Abstract: A method of making a floating gate memory cell which relies on control gate to floating gate conduction to charge and discharge the floating gate. The gate oxide and inter-level dielectric thicknesses are independently controlled by using a mask which can compensate for the different substrate and floating gate oxidation rates.

Abstract: A method of forming a semiconductor device is disclosed wherein the doping concentration of the side wall of a trench isolation region is increased. An opening is formed in a first masking layer so as to expose a portion of the semiconductor substrate. Then, dopants are introduced through the opening in the masking layer so as to form a heavily doped region within the semiconductor substrate. An isolation trench is then formed in the exposed portion of the semiconductor substrate. At least a portion of the side wall of the trench is located in the heavily doped region. The heavily doped region increases the threshold voltage of the side wall transistor and thereby reduces the leakage current along the side wall of the trench isolation region.

Abstract: A method for decreasing the turnoff time in a crystalline semiconductor region within a semiconductor device comprises initially providing a semiconductor region having a predetermined density of pinning centers. The semiconductor region is then irradiated so as to yield crystal damage that is equivalent to or greater than that which would be produced by irradiating with 1 MeV neutrons at a fluence greater than approximately 10.sup.13 cm.sup.-2. The region is then annealed at a temperature of approximately 350.degree. to 450.degree. C. for approximately 15 minutes to one hour so as to yield a density of stable recombination centers correlating with the pinning centers that provides a stable minority carrier lifetime within the semiconductor region.

Abstract: A method of making a floating gate memory cell wherein the capacitance between the control gate and floating gate can be independently controlled. Independent capacitance control is achieved by forming the inter-level dielectric in a step which is independent of the gate oxide growth process.

Abstract: A MOS/SOI field-effect transistor is made by applying a layer of a photoresist over the surface of a single-crystalline silicon layer which is on a substrate of an insulating material, such as sapphire. The surface of the silicon layer is along a (100) crystallographic plane. The photoresist layer is defined to provide an area of the photoresist layer over the area of the silicon layer where the transistor is to be formed with the edges of the photoresist area being along the edges of (100) crystallographic planes which are perpendicular to the surface of the silicon layer. The portion of the silicon layer around the photoresist layer is etched with an anisotropic plasma etch which etches the silicon layer along the (100) crystallographic planes which are perpendicular to the surface of the silicon layer to form an island of the silicon.

Abstract: A multi-level metallization is formed by forming a patterned first level metallization layer on the surface of an isolating layer on a substrate of semiconductor material. A thick planarizing layer, preferably of a glass, is applied over the first level metallization layer and the exposed areas of the insulating layer with the planarizing layer bearing depressions in its surface over the exposed areas of the insulating layer. A photoresist layer is formed on the planarizing layer in the depressions in its surface with the portions of the planarizing layer over the first level metallization layer being exposed. The exposed areas of the planarizing layer are isotropically etched until the surface of the planarizing layer is substantially planar with the bottom of the deepest depression in the planarizing layer. Any photoresist material is removed and the planarizing layer is isotropically etched until its surface is substantially planar with the surface of the first level metallization layer.

Abstract: A hydrogen-oxygen fuel cell is provided which includes as the fuel a mixture comprised of about 40 to 60% by volume of formaldehyde and about 60 to 40% by volume of propionaldehyde. The operation of hydrogen-oxygen fuel cells is improved with regard to the amount of electrical power produced, the length of time of operation between discharges of the hydrogen-oxygen fuel cell and the number of times the hydrogen-oxygen fuel cell can be rejuvenated before replacement of electrolyte.