Abstract: A body of semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate of one conductivity type with a pair of spaced, substantially parallel, dove-tail shaped grooves in a surface thereof. Over the surface of the substrate and the grooves are, in sequence, a first epitaxial layer of the one conductivity type, a second epitaxial layer which is the active recombination layer, a third epitaxial layer of the opposite conductivity type and a fourth epitaxial layer of the opposite conductivity type. The first and third layers are of a material forming heterojunctions with the second active layer. The second active layer has a region of uniform thickness directly over the space between the grooves. A stripe contact is provided on the fourth layer directly over the region of minimum thickness of the second active layer.

Abstract: A diffusion apparatus, particularly useful for diffusing aluminum into semiconductor wafers, comprises a quartz evaporation tube in combination with a restrictor plate which is inserted in an open end thereof. The restrictor plate preferably has substantially the same shape as, but a slightly smaller cross-section than, the evaporation tube. In practice, the relatively small gap between the restrictor plate and the evaporation tube results in a substantially negligible leak in the diffusion apparatus. As a result the apparatus effectively operates as if it were a sealed ampule while in fact it is open, i.e. not sealed.

Abstract: A method of optically testing electrical parameters of a surface of a semiconductor including carrier mobility and recombination time is disclosed which includes the step of irradiating the surface with a first beam of monochromatic light having a wavelength less than the wavelength corresponding to the band-gap energy of the semiconductor, resulting in the excitation of electrons and holes at the semiconductor surface. The surface is simultaneously irradiated with a second beam of monochromatic light having a wavelength larger than the wavelength corresponding to the band-gap energy of the semiconductor, whereby part of the second beam is reflected from the surface. The intensity of this reflected beam is measured and the magnitude thereof is a measure of the carrier mobility and recombination time at the semiconductor surface.

Abstract: An automatic photomask alignment system includes a monochromatic light source, such as a laser, a series of diffraction patterns which are located on a semiconductor substrate and keys which are located on photomasks with which the substrate is to be aligned. A light beam is directed through the key on a photomask onto the diffraction pattern to provide a pattern of light spots whose intensities at various locations are determined by the relative alignment of the mask and the diffraction grating. A feedback arrangement which employs photocells and means for moving the photomasks relative to the substrate provides the alignment of the photomasks with the substrate.

Abstract: A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.

Abstract: A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2.5 by counterdoping a P-type doped polycrystalline line with an N-type dopant.

Abstract: A semiconductor device includes a body of semiconductor material on which are formed a plurality of spaced semiconductor elements. Each of the semiconductor elements includes a plurality of contacts, some of which are separated from each other by recesses in the semiconductor body. A metal grid is on the semiconductor body and surrounds each of the semiconductor elements. At least one of the contacts of each element extends to and is connected to the grid. The grid serves to electrically connect the contacts of all the semiconductor elements to permit the electrical plating of the contacts. Those contacts of each semiconductor element which are not directly connected to the grid are electrically connected thereto through the semiconductor body and an adjacent contact which is directly connected to the grid.

Abstract: A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.

Abstract: The basewidth of a lateral, bipolar transistor is markedly reduced by first forming a layer of polycrystalline silicon over an oxide coated substrate. By utilizing a process for doping the exposed edges of the patterned polysilicon layer, a narrower basewidth dimension is achieved than heretofore possible with photolithographic techniques.

Abstract: A method of optically testing the lateral dimensions of a pattern of material disposed on a substrate comprises applying the material to both the main area of the substrate and a test area on the same substrate, and selectively removing the material from both areas on the substrate simultaneously to form respectively the pattern on the main area and a diffraction grating on the test area. The diffraction grating is exposed to a beam of light, and the intensity of two of the diffracted beams is measured to obtain a ratio signal (I.sub.2 /I.sub.1), which is then utilized to determine the lateral dimensional tolerance of the integrated circuit pattern.

Abstract: A method of making a monolithic semiconductor-on-insulator device which includes silicon islands in spaced relation on the surface of an insulating substrate includes the steps of filling the spaces between the islands with a passivating material by first depositing a layer of a semi-insulating material on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof and then depositing a layer of insulating material on the layer of semi-insulating material. The combined thicknesses of the layers of semi-insulating and insulating material is substantially the same as the thickness of the silicon islands so that the resulting device has a substantially planar surface.

Abstract: A silicon-on-sapphire structure and method for forming the same is described wherein the leakage current attributable to "back channel" leakage is minimized by forming the channel region in such a manner as to have provided therein at least two levels of dopant concentration. The heavier level of dopant concentration is positioned adjacent the silicon/sapphire interface while the lighter level of dopant concentration occupies the remainder of the channel region and is shallower than the heavier level. The classic inversion process takes place in the lightly doped section at the shallow level.

Abstract: Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250.degree. C., depositing a silicon overlayer over said aluminum layer at a temperature less than about 250.degree. C. and raising the temperature of said structure to between 900.degree. C. and 1300.degree. C. to cause the aluminum to diffuse into said monocrystalline silicon.

Abstract: An integrated injection logic (I.sup.2 L) device includes at least two gate structures. Each gate structure includes a first region of one type conductivity with an injector region and a base region of the opposite type conductivity disposed therein adjacent a surface thereof. A second region of the opposite type conductivity is disposed in each gate structure adjacent the surface of the first region between the injector and base region. The second regions are electrically-floating regions free of any contact electrode.

Abstract: A method of reducing the resistivity of a doped polycrystalline silicon film deposited on a substrate comprises the step of irradiating the film with a laser pulse having an energy density of less than about 1.5 joules per square centimeter.

Abstract: The method of forming an MNOS transistor having a stepped channel oxide region utilizes intentional undercutting of the oxide in the channel region to provide a self-aligned mask for ion implanting a region of the same conductivity type, but more heavily doped which will be centrally located beneath the thin portion of the channel region in order to increase the threshold window of the device while saving a photomask operation.

Abstract: An MNOS device is described wherein a body of semiconductor material is provided with source and drain regions and an interstitial portion, representing the channel region, therebetween. The channel region has an area, precisely aligned with the gate, that has been implanted with additional conductivity modifiers of the same conductivity type as the remaining portions of the channel region.

Abstract: The method of forming an MNOS transistor having a stepped channel oxide region utilizes intentional undercutting of the oxide in the channel region to provide a self-aligned mask for ion implanting a region of the same conductivity type, but more heavily doped which will be centrally located beneath the thin portion of the channel region in order to increase the threshold window of the device while saving a photomask operation.

Abstract: An injection laser diode is at one end of an optical fiber to direct modulated optical radiation into the fiber. At the other end of the fiber is a detector, such as a semiconductor photodetector, for the modulated radiation. Between the other end of the optical fiber and the detector is a reflecting shutter which is adapted to periodically reflect some of the radiation, at a lower frequency rate, back along the optical fiber to the injection laser. The radiation reflected back into the injection laser causes a variation in the characteristics of the laser so that the laser operates as a detector for the reflected radiation.

Abstract: A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.