Abstract: Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.

Abstract: One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.

Abstract: A cell based integrated circuit chip includes a top voltage supply rail and a bottom voltage supply rail and a plurality of metal layers defining at least one filler cell. The filler cell is formed by a first field effect transistor of a first type conductivity, typically an n-channel MOSFET. The source or drain electrodes of the n-channel MOSFET are arranged to as act as a capacitor with respect to the bottom voltage supply rail and to which at least one of the source and drain electrodes is connected. A second field effect transistor of an opposite-type conductivity to the first field effect transistor, typically a p-channel MOSFET, is also provided. The source or drain electrodes of the p-channel MOSFET are connected in series between the top voltage supply rail and a gate electrode of the n-channel MOSFET. The gate electrode of the p-channel MOSFET is connected to a source of ground potential via a resistor.

Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

Abstract: Embodiments related to FEXT estimation and signaling in vectored systems are described and depicted herein.

Abstract: A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

Abstract: Techniques for self-calibration of transceivers are described herein.

Abstract: A circuit arrangement includes a signal processing unit and a regulation unit. The signal processing unit processes an input signal to form an analog output signal. The regulation unit is coupled to the signal processing unit in order to produce a digital regulation signal as a function of the analog output signal for regulation of the analog output signal.

Abstract: Methods for recycling unused error correction code (ECC) during flash memory programming, comprise generating ECC from user data to form a syndrome and storing the syndrome into volatile memory. ECC is re-encoded corresponding to the syndrome read from the memory with new user data. Re-encoding ECC comprises comparing new ECC with the most recent ECC of the previous syndrome, correcting a bit error in the new ECC, and indicating if the new ECC has failed.

Abstract: The device is for feeding electricity into a power grid (8) with a DC generator (1), a DC converter (2) and an inverter (3), and particularly to a DC converter (2) suited for the device. The DC converter (2) comprises a choking coil (15) having two windings (w1, w2) that are magnetically coupled and conductively connected to each other, two switches (S5, S6) and three diodes (D6, D7, D8), and is configured such that grounding of the direct current generator (1) at the negative output (5) thereof is possible and the power load of the switches (S5, S6) is kept small.

Abstract: One embodiment relates to a radio frequency (RF) communication device. The RF communication device includes an antenna interface coupled to an antenna that exhibits a time-varying impedance. The RF communication device also includes a test interface coupled to RF test equipment that exhibits a test impedance. A tuning circuit in the RF communications device selectively provides a matched impedance to either the time-varying impedance or the test impedance based on feedback derived from the test interface. Other methods and systems are also disclosed.

Abstract: A tire localization system for locating the position of a tire of a vehicle having five or more wheels, includes a number of tire pressure monitoring system (TPMS) wheel modules of a vehicle TPMS, each wheel module being attached to each one of the wheels or a tire thereof, respectively. Each TPMS wheel module includes a radio, frequency identification (RFID) reader. The system further includes a number of RFID tags, each RFID tag being associated with and storing wheel position information of one of the wheels, and each RFID tag being positioned externally of its associated wheel. Each of the RFID readers is arranged, upon activation, to interrogate its associated RFID tag, and the associated RFID tag is arranged, upon interrogation, to transmit its stored position information to the RFID reader for transmission by the TPMS wheel module to a central control unit. A tire localization method is also provided.

Abstract: A system and method is presented for providing failsafe control in a control system used for receiving and controlling various object or medium properties in a heating, ventilating or air conditioning system. The control system comprises an HVAC controller, configured to receive failsafe data indicative of a safety related property of an object or medium, and to generate a state indicative of a connection status of a failsafe detector with respect to the HVAC controller. The control system further comprises a non-volatile memory, operably coupled to the HVAC controller and configured to store a connection indication indicative of a connection status of the failsafe detector with respect to the HVAC controller, wherein the HVAC controller is configured to generate a control signal based on satisfaction of a predetermined relationship between the generated state and the stored connection indication.

Abstract: A magnetic field sensor device includes at least two magneto-resistive sensor elements and one switch which is connected to the at least two magneto-resistive sensor elements, and makes at least one magneto-resistive sensor element of the at least two magneto-resistive sensor elements electrically connectable into a magnetic field detection arrangement.

Abstract: In a method for identification of a multiple antenna transmission mode in a radio receiver, at least two antenna-decoupled data streams (s0, s1) are produced by means of an antenna decoupling unit in the receiver. Respective first variables (p0, p1) are calculated for both data streams, and are dependent on the phase change between the data in the respective data stream. An evaluation unit uses these first variables as the basis to decide whether a multiple antenna transmission mode is being used in the transmitter.

Abstract: One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.

Abstract: A modem unit includes a first semiconductor die that includes a power management unit and an embedded flash memory. A mobile communication unit includes a modem unit residing on a first semiconductor die. The first semiconductor die also includes a power management unit and an embedded flash memory.

Abstract: A semiconductor memory device comprises a plurality of memory cells, each memory cell having a respective transistor. The transistor comprises a transistor body of a first conductivity type, a drain area and a source area each having a second conductivity type, wherein said drain area and source area are embedded in the transistor body on a first surface of said transistor body, a gate structure having a gate dielectric layer and a gate electrode. Said gate structure is arranged between said drain area and said source area. An emitter area of said first conductivity type is provided wherein said emitter area is arranged on top of said drain area.

Abstract: One embodiment of the present invention relates to a variable capacitor that operates without moving mechanical parts. In this capacitor electrically conductive electrodes are separated by an enclosed chamber filled with an electrically conductive material. The electrically conductive material can freely vary its position within the chamber. The capacitance of the device will vary as position of the conductive material changes due to external mechanical motion (ex: rotation, vibration, etc.) of the device. Other embodiments of this device are also disclosed.

Abstract: An embodiment provides a device for generating an output signal as a function of an input signal, wherein a plurality of circuit sections generate partial signals and the output signal is composed from the partial signals.