Abstract: A controller includes a processing circuit that writes each of a plurality of data fragments each including a part of data to be written in one memory chip of a plurality of memory chips each having an error correction function, and reads the data fragments corresponding to the data to be read from the memory chips, a first encoder that encodes the data to be written with an erasure correction code such that each of the data fragments includes a parity, and a first decoder that performs erasure correction by use of a part of the data fragments corresponding to the data to be read according to a completion status or success or failure of error correction on a corresponding part of the data fragments in each of the memory chips, the completion status or the success or failure of the error correction being acquired via a signal line.

Abstract: A memory test system and a memory test method are provided. The memory test system includes a control unit, a data reading channel, a data writing channel and a test channel. The control unit generates and outputs a first read and a first write command. The data reading channel and the data writing channel coupled to the memory unit, and the control unit respectively reads data from the memory unit at a first time and writes the data back to the memory unit at a second time according to the first read command and the first write command. The test channel receives the data from the data reading channel through an input end and outputs the data back to the data writing channel through an output end after a time delay. The time delay is substantially equal to a time interval between the first time and the second time.

Abstract: Methods and data processing systems for using a buffer to replace failed memory cells in a memory component are provided. Embodiments include determining that a first copy of data stored within a plurality of memory cells of a memory component contains one or more errors; in response to determining that the first copy contains one or more errors, determining whether a backup cache within the buffer contains a second copy of the data; and in response to determining that the backup cache contains the second copy of the data, transferring the second copy from the backup cache to a location within an error data queue (EDQ) within the buffer and updating the buffer controller to use the location within the EDQ instead of the plurality of memory cells within the memory component.

Abstract: According to one embodiment, a memory system includes a memory cell array, first error correction part, second error correction part, and third error correction part. The memory cell array includes a first storage area in which 1-bit data is stored in one memory cell, and second storage area in which data of a plurality of bits is stored in one memory cell. When data is written to the first storage area, the first error correction part generates first parity data in the row direction on the basis of the data described above. The second error correction part corrects an error of the data described above on the basis of the first parity data read from the memory cell array. The third error correction part generates second parity data in the column direction on the basis of data of a plurality of pages.

Abstract: An occurrence of at least one storage error is determined in an addressable portion of a primary storage storing a block of data. In response to determining the occurrence of the at least one storage error, it is determined whether the block of data is available in cache storage. In response to determining the block of data is cached, the cached block of data is used rather than the block of data from the addressable portion of the primary storage.

Abstract: In accordance with the present disclosure, a dynamic random access memory (DRAM) component is described. The DRAM component may comprise an integrated circuit, with the integrated circuit including an array of volatile memory cells. A first volatile memory cells of the array of volatile memory cells may be defective. The integrated circuit may also include non-volatile memory, and the non-volatile memory may contain a reference to the first volatile memory cell.

Abstract: A SAS method to control host controller failure that includes, in response to receipt of a failure signal indicating that a host controller has failed, sending a wakeup signal to a host cache module of the failed host controller to cause the host cache module to determine whether there is trapped data in the host cache module that has not been transferred to a storage system. In response to receipt of a cache state signal indicating that there is trapped data in the host cache module that has not been transferred to the storage system, initiating transfer of the trapped data from the host cache module of the failed host controller to a host cache module of another host controller.

Abstract: Discarded memory devices unfit for an original purpose can be reclaimed for reuse for another purpose. The discarded memory devices are tested and evaluated to determine the level of performance degradation therein. A set of an alternate usage and an information encoding scheme to facilitate a reuse of the tested memory device is identified based on the evaluation of the discarded memory device. A memory chip controller may be configured to facilitate usage of reclaimed memory devices by enabling a plurality of encoding schemes therein. Further, a memory device can be configured to facilitate diagnosis of the functionality, and to facilitate usage as a discarded memory unit. Waste due to discarded memory devices can be thereby reduced.

Abstract: When a double failure occurs in a storage device storing a mutual conversion table such as a track management information table in thin provisioning, the storage address of the track within the storage subsystem cannot be specified and user data is lost. In order to solve the problem, the present invention provides a storage subsystem capable of recovering data by referring to a track address stored in an accessible track management information table or a user data section, renewing the damaged track management information table to restore the corresponding relationship between track management information tables, and enabling the user data to be accessed again.

Abstract: Mechanisms are provided for efficient storage of meta-bits within a system memory. The mechanisms combine an L/G bit and an SUE bit to form meta-bits. The mechanisms then determine the local/global state of a cache line on the first cycle of data. The mechanisms forward the data to the requesting cache, and the requesting cache may reissue the request globally based on the local/global state of the cache line. The mechanisms then determine the special uncorrectable error state of the cache line on the second or subsequent cycle of data. The mechanisms perform error processing regardless of whether the request was reissued globally.

Abstract: A memory module includes a plurality of memory chips stacked on top of one another, each of the plurality of memory chips including a memory cell unit that is divided into a plurality of blocks, and an address scrambling circuit that processes an input address signal and that selects a block to be operated.

Abstract: A method that includes identifying a failure indication for a first data storage device that is a member of a first RAID group within a storage array. The method further can include, via a processor external to the storage array, identifying a virtual drive that is defined to include at least one logical storage volume defined in a second RAID group. The virtual drive can be provisioned to serve as a virtual hot spare within the first RAID group to replace the first data storage device.

Abstract: A data memory is organized as a logical matrix having multiple virtual data words. Along with the physical representation of the data as being associated with physical memory cells, other virtual data words and their virtual check bits are formed that intersect (logically) with the real data word in a multi-dimensional array. Each of these virtual words can possess errors that can be quickly corrected using independent EDAC methodology. The validity of the virtual word can be used to verify the validity of a single bit in the real word thus correcting multiple bit errors.

Abstract: An information storage device includes a semiconductor memory divided into storage regions and a management unit. The management unit manages the storage regions so that any storage region which caused read or write errors a predetermined threshold number of times, which may be two or more, is made unavailable for storing data.

Abstract: A memory device comprises a memory cell array and a bad page map. The memory cell array comprises a plurality of memory cells arranged in pages and columns, wherein the memory cell array is divided into a first memory block and a second memory block each corresponding to an array of the memory cells. The bad page map stores bad page location information indicating whether each of the pages of the first memory block is good or bad. A fail page address of the first memory block is replaced by a pass page address of the second memory block according to the bad page location information.

Abstract: A method including creating a commit-in-progress context from a copy of a data object in a redirect-on-write file system; and begin storing the commit-in-progress context in a persistent storage device. The method further includes, while storing the commit-in-progress context in the persistent storage device: receiving a notification of a pending modification to the first data object, creating an update-in-progress context from a copy of the commit-in-progress context, and begin applying the modification to the update-in-progress context. The method further includes detecting that a connectivity error has occurred between the commit-in-progress context and the storage device, and in response, identifying whether the commit-in-progress context is successfully stored in the storage device.

Abstract: A post-write read operation, using a combined verification of multiple pages of data, is presented. In a simultaneous verification of multiple pages in a block, the controller evaluates a combined function of the multiple pages, instead of evaluating each page separately. In one exemplary embodiment, the combined function is formed by XORing the pages together. Such a combined verification of multiple pages based on the read data can significantly reduce the controller involvement, lowering the required bus and ECC bandwidth for a post-write read and hence allow efficient post-write reads when the number of dies is large.

Abstract: Each cache line of a cache has a lockout state that indicates whether an error has been detected for data accessed at the cache line, and also has a data validity state, which indicates whether the data stored at the cache line is representative of the current value of data stored at a corresponding memory location. The lockout state of a cache line is indicated by a set of one or more lockout bits associate with the cache line. In response to a cache invalidation event, the state of the lockout indicators for each cache line can be maintained so that locked out cache lines remain in the locked out state even after a cache invalidation. This allows memory error management software executing at the data processing device to robustly manage the state of the lockout indicators.

Abstract: A data processing device includes a cache having a plurality of cache lines. Each cache line has a lockout state that indicates whether an error has been detected for data accessed at the cache line. The lockout state of a cache line is indicated by a set of one or more lockout bits associate with the cache line. When a cache line is in a locked-out state, the cache line is not used by the cache. Accordingly, a locked-out cache line is not employed by the cache to satisfy a cache accesses, and is not used to store data retrieved from memory in response to a cache miss. In response to determining the detected error likely did not result from a hardware failure or other persistent condition, memory error management software can reset the lockout state of the cache line.

Abstract: A storage control device includes an interface for a host computer and a memory device and a control unit that creates a read command that causes the memory device to reproduce data at an access target address, and creates a first diagnosis command that causes the memory device to conduct a diagnostic reproduction at an address subsequent to the access target address, according to the request received from the host computer, sequentially issues the read command and the first diagnosis command to cause the memory devices to execute sequential accessing and conducts a diagnosis to confirm the normality of the memory device.

Abstract: Systems and method for configuring a page-based memory device without pre-existing dedicated metadata. The method includes reading metadata from a metadata portion of a page of the memory device, and determining a characteristic of the page based on the metadata. The memory device may be configured as a cache. The metadata may include address tags, such that determining the characteristic may include determining if desired information is present in the page, and reading the desired information if it is determined to be present in the page. The metadata may also include error-correcting code (ECC), such that determining the characteristic may include detecting errors present in data stored in the page. The metadata may further include directory information, memory coherency information, or dirty/valid/lock information.

Abstract: A controller of a memory device which accesses a memory of the memory device having a data storage area and a data correction area. The controller includes a mode selection unit When the memory works with a first operation voltage, the mode selection unit selects a first mode of the controller, and the controller writes input data into the data storage area to serve as storage data and reads the storage data from the data storage area. When the memory works with a second operation voltage, the mode selection unit selects a second mode of the controller, and the controller performs a correction function to encode the input data to generate encoded input data, writes the encoded input data into the data storage area and the data correction area to respectively serve as the storage data and correction data, and reads and decodes the storage data and the correction data.

Abstract: A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract: Methods and structure for diagnosing errors in the initialization of DDR memory “on board” a storage controller or a storage expander are presented herein. The features and aspects discussed herein allow for the debugging of the DDR memory initialization. A memory diagnostic system is operable on a storage controller and includes an initialization module in communication with a firmware module of the storage controller. The memory diagnostic system is adapted to initialize a Double Date Rate (DDR) memory of the storage controller. The memory diagnostic system also includes an application programming interface adapted to retrieve initialization information from the initialization module and transfer the initialization information to a debug system via a direct communication link between the application programming interface and the debug system to diagnose the initialization of the DDR memory and to debug the initialization module based on the initialization information.

Abstract: Embodiments of the invention relate to erasure correcting codes for storage arrays. An aspect of the invention includes receiving a read stripe from a plurality of storage devices. The read stripe includes a block of pages arranged in rows and columns, with each column corresponding to one of the storage devices. The pages include data pages and parity pages, with the number of parity pages at least one more than the number of rows and not a multiple of the number of rows. The method further includes reconstructing at least one erased page in response to determining that the read stripe includes the at least one erased page and that the number of erased pages is less than or equal to the number of parity pages. The reconstructing is responsive to a multiple erasure correcting code and to the block of pages. The reconstructing results in a recovered read stripe.

Abstract: This invention is an exception priority arbitration unit which prioritizes memory access permission fault and data exception signals according to a fixed hierarchy if received during a same cycle. A CPU memory access permission fault is prioritized above a DMA memory access permission fault of a direct memory access permission fault. Any memory access permission fault is prioritized above a data exception signal. A non-correctable data exception signal is prioritized above a correctable data exception signal.

Abstract: A data processing apparatus includes a memory which receives and outputs data with a predetermined data width, an operation circuit which outputs a read command or a write command to access the memory, and an access control circuit which replaces a part of first read data read from the memory with a partial data, and outputs partially replaced data as write data to the memory when receiving the write command and the partial data with a data width smaller than the predetermined data width associated with the write command, from the operation circuit. The access control circuit replaces a part of second read data which has been acquired in response to the read command outputted before, instead of the first read data, with the partial data, and outputs replaced partially data as the write data if the write command has been outputted in connection with a read command outputted before the write command.

Abstract: Methods, devices, and systems for determining location of error detection data are described. One method for operating a memory unit having a bad group of memory cells includes determining a location of where to store error detection data for data to be stored across a plurality of memory units, including the memory unit having the bad group, based at least partially on a location of the bad group and storing the error detection data in the determined location.

Abstract: Embodiments of the invention are directed to systems and methods for reducing an amount of backup power needed to provide power fail safe preservation of a data redundancy scheme such as RAID that is implemented in solid state storage devices where new write data is accumulated and written along with parity data. Because new write data cannot be guaranteed to arrive in integer multiples of stripe size, a full stripe's worth of new write data may not exist when power is lost. Various embodiments use truncated RAID stripes (fewer storage elements per stripe) to save cached write data when a power failure occurs. This approach allows the system to maintain RAID parity data protection in a power fail cache flush case even though a full stripe of write data may not exist, thereby reducing the amount of backup power needed to maintain parity protection in the event of power loss.

Abstract: An apparatus, system, and method are disclosed to increase data integrity in a redundant storage system. The receive module receives a read request to read data from an ECC chunk spanning N storage elements of an array of N+P storage elements. The N storage elements each store a portion of the ECC chunk and the P storage elements store parity data. The data read module reads data from each of X number of storage elements of the N+P storage elements where (N+P)>X?N. The ECC correction module corrects the read data of the ECC chunk using Error Correcting Code (“ECC”) in response to the ECC chunk comprising a number of bit errors below a correctable bit error threshold. The substitution module may correct the read data with substitute data from a substitute storage element.

Abstract: A data processing system 2 is provided with multiple processor cores 4, 6, 8, 10 each incorporating a data cache memory 12, 14, 16, 18. A snoop control unit 20 manages coherency between the data values stored within the data caches 12, 14, 16, 18. The snoop control unit 20 incorporates a TAG memory 22. If an error is detected within an entry of the TAG memory 22, then a hit operation is forced to the corresponding storage location one or more of the data caches 12, 14, 16, 18.

Abstract: A semiconductor package includes a memory controller chip, a plurality of first memory chips configured to store normal data, a second memory chip configured to store error information for correcting or detecting error of the normal data, and an interface unit configured to interface the memory controller chip, the plurality of first memory chips, and the second memory chip.

Abstract: According to one embodiment, a semiconductor memory device includes a memory including an array of memory cells. A buffer comprises latches to hold data from the memory cells. The latches constitute latch groups. The latches of each latch group are connected to corresponding one common line through a transfer circuit. An error corrector is connected to the common lines and detects an error bit in received data. A data transfer controller causes the buffer to read out data from memory cells to be verified, repeats reading out of all data in the latches in one latch group to corresponding one of common lines as to-be-verified data segment for different latch groups, and transfers the to-be-verified data segments to the error corrector. A verify controller causes the error corrector to determine whether an error bit is included in to-be-verified data includes the to-be-verified data segments.

Abstract: A memory validation manager reserves a block of time for exclusive accesses to a memory bank having lines of memory for which validation codes provide a degree of error detection and correction for each memory line. The memory validation manager reads, processes, and corrects at least some of the contents of each memory line based on indications of validity encountered for each memory line. New data is written in response to a validation code. Likewise, a valid field for each line can be updated and a new validation code written for a memory when the valid field indicates that a validation code has not yet been written for a memory line. The memory validation manager processes data read from a first memory line while either reading or writing to another memory line to minimize the latency of the process of scrubbing memory lines.

Abstract: A memory storage device, a memory controller, and a log likelihood ratio (LLR) generation method are provided. A read data corresponding to a first storage state is obtained from memory cells of a flash memory chip in the memory storage device by using bit data read voltages. An error checking and correcting procedure is performed on the read data to obtain a second storage state corresponding to the read data when the read data is written. An amount of storage error is obtained in storage states satisfying a statistic number, and a storage error means that data is in the second storage state when being written and is in the first storage state when being read. A logarithmic operation is executed according to the statistic number, an amount of the storage states, and the amount of storage error to generate a first LLR of the read data.

Abstract: When write data D is high rewritten data, a PC 10 controls a DRAM 24 to store the write data D (steps S100 and S110). When the write data D is not the high rewritten data, the PC 10 outputs an RRAM write request signal and the write data D to an SSD (step S100 and S120). A memory controller of the SSD input the RRAM write request signal controls the RRAM and an SRAM to store the write data D in the RRAM or the SRAM. This treatment enables data stored in the DRAM to be rewritten frequently. Therefore, the decrease of number of times of refresh operation of the DRAM and the decrease of power consumption are accomplished.

Abstract: This disclosure concerns a memory including: a first memory region including memory groups including a plurality of memory cells, addresses being respectively allocated for the memory groups, the memory groups respectively being units of data erase operations; a second memory region temporarily storing therein data read from the first memory region or temporarily storing therein data to be written to the first memory region; a read counter storing therein a data read count for each memory group; an error-correcting circuit calculating an error bit count of the read data; and a controller performing a refresh operation, in which the read data stored in one of the memory groups is temporarily stored in the second memory region and is written back the read data to the same memory group, when the error bit count exceeds a first threshold or when the data read count exceeds a second threshold.

Abstract: A method and apparatus for correlating the identities of hardware devices, such as processors or memory controllers, between a local operating system and a global management entity is described. In an embodiment a fault message including a local identifier of a faulting device is received from an operating system. A global identifier of the faulting device is determined that is different from the local identifier. An appropriate replacement device is then selected based on the global identifier of the faulting device, and the selected replacement device is mapped to the faulting device.

Abstract: According to one embodiment, a failure analyzing device includes a classifying unit that classifies a failure type in a fail bit map corresponding to each layer, a storage unit that stores a rule to combine failed cells of different layers, and a determining unit that groups a classification result matched with the rule among classification results based on the classifying unit. The rule includes a base point failure, an association failure becoming a combination object of the base point failure, a combination condition defining a relationship between the base point failure and the association failure, and a combination failure name. The determining unit extracts the base point failure from the classification result of one layer, extracts the association failure matched with the combination condition from the classification results of the other layers, groups the extracted base point failure and association failure, and provides the combination failure name.

Abstract: Systems and methods are disclosed for monitoring the time it takes to perform a write operation, and based on the time it takes, a determination is made whether to retire a block that is a recipient of the write operation. The time duration of the write operation for a page or a combination of pages may indicate whether any block or blocks containing the page or combination of pages is experiencing a physical failure. That is, if the time duration of the write operation for a particular page exceeds time threshold, this may indicate that this page requires a larger number of program cycles than other pages. The longer programming cycle can be an indication of cell leakage or a failing block.

Abstract: When detected number of errors data Nerror exceeds the upper limit number of errors Nmax, an error correction circuit of a memory controller stores twice as long data length as stored data length for execution Sdata as the data length for execution Sdata in a correction information memory unit, and code length Scref longer than the data length for execution Sdata and detectable more errors than the upper limit number of errors as the code length for execution Scode in the correction information memory unit 32 (step S100 and S110). The error correction circuit encodes input data using BCH code having the stored code length for execution Scode, stored encoded data in a semiconductor memory device, is input data stored in the semiconductor memory device, performs error correction for input data using BCH code, and decode error corrected data.

Abstract: An exemplary method of creating a target storage layout table referenced for partitioning a storage space of a storage device includes following steps: identifying defective storage areas in the storage space of the storage device, and accordingly generating an identification result; and creating the target storage layout table according to the identification result.

Abstract: A system and a method for handling a system failure are disclosed. The method is adapted for an information handling system having a basic input and output system and a micro-controller. The method includes the following steps: sending, via the micro-controller, a signal; checking, via the micro-controller, whether an acknowledgement is received from the basic input and output system responsive to the signal; and scanning, via the micro-controller, a type of a system failure in response to the acknowledgement being not received.

Abstract: A test apparatus includes: a test executing section executing a test on the device under test; a fail memory storing a test result outputted by the test executing section, the fail memory implementing an interleave technology for interleaving accesses to a plurality of banks; a buffer memory storing the test result transferred from the fail memory and transfers at least part of the test result to a cache memory, the buffer memory being either a memory not implementing the interleave technology or a memory implementing the interleave technology but having a smaller number of banks than the fail memory; the cache memory storing the at least part of the test result transferred from the buffer memory, the cache memory allowing random access in shorter time than the buffer memory does; and an analysis section analyzing the test result stored in the cache memory.

Abstract: A method performed by an I/O unit connected to another I/O unit in a network device. The method includes receiving a packet; segmenting the packet into a group of data blocks; storing the group of data blocks in a data memory; generating data protection information for a data block of the group of data blocks; creating a control block for the data block; storing, in a control memory, a group of data items for the control block, the group of data items including information associated with a location, of the data block, within the data memory and the data protection information for the data block; performing a data integrity check on the data block, using the data protection information, to determine whether the data block contains a data error; and outputting the data block when the data integrity check indicates that the data block does not contain a data error.

Abstract: A hybrid storage device that includes a hard-disk drive (HDD) and a flash memory is described. When control logic in the hybrid storage device receives a request from an external device to write a block of data to a logical address in a first portion of an address space that maps to the HDD, the control logic writes the block of data to the HDD. However, if there is a change in environmental state information of the hybrid storage device during the write operation, the control logic writes at least a portion of the block of data to a logical address for the block of data in a second portion of the address space which maps to the flash memory. Note that the address space may be common to the external device and the hybrid storage device.

Abstract: A system for calibrating timing for write operations between a memory controller and a memory device is described. During operation, the system identifies a time gap required to transition from writing data from the memory controller to the memory device to reading data from the memory device to the memory controller. The system then transmits a test data pattern to the memory device within the time gap. The system subsequently uses the received test data pattern to calibrate a phase relationship between a received timing signal and data transmitted from the memory controller to the memory device during write operations.

Abstract: A memory system includes a controlling unit that configured to control data transfer between the first and the second memory. The controlling unit executes copy processing for, after reading out data stored in a first page of the second memory to the first memory, writing the data in a second page of the second memory, determines, when executing the copy processing, whether the error correction processing for the data read out from the first page is successful, stores, when the error correction processing is successful, corrected data in the first memory and writes the corrected data in the second page, and reads out, when the error correction processing is unsuccessful, the data from the first page to the first memory and writes the data not subjected to the error correction processing in the second page.

Abstract: Systems and methods to manage memory refreshes at a memory controller are disclosed. A method includes determining, at a memory controller device, that a number of transmission errors between a memory controller port and a memory redrive device exceeds an error threshold. The method may include initiating a first link retraining process between the memory controller port and the memory redrive device. The method may further include placing one or more dynamic random access memory modules associated with the memory redrive device in a self-refresh mode. The method may also include removing the one or more dynamic random access memory modules from the self-refresh mode after the link retraining process has completed. The method may further include enabling overlapping refreshes of the one or more dynamic random access memory modules.

Abstract: Systems and methods are disclosed for remapping codewords for storage in a non-volatile memory, such as flash memory. In some embodiments, a controller that manages the non-volatile memory may prepare codeword using a suitable error correcting code. The controller can store a first portion of the codeword in a lower page of the non-volatile memory may store a second portion of the codeword in an upper page of the non-volatile memory. Because upper and lower pages may have different resiliencies to error-causing phenomena, remapping codewords in this manner may even out the bit error rates of the codewords (which would otherwise have a more bimodal distribution).