Abstract: The amount of ink in an ink fountain in a printer is detected on the basis of change of oscillation. The oscillation frequency is changed on the basis of dielectric constant information on the dielectric constant of the ink.

Abstract: Hydrogen-rich reformed gas is produced by reaction including partial oxidation of feed gas in a reforming reaction section (6). In this case, for the purpose of reducing temperature variations in the reforming reaction section (6), improving the thermal efficiency thereof and providing a reformer (A) with a simple and compact construction, the reformer (A) is formed in a double-wall structure consisting of a housing (1) and partitions (2), (2) inside of the housing (1), the reforming reaction section (6) is contained between the partitions (2), (2), and a feed gas passage (3) is provided by the space between the housing (1) and the partition (2). In this manner, the feed gas passage (3) is provided in the surrounding area of the reforming reaction section (6). The reforming reaction section (6) is thermally insulated by the feed gas passage (3) so that temperature variations in the reforming reaction section (6) can be reduced.

Abstract: A method for driving a semiconductor memory including a field effect transistor having a gate electrode formed on a ferroelectric film includes the steps of writing a data in the semiconductor memory by changing a polarized state of the ferroelectric film by applying a voltage to the gate electrode, and reading a data written in the semiconductor memory by detecting a current change appearing between a drain and a source of the field effect transistor by applying a voltage between the drain and the source of the field effect transistor with a voltage applied to the gate electrode. The magnitude of the voltage applied between the drain and the source of the field effect transistor in the step of reading a data is set within a range where a drain-source current of the field effect transistor increases as a drain-source voltage thereof increases.

Abstract: A roof construction for a vehicle that uncovers a roof space above a passenger compartment of a vehicle body and covers the roof space, partly or fully, comprises a roof assembly, e.g. front, intermediate and rear roof panels, that is movable relatively to the vehicle body in a longitudinal direction of the vehicle body so as to selectively shift between three positions, namely a closed position where the roof space is fully closed, a partly open position where the roof space is partly open and a fully open position where the roof space is fully open and a prop link mechanism operative to shift the roof assembly into a selected one of the three positions and to fixedly support the roof assembly in the selected position. During shifting the roof assembly into a selected position, the front and intermediate roof panels are superposed and held horizontally in position.

Abstract: A golf club putter and method of putting which complies with the rules of golf provides the player with an improved view of the ball and head of the putter when putting putts of a short distance. The method provides a putting stroke which aids the golfer in carrying out a putting stroke, maintains the putting face of the putter in a perpendicular orientation which respect to the line-of-putt thereby compensating for the golfer's tendency to deviate the putter face from the perpendicular orientation with respect to the line-of-putt.

Abstract: A pair of bushing including an outer member having an outer main body and an outer flange; an inner member having an inner main body inserted into the outer member, an inner flange, and a through hole; and an elastic member disposed between the outer member and the inner member. The bushings are press-fit into a top aperture and a bottom aperture of a bushing-attaching hole in a suspension cross-member, respectively. When each bushing is press-fit into the apertures there exists a predetermined clearance between the inner members. For fixing the suspension cross-member to vehicle body, a stud is inserted through the respective through holes and a nut is fitted onto a stud and screwed until the inner members abut each other.

Abstract: A car body structure for a convertible car that has a folding roof and a transparent windshield covering an front window opening comprises a door opening and closing a door opening in a side body section and a pillar member extending almost vertically from the side body section so as to support each side of the transparent windshield. The pillar member is positioned behind the front window opening so that the transparent windshield extends near besides occupants sitting on a seat of the car.

Abstract: A plurality of metal interconnects are formed on a lower interlayer insulating film provided on a semiconductor substrate. An upper interlayer insulating film is formed so as to cover the plural metal interconnects. The upper interlayer insulating film has an air gap between the plural metal interconnects, and a top portion of the air gap is positioned at a level higher than the plural metal interconnects.

Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.

Abstract: Linear interpolation processing is carried out on a discrete signal made up of signal components obtained by sampling an original signal in a plurality of sampling positions to obtain interpolation signal components for interpolating positions other than the sampling positions. On the linearly interpolated signal components obtained by carrying out the linear interpolation processing on the discrete signal, is carried out variable characteristic filtering processing for compensating for low-pass characteristics in the linear interpolation processing according to the position deviations between the sampling positions and the interpolating positions.

Abstract: A stencil is made by thermally forming perforations arranged in both a main scanning direction and a sub-scanning direction in a thermoplastic resin film of heat-sensitive stencil material by the use of a heat source which is heated through supply of energy. Supply of energy to the heat source is cut when a time interval not shorter than 50% and not longer than 100% of an estimated perforating time lapses from the time at which supply of energy to the heat source is started. The estimated perforating time is a time interval expected to be necessary for a perforation to be produced by the heat of the heat source and to be enlarged to a desired size as a final size as measured from the time at which supply of energy to the heat source is started.

Abstract: A stencil is made by thermally forming perforations arranged in both a main scanning direction and a sub-scanning direction in a thermoplastic resin film of heat-sensitive stencil material by the use of a heat source which is heated through supply of energy. Supply of energy to the heat source is cut when a time interval not shorter than 50% and not longer than 100% of an estimated perforating time lapses from the time at which supply of energy to the heat source is started. The estimated perforating time is a time interval expected to be necessary for a perforation to be produced by the heat of the heat source and to be enlarged to a desired size as a final size as measured from the time at which supply of energy to the heat source is started.

Abstract: A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.

Abstract: An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.

Abstract: A method of preparing a pizza is disclosed comprising the steps of forming a pizza shell, applying a predetermined quantity of pizza or tomato sauce to an upper surface of the pizza shell to form a pizza base, cooking the pizza base for a first predetermined time period at a first predetermined temperature and subsequently cooling the pizza base having a still moist sauce thereon to at or near room temperature. Once cooled, a predetermined quantity of pizza toppings are placed on the moist sauce including at least one of additional pizza sauce, cheese, meats, vegetables and spices is applied to the pizza base with the pizza now being fully prepared and either placed in a refrigerator for future use or further heated for a second predetermined time period at a second predetermined temperature and subsequently served to the consumer. By preparing the pizza in accordance with this method, the cheese and pizza sauce are prevented from blending with one another prior to consumption of the pizza by the consumer.

Abstract: The well screen two step coupled connector and method includes providing a well screen with a then walled tubular pin having a constant diameter channel and three pin sections of successively increasing diameter. The end of the pin has an annular surface and an angled recess is provided between the intermediate and innermost pin sections, while non-inclined external threads are formed on the end and intermediate pin sections. A tubular open ended coupling is provided having a passage divided into two coupling sections by an inwardly projecting divider. Each coupling section is configured to receive the end and intermediate pin sections and includes non-inclined threads to mate with the pin section threads. The coupling includes an angled wall adjacent the divider to provide a seal with the annular angled surface at the end of the pin and an angled projection which fits within and forms a seal with the angled recess in the pin.

Abstract: A semiconductor substrate, on which a silicon dioxide film with a resist film defined thereon has been formed, is placed inside a reaction chamber of a plasma processing system. Then, a fluorocarbon gas with a C/F ratio of 0.5 or more is introduced into the reaction chamber. In this process step, the flow rate of the gas is controlled such that the residence time &tgr; of the gas in the reaction chamber becomes greater than 0.1 sec and equal to or less than 1 sec in accordance with an equation &tgr;=P×V/Q, where &tgr; is the residence time (unit: sec), P is a pressure (unit: Pa) of the gas, V is a volume (unit: L) of the reaction chamber and Q is the flow rate (unit: Pa·L/sec) of the gas. Thereafter, plasma is created from the fluorocarbon gas and the silicon dioxide film is plasma-etched using the resist film as a mask.

Abstract: A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.