Abstract: An EL display device which can display vivid images with a good balance of the brightnesses of emitted red color, blue color, and green color light is provided. The EL display device has a plurality of pixels each containing EL elements respectively, and the EL display device performs gradation display by controlling the time during which the plurality of EL elements emit light. The EL display device is characterized in that a voltage applied to each of the EL elements differs depending upon the color displayed by the plurality of pixels each containing the EL elements respectively.

Abstract: A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon film, since the aluminum nitride film absorbs heat, a portion of the silicon film near the aluminum nitride film is solidified immediately. However, since a solidifying speed is slow in another portion of the silicon film, crystallization progresses from the portion near the aluminum nitride film. When a substrate temperature is 400° C. or higher at laser irradiation, since a solidifying speed is decreased, a crystallinity of the silicon film is increased. Also, when the substrate is thin, the crystallinity of the silicon film is increased.

Abstract: A small scale circuit can be realized. A timing circuit 30 detects a burst symbol signal period from outputs I and Q of a demodulating circuit 1A for orthogonally detecting a received signal obtained by time-multiplexing digital signals by BPSK, QPSK, and 8PSK modulation. A pattern regeneration circuit 40 outputs the same PN code pattern as on a transmission side. Inverting circuits 13 and 14 output I, Q as RI, RQ for a bit ‘0’ of a PN code pattern, and −I, −Q as RI, RQ for a bit ‘1’. A phase error table 15A contains a phase error between the phase of a received signal point as an output of the inverting circuits 13 and 14 and an absolute phase only for a first quadrant of RI, RQ. A phase error detecting processing circuit 16A reads the phase error data corresponding to the absolute value of RI, RQ, and adjusts the data into the data depending on the current quadrant of the RI, RQ.

Abstract: The present invention is directed to a main element of a surge protector device and its fabrication method which uses breakdown phenomenon of a single high resistive film. A breakdown voltage and a place where breakdown occurs can be precisely controlled. The surge protector device changes from its non-conductive state to conductive state very quickly when a surge is induced and returns quickly to the non-conductive state when a surge is removed if said element is surrounded by oxidizing agent. The main element of the surge protector device of the present invention has a single high resistive film on a single metal bar. The high resistive film has a part or parts where electric field concentrates when a surge induced. A breakdown voltage can be controlled precisely by controlling a size including a thickness of the high resistive film of the part. The part is called a fuse part. The main element includes also at least two parts on said metal bar which are continuous to said fuse part.

Abstract: An input interval of a keyboard of an input device is measured. The luminance of a display device is changed in accordance with the measured input interval of the keyboard.

Abstract: YAG laser can simultaneously emit a plurality of laser beams having different wavelengths from each other. By simultaneously irradiating the laser beams having different wavelengths from each other to a same region of a non-single crystal semiconductor film, an interference influence is suppressed to obtain a more uniform laser beam. For example, by simultaneously generating second and third harmonics of YAG laser to irradiate the same region through suitable optical system, a laser beam having higher uniformity and having an energy in which interference is highly suppressed is obtained.

Abstract: A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semiconductor thin film is crystallized by using a catalytic element, a heat treatment is carried out in an atmosphere containing a halogen element to remove the catalytic element. The thus obtained crystalline semiconductor thin film has substantially {110} orientation. The concentration of C, N, and S remaining in the final semiconductor thin film is less than 5×1018 atoms/cm3, and the concentration of O is less than 1.5×1019 atoms/cm3.

Abstract: A display device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein agate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor; a voltage supply line formed over said substrate; a pixel electrode formed over said substrate wherein the pixel electrode is connected to said voltage supply line through at least said second thin film transistor.

Abstract: A carrier reproducing circuit capable of reproducing a carrier quickly, wherein: a signal point arrangement converting circuit (14) detects the signal point arrangement of a demodulating baseband signal of a carrier when the carrier has a frequency different by a predetermined value from the center frequency of the modulated wave; a variance calculating circuit (15) calculates, based on the signal point arrangement, the number of times that the variance exceeds a preset threshold per unit time; a CN determination circuit (16) determines the reception CN ratio based on the number of times; a scanning step frequency width converting circuit (19) sets a frequency width changed by one step based on the determined reception CN ratio; the carrier for demodulating is sent out by changing oscillation frequencies of oscillators (6, 7) through an AFC circuit (20) based on the present frequency width; and when a carrier synchronization judging circuit (18) detects that the number of times decreases to a value equal to o

Abstract: A semiconductor device, which uses a crystalline silicon film having high crystallinity and a flat surface with few ridges and has high characteristics, and a method of manufacturing the semiconductor device are provided. According to the manufacturing method, a first amorphous silicon film is crystallized by using a heat treatment. A second amorphous silicon film is formed on a first crystalline silicon film thus obtained as an under film, and the second amorphous silicon film is crystallized by irradiation of laser light, so that a silicon film having excellent crystallinity and a surface with few ridges is obtained. The first crystalline silicon film and the second crystalline silicon film having different crystal structures are used as an active layer of a thin film transistor.

Abstract: An active matrix display device for suppressing voltage variation &Dgr;V due to off-operation of a gate pulse, including TFTs and picture-element electrodes, at least one of the TFTs being assigned to each picture element, and each of the TFTs having a gate electrode connected to a gate line (first gate line), and a source and a drain one of which is connected to a data line, wherein a picture-element electrode concerned is formed so as to be overlapped with the first gate line through an insulator, and also so as to be overlapped through an insulator with a gate line other than the first gate line or a wiring disposed in parallel to the first gate line.

Abstract: A liquid-crystal electro-optical device is offered which can operate at high speeds and easily oriented. The value of the surface tension of liquid crystal-orienting layers is 40 dynes/cm or more, and these layers are rubbed in antiparallel directions to each other. This reduces the pretilt angle of the molecules of a nematic liquid crystal sandwiched between two substrates. The anisotropy of the dielectric constant of the nematic liquid crystal is positive.

Abstract: In an annealing process of illuminating a semiconductor thin film with laser light, in the case where the laser illumination is performed at an energy level that is lower than an output energy range that allows a laser apparatus to operate most stably, the laser output is fixed somewhere in the above output energy range and the illumination energy is changed by inserting or removing a light attenuation filter into or from the laser illumination optical path. As a result, the time required for the laser processing can be shortened.

Abstract: There is provided an aluminum gate type thin film transistor integrated circuit having a matrix region and a region in which driving circuits thereof are formed wherein impurity regions are selectively formed on a semiconductor thin film in the form of islands and a gate insulation film is formed to cover the impurity regions. Further, a thermal annealing or an optical annealing is performed on the impurity regions and regions in which channels are to be formed adjacent thereto and the gate insulation film to improve the characteristics of those regions themselves and to eliminate discontinuity at the boundaries between those regions. After the above-described steps, gate electrodes are formed. An anodic oxide is provided at least at the portion of a gate electrode provided in the matrix region where it intersects with a line in the layer above it to prevent the gate electrode from shorting with the line.

Abstract: A received signal phase detecting circuit in provided in which the circuit scale is small. The circuit functions so as to capture a frame synchronizing signal from a demodulated baseband signal, extract a symbol stream during the period of frame synchronizing signal from the demodulated baseband signal through delay circuits (41, 42) at a timing matching the bit stream of the captured synchronizing signal, rotating the phase of a corresponding symbol extracted from the symbol stream when the big in the bit in the bit stream is logic “0” by 80°, outputting the symbol after the phase rotation and a corresponding symbol extracted from the symbol stream when the bit in the bit stream is logic “1” from a 0°/180° phase rotating circuit (43), operating the cumulative average of the output from the 0°/180° phase rotating circuit (43) for a specific period through cumulative averaging circuits (45, 46), rotating the phase of the outputs therefrom through a 22.

Abstract: There is provided a light emitting device including a TFT having a high driving capacity (on current) and high reliability in a driver circuit and a TFT in which an off current is reduced in a pixel portion. In manufacturing the TFTs, after the TFT having an LDD region is formed, a part of a gate electrode is etched to form the TFT having GOLD region. Thus, the TFTs having required functions can be easily formed in the driver circuit and the pixel portion, respectively, on the same substrate.

Abstract: An electro-optical device including an auxiliary capacitance using a pair of transparent conductive films is improved to provide a semiconductor device with high quality. A first transparent conductive film and a capacitance insulating film are formed into a laminate on a leveling film, and an opening portion is formed. An insulating film is formed thereon, and a second transparent conductive film is patterned to form a pixel electrode. At this time, the auxiliary capacitance made of a structure in which the capacitance insulating film is sandwiched between the first transparent conductive film and the pixel electrode is formed.

Abstract: An active matrix liquid crystal display device capable of good quality image display is provided by disposing a shielding film on the active matrix substrate side and a shielding film on the opposing substrate side as overlapped. The active matrix liquid crystal display device is characterized by comprising a first substrate comprising a source signal line driver circuit and a first shielding film and a second substrate comprising a second shielding film, in that the second shielding film is overlapped with a portion of, or all of the source signal line driver circuit and the first shielding film and that the second shielding film are partially overlapped.

Abstract: A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which is formed on the first semiconductor film and contains a rare gas element to a second heat treatment. That is, the rare gas element is incorporated into the second semiconductor film to generate a strain field as a gettering site.

Abstract: When reception of a multiplexed wave to be PSK-modulated of BPSK, QPSK, and 8PSK is started, a selector (16A) of a demodulating circuit (1A) reads high-order three bits &Dgr;&phgr;(3) of phase error data corresponding to I and Q symbol streams out of one phase error table (15-1) for BPSK among phase error tables provided for each modulation system and each phase rotation angle. A received-signal-phase rotation angle detecting circuit (8A) detects phase rotation angles of portions corresponding to bits (1) and (0) of a frame-synchronizing signal of a received symbol stream from the &Dgr;&phgr;(3) and the MSB of I symbol stream and outputs the phase rotation angles to a remapper (7) to make the remapper perform absolute phasing.