Abstract: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device.

Abstract: A method includes causing a common-resonator mode resonating with a transition between |2>i and |3>i that are coupled to each other by a transition having a homogenous broadening ?Ehomo greater than an energy difference between |0>i and |1>i, an energy difference between |2>i and |3>i being greater than ?Ehomo, transferring states of m quantum bits represented by |0>k and |1>k to |4>k and |5>k, respectively, when a quantum-bit-gate operation using the common-resonator mode is executed between the quantum bits represented by m physical systems k, |E(|u>k)?E(|v>k)|>?Ehomo, u, v?{2, 3, 4, 5}, u?v, executing adiabatic passage between the physical systems k, using light that resonates with a transition between |3>k and |4>k and a transition between |3>k and |5>k, executing the quantum-bit-gate operation between the quantum bits, and transferring, to |0>k and |1>k, the states represented by |4>k and |5>k, respectively.

Abstract: Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.

Abstract: Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

Abstract: A quantum bit computation method includes operating a two-quantum-bit gate on quantum bits of a first physical system and a second physical system, second energy states of second physical systems except for the first physical system and the second physical system do not change, three energy states being represented by |0>, |1> and |3>, the two energy states being represented by |2> and |4>, energies of |2> and |4> being higher than energies of |0>, |1> and |3>, a transition frequency between |3> and |2> being equal to the resonance frequency, |0> and |1> representing quantum bits, flipping quantum bits of first physical systems after operating the two-quantum-bit gate, executing no operations by a time equal to a time for operating the two-quantum-bit gate, after flipping the quantum bits, and again flipping the quantum bits of the first physical systems after executing no operations.

Abstract: Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer. In the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer.

Abstract: A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer.

Abstract: In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side surfaces of the connecting magnetic layer. A reader reads information stored in the information storing magnetic layer.

Abstract: A quantum bit computation method includes operating a two-quantum-bit gate on quantum bits of a first physical system and a second physical system, second energy states of second physical systems except for the first physical system and the second physical system do not change, three energy states being represented by |0>, |1> and |3>, the two energy states being represented by |2> and |4>, energies of |2> and |4> being higher than energies of |0>, |1> and |3>, a transition frequency between |3> and |2> being equal to the resonance frequency, |0> and |1> representing quantum bits, flipping quantum bits of first physical systems after operating the two-quantum-bit gate, executing no operations by a time equal to a time for operating the two-quantum-bit gate, after flipping the quantum bits, and again flipping the quantum bits of the first physical systems after executing no operations.

Abstract: Embodiments of the present invention are directed toward the field of spintronics, and in particular, systems and devices capable of performing spin coherent quantum logic operations. The inventive spin valve comprises two ferromagnetic electrode layers, and a non-magnetic conducting layer positioned therebetween. An external magnetic field B0 is applied in the Z direction, such that the two electrode layers are each magnetized in a direction substantially parallel to the external magnetic field. Rather than attempting to change the magnetization of one of the ferromagnetic layers, as is the case in prior art technologies, it is the direction of the electron spin that is manipulated in the present embodiments while the electron is traveling through the middle, nonmagnetic layer. One of the ferromagnetic electrodes may be the tip of a scanning tunneling microscope (STM).

Abstract: In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path coupled to the MTJ structure and a write path coupled to the MTJ structure. The write path is separate from the read path.

Abstract: A particular magnetic tunnel junction (MTJ) cell includes a side wall defining a first magnetic domain adapted to store a first digital value. The MTJ cell also includes a bottom wall coupled to the side wall and defining a second magnetic domain adapted to store a second digital value.

Abstract: A quantum computing device and method employs qubit arrays of entangled states using negative refractive index lenses. A qubit includes a pair of neutral atoms separated by or disposed on opposite sides of a negative refractive index lens. The neutral atoms and negative refractive index lens are selectively energized and/or activated to cause entanglement of states of the atoms. The quantum computing device enjoys a novel architecture that is workable and scalable in terms of size and wavelength.

Abstract: With a simple circuit configuration which does not conduct high frequency signal processing, a quantum computing device, a quantum bit readout processing unit of the quantum computing device, and a quantum bit readout processing method are provided. By controlling a quantum bit structure, which is formed with a counter electrode coupling with a quantum box electrode through a first tunnel barrier, with a gate voltage, a Cooper-pair extracted from the quantum box electrode after computation is accumulated in a trap electrode coupling with the quantum bit structure by sandwiching a second tunnel barrier. By coupling the trap electrode and an island electrode of a readout single electron transistor through a static capacitance, a change of electric charge in the trap electrode is read out as a direct current value of the single electron transistor.

Abstract: Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

Abstract: This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell; one so-called “free” magnetic storage layer, the magnetization direction of which is variable; one insulating layer sandwiched between the reference layer and the storage layer. The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

Abstract: An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.

Abstract: An information storage device includes a writing magnetic layer including a magnetic domain wall. An information storing magnetic layer is connected to the writing magnetic layer, and includes at least one magnetic domain wall. The information storage device also includes a reader for reading data recorded in the information storing magnetic layer. The connection layer includes a first portion with a first width adjacent to the writing magnetic layer and a second portion with a second width adjacent to the at least one information storing magnetic layer. The first width is less than the second width.

Abstract: The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.

Abstract: A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed therefrom.

Abstract: A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.

Abstract: An apparatus, system, and method for fast all-optical switching is presented. In one embodiment, the apparatus includes a first light transmitting medium. The apparatus may also include a second light transmitting medium coupled to the first light transmitting medium and disposed to form an interface region between the first light transmitting medium and the second light transmitting medium. Additionally, the apparatus may include a plurality of Lambda atoms disposed in the interface region, the Lambda atoms adapted to cause Electromagnetically-Induced Transparency (EIT) in the interface region in response to an incident photon.

Abstract: A system, method, and device for producing, transmitting and displaying images in holographic form of up to three dimensions. Information representative of a three dimensional image can be converted into three-dimensional positional data. The three-dimensional position data can be converted into an electromagnetic field which can be received by nanomachines configured to adjust position in accordance with the electromagnetic field and including mirrored endpoints for reflecting light. The nanomachines can adjust position in three dimensions so that the mirrored endpoints reflect light in a manner that reproduces the three dimensional image in holographic form.

Abstract: Apparatus and methods enable active compensation for unwanted discrepancies in the superconducting elements of quantum processor. A qubit may include a primary compound Josephson junction (CJJ) structure, which may include at least a first secondary CJJ structure to enable compensation for Josephson junction asymmetry in the primary CJJ structure. A qubit may include a series LC-circuit coupled in parallel with a first CJJ structure to provide a tunable capacitance. A qubit control system may include means for tuning inductance of a qubit loop, for instance a tunable coupler inductively coupled to the qubit loop and controlled by a programming interface, or a CJJ structure coupled in series with the qubit loop and controlled by a programming interface.

Abstract: This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In further aspects the device is scaled up. The invention also concerns methods of reading out from the devices, initializing them, using them to perform logic operations and making them.

Abstract: A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.

Abstract: A quantum dot (22) is formed on a GaAs substrate (20). In the quantum dot (22), a single electron exists. A cap layer (26) is formed on a surrounding area of the quantum dot (22), and a barrier layer (28) is formed thereon. A quantum dot (30) for detection is formed on the barrier layer (28). Then, a cap layer (34) covering the quantum dot (30) and the like is formed.

Abstract: Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.

Abstract: A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a first write element formed at one end portion of the first magnetic line, and a first read element formed at the other end portion of the first magnetic line.

Abstract: A cavity free, broadband approach for engineering photon emitter interactions via sub-wavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot (QD) is optically excited in close proximity to a silver nanowire (NW), emission from the QD couples directly to guided surface plasmons in the NW, causing the wire's ends to light up. Nonclassical photon correlations between the emission from the QD and the ends of the NW demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that the efficient coupling is accompanied by more than 2.5-fold enhancement of the QD spontaneous emission, in a good agreement with theoretical predictions.

Abstract: Provided are a magnetic layer, a method of forming the magnetic layer, an information storage device, and a method of manufacturing the information storage device. The information storage device may include a magnetic track having a plurality of magnetic domains, a current supply element connected to the magnetic layer and a reading/writing element. The magnetic track includes a hard magnetic track, and the hard magnetic track has a magnetization easy-axis extending in a direction parallel to a width of the hard magnetic track.

Abstract: A data storage device includes a magnetic layer having a plurality of magnetic domains, a write head provided at an end portion of the magnetic layer, a read head to read data written to the magnetic layer, and a current controller connected to the write head and the read head. A method of operating the data storage device includes reading data of an end portion of the magnetic layer using a read head provided at the end portion of the magnetic layer in which a write head is provided at the other end portion thereof, moving a magnetic domain wall of the magnetic layer by a distance corresponding to the length of one magnetic domain toward the end portion, and writing the read data to the other end portion of the magnetic layer using the write head and a current controller provided between the write head and the read head.

Abstract: There is provided a quantum computing circuit comprising first and second superconductive magnetic flux quantum bit elements (101, 102) and a coupling superconductive magnetic flux quantum bit element (103). The first and second superconductive magnetic flux quantum bit elements form superconductive loops including a plurality of Josephson junctions, are biased at a half-quantum magnetic flux, and have mutually different characteristic frequencies. The coupling superconductive magnetic flux quantum bit clement performs variable control between the elements (101, 102) in a parametric way by applying a microwave magnetic field pulse equal to the frequency difference between the elements (101, 102).

Abstract: A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.

Abstract: A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.

Abstract: The present invention contemplates a variety of methods and techniques for fabricating a carbon nanotube (CNT) signal modulator for reducing, eliminating, or enhancing the resonance interaction between photonic elements, and a photonic transmission device that may incorporate the signal modulator. The CNT signal modulator comprises a gate CNT on a substrate in a position for receiving an input photonic signal and an input modulation signal; and transmitting an output photonic signal that is reduced, eliminated, or enhanced through the selection of the input modulation signal; and an input modulation signal sender for sending the input modulation signal to the gate CNT and creating the modulated output photonic signal from the gate CNT. The photonic transmission device can contain a plurality of CNTs, each having functional antenna forms that are capable of a resonance interaction of photons between adjacent CNTs when formed as an array on a substrate.

Abstract: Ionisation of one of a pair of dopant atoms in a substrate creates a double well potential, and a charge qubit is realised by the location of one or more electrons or holes within this potential. The dopant atoms may comprise phosphorous atoms, located in a silicon substrate. A solid state quantum computer may be formed using a plurality of pairs of dopant atoms, corresponding gate electrodes, and read-out devices comprising single electron transistors.

Abstract: A serial magnetic mass storage device and associated data storage method is provided based on magnetic nanowires that support single magnetic domains separated by domain walls. Each data-storing nanowire has a plurality of crossing nanowires along its length, forming cross junctions that constitute domain wall pinning sites. Data is fed through each data-storing nanowire by moving the magnetic domains under the action of a field that alternates between alignment and anti-alignment with the crossing nanowires. The data is encoded in the chirality of the domain walls, with up and down chirality transverse domain walls being used to encode 0's and 1's. Data is clocked into each nanowire with suitable nucleation generators capable of nucleating domains with domain walls of pre-defined chirality. Data is clocked out of each nanowire with suitable magnetic field sensors that sense the chirality.

Abstract: Provided are a magnetic track using magnetic domain wall movement and an information storage device including the same. A magnetic track may comprise a zigzag shaped storage track including a plurality of first magnetic layers in parallel with each other, and stacked separate from each other, and a plurality of second magnetic layers for connecting the plurality of first magnetic layers. The information storage device may include the magnetic track having a plurality of magnetic domains, current applying device connected to the magnetic track, and a read/write device on a middle portion of the magnetic track.

Abstract: A serial magnetic mass storage device and associated data storage method of the kind in which data is encoded in single magnetic domains in nanowires. In the invention, the nanowires are provided with a large number of notches along their length to form domain wall pinning sites. Moreover, the notches are addressed in groups (A, B, C) by heating electrodes. By alternately heating the notches hosting head-to-head and tail-to-tail domain walls in synchrony with alignment and anti-alignment of an operating field (H) along the nanowire the magnetic domains are moved along the nanowire by alternate movement of the head-to-head and tail-to-tail domain walls in caterpillar or worm-like motion in which the domains are incrementally lengthened and shortened by one inter-notch distance as they move along the nanowires under the joint coordinated action of the heating and alternating operating field.

Abstract: A semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not require an additional notch since the magnetic wire includes a magnetic domain wall, the moving distance of which is controlled by a pulse field or a pulse current.

Abstract: A method of positioning a sample at a desired location relative to a magnetic sensor, for measurement of magnetic characteristics of the sample. A sample mounting substrate is provided, and an amphifunctional molecule is bound to the sample mounting substrate at the desired location. The amphifunctional molecule has a portion for binding to the sample mounting substrate, and a portion for capturing the sample. The sample is then provided for capture by the amphifunctional molecule.

Abstract: A structure comprising (i) a first information device, (ii) a second information device, (iii) a first coupling element and (iv) a second coupling element is provided. The first information device has at least a first lobe and a second lobe that are in electrical communication with each other. The second information device and has at least a first lobe and a second lobe that are in electrical communication with each other. The first coupling element inductively couples the first lobe of the first information device to the first lobe of the second information device. The second coupling element inductively couples the first lobe of the first information device to the second lobe of the second information device.

Abstract: The present invention relates to the formation of electron spin EPR pairs and manipulation of such entangled electrons. The invention comprises a static quantum dot located part way along a quantum wire with means for adjusting the confining potential of the quantum dot. The quantum wire may for instance be formed by gate electrode (4, 6) with the quantum dot formed by a further gate electrode (8). The invention also comprises means for generating a electrostatic wave propagating along the wire, such as a surface acoustic wave transducer (10). In use a pair of electrons may be loaded into the static quantum dot and allowed to relax to a singlet ground state, in which the electrons are spin entangled. The propagating electrostatic wave acts as a series of quantum dots moving along the quantum wire.

Abstract: A system and method for the controlled generation, manipulation, and conversion of individual photons in and for a quantum computing environment or a quantum communication environment are provided. Systems and methods for doubling a single photon in a first propagation mode into two new photons in one or two new propagation modes, combining two photons in one or two propagation modes into a single photon of a single propagation mode, and implementing a pi phase shift on a two-photon state but not on the one-photon state in a fully controlled, consistent, and repeatable fashion are also provided, as well as a source of individual photons having clearly defined and fully controllable properties. Embodiments of the above allow for generation and conversion operations that are up to 100% efficient. The generation, conversion, combination, and phase shifting operations are preferably carried out inside a non-linear ?3 material of a predetermined length.

Abstract: A semiconductor device to which magnetic domain wall movement is applied is provided. The semiconductor device includes a magnetic substance film in which magnetic domain walls are moved, and the magnetic substance film has a damping constant of 0.015 to 0.1.

Abstract: Low power magnetoelectronic device structures and methods therefore are provided. The magnetoelectronic device structure (100, 150, 450, 451) comprises a programming line (104, 154, 156, 454, 456), a magnetoelectronic device (102, 152, 452) magnetically coupled to the programming line (104, 154, 156, 454, 456), and an enhanced permeability dielectric (EPD) material (106, 108, 110, 158, 160, 162, 458, 460, 462) disposed adjacent the magnetoelectronic device. The EPD material (106, 108, 110, 158, 160, 162, 458, 460, 462) comprises multiple composite layers (408) of magnetic nano-particles (406) embedded in a dielectric matrix (409). The composition of the composite layers is chosen to provide a predetermined permeability profile. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating the magnetoelectronic device (102, 152, 452) and depositing the programming line (104, 154, 156, 454, 456).

Abstract: A method for creating a logic state for teleporting quantum information using a single photon is described. The method includes receiving a photon with an initial polarization and causing a first semiconductor crystal to have a first spin orientation. The photon interacts with the first semiconductor crystal for producing a resulting polarization dependent upon the first spin orientation. Causing the photon to interact with the first semiconductor crystal generates a maximally entangled state.

Abstract: A method for use with a magnetic racetrack device includes placing domain walls having a first structure and domain walls having a second, different structure along the racetrack at stable positions corresponding to different regions within the device. The domain walls having the first structure and the domain walls having the second structure occupy alternating positions along the racetrack. A current pulse is applied to the racetrack, so that each of the domain walls moves to an adjacent region. This results in a transformation of the domain walls having the first structure into domain walls having the second structure, and vice versa. The first structure may be a vortex structure and the second structure may be a transverse structure.

Abstract: Universal quantum gates that include single qubit and two-qubit gates are provided.