Abstract: Amorphous silicon dioxide particles for polishing semiconductor surfaces are prepared by boiling, at reflux, a mixture of surplus organic amine, a hydroxybenzene, water and silicon in the presence of oxygen to precipitate silicon dioxide.

Abstract: Semiconductor materials are cleaned after silica polishing by treatment with an aqueous phosphoric acid containing solution followed by rinsing in water. The treatment dissolves the silica sols so that they are removed from the semiconductor surface.

Abstract: The invention relates to a method of making a negative photoresist image on a substrate, where a normally positive working photoresist material containing 1-hydroxyethyl-2-alkyl-imidazoline is applied to a substrate, image-wise exposed with actinic radiation, heated, and blanket exposed to actinic radiation. The material which was not exposed originally is then removed with a solvent to give a negative image.

Abstract: In an electron beam lithography process, shapes are formed which differ from the beam spot size and the grid by employing multiple overlapping exposures having a reduced exposure level.

Abstract: A positive relief image is produced by coating a substrate with a layer of a copolymer containing about 90-98 mole percent of polymerized lower alkyl methacrylate units and about 2-10 mole percent of polymerized lower haloalkyl methacrylate units, heating the layer to cause cross-linking between polymer chains by removal of hydrogen halide, patternwise exposing the layer with high energy radiation such as a scanning electron beam, and removing the exposed portion of the layer with a solvent developer.The purpose of this abstract is to enable the public and the Patents and Trademark Office to rapidly determine the subject matter of the technical disclosure of the application. This abstract is neither intended to define the invention of the application nor is it intended to be limiting as to the scope thereof.

Abstract: The development of high energy radiation exposed positive acrylate polymer resist layers by organic liquid developers, such as methyl isobutyl ketone, is improved by adding water to the ketone.

Abstract: Organic polymer resist layers are stripped from substrates by treating the layers with a mixture of an aldehyde or a ketone and an alcoholic solution of a compound selected from the group consisting of ammonium, alkali metal, and alkaline earth metal hydroxides and carbonates.

Abstract: A water soluble flux composition includes a vehicle portion of polyoxyethylene-polyoxypropylene block copolymers and their adducts of trimethylolpropane along with an activator portion of tetrakis hydroxyalkyl derivatives of alkalene diamines such as N,N,N',N'-tetrakis (2-hydroxypropyl) ethylenediamine and/or a long chain alkyldiethanolamine, such as polyoxyethylene soyamine.

Abstract: In a projection printing system the pattern mask, whose image is projected onto a light sensitive layer, is encased in a glass sandwich so that any dirt particles on the surfaces of the sandwich are out of focus and are not printed in the light sensitive layer.

Abstract: Objects, such as a pattern mask and a photoresist coated substrate, are placed in translational and/or rotational alignment by a system in which a target on one object is successively aligned to two targets on the other object so that the accuracy of each alignment can be verified. The system compares a known stored distance between alignment targets with the distance determined from the successive alignments. When the distances agree within a preselected tolerance, then the objects are moved into alignment.

Abstract: The seed to tail oxygen concentration gradient in silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by a process employing stop-go crucible rotation to provide fluid shearing at the melt-crucible interface.

Abstract: Carboxylic acids are included in resists to increase their speed and adhesion.

Abstract: Metallized through-holes are provided in insulating substrates by placing the substrate onto an absorbant carrier and screening a metallization paste, which contains a metal component dispersed in an organic solvent, into the holes. The carrier absorbs the solvent and a portion of the paste adheres to the carrier. When the carrier is stripped from the substrate it carries with it the center portion of the paste to leave a thin layer of paste on the inner surface of the substrate.

Abstract: Baked novolak resin based positive photoresists are either developed after exposure or stripped, following the use of the pattern resist layer as an etch mask, in aqueous solutions of a combination of permanganate and phosphoric acid.

Abstract: The electrical properties of MIS semiconductor devices, which have been damaged by radiation, are restored by treating the devices in a properly oriented RF field at low pressure.

Abstract: The oxygen content of silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by changing the surface characteristics of the portion of the silica vessel which is in contact with the melt so as to provide an increased oxygen concentration in the melt during the crystal drawing process.

Abstract: Positive photoresist layers including a base soluble resin and a diazo ketone sensitizer are treated with hydrogen ion following initial exposure to achieve changes in the developed resist profile and/or development in a negative mode.

Abstract: Low temperature, vitreous-crystalline seal glass compositions and a process for their preparation are described. The composition consists essentially of the following constituents in percent by weight:______________________________________ Percent by Weight ______________________________________ PbO 63.5-64.6 B.sub.2 O.sub.3 13.0-13.9 Bi.sub.2 O.sub.3 1.2-1.5 ZnO 11.4-11.9 SiO.sub.2 2.4-2.8 Al.sub.2 O.sub.3 0.8-1.0 Cu.sub.2 O 4.3-5.

Abstract: Newly precipitated MnO(OH).sub.2 is either added to an NH.sub.4 F solution that has been made slightly basic or this compound is formed in the NH.sub.4 F solution by adding an Mn (II) and an Mn (VII) salt solution. MnO(OH).sub.2 absorbs As and noble metal ions. The purity obtained is 10.sup..sup.-8 per cent by weight (starting from .ltoreq.10.sup..sup.-5 per cent by weight) of NH.sub.4 F solution.

Abstract: Water soluble fluxing bath compositions have particular value in immersion soldering of metallic surfaces and electrical connections in that they are characterized by good thermal and chemical stability and easy removal of flux residues without corrosion or insulation resistance hazards. The compositions comprise from about 2 to 8 percent by weight of chelating agents or salts dissolved in a solvent, such as glycerol. In some instances from about 0.1 to 1.0 percent of an inorganic acid, such as hydrochloric acid may be added.