Abstract: Accurate metering and dispensing of small quantities of abrasive material comprised of particles or powder, or both is accomplished by feed apparatus comprising a rotatable tubular member having a threaded interior surface for transporting the abrasive material through the tubular member in response to rotation of the member about the axis thereof. The discharge portion of the tube is particularly adapted to dispense frequent, small quantities of the material rather than less frequent larger quantities.

Abstract: A recording medium comprises a substrate coated with a light reflecting layer which in turn is coated with a light absorbing layer selected from the group consisting of Pt complexes of bis-(dithio-.alpha.-diketones) which have the formula: ##STR1## wherein R is a phenyl or substituted phenyl group. During recording, portions of the absorbing layer are ablated, vaporized or melted by an intensity-modulated, focussed light beam, thereby exposing portions of the reflective layer and recording video information as a reflective-antireflective pattern.

Abstract: A method and apparatus for welding a header to a heat sensitive cap to form an electro-optic device housing without weld flanges. A collet electrode is used to provide a radially compressive force which provides good electric and thermal contact to the wall of the heat sensitive cap and maintains the glass to metal seal under compression.

Abstract: A solution of tetramethylammonium hydroxide and a surfactant in a lower alcohol solubilizes photoresist films without attacking materials found in integrated circuit devices so that a subsequent 1,1,1-trichloroethane rinse completely removes the photoresist.

Abstract: Amorphous silicon layers deposited on a suitable substrate in a glow discharge of silane or other silicon containing compounds are sensitive optical storage media.

Abstract: A method for fabricating a Fresnel lens comprising a plastic layer contacted to a transparent substrate by evacuating a chamber formed by the lens mold and the substrate through a pumping tube; flowing a liquid plastic through the pumping tube into the chamber; and venting the pumping tube to the atmosphere so that atmospheric pressure forces the plastic to fill the entire chamber.

Abstract: This invention relates to a wave device comprising a single domain lithium niobate substrate having thereon a grating wherein the grating comprises single domain regions of lithium niobate having their plus c-axis direction substantially opposite the plus c-axis direction of the substrate.

Abstract: Components can be held down on a printed circuit board without lead clinching by applying an extrudable, non-flowing, heat resistant completely diluent-solvent soluble composition over and around the components to keep them in place during soldering operations. After soldering, the hold down compound is removed by a solvent rinse. The hold down compound comprises a carboxylic acid, a cellulose compound, a solid hydrocarbon resin, a thickening agent, and a non-aqueous diluent-solvent.

Abstract: A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

Abstract: The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer.

Abstract: Mounted on the metallic base member of a radiation emitter-detector package is a mounting block having a first projection, and a second projection spaced from the first projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is substantially perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device is of the type having a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device.

Abstract: An n-type TiO.sub.2 semiconductor anode for a water photolysis cell having one or more grooves exhibits increased oxygen evolution and greater photocurrent with minimal photon reflection losses.

Abstract: A semiconductor laser capable of fundamental lateral mode operation, includes a region of high conductivity in the form of a stripe in a semiconductor body and at a contacting surface of the body. The high conductivity region is between and contiguous to a pair of spaced regions also in the body and at the contacting surface. The pair of spaced regions are of a lower conductivity than the high conductivity region. The low and high conductivity regions are in electrical contact with a stripe contact and provide a focused current distribution from the stripe contact which is compatible with fundamental lateral mode operation of the laser.

Abstract: In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Abstract: A layer of amorphous silicon-carbide prepared by a glow discharge in a mixture of silane, hydrocarbon and doping gases is at the solar radiation incident surface of a photovoltaic device. The photovoltaic device includes first and second contiguous layers of amorphous silicon fabricated by a glow discharge in silane. The amorphous silicon carbide layer is contiguous to the second layer and opposite the first layer. The amorphous silicon carbide layer is substantially transparent to solar radiation and highly conductive, providing increased solar radiation collection efficiency and reduced internal resistance.

Abstract: A semiconductor laser having opposed end surfaces with an optical reflective means on the surface of at least one end surface has fundamental lateral mode selectivity. The laser has an optical waveguide that extends from one end surface to the other. The optical reflective means may be an electrical insulation layer on the end surface with a reflective stripe on the insulation layer and having a width in the lateral direction less than that of the spatial width of the fundamental lateral mode in the absence of the reflective stripe. Alternatively, the selectivity means can be an antireflection layer on the end surface with a stripe opening in the antireflection layer having a width in the lateral direction less than that of the spatial width of the fundamental lateral mode in the absence of the antireflection layer. The opening in the antireflection layer is formed by placing a wire close to the end surface and evaporating the antireflection material onto the end surface.

Abstract: A reflector of optical radiation is on at least one radiation emitting facet of an electroluminescent device. The reflector includes a plurality of contiguous layers of alternating composition. The layers are of silicon and a material selected from the group consisting of aluminum oxide, magnesium fluoride and silicon dioxide. Each of the layers is approximately .lambda./4n in thickness where ".lambda." is the free space wavelength of radiation emitted from the electroluminescent device, and "n" is the index of refraction of the layer. Two of the alternating contiguous layers provide a reflector which is partially reflecting, while six of the layers provide a reflector substantially reflecting to optical radiation.

Abstract: A semiconductor electroluminescent device includes a body having a pair of spaced end surfaces, at least one of which is capable of emitting light generated in the body and a recombination region in the body extending from one end surface to the other end surface. The body also includes a pair of spaced contacting surfaces which are approximately perpendicular to the end surfaces. On one of the contacting surfaces is a stripe contact which includes a plurality of spaced, parallel electrically conductive sub-stripes extending from one of the end surfaces to the other end surface with insulation between the sub-stripes. The sub-stripes may be conductive films on the surface of the body or conductive regions within the body. The width of the sub-stripes and the spacing therebetween along the end surfaces, are such that the stripe contact provides a substantially uniform current density at the recombination region of the device.

Abstract: A dynamic scattering liquid crystal cell is filled from a single fill port by first applying a film of a mixture of at least two resistivity dopants, each having different ions, to the cell walls, then filling the cell with a liquid crystal composition containing both dopants.

Abstract: Mechanical components, e.g. die and/or crucible or the like structures with which single silicon crystals are grown from the melt as shaped articles in thin sheet or ribbon geometry, are advantageously comprised, for their material of construction, of a suitable thermally stable and inert foundation substrate coated or provided on at least the silicon-contacting surface(s) thereof with a thin, uniform, integral surface layer deposit of pyrolitic silicon nitride (Si.sub.3 N.sub.4) obtained by the chemical vapor deposition (i.e., "CVD") technique.