Abstract: A resist mask is formed by coating on a substrate a layer of a polymer, such as polymethyl methacrylate, which is degradable by high energy radiation, such as a scanning electron beam. The layer is exposed to high energy radiation in a patternwise manner so as to lower the molecular weight of the polymer in the exposed portions. The layer is developed to remove the exposed portions by immersing the layer in a developer which consists of alkyl acetates and ketones having between 7 and 9 carbon atoms and mixtures thereof at a temperature of at least about 40.degree. C.
Type:
Grant
Filed:
April 22, 1974
Date of Patent:
October 19, 1976
Assignee:
International Business Machines Corporation
Abstract: A copper oxide containing seal glass is formed by a controlled low temperature process which reduces the formation of seeds in the glass. In one embodiment the glass is prepared in two portions with the first portion containing the high melting oxides and the second portion containing the low melting oxides. The copper oxide is added to the second portion and the two portions are combined to form the seal glass at temperatures below about 800.degree.C which reduces the formation of Cu.sub.2 O crystals in the glass.
Type:
Grant
Filed:
April 28, 1975
Date of Patent:
September 28, 1976
Assignee:
International Business Machines Corporation
Inventors:
Rudolf G. Frieser, Jimmie L. Powell, Rao R. Tummala
Abstract: The strength of high lead or alkaline earth oxide sealing glass articles is increased by treating the surface of the articles with a solution of dilute nitric acid containing about 1-10 weight percent of concentrated nitric acid in water for the time necessary to remove a thin layer of material from the surface of the article.The purpose of this abstract is to enable the public and the Patent Office to rapidly determine the subject matter of the technical disclosure of the application. This abstract is neither intended to define the invention of the application nor is it intended to be limiting as to the scope thereof.
Type:
Grant
Filed:
June 26, 1975
Date of Patent:
August 17, 1976
Assignee:
International Business Machines Corporation
Inventors:
Betty Jane Foster, Perry Robert Langston, Jr., Rao Ramamohana Tummala
Abstract: The invention relates to a method of etching solid, chemically resistant materials containing silicon (Si) by means of a hot melt made up of Society phosphorus pentoxide (P.sub.2 O.sub.5) and phosphoric acid (H.sub.3 PO.sub.4) (anhydrous).
Type:
Grant
Filed:
April 21, 1975
Date of Patent:
July 27, 1976
Assignee:
International Business Machines Corporation
Inventors:
Marian Briska, Wolfgang Hoffmeister, Herbert Kuhlmey
Abstract: A low temperature glass frit seal composition and process employs a paste including particulate lead glass, an organic vehicle, and small amounts of finely divided TiO.sub.2. The TiO.sub.2 prevents attack by residual organic vehicle on the lead glass during sealing and adjusts the coefficient of thermal expansion to be compatible with the substrate glass.
Type:
Grant
Filed:
February 10, 1975
Date of Patent:
June 29, 1976
Assignee:
International Business Machines Corporation
Inventors:
Betty Jane Foster, Rao Ramamohana Tummala
Abstract: A catalyst solution for making surfaces receptive to the deposition of adherent electroless metal layers includes a complex of a precious metal salt with dimethyl sulfoxide such as, for example, Pd Cl.sub.2 . 2(CH.sub.3).sub.2 SO together with a group IV metal salt such as, for example, stannous chloride. A process for rendering surfaces, such as glass, receptive to adherent electroless metal layers using the catalyst solution is also provided.
Type:
Grant
Filed:
January 6, 1975
Date of Patent:
June 15, 1976
Assignee:
International Business Machines Corporation
Abstract: A high sensitivity resist layer structure for high energy radiation exposure is formed by coating plural layers of radiation degradable polymers on a substrate which layers are successively slower dissolving in the resist developer. Upon exposure and solvent development, a resist edge profile is obtained which is particularly useful for metal lift-off.
Type:
Grant
Filed:
December 19, 1973
Date of Patent:
January 20, 1976
Assignee:
International Business Machines Corporation
Abstract: A resist mask, whose configuration is changed during processing, is formed by varying the exposure energy across a resist layer and then conducting successive development steps using developers having increasing solvent power to remove progressively more of the resist layer with each step.
Type:
Grant
Filed:
May 3, 1973
Date of Patent:
January 6, 1976
Assignee:
International Business Machines Corporation
Inventors:
Diana Jean Bendz, Gerald Andrei Bendz, Anne Marie Wildman