Patents Represented by Attorney Donald M. Winegar

Find this attorney in the Justia Lawyer Directory

  • Method for joining an anode target comprising tungsten to a graphite substrate
    Patent number: 4073426
    Abstract: Tungsten anode targets are joined to graphite substrates by a brazing method employing a controlled atmosphere and a suitable braze material such as platinum and an alloy of platinum and chromium.
    Type: Grant
    Filed: April 18, 1977
    Date of Patent: February 14, 1978
    Assignee: General Electric Company
    Inventor: Thomas M. Devine, Jr.
  • Method for removing a magnesia doped alumina core material
    Patent number: 4073662
    Abstract: Ceramic mold and core materials of magnesia doped alumina are removed from castings by a solution of either KOH or NaOH at elevated temperatures and pressures in an autoclave.
    Type: Grant
    Filed: March 9, 1977
    Date of Patent: February 14, 1978
    Assignee: General Electric Company
    Inventor: Marcus P. Borom
  • Process of making a deep diode solid state transformer
    Patent number: 4071378
    Abstract: An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columnar structures into two series electrical circuit arrangements to function respectively as the primary and secondary windings of a deep diode solid state transformer.
    Type: Grant
    Filed: November 4, 1976
    Date of Patent: January 31, 1978
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Semiconductor body holder
    Patent number: 4068814
    Abstract: A semiconductor body holder includes a rigid refractory base having a plurality of flexible refractory arms extending from one end thereof. Each arm includes a finger extending therefrom, the fingers in cooperation with the arms, serving to resiliently hold a body of semiconductor material during processing. The holder of the present invention is particularly useful in the practice of temperature gradient zone melting on the semiconductor body.
    Type: Grant
    Filed: October 18, 1976
    Date of Patent: January 17, 1978
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Method for forming spaced electrically isolated regions in a body of semiconductor material
    Patent number: 4063966
    Abstract: An array of vapor deposited metal wires is migrated by TGZM through a body of semiconductor material to divide the body into a plurality of individual regions electrically isolated from each other. The preferred crystal orientations of the surface on which migration is initiated, directions of wire alignment on that surface, wire sizes and preferred axes of migration are disclosed herein.
    Type: Grant
    Filed: April 14, 1976
    Date of Patent: December 20, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Making deep power diodes
    Patent number: 4063965
    Abstract: A process for forming aluminum doped silicon semiconductor material for large area semiconductor devices embodies thermal gradient zone melting processing and migration of a molten zone of a predetermined thickness to assure stability of the molten zone while migrating.
    Type: Grant
    Filed: May 11, 1976
    Date of Patent: December 20, 1977
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony
  • High dielectric constant ink for thick film capacitors
    Patent number: 4061584
    Abstract: An improved high dielectric constant ink useful in making thick film capacitors is disclosed in which a dielectric material is combined with a glass bonding agent having at least one electropositive element therein which is common with the powdered, high dielectric material which is one selected from the group consisting of chemically pure barium titanate and chemically pure barium titanate modified with from about 0.125% to about 5.0% by weight of a metal oxide additive. The glass bonding agent is an alkali-free binder comprising from 3 percent to 7 percent by total weight of the dielectric and binder materials.
    Type: Grant
    Filed: January 22, 1976
    Date of Patent: December 6, 1977
    Assignee: General Electric Company
    Inventors: Roland T. Girard, George A. Rice
  • High voltage deep diode power semiconductor switch
    Patent number: 4040869
    Abstract: A semiconductor switch is a lamellar body of semiconductor material having two major opposed surfaces and at least one group of four regions of alternate type conductivity. At least three of the four regions have recrystallized semiconductor material having a solid solubility of metal therein to impart the type conductivity thereto. Each of the first and third regions have the same type conductivity but different levels of impurity concentration. Each of the second and fourth regions have the same type conductivity but different levels of impurity concentration.
    Type: Grant
    Filed: April 19, 1976
    Date of Patent: August 9, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Semiconductor device manufacture
    Patent number: 4040868
    Abstract: An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies the alloying of the metal to the semiconductor material of the surface of the body in contact therewith. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.
    Type: Grant
    Filed: March 9, 1976
    Date of Patent: August 9, 1977
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Harvey E. Cline, Thomas R. Anthony
  • Deep diode zeners
    Patent number: 4040171
    Abstract: A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermal migration of metal "wires" through the body to form a region of conductivity opposite to that of the body. The material of the region is recrystallized semiconductor material of the body with solid solubility of the metal "wire" to impart the desired type conductivity and resistivity to the region.
    Type: Grant
    Filed: April 22, 1976
    Date of Patent: August 9, 1977
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony
  • Semiconductor element having a polymeric protective coating and glass coating overlay
    Patent number: 4040874
    Abstract: A multilayer passivation-encapsulation for a semiconductor element is provided by a suitable polymer layer disposed on the device and overcoated with a glass layer for hermeticity.
    Type: Grant
    Filed: January 10, 1977
    Date of Patent: August 9, 1977
    Assignee: General Electric Company
    Inventor: Alexander J. Yerman
  • Process for thermal gradient zone melting utilizing a guard ring radiation coating
    Patent number: 4035199
    Abstract: The practice of thermal gradient zone melting in processing a body of semiconductor material is enhanced by providing a radiation coating on selected surface areas of the body.
    Type: Grant
    Filed: August 30, 1976
    Date of Patent: July 12, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Temperature gradient zone melting utilizing selective radiation coatings
    Patent number: 4033786
    Abstract: Optical coatings are employed on selected surface areas of a semiconductor element to enhance processing of semiconductor materials by temperature gradient zone melting.
    Type: Grant
    Filed: August 30, 1976
    Date of Patent: July 5, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Semiconductor varistor embodying a lamellar structure
    Patent number: 4032965
    Abstract: A varistor has a lamellar structured body of semiconductor material. The lamellar structure is produced by migrating "wires" of a metal by a temperature gradient zone melting process through the solid material of the body to form a plurality of alternate regions of opposite type conductivity. A P-N junction is formed at the contiguous surfaces of the material of each pair of regions of opposite type conductivity. The material of the regions formed by the migrated wires is recrystallized semiconductor material of the body suitably doped with metal of the wire migrated therethrough to impart a predetermined type conductivity and a predetermined level of resistivity thereto.
    Type: Grant
    Filed: April 19, 1976
    Date of Patent: June 28, 1977
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony
  • Deep diode silicon controlled rectifier
    Patent number: 4032364
    Abstract: A semiconductor controlled rectifier has a lamellar body of semiconductor material of at least one group of four alternate first and second regions of opposite type conductivity. The second regions are made from recrystallized semiconductor material of the first regions and contain a sufficient level of concentration of a dopant impurity to impart thereto the opposite type conductivity. It is recrystallized material with solid solubility of the impurity therein. The controlled rectifier is turned on and off by either a control electrode or a source of illumination.
    Type: Grant
    Filed: May 3, 1976
    Date of Patent: June 28, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Deep diode transistor
    Patent number: 4032955
    Abstract: A deep diode transistor includes at least one of the emitter, the collector and the base regions comprising recrystallized material of the semiconductor substrate embodying the transistor. Each region of recrystallized material is formed in situ by the migration of a melt of a metal-rich semiconductor material through the material of the substrate at a predetermined elevated temperature along a thermal gradient established in the substrate.
    Type: Grant
    Filed: August 9, 1976
    Date of Patent: June 28, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Anisotropic resistor for electrical feed throughs
    Patent number: 4032960
    Abstract: An anistropic resistor for electrical feed throughs embodies a body of semiconductor material having at least one channel region of recrystallized material of the body formed therein. The channel region extends entirely through, and terminates in two major opposed surfaces of, the body. The at least one region is formed by a temperature gradient zone melting process, has a substantially uniform level of resistivity throughout the region and is electrically conductive.
    Type: Grant
    Filed: January 30, 1975
    Date of Patent: June 28, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Minority carrier isolation barriers for semiconductor devices
    Patent number: 4031607
    Abstract: A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.
    Type: Grant
    Filed: April 29, 1976
    Date of Patent: June 28, 1977
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony, Richard A. Kokosa, E. Duane Wolley
  • Gate modulated bipolar transistor
    Patent number: 4032961
    Abstract: Geometrical design criteria are disclosed for a Gate Modulated BiPolar Transistor, or GAMBIT, which is a three terminal variable negative resistance device. The GAMBIT is a planar, interdigited, integrated device whose electrical characteristics show a voltage controlled negative resistance between two of its terminals. The magnitude of the negative resistance is controlled by the variation of the applied bias to the third terminal.
    Type: Grant
    Filed: August 23, 1976
    Date of Patent: June 28, 1977
    Assignee: General Electric Company
    Inventors: B. Jayant Baliga, Douglas E. Houston, Surinder Krishna
  • Process for making ceramic molds having a metal oxide barrier for casting and directional solidification of superalloys
    Patent number: 4031945
    Abstract: At least one element of a superalloy cast into a refractory oxide-silica investment mold is oxidized to form a metal oxide barrier layer at the mold-metal interface to permit directional solidification of the cast superalloy at elevated temperatures without metal-mold reaction.
    Type: Grant
    Filed: April 7, 1976
    Date of Patent: June 28, 1977
    Assignee: General Electric Company
    Inventors: Michael F. X. Gigliotti, Jr., Charles D. Greskovich