generating circuit and the supply from the outside through the plate voltage supply terminal.

Abstract: A test circuit arrangement for testing latch units is provided which includes a) a voltage generator configured to adjust a voltage potential difference between a first ground line and a second ground line of the latch units and/or to adjust a voltage potential difference between a first supply voltage line and a second supply voltage line of the latch units; b) combiner configured to combine logical outputs of the latch units; and c) determiner configured to determine the voltage potential difference between the first ground line and the second ground line and/or the voltage potential difference between the first supply voltage line and the second supply voltage line in a state when all of the latch units have identical logical outputs.

Abstract: Example embodiments relate to a memory test system having a semiconductor memory device, a coupling circuit and a tester. The semiconductor memory device may include a plurality of first output nodes and a plurality of second output nodes. The first output nodes may be connected to respective first on-die termination circuits that may not be tested, and the second output nodes may be connected to second on-die termination circuits that may be tested. The semiconductor memory device may be configured to generate test signals of the second on-die termination circuits and to provide the test signals to the second output nodes. The coupling circuit may be configured to connect the first output nodes and the second output nodes to communication channels, respectively. The tester may be configured to test a logic state of the test signals of the communication channels.

Abstract: A flash memory device is disclosed that comprises memory cells, a sense node connected to a selected bit line, a sense circuit configured to selectively provide a first voltage to a common node in accordance with a voltage level of the sense node, a first register connected to the sense node and the common node and configured to store data in accordance with a voltage level of the common node, a second register configured to store data in accordance with the voltage level of the sense node, a switch configured to provide a second voltage to the second register, and a discharge circuit configured to selectively discharge the sense node in accordance with the data stored in the second register.

Abstract: A circuit includes a comparator circuit configured such that its output toggles from a first digital logical level to a second digital logical level when its first and second inputs transition between a first state wherein the first input has an applied voltage greater than an applied voltage at the second input and a second state wherein the first input has an applied voltage less than an applied voltage at the second input. A plurality of cells each have at least one series-connected pair of field effect transistors interconnected at an output node intermediate the field effect transistors. Decoding logic is configured to select a given one of the cells for measurement, and selectively interconnect the output node of the given one of the cells to the first input of the comparator circuit.

Abstract: An automatic multi-cable continuity tester. The multi-conductor electrical continuity tester includes a controller that is configured to generate a first serial stream of input test signals. The first serial stream of input test signals includes a plurality of signals equal in number to a plurality of conductors in a cable. A data input module is configured to convert the first serial stream of input test signals into a first parallel stream of test signals. A data output module is configured to receive and convert the first parallel stream of test signals to a first serial stream of output test signals.

Abstract: A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

Abstract: An apparatus comprising a comparator circuit, a reference circuit, a plurality of elements and a logic circuit. The comparator circuit may be configured to generate a difference signal in response to (i) a reference signal and (ii) a test signal. The reference circuit configured to generate the reference signal in response to a first control signal. The plurality of elements may each be configured to generate an intermediate test signal. One of the intermediate test signals may be presented as the test signal by activating one of the test elements, in response to a second control signal. The logic circuit may be configured to generate (i) the first control signal and (ii) the second control signal, each in response to the difference signal.

Abstract: On the fly tuning of parameters used in an interface between a memory (e.g. high speed memory such as DRAM) and a processor requesting access to the memory. In an operational mode, a memory controller couples the processor to the memory. The memory controller can also inhibit the operational mode to initiate a training mode. In the training mode, the memory controller tunes one or more parameters (voltage references, timing skews, etc.) used in an upcoming operational mode. The access to the memory may be from an isochronous process running on a graphics processor. The memory controller determines whether the isochronous process may be inhibited before entering the training mode. If memory buffers for the isochronous process are such that the training mode will not impact the isochronous process, then the memory controller can enter the training mode to tune the interface parameters without negatively impacting the process.

Abstract: There is implemented a semiconductor memory tester capable of efficiently conducting a test on a fast memory by programming according to parameters of a device without being attended by complex program handling. The semiconductor memory tester for determining pass/fail on a memory device under test is characterized in comprising a measurement division for comparing an output from the memory device under test with an expected value at timing on the basis of a clock outputted by the memory device under test.

Abstract: In a high-speed serial link, an eye finder diagnostic circuit has improved performance by being on-chip with the existing capture latch(es) of a receive equalizer. The eye finder circuit employs an additional capture latch with its input tied to the same input node as the existing capture latch(es) of a receive equalizer. The additional capture latch has a clock input and reference voltage input. The clock input is adjusted through a phase interpolator (or variable delay line) while the reference voltage input is adjusted by a voltage generator. A digital post processing circuit then compares the output of the additional capture latch with the output of the other existing capture latch(es), in order to determine the receive eye opening. The horizontal eye opening is measured by changing the phase of the additional capture latch through the phase interpolator, while the vertical eye opening is measured by changing the reference voltage of the voltage generator of the additional capture latch.

Abstract: A semiconductor memory device for performing a reliability test includes a write driving block for generating a predetermined test voltage in a test mode and delivering a data inputted from an external circuit into the local I/O line pair during a data access operation in a normal mode, a local I/O line pair coupled to the write driving block for receiving the predetermined test voltage in the test mode, and a cell array having a plurality of unit cells and a plurality of bit line pairs respectively having first and second bit lines and coupled to at least one unit cell for receiving the predetermined test voltage from each local I/O line pair to thereby check a result of the reliability test in the test mode.

Abstract: The present invention pertains to semiconductor memory devices, and particularly to a system and method for adaptively setting the operating voltages for SRAM for both Vtrip and SNM to reduce power while maintaining functionality and performance, based on modeling and characterizing a test structure. One embodiment comprises an SRAM array, a test structure that characterizes one or more parameters that are predictive of the SRAM functionality and outputs data of the parameters, a test controller that reads the parameters and identifies an operating voltage that satisfies predetermined yield criteria, and a voltage controller to set an operating voltage for the SRAM array based on the identified operating voltage. One method sets an operating voltage for an SRAM by reading test structure data of the parameters, analyzing the data to identify an operating voltage that satisfies predetermined yield criteria, and setting the operating voltage for the SRAM based on the identified operating voltage.