Abstract: The laser irradiation apparatus of the present invention is configured to include a laser and at least two mirrors each having a concave surface for unidirectionally homogenizing an energy density of laser light emitted from the laser. A focal position of a first mirror exists between the first mirror and an irradiation surface. A focal position of a second mirror does not exist between the second mirror and the irradiation surface, but exists behind the irradiation surface. The laser irradiation apparatus thus configured enables laser irradiation of, for example, semiconductor films.

Abstract: Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.

Abstract: A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.

Abstract: A semiconductor display device with low power consumption, low electromagnetic noise, and low unwanted radiation is provided. In a peripheral driving circuit, a clock signal with a voltage level increased by a level shifter circuit is input to a shift register circuit. Then a timing signal from the shift register circuit is input to a level shifter circuit, and the voltage level is thus raised in two stages.

Abstract: To fabricate a crystalline semiconductor film with controlled locations and sizes of the crystal grains, and to utilize the crystalline semiconductor film in the channel-forming region of a TFT in order to realize a high-speed operable TFT. A translucent insulating thermal conductive layer 2 is provided in close contact with the main surface of a substrate 1, and an insular or striped first insulating layer 3 is formed in selected regions on the thermal conductive layer. A second insulating layer 4 and semiconductor film 5 are laminated thereover. The semiconductor film 5 is first formed with an amorphous semiconductor film, and then crystallized by laser annealing. The first insulating layer 3 has the function of controlling the rate of heat flow to the thermal conductive layer 2, and the temperature distribution difference on the substrate 1 is utilized to form a single-crystal semiconductor film on the first insulating layer 3.

Abstract: A liquid crystal display device in the prior art has been high in its manufacturing cost for the reason that TFTs have been fabricated using, at least, five photo-masks. A liquid crystal display device which includes a pixel TFT portion having an n-channel TFT of inverse stagger type, and a retention capacitor, can be realized by three photolithographic steps in such a way that a pixel electrode 119, a source region 117 and a drain region 116 are formed by a third photo-mask.

Abstract: A semiconductor device with a substrate having an insulating surface, a first signal line extending over the substrate, a first thin film transistor having a channel region with crystalline silicon formed over the substrate and a gate of the first thin film transistor is connected to the first signal line, a second signal line extending across the first signal line, a second thin film transistor having a channel region comprising crystalline silicon formed over the substrate and a signal applied to a gate of the second thin film transistor from the second signal line through at least the first thin film transistor, a voltage supply line formed over the substrate, a pixel electrode formed over the substrate and the pixel electrode is supplied with a voltage from the voltage supply line through at least the second thin film transistor, and a driving circuit formed over the substrate for driving at least one of the first and second thin film transistors, the driving circuit having a third thin film transistor wh

Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.

Abstract: A semiconductor device which has satisfactory characteristics is provided. The semiconductor device includes a TFT manufactured by using a satisfactory crystalline semiconductor film and a circuit manufactured by using the TFT. An n-type impurity element (typically, phosphorous) is added to a gettering region of an n-channel TFT. A p-type impurity element (typically, boron) and a rare gas element (typically, argon) are added to a gettering region of a p-channel TFT. Then, there is performed heat treatment for gettering a catalytic element that remains in a semiconductor film.

Abstract: An electronic device having a long life and high quality pixel unit, said electronic device comprising a plurality of active elements, an insulator layer which covers the plurality of active elements, and a pixel region having placed thereon a plurality of pixel electrodes and being formed on the insulator layer, wherein, the insulator layer comprises a groove portion having an opening which is superposed on the interstice between the neighboring pixel electrodes, and said groove portion comprises an insulating light absorber buried therein.

Abstract: A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.

Abstract: A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

Abstract: A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhancement the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

Abstract: An improved vibrating actuator for notifying the user of a call upon signal arrival by any of a buzzer, a speech and a vibration, and a power supply mechanism thereof. The device has high impact resistance by a magnetic yoke having a flange, a damper material is provided between an oscillation plate and a cover to prevent generation of noise, and a hole is provided in the cover to change acoustic characteristics as required within the same frequency band. As a power supply mechanism for ensuring electrical connection, a projecting electrical connection terminal is provided on the actuator side, and a conductive material touching with the electrical connection terminal is provided as a power supply terminal electrically connected to a power supply section of a circuit board.

Abstract: To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

Abstract: A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750° C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.

Abstract: A laser process in which stripe formation due to laser annealing is prevented and uniform laser annealing is made over the whole surface of a substrate. A laser beam having an energy distribution with an edge which has a nearly vertical shape l used, and when scanning of the laser beam is carried out, the scanning is carried out while the edge having the nearly vertical shape is made the front of the scanning.

Abstract: In a serial-to-parallel conversion (SPC) circuit for digital data which converts the digital data serially inputted, into parallel digital data, and which outputs the parallel digital data; clock signals at frequencies which are, at the highest, ½ of the frequency of the input digital data are employed for operating the SPC circuit, whereby the SPC circuit is improved in power dissipation, stability and reliability.

Abstract: In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.

Abstract: A liquid crystal display device is realized which is improved in light reflectivity on pixel electrodes to provide brightness at low cost and low power consumption. A dielectric multi-layered film having a first dielectric film (low refractive film) 105 and a second dielectric film (high refractive film) 106 is formed on a pixel electrode 104 connected to a TFT 102 formed on a substrate 101 having an insulation surface. This dielectric multi-layered film is determined in refractive index (n), center wavelength (&lgr;) and film thickens (d) according to an equation nd=&lgr;/4, to give an enhanced reflection effect.