Abstract: An activatable nanoprobe is provided having a core component and an active agent associated with the core component via a bond configured to be cleaved upon exposure to an endogenous compound.
Type:
Grant
Filed:
June 11, 2012
Date of Patent:
July 29, 2014
Assignee:
University of Central Florida Research Foundation, Inc.
Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the sec
Type:
Grant
Filed:
July 24, 2008
Date of Patent:
August 14, 2012
Assignee:
Electronics and Telecommunications Research Institute
Inventors:
Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
Abstract: Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
Type:
Grant
Filed:
August 20, 2008
Date of Patent:
September 20, 2011
Assignee:
Electronics and Telecommunications Research Institute
Inventors:
Tae Youb Kim, Nae Man Park, Han Young Yu, Moon Gyu Jang, Jong Heon Yang