Abstract: An electromechanical system and a printer for maintaining a peel location of media impressed on a receiving substrate. A mounted optical probe has at least one light source and one or more photodetectors for detecting reflected portions of the light emitted or transmitted from the light source. The photodetector indicates to the system controller a distance of the media for controlling a peel location via an electrical signal. A comparator compares the electrical signal with a predetermined electrical signal reference to determine if the media is desirably positioned. The predetermined electrical reference signal corresponds to the desired peel location. The comparator compares the signal levels and outputs a correction signal used in a negative feedback loop for adjusting a velocity of a motor that drives a take-up roller for the media.

Abstract: A method for maintaining a peel location and for peeling a layer of media from a surface in a thermal printer. An optical probe, that includes a light source and a photodetector, transmits light from the optical probe toward a first web. The web reflects a portion of the transmitted light onto the photodetector, which then outputs an electrical signal which is compared with a preselected signal level and the difference between them provides an indication as to how much adjustment the peel location requires. Adjusting the peel location may comprise changing environmental characteristics of the first web or the second web (surface) or adjusting a tension of the first or second web. The difference between the measured electrical signal levels is related to a physical distance of the first web from the desired peel location.

Abstract: An image file for storing a still digital image and metadata related to the still digital image, the image file including digital image data representing the still digital image, and metadata that categorizes the still digital image as an important digital image, wherein the categorization uses a range of levels and the range of levels includes at least three different integer values.

Abstract: A method and system for efficiently coding test pattern for ICs in scan design and build-in linear feedback shift register (LFSR) for pseudo-random pattern generation. In an initialization procedure, a novel LFSR logic model is generated and integrated into the system for test data generation and test vector compression. In a test data generation procedure, test vectors are specified and compressed using the LFSR logic model. Every single one of the test vectors is compressed independently from the others. The result, however, may be presented all at once and subsequently provided to the user or another system for further processing or implementing in an integrated circuit to be tested. According to the present invention a test vector containing 0/1-values for, e.g., up to 500.000 shift registers and having, e.g., about 50 so called care-bits can be compressed to a compact pattern code of the number of care-bits, i.e., 50 bits for the example of 50 care-bits.

Abstract: A method for configuring a communication port of a communications interface of an information handling system into a plurality of virtual ports. A first command is issued to obtain information indicating a number of images of virtual ports supportable by the communications interface. A second command is then issued requesting the communications interface to virtualize the communication port. In response to the second command, one or more virtual switches are then configured to connect to the communication port, each virtual switch including a plurality of virtual ports, such that the one or more virtual switches are configured in a manner sufficient to support the number of images of virtual ports indicated by the obtained information. Thereafter, upon request via issuance of a third command, a logical link is established between one of the virtual ports of one of the virtual switches and a communicating element of the information handling system.

Abstract: A structure and method is provided for optimizing memory resources, by establishing a history file for recording data processing criterion. The history file is then recorded in a first memory. Information either stored in the first memory or scheduled to be stored in the first memory can then be selectively reallocated and stored in an alternate memory. All or portions of the reallocated information can then be restored back to the first memory subsequently, with reference to the history file.

Abstract: A method, apparatus and program product for the non-disruptive recovery of a single partition in a multipartitioned data processing system. A server contains multiple partitions connected to a single channel adapter which is used to send data and commands to a fabric. A request is sent by the adapter to the well-known address for the fabric. The request includes an identification of the port associated with the partition to be removed. Upon receipt of the request, the fabric removes all resources associated with the port being logged out without affecting ongoing operations in other partitions.

Abstract: A method and a device for decoding an address word into word-line signals. A plurality of address lines feed the address word into a plurality of decoding blocks each associated to a particular address in the address space formed by the address word for generating a respective word-line signals, whereby each of the decoding blocks is connected to the plurality of address lines. At least one decoding block associated to a predetermined address in the address space formed by the address word is omitted, so that none of the generated word lines is switched to the active state, whenever the predetermined address word is inputted over the plurality of address lines.

Abstract: A method and a device for decoding an address word into word-line signals. A plurality of address lines feed the address word into a plurality of decoding blocks each associated to a particular address in the address space formed by the address word for generating a respective word-line signals, whereby each of the decoding blocks is connected to the plurality of address lines. At least one decoding block associated to a predetermined address in the address space formed by the address word is omitted, so that none of the generated word lines is switched to the active state, whenever the predetermined address word is inputted over the plurality of address lines.

Abstract: A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate gate sidewall spacer material disposed above a device channel region wherein the spacers are formed adjacent both the gate and the substrate and impose forces on adjacent substrate areas. Another embodiment comprises compressive stresses imposed in the plane of the channel using SOI sidewall spacers made of polysilicon that is expanded by oxidation. The substrate areas under compression or tension exhibit charge mobility characteristics different from those of a non-stressed substrate. By controllably varying these stresses within NFET and PFET devices formed on a substrate, improvements in IC performance have been demonstrated.

Abstract: A method and apparatus are provided for managing cache allocation for a plurality of data types in a unified cache having dynamically allocable lines for first type data and for second type data. Cache allocation is managed by counting misses to first type data and misses to second type data in the unified cache, and by determining when a difference between a number of first type data misses and a number of second type data misses crosses a preselected threshold. A replacement algorithm of the unified cache then is adjusted in response to the detected crossing of the preselected threshold, the adjusting step including increasing a replacement priority of the first type data lines in the cache. The replacement algorithm preferably is an LRU algorithm wherein the adjusting step includes incrementing an age indication of the first type data lines.

Abstract: There is disclosed herein a unique fabrication sequence and the structure of a vertical silicon on insulator (SOI) bipolar transistor integrated into a typical DRAM trench process sequence. A DRAM array utilizing an NFET allows for an integrated bipolar NPN sequence. Similarly, a vertical bipolar PNP device is implemented by changing the array transistor to a PFET. Particularly, a BICMOS device is fabricated in SOI. The bipolar emitter contacts and CMOS diffusion contacts are formed simultaneously of polysilicon plugs. The CMOS diffusion contact is the plug contact from bitline to storage node of a memory cell.

Abstract: A double gated silicon-on-insulator (SOI) MOSFET is fabricated by using a mandrel shallow trench isolation formation process, followed by a damascene gate. The double gated MOSFET features narrow diffusion lines defined sublithographically or lithographically and shrunk, damascene process defined by an STI-like mandrel process. The double gated SOI MOSFET increases current drive per layout width and provides low out conductance.

Abstract: A semi-conductor device includes a silicon substrate. A gate oxide dielectric layer is on the silicon substrate. A gate conductor includes a relatively thin layer of germanium on the dielectric layer. A relatively thick layer of gate conductor material is provided on the layer of germanium. Incorporating germanium at the gate conductor interface with the gate oxide stabilizes the gate oxide by providing a means of drawing charge trapping sites away from the oxide.

Abstract: An ESD protection network is described which prevents high voltage oxide stress. The network consists of a filter network (such as a blocking capacitor) and diode protection elements. The filter network can be designed for several types of ESD protection functions. It can be designed to provide voltage reduction for ESD pulses, and to selectively block the frequency components of ESD pulses.

Abstract: An oscillator circuit on a chip with a single I/O node whose output generally corresponds to a performance level of the IC chip. The single I/O node provides an easy access and testing point for evaluating chip performance. The I/O node is used for coupling to the oscillator circuit, and for activating and monitoring its oscillating output signal. The single I/O node may be accessed at the wafer level, after packaging, or in the field.

Abstract: A semiconductor integrated circuit memory cell, including at least three transistors and a capacitor to form a DRAM. The memory cell is fabricated on a semiconductor substrate including impurity regions, and using two semiconductor films, with dielectric films between the semiconductor films. The capacitor contains two electrodes. A substrate impurity region forms one of the electrodes; the other electrode is a semiconductor film which connects the gate of one device to an impurity region of another. The method for manufacturing the above-described integrated circuit, which may be used for the manufacture of similar circuits, is also disclosed.

Abstract: A processing system executing multiple programs and operating under control of an operating system, comprising a processor unit which includes a dispatch/decode unit under control of the operating system for dispatching and decoding instructions of the multiple programs, the instructions each including a program ID. The processor unit further comprises a plurality of execution units, each separately selectable by the operating system for receiving any of the instructions of the multiple programs from the dispatch/decode unit, wherein one of the execution units is executing an instruction from one of the multiple programs while another of the execution units is executing an instruction from another one of the multiple programs. The processor unit also comprises a retirement unit storing results of executed ones of the instructions uniquely in response to each program ID.

Abstract: Provided is a semiconductor structure that comprises a substrate; a conductor; and insulating layer separating the conductor from the substrate; and a removable conductive strap coupled to the conductor and the substrate for maintaining a common voltage between the conductor and substrate during ion beam and/or plasma processing; and a method for fabricating.

Abstract: Silicon is formed at selected locations on a substrate during fabrication of selected electronic components. A dielectric separation region is formed within the top silicon layer, and filled with a thermally conductive material. A liner material may be optionally deposited prior to depositing the thermally conductive material. In a second embodiment, a horizontal layer of thermally conductive material is also deposited in an oxide layer or bulk silicon layer below the top layer of silicon.