Patents Represented by Attorney Donald M. Winegar

Find this attorney in the Justia Lawyer Directory

  • High aspect ratio P-N junctions by the thermal gradient zone melting technique
    Patent number: 4030116
    Abstract: A thermal gradient zone melting technique is employed to migrate an array of metal buttons through a body of semiconductor material to form high aspect ratio P-N junctions therein. Semiconductor devices embodying such P-N junctions are suitable for employment in X-ray and infrared detection and imaging. Each button preferably has the configuration of an equilateral triangle and the array preferably has a hexagonal configuration.
    Type: Grant
    Filed: May 16, 1975
    Date of Patent: June 14, 1977
    Assignee: General Electric Company
    Inventor: Samuel M. Blumenfeld
  • Method for making investment casting molds for casting of superalloys
    Patent number: 4026344
    Abstract: A metastable mullite phase is formed in the physical structure of investment casting molds by employing alumina flour of a particle size less than 100 microns.
    Type: Grant
    Filed: June 23, 1976
    Date of Patent: May 31, 1977
    Assignee: General Electric Company
    Inventor: Charles D. Greskovich
  • Deep diode solid state transformer
    Patent number: 4024565
    Abstract: An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columnar structures into two series electrical circuit arrangements to function respectively as the primary and secondary windings of a deep diode solid state transformer.
    Type: Grant
    Filed: February 27, 1975
    Date of Patent: May 17, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Process for making an investment mold for casting and solidification of superalloys therein
    Patent number: 4024300
    Abstract: A process for making shell investment molds for the casting and solidification of superalloys therein embodies preparing a primary slurry composition of a mixture of at least two different flour grain sizes of fused alumina and a silica binder. The flour grain sizes range from approximately 240 mesh to approximately 400 mesh, U.S. Standard or Tyler screen series.
    Type: Grant
    Filed: June 27, 1975
    Date of Patent: May 17, 1977
    Assignee: General Electric Company
    Inventor: Paul S. Svec
  • Deep diode atomic battery
    Patent number: 4024420
    Abstract: A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal.
    Type: Grant
    Filed: June 27, 1975
    Date of Patent: May 17, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Semiconductor element having a polymeric protective coating and glass coating overlay
    Patent number: 4017340
    Abstract: A multilayer passivation-encapsulation for a semiconductor element is provided by a suitable polymer layer disposed on the device and overcoated with a glass layer for hermeticity.
    Type: Grant
    Filed: August 4, 1975
    Date of Patent: April 12, 1977
    Assignee: General Electric Company
    Inventor: Alexander J. Yerman
  • Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation
    Patent number: 4012236
    Abstract: The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by simultaneous noncentro-symmetric and secondary rotation of the solid body.
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: March 15, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Process for making a deep diode atomic battery
    Patent number: 4010534
    Abstract: A process for making a deep diode atomic battery embodies thermal gradient zone melting techniques for fabricating the structure thereof. Thermal gradient zone melting may also be employed to provide the battery with a radioactive source for energizing the battery.
    Type: Grant
    Filed: June 27, 1975
    Date of Patent: March 8, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Deep power diode
    Patent number: 4011582
    Abstract: One region of a large area semiconductor power diode comprises recrystallized semiconductor material formed in situ, and joined to a second region, by temperature gradient zone melting.
    Type: Grant
    Filed: May 11, 1976
    Date of Patent: March 8, 1977
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony
  • Semiconductor device manufacture
    Patent number: 4006040
    Abstract: An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material embodies the sintering of the metal to the surface of the body. The sintering process enables one to migrate two or more intersecting "wires" simultaneously as well as three wires intersecting at a common point of origin.
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: February 1, 1977
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony, Mike F. Chang
  • Uniform migration of an annular shaped molten zone through a solid body
    Patent number: 3998661
    Abstract: Annular regions of a predetermined type conductivity are produced in a body of semiconductor material by a temperature gradient zone melting process embodying both noncentro-symmetric rotation of the body as well as secondary rotation of the body about its vertical axis.
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: December 21, 1976
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Thomas R. Anthony, Harvey E. Cline
  • Method for cleaning semiconductor devices
    Patent number: 3998653
    Abstract: A solution of potassium hydroxide is employed to remove the reaction products of aluminum migrated through silicon-semiconductor material by thermal gradient zone melting processing.
    Type: Grant
    Filed: March 9, 1976
    Date of Patent: December 21, 1976
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline, Mike F. Chang
  • Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
    Patent number: 3998662
    Abstract: Metal wires of widths as small as 10 microns are successfully migrated by thermal gradient zone melting processing as a molten zone through a body of semiconductor material. The metal wires are migrated to a preselected depth without use of oxide masking and/or etched grooves when the planar orientation of the surface of the body is (100).
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: December 21, 1976
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline, Douglas E. Houston
  • Isolation junctions for semiconductor devices
    Patent number: 3995309
    Abstract: Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the region. The material of the selected regions is recrystallized semiconductor material with solid solubility of the dopant impurity.
    Type: Grant
    Filed: November 1, 1974
    Date of Patent: November 30, 1976
    Assignee: General Electric Company
    Inventor: Manuel L. Torreno, Jr.
  • Deep buried layers for semiconductor devices
    Patent number: 3990093
    Abstract: A deep buried electrical layer is provided in a semiconductor device by thermal gradient zone melting.
    Type: Grant
    Filed: February 26, 1975
    Date of Patent: November 2, 1976
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony
  • Deep finger diodes
    Patent number: 3988770
    Abstract: Deep finger diodes in a body of semiconductor material are fabricated by a thermal gradient zone melting process. A liquid wire or droplet is migrated into the body through one surface to a depth less than the thickness of the body. The migration of the liquid wire or droplet is reversed to remove the wire or droplet from the body leaving a recrystallized material of the body having solid solubility of a material therein.
    Type: Grant
    Filed: March 17, 1975
    Date of Patent: October 26, 1976
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline
  • Minority carrier isolation barriers for semiconductor devices
    Patent number: 3988762
    Abstract: A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.
    Type: Grant
    Filed: May 28, 1974
    Date of Patent: October 26, 1976
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony, Richard A. Kokosa, E. Duane Wolley
  • Spatial control of lifetime in semiconductor device
    Patent number: 3988771
    Abstract: Deep level impurities such, for example, as gold, platinum, silver, nickel and copper, are introduced into selected regions of semiconductor devices by directional solidification to reduce the charge recombination lifetime and therefore the turn-off time of the device.
    Type: Grant
    Filed: May 28, 1974
    Date of Patent: October 26, 1976
    Assignee: General Electric Company
    Inventor: Surinder Krishna
  • Deep diode solid state inductor coil
    Patent number: 3988764
    Abstract: An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of a dopant metal therein. Means are provided for connecting the columnar structures into a series electrical arrangement with each other to form a solid state inductor for integral circuits.
    Type: Grant
    Filed: April 23, 1975
    Date of Patent: October 26, 1976
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony
  • Deep diode zeners
    Patent number: 3988757
    Abstract: A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermomigration of metal "wires" through the body to form a region of conductivity opposite to that of the body. The material of the region is recrystallized semiconductor material of the body with solid solubility of the metal of the "wire" to impart the desired type conductivity and resistivity to the region.
    Type: Grant
    Filed: April 17, 1975
    Date of Patent: October 26, 1976
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony