Abstract: A low-pressure energy system is provided that includes a combustion chamber immersed in water within an insulated container. Low-pressure air flow is introduced into one end of the combustion chamber. Fuel, sparks and water are also introduced to the combustion chamber, thereby generating steam and heat. The steam is blown through the combustion chamber to a first radiator, which emits heat and a steam exhaust, which can be used to increase the humidity of the enclosure housing the energy system. The heat generated by the combustion chamber heats the water in the insulated container. The heated water is pumped through a second radiator, thereby extracting additional heat from the system. A fan may be configured to introduce air flow over both the first and second radiators, thereby further improving heat transfer to the ambient air. Water can optionally be omitted from the combustion chamber.

Abstract: A configuration memory array for a programmable logic device includes an array of configuration memory cells arranged in rows and columns. Initially, each of the configuration memory cells is reset to a reset state. Each row of configuration memory cells is coupled to a corresponding data line and data line driver. During configuration, each data line driver drives a configuration data value having a first state or a second state onto the corresponding data line. A configuration data value having the first state has a polarity that tends to flip the reset state of a configuration memory cell. A repeater cell is connected to an intermediate location of each data line. Each repeater cell improves the drive of configuration data values having the first state.

Abstract: A one-transistor, floating-body (1T/FB) dynamic random access memory (DRAM) cell is provided that includes a field-effect transistor fabricated using a process compatible with a standard CMOS process. The field-effect transistor includes a source region and a drain region of a first conductivity type and a floating body region of a second conductivity type, opposite the first conductivity type, located between the source region and the drain region. A buried region of the first conductivity type is located under the source region, drain region and floating body region. The buried region helps to form a depletion region, which is located between the buried region and the source region, the drain region and the floating body region. The floating body region is thereby isolated by the depletion region. A bias voltage can be applied to the buried region, thereby controlling leakage currents in the 1T/FB DRAM cell.

Abstract: A method for determining contact resistance between an automated test equipment (ATE) system and a device under test (DUT). The DUT is configured to drive a known voltage to a pin. The ATE system is then controlled to force a first test current into the DUT at that pin. A board precision measurement unit (BPMU) of the ATE system then measures the voltage VM+ required to force the first test current. The ATE system is then controlled to force a second test current to flow out of the DUT at the same pin. The ATE system controls the second test current to have the same magnitude (but opposite direction) as the first test current. The BPMU then measures the voltage VM− required to force the second test current. The contact resistance is then determined in response to the measured voltages VM+ and VM−, and the magnitude of the test current.

Abstract: A sense transistor is placed in a current path between a reference voltage source and ground. The base terminal of the sense transistor is coupled to the base terminal of an amplifying transistor. Thus, current in the sense transistor corresponds to signal power output by the amplifying transistor. The sense current causes a sense voltage at the collector terminal of the sense transistor. This sense voltage is applied to one input of an error amplifier. The other error amplifier input receives a power control voltage. The error amplifier output is routed back to the base terminal of the amplifying transistor in a negative feedback loop, thereby keeping the power of the signal output by the amplifying transistor at a constant level. In some embodiments the error amplifier output is made independent of changes in the reference voltage. Multiple pairs of corresponding amplifying and sense transistors can be used.

Abstract: A memory system that includes a DRAM cell that includes an access transistor and a storage capacitor. The storage capacitor is fabricated by forming a polysilicon crown electrode, a dielectric layer overlying the polysilicon crown, and a polysilicon plate electrode overlying the dielectric layer. A first set of thermal cycles are performed during the formation of the storage capacitor to form and anneal the elements of the capacitor structure. Subsequently, shallow P+ and/or N+ regions are formed by ion implantation, and metal salicide is formed. As a result, the relatively high first set of thermal cycles required to form the capacitor structure does not adversely affect the shallow P+ and N+ regions or the metal salicide. A second set of thermal cycles, which are comparable to or less than the first set of thermal cycles, are performed during the formation of the shallow regions and the metal salicide.

Abstract: A memory system that includes a dynamic random access memory (DRAM) cell including an access transistor and a capacitor structure fabricated in a semiconductor substrate. The capacitor structure is fabricated by forming a cavity in a shallow trench isolation region, thereby exposing a sidewall region of the substrate below the upper surface of the substrate. A dielectric layer is formed over the upper surface and the sidewall region of the substrate. A polysilicon layer is formed over the dielectric layer and patterned to form a capacitor electrode of the capacitor structure that extends over the upper surface and the sidewall region of the substrate. The capacitor electrode is partially recessed below the upper surface of the substrate. The polysilicon layer is also patterned to form the gate electrode of the access transistor.

Abstract: A block interleaver is provided using a relatively small register file and a larger random access memory (RAM). In one embodiment, the size of the RAM is larger than the size of the register file by at least one order of magnitude. As a result, the register file consumes significantly less power than the RAM for similar operations. The register file receives a stream of sequential data values and stores the data values in a column order. The data values are then read from the register file in a row order. The data values read from the register file in a row order are then written to the RAM in a row order. The data values are then read from the RAM in a row order, thereby creating an interleaved data stream. In a particular embodiment, the data values are written to the RAM in a staggered row order and read from the RAM in a sequential row order. All accesses to the RAM are performed using the full width of the RAM, such that no unnecessary power is used to access the RAM.

Abstract: A transmit variable-width interface can be programmed to convert an electronic digital data path that is either 1N, 2N, 4N, or 8N bits wide into a data path that is 2N bits wide, either by serializing bits (4N- or 8N-bit cases), re-clocking bits (2N-bit case), or grouping bits (1N-bit case). A receive variable-width interface can be programmed to convert a data path 2N bits wide into a data path that is 1N, 2N, 4N, or 8N bits wide. The widths of the two variable-width data paths are controlled independently. The variable-width interfaces are coupled between a multi-gigabit transceiver and core logic of a programmable logic device. The incoming and outgoing data paths of the variable-width interfaces have separate clocks signals that are synchronized such that small amounts of skew in these clock signals do not disrupt the operation of the variable-width interfaces.

Abstract: A phase controller is coupled to a voltage-controlled oscillator (VCO) in a feedback configuration, thereby reducing the phase noise introduced by the VCO. As a result, circuits using the VCO, such as phase-locked loops or delay locked loops, will exhibit reduced jitter in the resulting output signals. In one embodiment, the phase controller measures successive actual periods of the VCO output clock, and in response, generates a control voltage representative of deviations in the successive actual periods of the VCO output clock. The phase controller transmits the control voltage to the VCO as a feedback control voltage. The VCO adjusts the actual period of the VCO output clock in response to the control voltage. More specifically, the VCO adjusts the actual period of the VCO output clock such that deviations in the successive actual periods of the VCO output clock are reduced.

Abstract: A memory system that reduces the number of memory cells programmed in a memory array is provided. A logic comparator determines whether more than half of the bits of a write data word require a program operation. If so, the logic comparator provides a status signal having a first state. A status signal having the first state causes the inverse of the write data word to be written to the memory array, along with the status signal. If the status signal does not have the first state, the write data word is written to the memory array, along with the status signal. During a read operation, a data word and corresponding status signal are read from the array. If the status signal has the first state, the inverse of the data word is provided as a read data word. Otherwise, the data word is provided as the read data word.

Abstract: A multi-bit programmable memory cell is provided that includes an access transistor and a plurality of N anti-fuse elements. The access transistor has a source coupled to a source line and a gate coupled to a word line. Each of the anti-fuse elements has a first terminal coupled to a drain of the access transistor, and a second terminal coupled to a corresponding bit line. At most, only one of the anti-fuse elements is programmed. The memory cell is capable of storing M bits, wherein N=2M−1. A method is provided for both programming and reading the memory cell. In another embodiment, the anti-fuse elements can be replaced with mask-programmable elements.

Abstract: A method for etching an oxide-nitride-oxide (ONO) layer fabricated on a semiconductor wafer, the ONO layer including a lower oxide layer, a nitride layer located over the lower oxide layer, and an upper oxide layer located over the nitride layer. The method includes the steps of removing the upper oxide layer and a portion of the nitride layer using an isotropic plasma enhanced etch, and then removing the remainder of the nitride layer and a portion of the lower oxide layer using an isotropic plasma enhanced etch, wherein the semiconductor wafer is not exposed through the lower oxide layer. The method can be used to form gate electrodes and diffusion bit liens in a fieldless array of non-volatile memory cells.

Abstract: A memory system that includes a dynamic random access memory (DRAM) cell including an access transistor and a capacitor structure fabricated in a semiconductor substrate. The capacitor structure is fabricated by forming a cavity in a shallow trench isolation region, thereby exposing a sidewall region of the substrate below the upper surface of the substrate. A dielectric layer is formed over the upper surface and the sidewall region of the substrate. A polysilicon layer is formed over the dielectric layer and patterned to form a capacitor electrode of the capacitor structure that extends over the upper surface and the sidewall region of the substrate. The capacitor electrode is partially recessed below the upper surface of the substrate. The polysilicon layer is also patterned to form the gate electrode of the access transistor.

Abstract: A non-volatile memory (NVM) system that includes an array of NVM cells arranged in rows and columns and an equalization control circuit is provided. One row of the array forms a row of equalization NVM cells. Each of the equalization NVM cells is erased, such that these cells exhibit a low threshold voltage during normal operation of the array. The equalization control circuit detects the beginning of each new read cycle, and in response, activates an equalization control signal. The activated equalization control signal is applied to the row of equalization NVM cells, thereby turning on these cells. The turned on equalization NVM cells connect the bit lines of the array, thereby allowing the bit lines to discharge (equalize) at the beginning of each read cycle. The equalization control signal is de-activated prior to the bit line sensing period of the read cycle.

Abstract: A programmable logic device (PLD) includes a die having first and second bond pads, each being weakly pulled to a first voltage. A package enclosing the die has an external pad configured to receive a second voltage. A conductor couples one and only one of the first and second bond pads to the external pad, such that one bond pad is pulled to the first voltage, and the other bond pad is pulled to the second voltage. A logic circuit on the die is coupled the first and second bond pads. The logic circuit enables the PLD to be configured in response to a first type of bit stream if the first bond pad is pulled to the second voltage, and enables the PLD to be configured only in response to a second type of bit stream if the second bond pad is pulled to the second voltage. In another embodiment, a bond pad is weakly pulled to a first voltage, and can be connected or not connected to an external pin for applying a second voltage.

Abstract: A non-volatile memory cell fabricated using a conventional logic process. As used herein, a conventional logic process is defined as a semiconductor process that implements single-well or twin-well technology and uses only one layer of polysilicon. The non-volatile memory cell uses a thin gate oxide (i.e., 1.5 nm to 6 nm) commonly available in a conventional logic process. This non-volatile memory cell can be programmed and erased using relatively low voltages. As a result, the voltages required to program and erase can be provided by transistors readily available in a conventional logic process. The program and erase voltages are precisely controlled to avoid the need for a triple-well process. In one embodiment, the non-volatile memory cells are configured to form a non-volatile memory block that is used in a system-on-a-chip. In this embodiment, the contents of the non-volatile memory cells are read out and stored (with or without data decompression operations) into on-chip or off-chip volatile memory.

Abstract: A memory system that includes a dynamic random access memory (DRAM) cell that includes an access transistor and a storage capacitor. The storage capacitor of the DRAM cell is fabricated by forming a polysilicon crown electrode, a dielectric layer overlying the polysilicon crown, and a polysilicon plate electrode overlying the dielectric layer. A first set of thermal cycles are performed during the formation of the storage capacitor to form and anneal the elements of the capacitor structure. After the first set of thermal cycles are complete, shallow P+ and/or N+ regions are formed by ion implantation, and metal salicide is formed. As a result, the relatively high first set of thermal cycles required to form the capacitor structure does not adversely affect the shallow P+ and N+ regions or the metal salicide. A second set of thermal cycles, which are comparable to or less than the first set of thermal cycles, are performed during the formation of the shallow regions and the metal salicide.

Abstract: A method and apparatus for handling the refresh of a DRAM array or other memory array requiring periodic refresh operations so that the refresh does not require explicit control signaling nor handshake communication between the memory array and an external accessing client. The method and apparatus handles external accesses and refresh operations such that the refresh operations do not interfere with the external accesses under any conditions. As a result, an SRAM compatible device can be built from DRAM or 1-Transistor cells. A clock division scheme is implemented to perform external accesses during one portion of a clock cycle, and required refresh operations during another portion of the same clock cycle.

Abstract: A method is provided for operating a memory system having a plurality of memory blocks. The method includes (1) periodically asserting a timing signal; (2) asserting a refresh pending signal in each of the memory blocks when the asserted timing signal is received; (3) within each of the memory blocks, performing a refresh operation if the refresh pending signal in the memory block is asserted and an idle cycle exists in the memory block; (4) within each of the memory blocks, asserting a refresh acknowledge signal if a refresh operation is performed in the memory block; (5) within each of the memory blocks, de-asserting the refresh pending signal in the memory block if the refresh acknowledge signal is asserted in the memory block; (6) asserting a refresh forcing signal if the refresh pending signal in any of the memory blocks is asserted when the timing signal is asserted; and (7) forcing an idle cycle in all of the memory blocks if the refresh forcing signal is asserted.