Abstract: A new high efficiency, multijunction photovoltaic solar cell for use with a concentrating lens. This cell comprises an elemental single crystal substrate without an internal light sensitive junction, upon which are two or more successive homogenous layers of semiconductor material, each layer containing within it a light sensitive p/n junction of a similar polarity, each layer having essentially the same lattice constant as the single crystal substrate, each layer having a shorting junction contact with the layer immediately above and below it, each successive layer adsorbing light energy at a shorter wavelength, and each layer being of sufficient thickness and appropriate composition to develop essentially the same current as the other layers. The outer surfaces of the top layer and the substrate are provided with electrical contacts for distribution of the electric current.

Abstract: Deposit control additives for internal combustion engines are provided which maintain cleanliness of intake systems withcut contributing to combustion chamber deposits. The additives are hydrocarbylpoly(oxyalkylene) aminocarbamates comprising a hydrocarbyl-terminated poly(oxyalkylene) chain of 2-5 carbon oxyalkylene units bonded through an oxycarbonyl group to a nitrogen atom of a diamine.

Abstract: Cadmium sulfide photovoltaic cells of improved efficiency comprising transparent metal conducting electrode layer, first cadmium semi-conductor layer, short-barrier layer, second cadmium sulfide semi-conductor layer, barrier layer and collecting metal electrode layer.

Abstract: Fuel compositions for internal combustion engines are provided containing deposit control additives which maintain cleanliness of intake systems without contributing to combustion chamber deposits. The additives are hydrocarbylpoly(oxyalkylene) aminocarbamates comprising a hydrocarbyl-terminated poly(oxyalkylene) moiety composed of 2-5 carbon oxyalkylene units and one or more 9-30 carbon oxyalkylene groups. Certain additives also find use as dispersants in lubricating oils.

Abstract: A cadmium boracite crystal electronic device, having at least one silver containing electrode, which is useful as a symmetric current controlling device for DC, DC pulse and AC circuits, an asymmetric current controlling device for DC and DC pulse circuits, a current rectifier for low frequency, AC, and as a temperature sensor.

Abstract: The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.

Abstract: An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

Abstract: A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.

Abstract: A mixture of ceric ions (Ce.sup.+4) and cerous ions (Ce.sup.+3) in an aqueous electrolyte solution forms a Schottky barrier at the interface between an active region of silicon and the electrolyte solution. The barrier height obtained for hydrogenated amorphous silicon using the Ce.sup.+4 /Ce.sup.+3 redox couple is about 1.7 eV.

Abstract: Components can be held down on printed circuit boards by applying compositions comprising a water soluble polymeric compound or mixture of compounds which can be dissolved in water to give a greater than 45% solids content with a viscosity range of about 8 to about 12 poises at about 25.degree. C., a water soluble mono- or polyhydric alcohol, water, a wetting agent, and a water soluble organic acid having a keto oxygen group within 4 carbon atoms of the carboxylic acid group, to the printed circuit board prior to insertion of the components to keep them in place during soldering operations. The mixture can be completely removed after soldering by a water rinse.

Abstract: A method of forming an adherent pinhole free aluminum film on a pyroelectric and/or piezoelectric substrate comprising heating said substrate to from about 150.degree. C. to about 350.degree. C. at a pressure of from about 1.times.10.sup.-4 Torr to about 1.times.10.sup.-6 Torr for a sufficient time to desorb any gas molecules on the surface on said substrate, cooling said substrate with dry oxygen to about 125.degree. C. at a pressure of about 1.times.10.sup.-4 Torr and thereafter, terminating the flow of oxygen and further reducing the pressure to about 1.times.10.sup.-5 Torr or lower and evaporating an aluminum film on said substrate.

Abstract: A Schottky barrier amorphous silicon solar cell incorporates a tellurium layer as the Schottky barrier.

Abstract: A cured epoxy resin composition containing high concentrations of liquid polysulfide polymers has improved resistance to thermal cycling and degradation by moisture.

Abstract: A method for leaching mercury soluble metals from mercury insoluble substrates such as microelectronic devices without damaging the substrate or contaminating the environment with mercury. A mercury vapor jet is formed by passing mercury vapors through an orifice at residual gas pressure of about 10.sup.-2 Torr and a temperature of from about 65.degree. C. to about 150.degree. C. The mercury vapor jet strikes the substrate at an angle which is substantially perpendicular to the center of the substrate and leaches the mercury soluble metal therefrom.

Abstract: A laser beam apparatus and method for analyzing, inter alia, the current versus voltage curve at the point of illumination on a solar cell and the open circuit voltage of a solar cell. The apparatus incorporates a lock-in amplifier, and a laser beam light chopper which permits the measurement of the AC current of the solar cell at an applied DC voltage at the position on the solar cell where the cell is illuminated and a feedback scheme which permits the direct scanning measurements of the open circuit voltage. The accuracy of the measurement is a function of the intensity and wavelength of the laser light with respect to the intensity and wavelength distribution of sunlight and the percentage the dark current is at the open circuit voltage to the short circuit current of the solar cell.

Abstract: Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Abstract: An amorphous silicon capable of the formation of a semiconductor junction. The amorphous silicon can be fabricated by a glow discharge in a gas atmosphere including hydrogen and a deposition gas. The deposition gas has therein the elements silicon and a halogen selected from the group consisting of chlorine, bromine and iodine.

Abstract: A new low cost high efficiency gallium arsenide homojunction solar cell incorporating a passivating surface layer of indium gallium phosphide. The thickness of the indium gallium phosphide layer is selected so that it is transmissive to photons having wavelengths shorter than its bandgap energy.

Abstract: A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

Abstract: A method of removing the effects of electrical shorts and shunts created during the fabrication process and improving the performance of a solar cell with a thick film cermet electrode opposite to the incident surface by applying a reverse bias voltage of sufficient magnitude to burn out the electrical shorts and shunts but less than the break down voltage of the solar cell.