Abstract: Cyclopentadienyl manganese tricarbonyl compounds are made by reacting a mixture of 0.25-0.55 moles of manganese acetate and 0.45-0.55 moles of a bis-cyclopentadienyl manganese compound with about 0.5-2.1 moles of an alkyl aluminum compound (e.g. triethyl aluminum) in the presence of about 0.75-1.25 moles of an ether per mole of said alkyl aluminum compound and reacting the mixture with carbon monoxide at about 65.degree.-175.degree. C. and 300-1500 psig.

Abstract: A liquid, sulfur-bridged, hindered phenol antioxidant composition is prepared by reacting a mixture of hindered phenols with a sulfur chloride in the presence of a polar modifier. The composition is an effective antioxidant in lubricating oils without causing excessive copper corrosion.

Abstract: Compounds having the formula: ##STR1## wherein: a. each of R, R.sup.2 and R.sup.4 when taken singly is a hydrogen atom, an alkyl group containing from 1 to about 15 carbon atoms, an aryl group containing from 6 to about 15 carbon atoms or a cycloalkyl group containing from 4 to about 10 carbon atoms;b. each of R.sup.1 and R.sup.3 when taken singly is a hydrogen atom, an alkyl group containing from 1 to about 15 carbon atoms; an aryl group containing from 6 to about 15 carbon atoms; a cycloalkyl group containing from 4 to about 10 carbon atoms or an alkenyl group containing from 2 to about 10 carbon atoms or R.sup.1 and R.sup.3 taken together form the group --CHYCY.dbd.CY-- in which Y is a hydrogen atom or a methyl group or R.sup.1 together with R.sup.2 form an alkylidene group containing from 1 to about 6 carbon atoms;c. R.sup.5 is a hydrogen atom or an alkyl group containing from 1 to about 15 carbon atoms;d. R.sup.

Abstract: Compounds having the formula: ##STR1## wherein: a. R is an organic radical selected from an alkyl group, an alkenyl group, an aryl group or an aralkyl group in which the alkyl or alkenyl groups contain up to 32 carbon atoms and the aryl or aralkyl groups contain up to 15 carbon atoms;b. R.sup.1 is hydrogen or an organic radical selected from an alkyl group or alkenyl group, an aryl or aralkyl group in which the alkyl or alkenyl groups contain up to 32 carbon atoms and the aryl or aralkyl groups contain up to 15 carbon atoms;c. R.sup.2 and R.sup.3 are the same or different alkyl groups containing from 1 to 32, more preferably 4 to 8, carbon atoms eachare effective antiwear and antioxidant additives in lubricating oil.

Abstract: Compounds having the formula: ##STR1## wherein: a. each of R, R.sup.2 and R.sup.4 when taken singly is a hydrogen atom, an alkyl group containing from 1 to about 15 carbon atoms, an aryl group containing from 6 to about 15 carbon atoms or a cycloalkyl group containing from 4 to about 10 carbon atoms;b. each of R.sup.1 and R.sup.3 when taken singly is a hydrogen atom, an alkyl group containing from 1 to about 15 carbon atoms; an aryl group containing from 6 to about 15 carbon atoms; a cycloalkyl group containing from 4 to about 10 carbon atoms or an alkenyl group containing from 2 to about 10 carbon atoms or R.sup.1 and R.sup.3 taken together form the group --CHYCY.dbd.CY-- in which Y is a hydrogen atom or a methyl group of R.sup.1 together with R.sup.2 form an alkylidene group containing from 1 to about 6 carbon atoms;c. R.sup.5 is a hydrogen atom or an alkyl group containing from 1 to about 15 carbon atoms;d. R.sup.

Abstract: Oil-soluble reaction products of inorganic phosphorus containing acids or anhydrides with a boron compound and ashless dispersants such as alkenyl succinimides are useful as antiwear/EP additives in lubricants.

Abstract: A homogeneous concentrate suitable for use as an additive for lubricating oils is formed from a long chain succinimide and a benzotriazole by heating a mixture of these materials in the presence of water or alkoxylated amines or dihydrocarbylphosphites or dihydrocarbyl phosphonates (or mixtures of such materials) and then distilling the volatile component, from the resulting product. When this heating step is conducted in the additional presence of a boronating agent such as boric acid and the volatile component, is removed by distillation, not only is a compatible additive concentrate formed, but the long chain succinimide is boronated in the process.

Abstract: Compounds or mixtures of compounds having the formulae: ##STR1## wherein R is an alkyl group containing from 1 to 20 carbon atoms, n represents a number selected from the class consisting of zero and the integers from 1 through 6, R' represents a member selected from the group consisting of the hydrogen atom and those groups represented by R and R" is an aliphatic hydrocarbon group are effective antiwear and antioxidant additives in lubricating oils.

Abstract: Improved durability of shift-feel frictional characteristics in automotive transmission fluids is achieved by use of an initially substantially inert (friction-wise) compound--viz., an aliphatic tertiary amine having one long chain and two short chain groups--incorporated into a formulation which is otherwise balanced for initially good shift-feel frictional properties. When the fluid is subjected to the oxidative and thermal degradation conditions encountered under normal service conditions, the friction modifiers that give the fluid good initial shift-feel frictional properties degrade. However, as this occurs the aliphatic tertiary amine has itself been transformed by a mechanism that activates it so that in its new form it acquires the ability to provide good shift-feel properties. Thus this additive serves as a time-activated or delayed action substitute for the friction modifiers that have been degraded during service.

Abstract: Substituted .alpha.-[2'-tricyclo[3.3.1.1.sup.3,7 ]decylidene]-benzeneacetic acid derivatives of the formula: ##STR1## where the R.sup.1, R.sup.2 and R.sup.3 substituents are independently selected from hydrogen, lower alkyl, lower alkoxy, halogen and trifluoromethane, provided that at least one of such substituents is hydrogen have antihypoxia, anticonvulsant and/or antiparkinson activities.

Abstract: Metals such as platinum and palladium are preferentially removed in the presence of their metal silicides by ion milling in a noble gas atmosphere such as argon. The process can be used on semiconductor chips to remove excess platinum after platinum silicide has been formed in the contact holes.

Abstract: A very high current ion implanted emitter is formed in a diffused base. Windows are made through the silicon nitride and silicon dioxide layes to both the base contact and the emitter regions using a resist mask. These regions are then protected by resist and the collector contact window is opened through the remainder of the silicon dioxide layer to the reach through region. A screen oxide is then grown in all the exposed areas after the removal of the resist mask. A resist mask is applied which covers only the base and Schottky anode regions. Arsenic is then implanted through the exposed screened areas followed by an etch back step to remove the top damaged layer. With some remaining screen oxide serving as a cap, the emitter drive-in is done.

Abstract: A protective layer composition, suitable for protecting metal electrodes on components and other microelectronic circuitry, comprises an organic thermoplastic polymeric material, an organic solvent or solvents, and a non-ionic fluorocarbon surfactant as a wetting/leveling/flow control agent. A typical formulation comprises an aromatic polymer which cures to form a polyamide-imide polymer, an organic solvent or a mixture of orangic solvents and a non-ionic fluorocarbon surfactant.

Abstract: A resist mark comprising two layers of resist, one of which is saturated with a diluant which does not dissolve the other. In one embodiment, the two layers of resist are applied upon a substrate, the first layer of which is more soluble in a developer. The second layer is said saturated resist and the first layer is non-saturated. This composite is preferably used to form a relief mask with recessed sidewalls used in lift-off processes.

Abstract: A method for selectively depositing contacts in semiconductor regions. One set of contact openings is protected by a barrier layer during the metallization of another set of exposed contact openings to improve the cleanliness and reliability of the contacts. The barrier layer is then removed and a second layer of metallization is deposited in both sets of openings. In the preferred embodiment a standard diffusion mask is used to define all contact regions and a screen oxide is thermally grown in each of the contact openings. A blocking photoresist mask is then applied and patterned to expose the oxide in those openings in which a first set of contacts is to be formed. The screen oxide is removed and the first layer of metallization, typically platinum silicide, is then formed.

Abstract: Chromium is etched in a glow discharge without attack on Al/Cu, Si, SiO.sub.2, and Si.sub.3 N.sub.4 layers by etching in a low pressure ambient atmosphere containing a polychlorinated organic compound such as CCl.sub.4, water, and a material selected from the group consisting of the noble gases and oxygen.

Abstract: A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.

Abstract: The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750.degree.-900.degree. C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.

Abstract: A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.

Abstract: A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.