Abstract: An electronic equipment for vehicle use which can be properly protected from theft is provided. When an eject key is pressed down, a process controller operates a panel drive part to rotate an operation panel into the horizontal position (step S12). When the process controller determines that no CD is housed (step S13), it determines whether the removal of the operation panel has been detected (step S16). When the removal of the operation panel has been detected, the process controller rotates panel holder into the front-face position (step S17). When the process controller determines at step S13 that any CD has been housed, it ejects the housed CD and starts a timekeeping operation (step S18). When the process controller determines that a predetermined time has elapsed (step S21), it rotates the panel holder into the back-face position (step S22).

Abstract: An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode, is formed on a portion of the surface of said semiconductor layer, and a gate insulated film is disposed between said gate electrode and said semiconductor layer. A non-single-crystalline channel region is defined within said semiconductor layer just below said gate, electrode. A source region and a drain region are transformed from and defined within said semiconductor layer immediately adjacent to said channel region in an opposed relation, said source and drain regions being crystallized to a higher degree than that of said channel region by selectively irradiating portions of said semiconductor layer using said gate electrode as a mask.

Abstract: In a bottom gate type semiconductor device made of a semiconductor layer with crystal structure, source/drain regions are constructed by a lamination layer structure including a first conductive layer (n+ layer), a second conductive layer (n− layer) having resistance higher than the first conductive layer, and an intrinsic or substantially intrinsic semiconductor layer (i layer). At this time, the n− layer acts as LDD region, and the i layer acts as an offset region is a film thickness direction.

Abstract: There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.

Abstract: A small-scale absolute-phasing synchronization capturing circuit for absolute phasing of a received signal by selectively transmitting a baseband signal demodulated through a demodulator (1), a baseband signal subjected to phase rotation through a remapper (11), a baseband signal output from a first inverting means, a baseband signal output from a second inverting means based on the phase angle of the received signal relative to the phase rotation of the transmission signal. The most significant bit in the demodulated baseband signal and the most significant bit in the baseband signal subjected to phase rotation through the remapper (11) are extracted and a frame synchronization signal is captured according to the extracted significant bit.

Abstract: A liquid crystal projector in which light is effectively used and an excellent picture can be obtained is provided. In the liquid crystal projector, dichroic mirrors arranged at different angles are used to separate white light into beams of light of three primary colors of R, G, and B, and the respective beams of light are incident on microlenses at different angles. The respective beams of light of the three primary colors are distributed by the microlenses to optical components corresponding to pixels, and highly collimated light beams can be obtained by the optical components. Since the highly collimated light beams are made incident on the pixels of the liquid crystal panel, the beams can be certainly made incident on desired pixels.

Abstract: A hierarchical transmission digital demodulator capable of stable sync capture and stable demodulation through setting of a demodulation operation in accordance with a reception C/N value. A CNR measuring circuit receives a demodulation output from an arithmetic circuit and measures a reception C/N value. During a period until sync is captured, a carrier is reproduced in accordance with the demodulation output that a modulated wave in a header section and a modulated wave of burst symbol signal. After sync is captured, at an intermediate C/N value the carrier is reproduced in accordance with the demodulation output of the header section, burst symbol signal and QPSK signal and in accordance with output from a logical gate circuit, and at high and low C/N values the carrier is reproduced by setting high a carrier reproduction loop gain of a gain control circuit in accordance with a signal from the logical gate circuit.

Abstract: A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film in which the composition ratios of N, O and H are continuously changed by changing the flow rates of H2 and N2O, is used as the base film to prevent a change in the TFT characteristics. The base film can be formed by varying the flow rates of H2 and N2O in the same film-forming chamber to enhance the productivity.

Abstract: In a manufacturing method of an active matrix type liquid crystal display device, a semiconductor device having good TFT characteristics is realized. LDD regions of a driver circuit NTFT and LDD regions of a pixel section NTFT are given different impurity concentration. An impurity is doped at differing concentrations using a mask. Thus a liquid crystal display device provided with a driver circuit having high speed operation and a pixel section with high reliability can be obtained.

Abstract: An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to the CVDs.

Abstract: After a catalyst element is introduced into an amorphous silicon film, the amorphous silicon film is converted into a crystalline silicon film by a heat treatment and laser irradiation. After a resist mask is formed on the crystalline silicon film, boron and phosphorus are selectively introduced into the crystalline silicon film to form a gettering region therein. Then, a heat treatment is performed at 500°-650° C., whereby the catalyst element in a gettering subject region is gettered to the gettering region. As a result, a crystalline semiconductor film is obtained in which the catalyst element concentration is reduced. The crystalline semiconductor film is patterned into a semiconductor layer of a semiconductor device.

Abstract: There is disclosed a method of fabricating TFTs using a silicon film crystallized with the aid of nickel. The nickel is removed from the crystallized silicon film. The method starts with maintaining nickel in contact with the surface of an amorphous silicon film. Then, a heat treatment is performed to form a crystalline silicon film. At this time, nickel promotes the crystallization greatly, and nickel diffuses into the film. A mask is formed. A silicon film heavily doped with phosphorus is formed. Thereafter, a heat treatment is performed to move the nickel from the crystalline silicon film into the phosphorus-rich silicon film. This reduces the concentration of nickel in the crystalline silicon film.

Abstract: A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickwise direction of the I-type layer.

Abstract: An operation panel turnabout mechanism for vehicle mount audio equipment is provided which is simple and allows an operation panel to be prevented from being stolen without removing it. A panel supporting member 6 which rotatably supports an operation panel 1 is provided to freely project from a housing and urged in the direction of projection using elasticity of a spring 14. The operation panel 1 is manually made to face backward with the panel supporting member 6 projected from the housing, and the panel supporting member 6 is moved back against elasticity of the spring 14 to allow the operation panel 1 to be installed on the front surface of the housing when the operation panel 1 faces backward.

Abstract: In the fabrication of a surge protector device which utilizes breakdown phenomena of a resistive film, a case which fixes metal bars in it, makes electrical contacts with the metal bars and contains oxidizing and refractory agents, a cap, metal bars and oxidizing and refractory agents are prepared in advance. In the fabrication process of the surge protector device using these elements, a step to control the force applied to the cap, the metal bars and the case so that the force applied to the interface between the resistive films and the mechanical contacts which form electrodes to the metal bars can be controlled. Automation process to fabricate the surge protector device will be realized and efficient fabrication of the precise surge protector device will be also realized. A surge protector device whose breakdown voltage is precisely controlled will be realized reproducibly.

Abstract: An active matrix display device with a semiconductor layer, an organic layer above the semiconductor layer and a pixel electrode and a conductor layer thereon connected to the source/drain region(s).

Abstract: To provide a case body with a front panel that achieves a simplified structure and thus reduction in manufacturing cost, and allows a space in the case body to be effectively used. There is provided a case body with a front panel in which driving means is actuated to thereby cause an attitude of a panel 2 to be successively changed from a first state where the panel 2 is substantially parallel to a front surface of a case body 1, to a second state where the panel 2 substantially horizontally projects forward from the front surface of the case body 1, and to a third state where top and bottom as well as inside and outside of the panel 2 are reversed to the first state, wherein the driving means has a panel driving member 68 pivotably coupled to the panel via a drive shaft 68b, and as the drive shaft 68b moves, the shaft member 3 moves in the groove 4 to pivot the panel 2.

Abstract: To provide a TFT that can operate at a high speed by forming a crystalline semiconductor film while controlling the position and the size of a crystal grain in the film to use the crystalline semiconductor film for a channel forming region of the TFT. Instead of a metal or a highly heat conductive insulating film, only a conventional insulating film is used as a base film to introduce a temperature gradient. A level difference of the base insulating film is provided in a desired location to generate the temperature distribution in the semiconductor film in accordance with the arrangement of the level difference. The starting point and the direction of lateral growth are controlled utilizing the temperature distribution.

Abstract: A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

Abstract: In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps.