Biological Switching Patents (Class 977/710)

Cross-Reference Art Collections

Nucleic acid switching (Class 977/711)
  • Patent number: 8791285
    Abstract: An activatable nanoprobe is provided having a core component and an active agent associated with the core component via a bond configured to be cleaved upon exposure to an endogenous compound.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: July 29, 2014
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: Swadeshmukul Santra, James Turkson
  • Patent number: 8241939
    Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the sec
    Type: Grant
    Filed: July 24, 2008
    Date of Patent: August 14, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
  • Patent number: 8022444
    Abstract: Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: September 20, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Tae Youb Kim, Nae Man Park, Han Young Yu, Moon Gyu Jang, Jong Heon Yang