Abstract: The surface acoustic waves reflecting from the edges of a surface acoustic wave device, designed for low frequency application, are attenuated by placing an epoxy resin or a powder-epoxy resin mixture near the edge of the surface acoustic wave device.

Abstract: A metal film is deposited on both sides of a semiconductor wafer. A conductive support layer, e.g. gold, is deposited on one of the metal film layers. Using standard procedures, the semiconductor material is then etched to form a plurality of semiconductor devices on the support. A photoresist is next applied over the device side of the support. Windows are opened into the photoresist above each of the devices. A gold wire is attached near the edge of each device so that the devices are each electrically connected in parallel to all of said devices and to said support. A copper heat capacitor is now plated on each device. The gold wires and the photoresist are removed, leaving a copper heat capacitor on the semiconductor device. A copper heat can be formed on the device, with or without formation of the copper heat capacitor, but always after formation of the device per se.

Abstract: A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

Abstract: A PIN or Schottky barrier semiconductor device having a body of amorphous silicon fabricated by a glow discharge is operated under forward bias conditions resulting in the emission of radiation from the device.

Abstract: An amorphous silicon material, fabricated by the process of a glow discharge in silane, is utilized as the body of semiconductor devices.

Abstract: A nickel cathode has a nickel oxide layer on its surfaces. A plurality of spaced apart grooves are in the nickel oxide layer and extend into the nickel. The cathode can be utilized in a water photolysis apparatus which also includes an N type photocatalytic semiconductor anode. Both the cathode and anode are in an aqueous basic electrolyte solution. The anode and cathode are electrically biased by a solar cell. The biasing potential of the solar cell raises the voltage potential of the cathode and lowers the Fermi level of the anode.

Abstract: A body of semiconductor material has opposed end surfaces, opposed side surfaces extending to the end surfaces and opposed first and second contact surfaces which are substantially perpendicular to the end and side surfaces. The body includes a substrate having on a surface thereof a mesa shaped active region which extends to the first contact surface. The active region has side surfaces which are spaced from the side surfaces of the body. Also on the substrate are passive regions which extend from the side surfaces of the active region to the first contact surface and side surfaces of the body. The active region has a P-N junction therein. The passive regions each include a plurality of contiguous passive layers having, P-N junctions therebetween. The P-N junctions of the passive regions extend from the first contact surface to the side surface of the body. Metallic electrodes are on each of the contact surfaces. The passive regions serve to restrict current flow to the active region.

Abstract: A layer of electrically insulating material is coated on a reflector. Granular semiconductor particles are uniformly dispersed in the layer of electrically insulating material. The combination forms an efficient absorber for high temperature photothermal conversion of solar energy.

Abstract: Electrically resistive organic materials, e.g. silicone rubber, thermoplastic resins, and liquid crystals, are made more electrically conductive by the addition of an effective amount of a compound of the formula: ##STR1## wherein R.sub.1 is selected from the group consisting of hydrogen, alkyl, and phenyl-substituted alkyl; R.sub.2 is alkyl with 8 - 20 carbon atoms; and Z is selected from the group consisting of phenyl and alkyl-substituted phenyl. The invention is particularly applicable to silicone rubber light valves and liquid crystals.

Abstract: Novel liquid crystal dyes of the formula ##STR1## wherein (CHOL) is a cholesteryl radical, X can be 0 or NH, R.sub.1 can be H, -OH, methyl, fluoro or chloro; R.sub.2 can be --NO.sub.2, --CN, N--(alkyl).sub.2, --OCOOR, --OCOR, alkyl or alkoxy and R.sub.3 can be H, methyl, fluoro or chloro, can be added to known liquid crystal compositions to impart color to the mixtures and improved contrast to a liquid crystal electro-optic device containing such mixtures.

Abstract: Garnet films suitable for bubble devices which are substituted with bismuth, aluminum or gallium and certain rare earth ions have improved magneto optic properties and can be formed at low temperatures on gadolinium gallium garnet substrates.

Abstract: Liquid crystal compounds of the formula ##STR1## wherein X can be alkoxy (RO-), acyloxy ##STR2## or alkylcarbonate ##STR3## wherein R is an alkyl group from 1-10 carbon atoms, have positive dielectric anisotropy and are useful in electro-optic devices which comprise a thin liquid crystal layer between two closely spaced parallel electrodes.

Abstract: A holographic recording medium comprising a conductive substrate, a photoconductive layer and an electrically alterable layer of a linear, low molecular weight hydrocarbon polymer has improved fatigue resistance. An acrylic barrier layer can be interposed between the photoconductive and electrically alterable layers.

Abstract: Recording medium comprising a film of a polymer of 1-methylvinyl methyl ketone on a support is suitable for recording information with electron beams. This recording medium has high resolution and good sensitivity.