Abstract: A method for producing monocrystalline semiconductor-on-insulator structures and article produced thereby, by the steps of heat treating a polished substrate of cubic zirconia to approximately 1150.degree.-1400.degree. C. for time to remove sufficient oxygen from the substrate in order to stabilize the surface; lowering the temperature to below 1075.degree. C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface, by a chemical vapor deposition process.

Abstract: An anisotropic etching processing for fabricating a solid state device which consists of the steps of providing a layer of silicon on the substrate and depositing a layer of molysilicide on the silicon layer. The molysilicide layer is then masked to define a pattern thereon. The unmasked portions of the molysilicide layer is then etched using a plasma etch gas mixture consisting essentially of CF.sub.4, C.sub.2 F.sub.6, O.sub.2 in the approximate ratio 50:5:2 in percent by volume. Etching through polysilicon is performed anisotropically using a plasma etch gas mixture consisting essentially of CCl.sub.2 F.sub.2 and C.sub.2 F.sub.6 in approximately the ratio 10:1 in percent by volume.

Abstract: A detector for magnetic bubble domain devices including an input path for receiving and propagating magnetic bubble domains, an expander device which intersects the input path and functions to expand the bubble domain in a first direction, and a replication device which intersects the expander and functions to cut the expanded bubble into a plurality of magnetic bubble domains and to expand the bubble domain in a second direction. A plurality of detector strips are disposed along the second direction functioning to detect the plurality of magnetic bubble domains.

Abstract: An electrochromic display cell including a pair of enclosure plates, at least one of which is transparent, and a counter electrode and a display electrode disposed between the enclosure plates. A layer of electrochromic material is disposed on the display electrode. A liquid electrolyte material is disposed between the counter electrode and display electrode, the electrolyte material being mildly acidic and having a pH between 2 and 5. The layer of electrochromic material is preferably selected from the group consisting of a diphthalocyanine of a rare-earth element, yttrium and scandium.

Abstract: A method of forming a superconductor-barrier-superconductor junction device by the steps of depositing a first superconductive layer on a substrate, forming a barrier layer on the first superconductive layer and depositing a second superconductive layer on the barrier layer. A layer of photoresist is then deposited over the second superconductive layer and patterned together with the second superconductive layer to form a mesa structure. A dielectric layer is deposited over the mesa structure, and the photoresist layer portion is dissolved thereby lifting off the dielectric portion overlying said second superconductive layer portion.

Abstract: A MOS time delay circuit including a MOS regulated voltage supply circuit for supplying a voltage proportional to a predetermined trigger voltage and a RC delay circuit having a first input connected to the regulated voltage supply circuit, and a second input connected to the signal input, and an output. The circuit also includes a variable trigger point inverter having an input connected to the output of the RC delay circuit, and signal output.

Abstract: A selectable field-of-view infrared lens is disclosed for projecting an image from object space onto a flat image plane, the selectable field-of-view infrared lens being corrected over the spectral region of 3.3 to 4.2 microns and having a selectable wide field-of-view comprising: an objective lens system having a plurality of lens elements formed of material optically transparent over the spectral region of 3.3 to 4.2 microns; a selectable refractive Galilean afocal telescope having a plurality of lens elements formed of material optically transparent over the spectral region of 3.3 to 4.

Abstract: A magnetic bubble domain system including a planar layer of magnetic material in which magnetic bubble domains can be propagated; and first and second bubble domain guide structure coupled to the layer and defining respective first and second bubble propagation paths for guiding the movement of bubbles in the layer in response to a cyclical change in the orientation of a reorienting magnetic field within the plane of the layer. A transfer bubble domain guide structure coupled to the layer is also provided for transferring bubble domains between the first and the second propagation paths responsive to a reverse in direction of the reorienting magnetic field. The transfer path is substantially the same as one of the directions of the crystallographic axes of the planar layer.

Abstract: A replicator for an ion-implanted magnetic bubble domain device including a single level conductor bubble cutting element disposed between first and second spaced apart bubble domain guide structures. The charged wall movement in response to the rotating in-plane field functions to stretch a bubble domain travelling along the first bubble propagation path onto the second bubble propagation path and the conductor element crossing the stretched domain functions in response to an activating signal on the conductor to cut the bubble.

Abstract: A method of fabricating an integrated circuit on a body of semiconductor material of a first conductivity type and a first dopant concentration by depositing a layer of semiconductor material of first conductivity type and a second dopant concentration on the body; etching the layer to form distinct silicon islands; depositing dopant species in predetermined ones of the silicon islands so that the major surface and exposed edges of ones of the islands becomes second conductivity type; and thermally oxidizing the exposed surface portions of the body so that oxide fills the regions between the silicon islands.

Abstract: A bi-level magnetic bubble domain propagation structure in which the domain guide structure is formed by a spatially periodic pattern of permalloy implemented on two discrete levels separated by a substantially vertical gap. The structure forms a pattern of contiguous disk on one level and the complementary image of such disks on the second level.

Abstract: A coil arrangement for testing magnetically operative devices comprising means for mounting a magnetically operative device to be tested by an external magnetic field; first and second coil means disposed symmetrically with respect to the place of the device, the coil means functioning to produce an external magnetic field for testing the device; characterized in that the first coil means is embedded within a metallic electrically conductive body for confining the magnetic field lines to a predetermined region.

Abstract: A replicator for a magnetic bubble domain device including a hairpin loop conductor element traversing first and second spaced apart bubble domain guide structures. The replicator functions to replicate a bubble domain travelling along the first bubble propagation path onto the second bubble propagation path in response to an activating signal on the conductor. The replicate guide structure includes two attractive cusp positions and one repulsive cusp position, so that the repulsive charged wall formed at the repulsive cusp position functions to sever a stretched bubble domain formed by the activating signal.

Abstract: A process for forming a doped region in a substrate which is in alignment with a circuit member by forming a masking member on a layer, the masking member defining the outline on the circuit member; and etching the layer employing the masking member as a mask to define the circuit member, the etching continuing such that the circuit member includes sloping side faces. Subsequently, a dopant species is implanted into the substrate so as to form the doped region, the dosage and energy of ions implanted being selected such that ions are partially blocked by the portion of the circuit member beneath the sloping side faces thereby providing a more lightly doped and more shallow distribution of implanted species region than in other regions.

Abstract: A semiconductor integrated circuit using charged coupled device (CCD) technology for performing demodulation of time-varying signals which have been phase or amplitude modulated. The CCD circuit performs a sampling of the time-varying signal at a suitable sampling frequency depending upon the frequency of the phase or amplitude modulation of the carrier. The CCD device converts the sample into an equivalent charge packet which is used to control the control electrode of a field effect transistor in an amplifier circuit. The magnitude of the sample is representative of the amplitude of the carrier so that the output of the field effect transistor represents a demodulated signal. The circuit is a broad spectrum device, operable with a signal frequency from the audio into the gigaHertz (GHz) frequency range.

Abstract: A magnetic bubble domain device nucleation source for producing magnetic bubble domains is disclosed, in which bubble domains along with possibly unwanted duplicate bubble domains are produced in response to a current pulse. A first bubble domain guide structure is provided which coupled and disposed directly adjacent the nucleator and defines a first bubble domain propagation path for guiding the movement of generated bubble domains in response to a cyclical change in orientation of a reorientating field within the plane of the magnetic layer. This first guide structure functions to receive bubble domains representative of information. More particularly, a second bubble domain guide structure is provided also disposed directly adjacent the nucleator and the first bubble domain guide structure.

Abstract: A solid state device including glass containing SiO.sub.2, consisting essentially of the composition, in percent by weight, in the range of:______________________________________ SiO.sub.2 95-99.5 Al 0.5 to 5.0.

Abstract: A bi-level magnetic bubble domain propagation structure in which the domain guide structure is formed by a spatially periodic pattern of permalloy implemented on two discrete levels separated by a substantially vertical gap. The structure forms a complementary pattern of contiguous disks, and the complementary image of such disks.

Abstract: A method for processing a magnetic bubble domain device for hard bubble suppression comprising the steps of providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of the substrate; and directing a beam of ions consisting essentially of a nongaseous ion at the substrate.