Abstract: An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Abstract: A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Abstract: An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

Abstract: A process for storing energy from solar radiation whereby solar radiation is converted into electrical current which is supplied to an electrochemical cell in combination with water and carbon dioxide gas to produce formic acid as an electrochemical storage medium. The formic acid can be easily decomposed by catalysts known in the art into carbon dioxide and hydrogen gas which can be burned as fuel or used as a starting material in numerous commercial applications.

Abstract: A method of reducing the absorption losses in an optical fiber by irradiating the optical fiber with ultraviolet light at a reduced pressure and elevated temperature.

Abstract: Apparatus for pulling a ribbon shaped crystal from a melt of the same downwardly through a shaping guide having a "V" shaped longitudinal trough for containing the melt. The inner wall of the trough is a die set having a longitudinal slit at the apex of the "V".

Abstract: Components can be held down on a printed circuit board without lead clinching by applying an extrudable, non-flowing, heat resistant completely diluent-solvent soluble composition over and around the components to keep them in place during soldering operations. After soldering, the hold down compound is removed by a solvent rinse. The hold down compound comprises a carboxylic acid, a cellulose compound, a solid hydrocarbon resin, a thickening agent, and a non-aqueous diluent-solvent.

Abstract: A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate is a second layer of amorphous silicon prepared by a glow discharge in silane. On the second layer opposite the first layer is a metallic film forming a surface barrier junction therebetween, i.e. a Schottky barrier. The first layer is doped so as to make an ohmic contact with the substrate. Preferably the doping concentration of the first layer is graded so the dopant concentration is maximum at the interface of the first layer and the substrate. In a second embodiment of the Schottky barrier semiconductor device an intermediate layer is between and contiguous to both the first layer and the substrate. The intermediate layer facilitates in making ohmic contact between the amorphous silicon and the substrate.

Abstract: A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

Abstract: A process for pretreating polyvinyl chloride plastics to form adherent non-grainy conformal metal coatings by electroless deposition comprising immersing the polyvinyl chloride plastic in a solution comprising at least about 10 grams of alkali metal hydroxide dissolved in a solution consisting of about 5% to about 30% by volume of a water-soluble mono-, di-, or polyhydric alcohol and about 70% to about 95% by volume of water. The immersion time is variable from about 5 minutes in ultrasonically agitated, mildly heated solutions to about 6 to about 8 hours in non-agitated, unheated solutions. After pretreatment, the polyvinyl chloride plastic is treated by standard electroless plating procedures known in the art.

Abstract: A photovoltaic device has a body which includes a thin film active region and a layer substantially transparent to solar radiation. The thickness of the transparent layer is such that a first antireflection condition is present for solar radiation at a wavelength which is relatively highly absorbed by the material of the active region. Furthermore, the combined thickness of the transparent layer and active region are such that a second antireflection condition is present for solar radiation at a wavelength which is poorly absorbed by the material of the active region. As a result of the prevailing antireflection conditions the solar radiation absorption efficiency of the photovoltaic device is increased.

Abstract: An n-type TiO.sub.2 semiconductor anode for a water photolysis cell having one or more grooves exhibits increased oxygen evolution and greater photocurrent with minimal photon reflection losses.

Abstract: In a photovoltaic semiconductor device, an electrically insulating layer is between and in contact with a body of amorphous silicon fabricated by a glow discharge in silane and a metallic film of a metal capable of forming a surface barrier junction with the amorphous silicon body. The insulating layer is of such a relatively thin thickness that charge carriers are capable of tunneling through the insulating layer. The insulating layer has been found to increase the open circuit voltage of the photovoltaic device without adversely affecting the short circuit current density of the device.

Abstract: A layer of amorphous silicon-carbide prepared by a glow discharge in a mixture of silane, hydrocarbon and doping gases is at the solar radiation incident surface of a photovoltaic device. The photovoltaic device includes first and second contiguous layers of amorphous silicon fabricated by a glow discharge in silane. The amorphous silicon carbide layer is contiguous to the second layer and opposite the first layer. The amorphous silicon carbide layer is substantially transparent to solar radiation and highly conductive, providing increased solar radiation collection efficiency and reduced internal resistance.

Abstract: Mechanical components such as dies and crucibles, which come in contact with a silicon melt during the formation of single crystalline shaped silicon particles, e.g. thin sheets or ribbons, are coated with silicon oxynitride deposited by chemical vapor deposition techniques.

Abstract: Mechanical components, e.g. die and/or crucible or the like structures with which single silicon crystals are grown from the melt as shaped articles in thin sheet or ribbon geometry, are advantageously comprised, for their material of construction, of a suitable thermally stable and inert foundation substrate coated or provided on at least the silicon-contacting surface(s) thereof with a thin, uniform, integral surface layer deposit of pyrolitic silicon nitride (Si.sub.3 N.sub.4) obtained by the chemical vapor deposition (i.e., "CVD") technique.

Abstract: The surface acoustic waves reflecting from the edges of a surface acoustic wave device, designed for low frequency application, are attenuated by placing an epoxy resin or a powder-epoxy resin mixture near the edge of the surface acoustic wave device.

Abstract: A metal film is deposited on both sides of a semiconductor wafer. A conductive support layer, e.g. gold, is deposited on one of the metal film layers. Using standard procedures, the semiconductor material is then etched to form a plurality of semiconductor devices on the support. A photoresist is next applied over the device side of the support. Windows are opened into the photoresist above each of the devices. A gold wire is attached near the edge of each device so that the devices are each electrically connected in parallel to all of said devices and to said support. A copper heat capacitor is now plated on each device. The gold wires and the photoresist are removed, leaving a copper heat capacitor on the semiconductor device. A copper heat can be formed on the device, with or without formation of the copper heat capacitor, but always after formation of the device per se.